Disclosed are inorganic nanoparticle quantum dots that effectively kill Gram-positive and Gram-negative bacteria resistant to antibiotics and the treatment of infectious bacterial diseases using the same, and more particularly inorganic nanoparticle quantum dots introduced with a hydrophilic ligand having activity of killing multidrug-resistant bacteria (MDR) and the use thereof. The quantum dots are capable of effectively killing bacteria when used at a low concentration by optimizing the core bandgap thereof and also do not exhibit cytotoxicity, and are thus useful as an agent for preventing or treating infectious diseases caused by multidrug-resistant bacteria.

Disclosed are a surface-modified quantum dot surface-modified with a ligand complex having a specific structure on the surface of the semiconductor nanocrystal, a method for preparing the same, and a quantum dot-polymer composite or electronic device including the same.

The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia: ##STR00001##

The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia:

##STR00001##

The device provided herein is an organic electroluminescent device and includes a substrate; a first electrode on the substrate and with high reflectivity; a translucent or transparent second electrode over the first electrode; and a first, a second and a third organic layer included between the first and the second electrode; where the second organic layer has a thickness >80 nm and is made of a second organic material; the third organic layer is a light-emitting layer including at least one light-emitting material and at least one host material; the first organic layer has a conductivity >1×10.sup.−4 S/m and <1×10.sup.−2 S/m; an energy level difference between HOMO energy level of the second organic material and HOMO energy level of the at least one host material is <0.27 eV; and the first electrode and the second organic layer are in direct contact with the first organic layer.

The present invention relates to a compound of the Formula (I) ##STR00001##
wherein at least one of R.sup.1 to R.sup.10 and/or Ar.sup.4 is a group having the Formula (II) ##STR00002##
wherein the asterisk symbol “*” in Formula (II) represents the position of binding of the group having the Formula (II); L is selected from substituted or unsubstituted C.sub.6 to C.sub.18 arylene; Ar.sup.1 is selected from substituted or unsubstituted C.sub.3 to C.sub.24 heteroaryl, wherein the heteroaryl comprises at least two N-atoms; Ar.sup.2 and Ar.sup.3 are independently selected from substituted or unsubstituted C.sub.6 to C.sub.24 aryl and/or substituted or unsubstituted C.sub.4 to C.sub.24 heteroaryl, wherein Ar.sup.2 and Ar.sup.3 are selected differently from each other; Ar.sup.4 is selected from the group consisting of substituted or unsubstituted C.sub.1 to C.sub.16 alkyl, substituted or unsubstituted C.sub.6 to C.sub.24 aryl, substituted or unsubstituted C.sub.2 to C.sub.24 heteroaryl and a group having the general Formula (II); R.sup.1 to R.sup.10 are independently selected from the group consisting of H, D, F, C.sub.1 to C.sub.20 alkyl, C.sub.6 to C.sub.20 aryl, C.sub.2 to C.sub.20 heteroaryl and a group having the Formula (II); and R.sup.1 and R.sup.2; or R.sup.2 and R.sup.3 or R.sup.3; and R.sup.4; or R.sup.5 and R.sup.6 may independently from each other form a fused ring or system of fused rings; a semiconducting layer comprising the same, an organic electronic device comprising the same as well as a display or a lighting device comprising the organic electronic device.

Provided are a method of preparing quantum dots, a quantum dot prepared by the method, an optical member including the quantum dot, and an electronic apparatus including the quantum dot. The method includes: preparing a mixture of a semiconductor compound including indium (In), a first precursor including a first metal element, a second precursor including a second metal element, a third precursor including a third element, and a fourth precursor including a fourth element; and heating the mixture, wherein the first precursor and the second precursor are different from each other, and the third precursor and the fourth precursor are different from each other.

A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with along lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance. The electron-transport layer contains a material whose resistance decreases with current flowing therethrough.

A light emitting diode of an embodiment includes a first electrode, a second electrode, and at least one functional layer disposed between the first electrode and the second electrode, wherein the at least one functional layer includes a polycyclic compound represented by Formula A or Formula B, thereby showing high emission efficiency properties and improved life characteristics.

##STR00001##

A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with a long lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance. The electron-transport layer contains a material whose resistance decreases with current flowing therethrough.