A Hall element that exhibits an anomalous Hall effect includes a substrate and a thin film as a magneto-sensitive layer on the substrate, the thin film having a composition of Fe.sub.xSn.sub.1-x, where 0.5≤x<0.9. The thin film may be made of an alloy of Fe and Sn, and a dopant element. The dopant element may be a transition metal element that modulates spin-orbit coupling or magnetism. The dopant element may be a main-group element that has a different number of valence electrons from Sn and modulates carrier density. The dopant element may be a main-group element that modulates density of states.

A material exhibiting transport phenomena of Weyl fermions is composed of SrRuO.sub.3 and has a ratio of a resistivity p at 300 K to a resistivity p at 4 K [residual resistivity ratio RRR=ρ(300 K)/ρ(4 K)] of 20 or greater.

A magnetoresistive effect element includes a reference layer, a barrier layer, a recording layer, and a channel layer that are disposed on top of one another, and a first terminal connected to the reference layer, and a second terminal and a third terminal connected to the channel layer. The channel layer includes a first channel layer and a second channel layer, the first channel layer has electrical resistance larger than electrical resistance of the second channel layer, the second terminal is connected to the first channel layer, and the third terminal is connected to the second channel layer, a write current flows between the second terminal and the third terminal via the first channel layer and the second channel layer, and a read current flows between the first terminal and the third terminal.

A magnetoresistive effect element includes a reference layer, a barrier layer, a recording layer, and a channel layer that are disposed on top of one another, and a first terminal connected to the reference layer, and a second terminal and a third terminal connected to the channel layer. The channel layer includes a first channel layer and a second channel layer, the first channel layer has electrical resistance larger than electrical resistance of the second channel layer, the second terminal is connected to the first channel layer, and the third terminal is connected to the second channel layer, a write current flows between the second terminal and the third terminal via the first channel layer and the second channel layer, and a read current flows between the first terminal and the third terminal.

This patent document provides implementations and examples of circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued states. In one aspect, a semiconductor device is configured to comprise: a multi-layer structure forming a magnetoelectric or multiferroic system to include a ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying metal structure exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states.

This patent document provides implementations and examples of circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued states. In one aspect, a semiconductor device is configured to comprise: a multi-layer structure forming a magnetoelectric or multiferroic system to include a ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying metal structure exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states.

This magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer in contact with the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a first layer, a second layer, and a third layer in order from a side closer to the first ferromagnetic layer, and a coefficient of linear expansion of a material forming the second layer is between a coefficient of linear expansion of a material forming the first layer and a coefficient of linear expansion of a material forming the third layer.

This magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer in contact with the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a first layer, a second layer, and a third layer in order from a side closer to the first ferromagnetic layer, and a coefficient of linear expansion of a material forming the second layer is between a coefficient of linear expansion of a material forming the first layer and a coefficient of linear expansion of a material forming the third layer.

Provided are a spin orbit torque magnetic random access memory cell, a memory array and a memory, wherein the spin orbit torque magnetic random access memory cell includes: a magnetic tunnel and a selector; the selector is a two-dimensional material based selector; the magnetic tunnel junction is arranged above or below the selector; the magnetic tunnel junction includes an antiferromagnetic layer and a free layer; the free layer is adjacent to the antiferromagnetic layer; when the selector is turned on, the memory cell is conducted, a current generates a spin current which is injected into the free layer, and a magnetization direction of the free layer is switched by the exchange bias effect between the free layer and the antiferromagnetic layer. A deterministic magnetization switching of SOT-MRAM memory cell under zero magnetic field at room temperature may be implemented without an external magnetic field by using the exchange bias effect and applying an optimized bias voltage of the magnetic tunnel junction, so as to achieve a purpose of data writing and implement SOT-MRAM memory cell with double terminal structure.

Provided are a spin orbit torque magnetic random access memory cell, a memory array and a memory, wherein the spin orbit torque magnetic random access memory cell includes: a magnetic tunnel and a selector; the selector is a two-dimensional material based selector; the magnetic tunnel junction is arranged above or below the selector; the magnetic tunnel junction includes an antiferromagnetic layer and a free layer; the free layer is adjacent to the antiferromagnetic layer; when the selector is turned on, the memory cell is conducted, a current generates a spin current which is injected into the free layer, and a magnetization direction of the free layer is switched by the exchange bias effect between the free layer and the antiferromagnetic layer. A deterministic magnetization switching of SOT-MRAM memory cell under zero magnetic field at room temperature may be implemented without an external magnetic field by using the exchange bias effect and applying an optimized bias voltage of the magnetic tunnel junction, so as to achieve a purpose of data writing and implement SOT-MRAM memory cell with double terminal structure.