Disclosed are inorganic nanoparticle quantum dots that effectively kill Gram-positive and Gram-negative bacteria resistant to antibiotics and the treatment of infectious bacterial diseases using the same, and more particularly inorganic nanoparticle quantum dots introduced with a hydrophilic ligand having activity of killing multidrug-resistant bacteria (MDR) and the use thereof. The quantum dots are capable of effectively killing bacteria when used at a low concentration by optimizing the core bandgap thereof and also do not exhibit cytotoxicity, and are thus useful as an agent for preventing or treating infectious diseases caused by multidrug-resistant bacteria.

The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia: ##STR00001##

A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.

The present invention relates to an organic electronic device comprising a substrate (110), an anode layer (120), a cathode layer (190), at least one first emission layer (150), and a hole injection layer (130), wherein • - the hole injection layer comprises a metal complex, wherein • - the metal complex comprises at least one electropositive metal atom having an electro-negativity value according to Allen of less than 2.4, and • - the metal complex comprises at least one anionic ligand comprising at least 4 covalently bound atoms; • - the anode layer comprises a first anode sub-layer (121) and a second anode sub-layer (122), wherein • - the first anode sub-layer comprises a first metal having a work function in the range of > 4 and < 6 eV, and • - the second anode sub-layer comprises a transparent conductive oxide; wherein • - the hole injection layer is arranged between the first emission layer and the anode layer, • - the first anode sub-layer is arranged closer to the substrate, and the second anode sub-layer is arranged closer to the hole injection layer.

The present invention relates to an organic electronic device comprising at least one inverse coordination complex, the N inverse coordination complex comprising: (i) a core consisting of one atom or of a plurality of atoms forming together a covalent cluster; (ii) a first coordination sphere consisting of at least four electropositive atoms having each individually an electronegativity according to Allen of less than 2,4; and (iii) a second coordination sphere comprising a plurality of ligands; wherein the first coordination sphere is closer to the core than the second coordination sphere; and all atoms of the core have a higher electronegativity according to Allen than any of the electropositive atoms of the first coordination sphere and a method for preparing the same.

A light-emitting element includes: a cathode; an anode; a light-emitting layer provided between the cathode and the anode and containing quantum dots; an electron-transport layer provided between the light-emitting layer and the cathode; and a hole-transport layer provided between the light-emitting layer and the anode. The light-emitting layer includes a first light-emitting layer containing first quantum dots to which first ligands are coordinated, and further includes a second light-emitting layer provided closer to the electron-transport layer than to the first light-emitting layer, and containing second quantum dots to which second ligands are coordinated. A dipole moment of the first ligands is larger than a dipole moment of the second ligands.

The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia:

##STR00001##

The present specification relates to a compound represented by Chemical Formula 1, a composition for forming an optical film and an optical film comprising the same, and a display device comprising the optical film.

Provided are a method of preparing quantum dots, a quantum dot prepared by the method, an optical member including the quantum dot, and an electronic apparatus including the quantum dot. The method includes: preparing a mixture of a semiconductor compound including indium (In), a first precursor including a first metal element, a second precursor including a second metal element, a third precursor including a third element, and a fourth precursor including a fourth element; and heating the mixture, wherein the first precursor and the second precursor are different from each other, and the third precursor and the fourth precursor are different from each other.

An object of the present invention is to provide a photoelectric conversion element excellent in suppression of a change in an external quantum efficiency during a continuous drive. In addition, an imaging element and an optical sensor related to the photoelectric conversion element are provided. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, contains a first compound that has a maximum absorption wavelength at a wavelength of 500 to 620 nm, and that is a compound represented by Formula (1), and contains a second compound that is different from the first compound and that has a maximum absorption wavelength at a wavelength of 450 to 550 nm.

##STR00001##