An electronic component may include a carrier, and a thermoelectric sensor and a power transistor which are arranged on the carrier. The power transistor may include a base layer containing a transistor material chosen from among gallium nitride, aluminium gallium nitride, gallium arsenide, indium gallium, indium gallium nitride, aluminium nitride, indium aluminium nitride, and mixtures thereof. The electronic component may be configured so that the thermoelectric sensor generates an electric current under the effect of heating from the power transistor.

A thermoelectric element according to one embodiment of the present disclosure includes a first substrate, a first buffer layer disposed on the first substrate, a first electrode disposed on the first buffer layer, a P-type thermoelectric leg and an N-type thermoelectric leg disposed on the first electrode, a second electrode disposed on the P-type thermoelectric leg and the N-type thermoelectric leg, a second buffer layer disposed on the second electrode, and a second substrate disposed on the second buffer layer, wherein at least one of the first buffer layer and the second buffer layer includes a silicone resin and an inorganic material, and the Young's modulus of at least one of the first buffer layer and the second buffer layer is 1 to 65 MPa.

A thermoelectric conversion material includes Mg.sub.2Si.sub.xSn.sub.1−x (where 0.3≤X≤1) and a boride containing one or two or more metals selected from titanium, zirconium, and hafnium. Further, it is preferable that the boride is one or two or more selected from TiB.sub.2, ZrB.sub.2, and HfB.sub.2.

A thermoelectric conversion material includes Mg.sub.2Si.sub.xSn.sub.1−x (where 0.3≤X≤1) and a boride containing one or two or more metals selected from titanium, zirconium, and hafnium. Further, it is preferable that the boride is one or two or more selected from TiB.sub.2, ZrB.sub.2, and HfB.sub.2.

A CaTiO.sub.3-based oxide thermoelectric material and a preparation method thereof are disclosed. The CaTiO.sub.3-based oxide thermoelectric material has a chemical formula of Ca.sub.1-xLa.sub.xTiO.sub.3, where 0<x≤0.4. The present disclosure makes it possible to prepare a CaTiO.sub.3-based thermoelectric material with properties comparable to n-type ZnO, CaTiO.sub.3, SrTiO.sub.3 and other oxide thermoelectric materials. Among them, the La15 sample has a power factor reaching up to 8.2 μWcm.sup.−1K.sup.−2 (at about 1000 K), and a power factor reaching up to 9.2 μWcm.sup.−1K.sup.−2 at room temperature (about 300 K); and a conductivity reaching up to 2015 Scm.sup.−1 (at 300 K). The CaTiO.sub.3-based oxide thermoelectric material exhibits the best thermoelectric performance among calcium titanate ceramics. The method for preparing the CaTiO.sub.3-based oxide thermoelectric material of the present disclosure is simple in process, convenient in operation, low in cost, and makes it possible to prepare a CaTiO.sub.3-based ceramic sheet with high thermoelectric performance.

A catheter has a cooling distal section for freezing tissue to sub-zero temperatures with one or more miniature reverse thermoelectric or Peltier elements, also referred to herein as micro-Peltier cooling (MPC) units or electrodes. The MPC units may be on outer surface of an inflatable or balloon member or a tip electrode shell wall that has a fluid-containing interior cavity acting as a heat sink. Each MPC unit has a hot junction and a cold junction whose temperatures are regulated by the heat sink, and a voltage/current applied to the MPC units. A temperature differential of about 70 degrees Celsius may be achieved between the hot and cold junctions for extreme cooling, especially where the MPC units include semiconductor materials with high Peltier co-efficients. An outer coating of thermally-conductive but electrically-insulative material seals the MPC units to prevent unintended current paths through the MPC units.

The present disclosure is related to thermoelectric panels and their use in cooling and heating systems. The cooling/heating systems may include a plurality of thermoelectric panels. The panels may include thermoelectric devices embedded between a housing formed by heat conductive layers and edge structures for preserve a low thermal conductivity volume.

The present disclosure is related to thermoelectric panels and their use in cooling and heating systems. The cooling/heating systems may include a plurality of thermoelectric panels. The panels may include thermoelectric devices embedded between a housing formed by heat conductive layers and edge structures for preserve a low thermal conductivity volume.

The present invention provides a thermoelectric material excellent in heat resistance with less degradation of thermoelectric characteristics even in a high temperature environment. The thermoelectric material comprises a compound represented by a chemical formula Mg.sub.2Si.sub.1-xSn.sub.x (0<x<1) wherein at least one of the Si site and the Sn site of the compound is replaced with at least one of Sb and Bi, and an added Fe.

The present disclosure relates to a method of fabricating a thermoelectric device. The method includes disposing a metal layer on a dielectric layer to form a sub-assembly, forming patterned circuits on the metal layer, forming blind vias in the dielectric layer, fabricating first thermoelectric elements in a first series of blind vias, and fabricating second thermoelectric elements in a second series of blind vias to form thermoelectric units with the first thermoelectric elements and the patterned circuits. The sub-assembly is configured to be joined to an adjacent sub-assembly along a first direction, and the first and second thermoelectric elements of each thermoelectric unit are aligned in a second direction substantially perpendicular to the first direction. The present disclosure further relates to a thermoelectric device which includes a plurality of thermoelectric units forming a strip extending in a first direction.