A piezoelectric composite material is based on a polymeric matrix and on piezoelectric inorganic fillers, characterized in that the material additionally comprises at least one ionic liquid of general formula Q+ A−, in which Q+ represents a cation chosen from quaternary ammonium cations and quaternary phosphonium cations and A− represents any anion capable of forming a liquid salt at a temperature of less than 100° C. A device comprising at least one layer based at least one piezoelectric composite material defined above and at least two electrodes positioned on either side of the layer and a tire comprising at least one piezoelectric device defined above are also set forth.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.

The present invention relates to a method for producing piezoelectric multi-layered components (2), which comprises the following steps: applying an electrode material (5) to green sheets (3) containing a piezoelectric material, applying a layer of a first auxiliary material (9) to at least one green sheet (3) containing the piezoelectric material, forming a stack (1), in which the green sheets (3), to which electrode material (5) is applied, are arranged one on top of another, wherein at least one ply of the green sheet (3), to which the layer of the first auxiliary material (9) is applied, is arranged in the stack (1), sintering the stack (1), wherein the layer of the first auxiliary material (9) is thinned, and firing the stack (1), wherein the stack (1) is singulated along the at least one ply into at least two multi-layered components (2).

Disclosed herein is a piezoresistive pressure sensor, including: a continuous piezoresistive foam layer; an electrode array layer, on one side of which the continuous piezoresistive foam layer is disposed; and an artificial leather layer as cover layer, which is disposed on the continuous piezoresistive foam layer; where the continuous piezoresistive foam layer is made by doping the foam with conductive materials. The piezoresistive pressure sensor can provide overall 2D-pressure mapping in a large area and has good flexibility and reliability to be combined with soft surfaces.

Disclosed herein is a piezoresistive pressure sensor, including: a continuous piezoresistive foam layer; an electrode array layer, on one side of which the continuous piezoresistive foam layer is disposed; and an artificial leather layer as cover layer, which is disposed on the continuous piezoresistive foam layer; where the continuous piezoresistive foam layer is made by doping the foam with conductive materials. The piezoresistive pressure sensor can provide overall 2D-pressure mapping in a large area and has good flexibility and reliability to be combined with soft surfaces.

An actuator includes a plurality of laminated electrode sheets, and adhesive layers provided between the electrode sheets adjacent to each other. Each electrode sheet includes an elastomer layer, and an electrode provided on the elastomer layer. The plurality of electrode sheets are laminated such that the elastomer layer and the electrode are alternately located, and the adhesive layer is thinner than the electrode.

A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.

A microphone device may include: a substrate wafer, a support member bonded to a front surface of the substrate wafer, a single-crystal piezoelectric film provided over the support member, a top electrode and a bottom electrode. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The top electrode may be arranged adjacent to the first surface of the single-crystal piezoelectric film. The bottom electrode may be arranged adjacent to the second surface of the single-crystal piezoelectric film. The substrate wafer may have a through-hole formed therein. The through-hole of the substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.

A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.