A piezoelectric element connection structure, a vehicle, and a piezoelectric element connection method are disclosed. This piezoelectric element connection structure includes: a body; a casing that include a bottom and is fixedly connected to the body so as to face the placing area for the board; a piezoelectric element that is placed on the bottom; and a coil wire that includes a winding shape, extends from the piezoelectric element toward the placing area for the board, and electrically connects between the piezoelectric element and the board.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

A manufacturing method of micro fluid actuator includes: providing a substrate; depositing a first protection layer on a first surface of the substrate; depositing an actuation region on the first protection layer; applying lithography dry etching to a portion of the first protection layer to produce at least one first protection layer flow channel; applying wet etching to a portion of a main structure of the substrate to produce a chamber body and a first polycrystalline silicon flow channel region, while a region of an oxidation layer middle section of the main structure is not etched; applying reactive-ion etching to a portion of a second surface of the substrate to produce at least one substrate silicon flow channel; and applying dry etching to a portion of a silicon dioxide layer to produce at least one silicon dioxide flow channel.

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

There are provided a laminated piezoelectric element in which a stress applied to an interface between a cover layer and a stacked body is reduced, and an injection device and a fuel injection system provided with the laminated piezoelectric element. A laminated piezoelectric element includes a stacked body in which piezoelectric layers and internal electrode layers are alternately laminated; and a cover layer disposed so as to surround a side face of the stacked body, and the cover layer has a two-layer structure with an annular boundary when viewed in a section perpendicular to a stacking direction of the stacked body.

A linear valve drive for connection to a valve body which has a valve seat is described, wherein said linear valve drive comprises a drive housing, a valve closure element and a piezoelectric actuator which is arranged within said drive housing. Said valve closure element is displaceable in the axial direction between an open position and a closed position by means of said piezoelectric actuator and an interposed actuating device. Said piezoelectric actuator is supported on said actuating device via its side directed towards the valve closure element. Said linear valve drive comprises an adjusting device which is configured such that an idle stroke of said linear valve drive is adjustable. A valve is also described.

A MEMS component having increased integration density and a method for manufacturing such a component are specified. The component comprises a base wafer and a cover wafer arranged over this. A first cavity is arranged between the base wafer and the cover wafer. A second cavity is arranged over the cover wafer, below a thin-layer covering. The cavities contain component structures.

A thin, flexible computerized sensing platform which can be affixed to a structure to be sensed, which has excellent mechanical coupling between the sensors and the object to be sensed, which can be self-powered and rechargeable, and which can be environmentally sealed, and a method for assembling and utilizing the same.

A thin, flexible computerized sensing platform which can be affixed to a structure to be sensed, which has excellent mechanical coupling between the sensors and the object to be sensed, which can be self-powered and rechargeable, and which can be environmentally sealed, and a method for assembling and utilizing the same.

A process for producing a piezoelectric sensor includes the following steps: a step of providing a housing made of stainless steel; a step of producing a solution of a compound comprising a metal or metalloid element; a step of depositing a layer of the solution over at least one inner surface of the housing; a step of oxidizing the deposited layer of solution; a step of placing a piezoelectric element inside the housing; a step of closing the housing. A piezoelectric sensor obtained by such a process and comprising a closed steel housing, a piezoelectric element arranged inside the housing and a layer of a solution of a compound comprising a metal or metalloid element that is arranged over at least one inner surface of the housing.