Patent classifications
H10K85/331
Organic thin film including semiconducting polymer and elastomer configured to be dynamic intermolecular bonded with a metal-coordination bond and organic sensor and electronic device including the same
Disclosed are an organic thin film including a semiconducting polymer including a ligand that is metal-coordination bondable or is metal-coordination bonded and an elastomer including a ligand that is metal-coordination bondable or is metal-coordination bonded, wherein the semiconducting polymer and the elastomer are configured to be dynamic intermolecular bonded by a metal-coordination bond, an organic sensor, and an electronic device.
Inorganic hole conductor based perovskite photoelectric conversion device with high operational stability at long term
The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.
ORGANIC PHOTOELECTRIC CONVERSION DEVICE AND IMAGE SENSOR INCLUDING THE SAME
An organic photoelectric conversion device and an image sensor, the organic photoelectric conversion device including an upper electrode; a lower electrode; and an active layer between the upper electrode and the lower electrode, wherein the active layer includes bis-(4-dimethylaminodithiobenzyl)-Ni(II) (BDN) and [6,6]-Phenyl-C71-butyric acid methyl ester (PC70BM).
Dyes, dye-sensitized solar cells, and methods of making and using the same
Provided herein are dyes, dye-sensitized solar cells, and sequential series multijunction dye-sensitized solar cell devices. The dyes include an electron deficient acceptor moiety, a medium electron density ?-bridge moiety, and an electron rich donor moiety comprising a biaryl, a substituted biaryl, or an R1, R2, R3 substituted phenyl where each of R1, R2, and R3 independently comprises H, aryl, multiaryl, alkyl substituted aryl, alkoxy substituted aryl, alkyl substituted multiaryl, alkoxy substituted multiaryl, OR4, N(R5)2, or a combination thereof; each R4 independently comprises H, alkyl, aryl, alkyl substituted aryl, alkoxy substituted aryl, or a combination thereof; and each R5 independently comprises aryl, multiaryl, alkyl substituted aryl, alkoxy substituted aryl, alkyl substituted multiaryl, alkoxy substituted multiaryl, or a combination thereof. The solar cells include a glass substrate, a dye-sensitized active layer, and a redox shuttle. The devices include at least two dye-sensitized solar cells connected in series. ##STR00001##
ORGANIC LIGHT-EMITTING DEVICE
An organic light-emitting device including a first electrode, a second electrode, and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer includes an emission layer, the emission layer includes a host, a dopant, and a sensitizer, the host does not include a metal atom, the dopant emits light, and the light has a decay time of about 100 nanoseconds or less, and the sensitizer includes an organometallic compound represented by one selected from Formulae 1 and 2 described in the specification.
Metal-based tris-bipyridyl complexes and uses thereof in electrochromic applications
The present invention relates to metal-based tris-bipyridyl complexes, e.g., iron-based tris-bipyridyl complexes, and their use in fabrication of surface confined assemblies for electrochromic applications. Formulae I and II. ##STR00001##
DYES, DYE-SENSITIZED SOLAR CELLS, AND METHODS OF MAKING AND USING THE SAME
Provided herein are dyes, dye-sensitized solar cells, and sequential series multijunction dye-sensitized solar cell devices. The dyes include an electron deficient acceptor moiety, a medium electron density π-bridge moiety, and an electron rich donor moiety comprising a biaryl, a substituted biaryl, or an R.sup.1, R.sup.2, R.sup.3 substituted phenyl where each of R.sup.1, R.sup.2, and R.sup.3 independently comprises H, aryl, multiaryl, alkyl substituted aryl, alkoxy substituted aryl, alkyl substituted multiaryl, alkoxy substituted multiaryl, OR.sup.4, N(R.sup.5).sub.2, or a combination thereof, each R.sup.4 independently comprises H, alkyl, aryl, alkyl substituted aryl, alkoxy substituted aryl, or a combination thereof; and each R.sup.5 independently comprises aryl, multiaryl, alkyl substituted aryl, alkoxy substituted aryl, alkyl substituted multiaryl, alkoxy substituted multiaryl, or a combination thereof. The solar cells include a glass substrate, a dye-sensitized active layer, and a redox shuttle. The devices include at least two dye-sensitized solar cells connected in series.
DOPING ENGINEERED HOLE TRANSPORT LAYER FOR PEROVSKITE-BASED DEVICE
An optoelectronic device is provided, the p-doped HTL device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.
PHOTO DETECTOR
A photo detector is provided with a metal, a semiconductor, a first electrode, and a second electrode. In addition, a pre-treatment and/or a post-treatment is performed to the photo detector to reduce its noise and hence improves the signal-to-noise ratio (SNR). The provided photo detector can quickly respond to short mid-infrared light and generate low noise and high SNR currents.
OLED DEVICE AND PREPARATION METHOD THEREFOR AND DISPLAY APPARATUS
An OLED device and a manufacturing method thereof and a display apparatus are provided. The OLED device includes an anode, a cathode, and a functional layer disposed between the anode and the cathode, the cathode includes an organometallic layer, and the organometallic layer includes an organic metal. The OLED device is capable of increasing the stability of the cathode in the OLED device and reducing the cost of the OLED device.