A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.

A piezoelectric element including a piezoelectric layer having a perovskite structure including lead, zirconium, and titanium, and an electrode provided on the piezoelectric layer is provided. In the piezoelectric layer, in a range of 50 nm or smaller from an interface between the piezoelectric layer and the electrode in a thickness direction, a ratio c/a of a lattice spacing a in a direction perpendicular to the thickness direction and a lattice spacing c in the thickness direction satisfies 0.986≤c/a≤1.014.

The present invention relates to a method for chemically adhering a diene rubber to a piezoelectric polymer, the method comprising the steps of: a) providing a piezoelectric polymer having at least one surface, b) providing a rubber component having at least one surface and comprising a sulfur cross-linkable rubber composition, c) introducing oxygen-containing functional groups on the at least one surface of the piezoelectric polymer, d) reacting the oxygen-containing functional groups with a compound comprising thiocyanate groups, and e) contacting the surface of the piezoelectric polymer obtained of step d) with the surface of the rubber component, and cross-linking.

The disclosure provides a piezoelectric element and a method for manufacturing a piezoelectric element. The disclosure provides the piezoelectric element comprising: a base layer, a piezoelectric layer which is disposed on one surface of the base layer, and in which upwardly curved convex portions and downwardly curved concave portions are continuously disposed along a first direction; and contact members which are disposed on the concave portions of the piezoelectric layer and on the one surface of the base layer to connect the piezoelectric layer to the base layer.

In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.

An imaging assembly for an intraluminal device is provided. In one embodiment, the imaging assembly includes: an array of ultrasound transducer elements spaced apart by air kerfs; a plurality of buffer elements surrounding the array of ultrasound transducer elements, wherein the plurality of buffer elements are spaced apart by gaps; and a sealing material filling portions of the gaps between the plurality of buffer elements.

A foil transducer for a valve, including at least one firmly arranged holding part, at least one displaceable force transmission part, an electroactive foil composite structure and at least two electrodes. The electroactive foil composite structure has an actuating direction in which the electroactive foil composite structure is extended on actuation. The actuating direction lies in a plane spanned by the electroactive foil composite structure.

Various embodiments of the present disclosure are directed towards an integrated chip including a piezoelectric membrane overlying a substrate. A plurality of conductive layers is disposed within the piezoelectric membrane. The plurality of conductive layers comprises a first conductive layer over a second conductive layer. The first conductive layer comprises a first electrode and the second conductive layer comprises a second electrode. A first conductive via is disposed in the piezoelectric membrane and contacts the first electrode. A second conductive via is disposed in the piezoelectric membrane and contacts the second electrode. A sidewall of the second conductive via comprises a vertical sidewall segment overlying a slanted sidewall segment.

An imaging assembly for an intraluminal device is provided. In one embodiment, the imaging assembly includes: an array of ultrasound transducer elements spaced apart by air kerfs; a plurality of buffer elements surrounding the array of ultrasound transducer elements, wherein the plurality of buffer elements are spaced apart by gaps; and a sealing material filling portions of the gaps between the plurality of buffer elements

A layered portion includes, at least above an opening, a first single-crystal piezoelectric body layer, a second single-crystal piezoelectric body layer, an intermediate electrode layer, a lower electrode layer, and an upper electrode layer. The first single-crystal piezoelectric body layer includes a material that produces a difference in etching rate between a positive side and a negative side of a polarization charge. The polarization charge of the first single-crystal piezoelectric body layer is positive on a side of the intermediate electrode layer and negative on a side of the lower electrode layer