Disclosed is a perovskite precursor solution for improving stability of a perovskite solar cell. Iodoformamidine and cesium iodide are added into a solvent, and bromomethylamine, lead iodide and 3,4-dichloroaniline are added after stirring to obtain the perovskite precursor solution. The perovskite precursor solution is spin-coated on a substrate, obtaining a perovskite thin film by thermal annealing as a light absorption layer of the solar cell. The perovskite precursor solution prepared by the present invention replaces an existing perovskite layer, the defects in the existing perovskite mineralization technology are solved. The perovskite stability improvement leads lower requirements for the process environment and convenient preparation method, realizes the long-time stable performance in a common environment.

A solar cell includes a first substrate, a first electrode layer, a first electron transport layer, a first photoelectric conversion layer, a first hole transport layer, a second electrode layer, a third electrode layer, a second electron transport layer, a second photoelectric conversion layer, a second hole transport layer, a fourth electrode layer, and a second substrate that are disposed in the order stated. The first photoelectric conversion layer includes a first perovskite compound, and the second photoelectric conversion layer includes a second perovskite compound. The first perovskite compound has a bandgap greater than a bandgap of the second perovskite compound.

Disclosed are a perovskite photoelectric device and a method of fabricating the same. A perovskite photoelectric device according to an embodiment of the present invention includes a first electrode; a hole transport layer formed on the first electrode; a perovskite layer formed on the hole transport layer and made of a first perovskite compound; an electron transport layer formed on the perovskite layer; a second electrode formed on the electron transport layer; and a graded wall formed on the hole transport layer and the perovskite layer and made of a second perovskite compound, wherein the first perovskite compound and the second perovskite compound are represented by Formula 1 below, and the graded wall suppresses movement of anions included in the perovskite layer:

A.sub.aM.sub.bX.sub.c  [Formula 1]

where A is a monovalent cation, M is a divalent or trivalent metal cation, X is a monovalent anion, a+2b=c when M is a divalent metal cation, a+3B=c when M is a trivalent metal cation, and a, b and c are natural numbers.

Provided is a method for preparing a perovskite electronic device including steps of: forming an electron transport layer and a second light absorption layer including a perovskite material each independently on a first substrate and a second substrate; forming a first light absorption layer including a perovskite material on the electron transport layer; coating a solvent on the surface of the first light absorption layer and the second light absorption layer; bonding the second light absorption layer on the first light absorption layer; removing the second substrate; forming a hole transport layer on the second light absorption layer; and forming an electrode on the hole transport layer.

The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material, and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer

The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material, and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer

The invention is in the field of semiconductors. The invention is directed to a composition, a method for producing a layer, a layer, a photoconducting device and a photovoltaic device. The composition of the invention comprises a matrix comprising a polymer, and dispersed in said matrix one or more perovskite materials.

The invention is in the field of semiconductors. The invention is directed to a composition, a method for producing a layer, a layer, a photoconducting device and a photovoltaic device. The composition of the invention comprises a matrix comprising a polymer, and dispersed in said matrix one or more perovskite materials.

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1×10.sup.−7 S/cm.

Disclosed are a solar cell including an upper cell includes an upper passivation layer disposed on an upper surface of a functional layer, a transparent electrode disposed on an upper surface of the upper passivation layer, an upper first charge transport layer disposed on an upper surface of the transparent electrode, an upper electrode disposed on the upper first of the transparent electrode to be adjacent to the upper surface charge transport layer, an upper second charge transport layer disposed on the upper surface of the functional layer to be spaced apart from the upper passivation layer, the transparent electrode, the upper first charge transport layer, and the upper electrode, and an upper absorption layer disposed on the upper passivation layer, the transparent electrode, the upper first charge transport layer, and the upper second charge transport layer.