A manufacturing method of a composite substrate capable of suppressing damage due to heat treatment after bonding, and a composite substrate manufactured by the method are provided. The manufacturing method of a composite substrate according to the present invention is a manufacturing method of a composite substrate in which a piezoelectric wafer, which is a lithium tantalate wafer or lithium niobate wafer, and a support wafer are bonded together. This manufacturing method is characterized by a step of bonding a piezoelectric wafer and a support wafer, and a step of performing heat treatment of the wafer bonded in the step of bonding, with the non-bonded surface of the piezoelectric wafer being a mirror surface.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

A piezoelectric device includes a connection section including a first coupling portion, a second coupling portion, and a bridging portion. The first coupling portion extends along a slit and is connected to one of a pair of beam sections. The second coupling portion extends along the slit and is connected to another of the pair of beam sections. The bridging portion is located between the slit and an opening and is connected to both of the first coupling portion and the second coupling portion. The beam sections are connected to each other in a circumferential direction of a base having an annular shape via the connecting section while each of the beam sections is interposed between the slits extending in intersecting directions.

A method for manufacturing a film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit the film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

The present invention relates to a method for producing piezoelectric multi-layered components (2), which comprises the following steps: applying an electrode material (5) to green sheets (3) containing a piezoelectric material, applying a layer of a first auxiliary material (9) to at least one green sheet (3) containing the piezoelectric material, forming a stack (1), in which the green sheets (3), to which electrode material (5) is applied, are arranged one on top of another, wherein at least one ply of the green sheet (3), to which the layer of the first auxiliary material (9) is applied, is arranged in the stack (1), sintering the stack (1), wherein the layer of the first auxiliary material (9) is thinned, and firing the stack (1), wherein the stack (1) is singulated along the at least one ply into at least two multi-layered components (2).

A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

A resonator device includes a quartz crystal substrate, a resonator element including a first excitation electrode arranged on a first surface of the quartz crystal substrate, a second excitation electrode arranged on a second surface of the quartz crystal substrate in opposition to the first excitation electrode, and first and second pad electrodes that are arranged on the first surface and are coupled to the first and second excitation electrodes, a base including a substrate and first and second interconnects arranged on the substrate, a first bonding member bonding the first pad electrode to the first interconnect, and a second bonding member bonding the second pad electrode to the second interconnect. The first and second bonding members are arranged such that a first imaginary line that passes through a centroid of the resonator element and is parallel to an X axis is interposed between the first and second bonding members. An angle θ1 formed between the first imaginary line and a second imaginary line passing through the first bonding member and the second bonding member is 100°<θ1<140°.

A process for fabricating a micro-electro-mechanical system, includes the following steps: production of a stack on the surface of a temporary substrate so as to produce a first assembly, comprising: at least depositing a piezoelectric material or a ferroelectric material to produce a layer of piezoelectric material or of ferroelectric material; producing a first bonding layer; production of a second assembly comprising at least producing a second bonding layer on the surface of a host substrate; production of at least one acoustic isolation structure in at least one of the two assemblies; production of at least one electrode level containing one or more electrodes in at least one of the two assemblies; bonding the two assemblies via the two bonding layers, before or after the production of the at least one electrode level in at least one of the two assemblies; removing the temporary substrate.