Patent classifications
H10N30/501
LAMINATED PIEZOELECTRIC ELEMENT
Provided is a laminated piezoelectric element capable of suppressing a short circuit between piezoelectric films in a laminated piezoelectric element in which a plurality of layers of a piezoelectric film formed by interposing a piezoelectric layer between an electrode layer and a protective layer are laminated. The laminated piezoelectric element is formed by laminating a plurality of layers of piezoelectric films each having a piezoelectric layer, two electrode layers between which the piezoelectric layer is interposed, and two protective layers respectively covering the electrode layers. At least a part of each end side of the adjacent piezoelectric films is located at a different position in a plane direction.
BONE CONDUCTION SOUND TRANSMISSION DEVICES
The present disclosure is of a bone conduction sound transmission device. The bone conduction sound transmission device includes of a laminated structure and a base structure. The laminated structure is formed by a vibration unit and an acoustic transducer unit. The base structure is configured to load the laminated structure. At least one side of the laminated structure is physically connected to the base structure. The base structure vibrates based on an external vibration signal, and the vibration unit deforms in response to the vibration of the base structure; and the acoustic transducer unit generates an electrical signal based on the deformation of the vibration unit.
Piezoelectric device and method of forming the same
A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.
Piezoelectric actuator
There is provided a piezoelectric actuator, including: a vibration plate; a first piezoelectric body; a second piezoelectric body; a first electrode disposed on a first surface of the first piezoelectric body; a second electrode disposed on a second surface of the second piezoelectric body; an intermediate electrode disposed on an intermediate surface of the first piezoelectric body and overlapping with the first and second electrodes; an intermediate trace connected to the intermediate electrode on the intermediate surface and drawn out to one side in a first direction beyond the first piezoelectric body and the second piezoelectric body; a first trace overlapping with the intermediate trace in the thickness direction and being conducted with the intermediate trace; and a second trace overlapping with the intermediate trace in the thickness direction and being conducted with the intermediate trace.
Wafer level ultrasonic chip module and manufacturing method thereof
A wafer level ultrasonic chip module includes a substrate, a composite layer, a conducting material, and a base material. The substrate has a through slot that passes through an upper surface of the substrate and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The protective layer has an opening, from which a partial upper surface of the ultrasonic body is exposed. The conducting material is in contact with the upper surface of the ultrasonic body. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.
Methods and systems for wafer scale transducer array fabrication
Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array may be fabricated via a wafer scale approach, where a first comb structure, with a first type of element, is formed by dicing a first acoustic stack and a second comb structure, with a second type of element, is formed by dicing a second acoustic stack. Combining the first and second comb structures may form a multi-frequency transducer array.
PIEZOELECTRIC DEVICE AND METHOD OF FORMING THE SAME
A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.
Metal stack templates for suppressing secondary grains in sca1n
A metal stack for templating the growth of AlN and ScAlN films is disclosed. The metal stack comprises one, two, or three layers of metal, each of which is compatible with CMOS post-processing. The metal stack provides a template that promotes the growth of highly textured c-axis {002} AlN and ScAlN films. The metal stacks include one or more metal layers with each metal layer having either a hexagonal {002} orientation or a cubic {111} orientation. If the metal stack includes two or more metal layers, the layers can alternate between hexagonal {002} and cubic {111} orientations. The use of ScAlN results in a higher piezoelectric constant compared to that of AlN for ScAlN alloys up to approximately 44% Sc. The disclosed metal stacks resulted in ScAlN films having XRD FWHM values of less than approximately 1.1° while significantly reducing the formation of secondary grains in the ScAlN films.
Piezoelectric MEMS devices and methods of forming thereof
In a non-limiting embodiment, a device may include a substrate, and a hybrid active structure disposed over the substrate. The hybrid active structure may include an anchor region and a free region. The hybrid active structure may be connected to the substrate at least at the anchor region. The anchor region may include at least a segment of a piezoelectric stack portion. The piezoelectric stack portion may include a first electrode layer, a piezoelectric layer over the first electrode layer, and a second electrode layer over the piezoelectric layer. The free region may include at least a segment of a mechanical portion. The piezoelectric stack portion may overlap the mechanical portion at edges of the piezoelectric stack portion.
Structured actuators
An actuator assembly includes (i) a first actuator stack having a first primary electrode, a first secondary electrode overlapping at least a portion of the first primary electrode, and a first electroactive layer disposed between and abutting the first primary electrode and the first secondary electrode, (ii) a second actuator stack having a second primary electrode, a second secondary electrode overlapping at least a portion of the second primary electrode, and a second electroactive layer disposed between and abutting the second primary electrode and the second secondary electrode; and (iii) a bonding layer disposed between the first actuator stack and the second actuator stack.