A piezoelectric composite material is based on a polymeric matrix and on piezoelectric inorganic fillers, characterized in that the material additionally comprises at least one ionic liquid of general formula Q+ A−, in which Q+ represents a cation chosen from quaternary ammonium cations and quaternary phosphonium cations and A− represents any anion capable of forming a liquid salt at a temperature of less than 100° C. A device comprising at least one layer based at least one piezoelectric composite material defined above and at least two electrodes positioned on either side of the layer and a tire comprising at least one piezoelectric device defined above are also set forth.

A piezoelectric composite material is based on a polymeric matrix and on piezoelectric inorganic fillers, characterized in that the material additionally comprises at least one ionic liquid of general formula Q+ A−, in which Q+ represents a cation chosen from quaternary ammonium cations and quaternary phosphonium cations and A− represents any anion capable of forming a liquid salt at a temperature of less than 100° C. A device comprising at least one layer based at least one piezoelectric composite material defined above and at least two electrodes positioned on either side of the layer and a tire comprising at least one piezoelectric device defined above are also set forth.

A manufacturing method of a composite substrate capable of suppressing damage due to heat treatment after bonding, and a composite substrate manufactured by the method are provided. The manufacturing method of a composite substrate according to the present invention is a manufacturing method of a composite substrate in which a piezoelectric wafer, which is a lithium tantalate wafer or lithium niobate wafer, and a support wafer are bonded together. This manufacturing method is characterized by a step of bonding a piezoelectric wafer and a support wafer, and a step of performing heat treatment of the wafer bonded in the step of bonding, with the non-bonded surface of the piezoelectric wafer being a mirror surface.

A piezoelectric ceramic, which does not contain lead as a constituent element, is characterized in that: its primary component is a perovskite compound expressed by the composition formula (Bi.sub.0.5−x/2Na.sub.0.5−x/2Ba.sub.x)(Ti.sub.1−yMn.sub.y)O.sub.3 (where 0.01≤x≤0.25, 0.001≤y≤0.020); and the coefficient of variation (CV) in grain size among the grains contained therein is 35 percent or lower. The piezoelectric ceramic presents an improved dielectric loss tangent tan δ.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.

A single crystal piezoelectric layer includes a first recess in a first opposing surface opposing a first main surface of a base. The single crystal piezoelectric layer is bonded to the first main surface of the base at a portion of the first opposing surface other than the first recess. A lower electrode layer defining at least a portion of a pair of electrode layers and extending over a surface of the single crystal piezoelectric layer opposing the base is at least partially located in the first recess. A second opposing surface of the lower electrode layer opposing the first main surface of the base has surface roughness greater than the surface roughness of the first opposing surface of the single crystal piezoelectric layer.

A method for manufacturing a film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit the film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.

A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

A display device includes a touch panel; a display panel under the touch panel and displaying an image; a piezoelectric element under the touch panel and including an upper electrode, a lower electrode and a piezoelectric layer; and a rectifying circuit connected to the piezoelectric element.