A substrate that includes a core layer comprising a first surface and a second surface, a plurality of core interconnects located in the core layer, a high-density interconnect portion located in the core layer, a first dielectric layer coupled to the first surface of the core layer, a first plurality of interconnects located in the first dielectric layer, a second dielectric layer coupled to the second surface of the core layer, and a second plurality of interconnects located in the second dielectric layer. The high-density interconnect portion includes a first redistribution dielectric layer and a first plurality of high-density interconnects located in the first redistribution dielectric layer. The high-density interconnect portion may provide high-density interconnects.

An antenna comprising; a substrate; a continuous film of yttrium barium copper oxide (YBCO) disposed on the substrate having first and second regions, wherein the first region has a first oxygen doping level and wherein the second region has a second oxygen doping level that is different from the first oxygen doping level; a nano-scale conductive structure, shaped to resonate at a terahertz (THz) frequency, disposed on a boundary between the first and second regions; and a conductive path electrically connected to the first and second regions and to the conductive structure such that induced current in the structure due to incoming THz radiation heats the boundary thereby creating a thermal gradient, which results in the generation of Seebeck effect voltage.

It is an object to provide a method for producing a substrate for epitaxial growth having a higher degree of biaxial crystal orientation without forming an irregular part a3. The method for producing a substrate for epitaxial growth comprising a step of laminating a metal base material and a copper layer having an fcc rolling texture by surface-activated bonding, a step of applying mechanical polishing to the copper layer, and a step of carrying out orientation heat treatment of the copper layer, wherein the copper layer is laminated in such a way that, when ratios of the (200) plane of the copper layer before laminated and of the copper layer after laminated when measured by XRD are I0.sub.Cu and I0.sub.CLAD, respectively and ratios of the (220) plane of the copper layer before laminated and of the copper layer after laminated are I2.sub.Cu and I2.sub.CLAD, respectively, I0.sub.Cu<20%, I2.sub.Cu=70 to 90%, and I0.sub.CLAD<20%, I2.sub.CLAD=70 to 90% and I0.sub.CLAD−I0.sub.Cu<13%.

It is an object to provide a substrate for epitaxial growth having a metal base material laminated with a copper layer. On a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 μm from the surface can be less than 1.5%. A surface roughness along a same direction as a rolling direction per unit length of 60 μm when measured by AFM can be Ra1<10 nm.

A superconducting wire includes a substrate and a superconducting material layer. The substrate includes a first main surface and a second main surface opposite to the first main surface. The superconducting material layer is disposed on the first main surface. Along at least a part of the superconducting wire in a direction in which the superconducting wire extends, the superconducting material layer is disposed to cover a side surface of the substrate in a width direction of the substrate and cover at least a part of the second main surface. A thickness of the superconducting material layer located on the first main surface varies along the width direction. A maximum thickness of the superconducting material layer located on the second main surface is smaller than a maximum thickness of the superconducting material layer located on the first main surface.

An antenna comprising; a substrate; a continuous film of yttrium barium copper oxide (YBCO) disposed on the substrate having first and second regions, wherein the first region has a first oxygen doping level and wherein the second region has a second oxygen doping level that is different from the first oxygen doping level; a nano-scale conductive structure, shaped to resonate at a terahertz (THz) frequency, disposed on a boundary between the first and second regions; and a conductive path electrically connected to the first and second regions and to the conductive structure such that induced current in the structure due to incoming THz radiation heats the boundary thereby creating a thermal gradient, which results in the generation of Seebeck effect voltage.

This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire exhibits the crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher, a Δω of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area of 6% or less.

A superconducting wire rod according to an aspect of the present disclosure is a superconducting wire rod having a flat cross-sectional shape which is characterized in that a voltage is generated with a lower current density or a higher voltage is generated with the same current density in a region on at least one end side in a wire rod width direction as compared with a region other than the region on the at least one end side.

According to various implementations of the invention, high quality a-axis XBCO may be grown with low surface roughness. According to various implementations of the invention, low surface roughness may be obtained by: 1) adequate substrate preparation; 2) calibration of flux rates for constituent atoms; and/or 3) appropriate control of temperature during crystal growth. According to various implementations of the invention, a wafer comprises a smoothing layer of c-axis XBCO; a first conducting layer of a-axis XBCO formed on the smoothing layer; an insulating layer formed on the first conducting layer; and a second conducting layer of a-axis XBCO formed on the insulating layer, where, for a same surface roughness, a thickness of the smoothing layer and the first conducting layer combined is greater than a thickness of the first conducting layer without the smoothing layer.

A substrate that includes a core layer comprising a first surface and a second surface, a plurality of core interconnects located in the core layer, a high-density interconnect portion located in the core layer, a first dielectric layer coupled to the first surface of the core layer, a first plurality of interconnects located in the first dielectric layer, a second dielectric layer coupled to the second surface of the core layer, and a second plurality of interconnects located in the second dielectric layer. The high-density interconnect portion includes a first redistribution dielectric layer and a first plurality of high-density interconnects located in the first redistribution dielectric layer. The high-density interconnect portion may provide high-density interconnects.