A chip of thermoelectric conversion material may have a concave portion and may be capable of realizing high joining properties to an electrode. Such a chip of thermoelectric conversion material may have a concave on at least one surface of the chip of thermoelectric conversion material. The shape of such chips of may be rectangular parallelepiped, cubic, and/or columnar shape.

The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.

A thermoelectric element according to one embodiment of the present disclosure includes a lower metal substrate, a lower insulating layer disposed on the lower metal substrate, a plurality of lower electrodes disposed on the lower insulating layer to be spaced apart from each other, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of lower electrodes, a plurality of upper electrodes disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs to be spaced apart from each other, an upper insulating layer disposed on the plurality of upper electrodes, and an upper metal substrate disposed on the upper insulating layer, wherein the lower insulating layer includes a first insulating layer disposed on the lower metal substrate and a plurality of second insulating layers disposed on the first insulating layer to be spaced apart from each other.

A catheter has a cooling distal section for freezing tissue to sub-zero temperatures with one or more miniature reverse thermoelectric or Peltier elements, also referred to herein as micro-Peltier cooling (MPC) units or electrodes. The MPC units may be on outer surface of an inflatable or balloon member or a tip electrode shell wall that has a fluid-containing interior cavity acting as a heat sink. Each MPC unit has a hot junction and a cold junction whose temperatures are regulated by the heat sink, and a voltage/current applied to the MPC units. A temperature differential of about 70 degrees Celsius may be achieved between the hot and cold junctions for extreme cooling, especially where the MPC units include semiconductor materials with high Peltier co-efficients. An outer coating of thermally-conductive but electrically-insulative material seals the MPC units to prevent unintended current paths through the MPC units.

A sensing system including in-ground sensors not requiring battery power. A thermoelectric generator sensor rod includes an upper thermal contact and a lower thermal contact at or near its two ends. When the thermoelectric generator sensor rod is buried in the ground with one end buried more deeply than the other, a temperature gradient in the soil produces a temperature difference between the upper thermal contact and the lower thermal contact. The upper thermal contact and the lower thermal contact are thermally connected to a thermoelectric generator, e.g., by heat pipes or thermally conductive rods. Electrical power generated by the thermoelectric generator powers sensors for monitoring conditions in the ground, and circuitry for transmitting sensor data to a central data processing system.

The present disclosure is related to thermoelectric panels and their use in cooling and heating systems. The cooling/heating systems may include a plurality of thermoelectric panels. The panels may include thermoelectric devices embedded between a housing formed by heat conductive layers and edge structures for preserve a low thermal conductivity volume.

The present disclosure is related to thermoelectric panels and their use in cooling and heating systems. The cooling/heating systems may include a plurality of thermoelectric panels. The panels may include thermoelectric devices embedded between a housing formed by heat conductive layers and edge structures for preserve a low thermal conductivity volume.

A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by A.sub.x-cB.sub.y with value of x being smaller by c with respect to a compound A.sub.xB.sub.y according to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.

A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by A.sub.x-cB.sub.y with value of x being smaller by c with respect to a compound A.sub.xB.sub.y according to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.