The present disclosure provides an organic compound represented by general formula [1] below. ##STR00001## In formula [1], Ar.sub.1 and Ar.sub.2 each represent an alkyl group having 1 to 8 carbon atoms, an aromatic hydrocarbon group having 6 to 18 carbon atoms, or a heteroaromatic group having 3 to 17 carbon atoms. Ar.sub.1 and Ar.sub.2 may be the same or different. Ar.sub.3 and Ar.sub.4 are each a substituent having a carbazolyl group. Ar.sub.3 and Ar.sub.4 may be the same or different. Ar.sub.1 to Ar.sub.4 may be substituted. At least one of Ar.sub.1 to Ar.sub.4 has a tert-butyl group. The total number of tert-butyl groups in one molecule of the organic compound is 2 or more.

Hybrid organic-inorganic perovskite thin films with average grain sizes of at least 50 micrometers were prepared and employed in solar cells. The PCE values of the solar cells did not degrade with the direction or the scan-rate of the applied voltage. The larger average grain sizes are believed to assist in reducing the influence of defect states on carrier recombination. The tunability of PCE with substrate temperature may be correlated to the quality of the crystalline perovskite formed using the hot-casting procedure. The larger average grain sizes lead to good crystalline quality, low defect density, and high carrier mobility. The process for growing hybrid organic-inorganic perovskites may be applicable to the preparation of other materials to overcome problems related to polydispersity, defect formation, and grain boundary recombination.

An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

The present invention relates to formulations comprising at least one organic semiconductor and at least one organic solvent, characterized in that the formulation contains less than 10,000 particles per liter formulation having an average size in the range from 0.1 to 20 μm, to their use for the preparation of electronic devices, to methods for preparing electronic devices using the formulations of the present invention, and to electronic devices prepared from such methods and formulations.

The present invention relates to a polymer, an organic solar cell comprising the polymer, and a perovskite solar cell comprising the polymer. The polymer according to the present invention has excellent absorption ability for visible light and an energy level suitable for the use as an electron donor compound in a photo-active layer of the organic solar cell, thereby increasing the light conversion efficiency of the organic solar cell. In addition, the polymer according to the present invention has high hole mobility, and is used as a compound for a hole transport layer, and thus can improve efficiency and service life of the perovskite solar cell without an additive.

A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. ##STR00001## In Chemical Formula 1, X.sup.1, X.sup.2, Y.sup.1, Y.sup.2, Ar, Ar.sup.1, and Ar.sup.2 are the same as defined in the detailed description.

The present invention relates to a polymer, an organic solar cell comprising the polymer, and a perovskite solar cell comprising the polymer. The polymer according to the present invention has excellent absorption ability for visible light and an energy level suitable for the use as an electron donor compound in a photo-active layer of the organic solar cell, thereby increasing the light conversion efficiency of the organic solar cell. In addition, the polymer according to the present invention has high hole mobility, and is used as a compound for a hole transport layer, and thus can improve efficiency and service life of the perovskite solar cell without an additive.

The invention relates to a photovoltaic module comprising a glass substrate or a substrate made of polymer material and at least two photovoltaic cells, a first photovoltaic cell and a second photovoltaic cell, on said substrate.

A photoelectric conversion element includes a base, a first electrode on or above the base, an electron-transporting layer on or above the first electrode, a photoelectric conversion layer on or above the electron-transporting layer, a hole-transporting layer on or above the photoelectric conversion layer, and a second electrode on or above the hole-transporting layer. The photoelectric conversion element has a penetration portion penetrating the electron-transporting layer and the photoelectric conversion layer. The photoelectric conversion element includes, in the penetration portion, a material of the hole-transporting layer and a material of the second electrode.

An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.