A quantum device capable of preventing contacts from being displaced is provided. A quantum device includes a quantum element in which a quantum circuit is provided, a socket including contacts and a housing, the contacts being in contact with a terminal of the quantum element, and the housing supporting the contacts, and a board including a board substrate. At least one of the housing and the board substrate includes a hole, another one of the housing and the board substrate includes a fixing part disposed inside the hole and a body part other than the fixing part, and the fixing part and the body part are integrally formed.

According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

A high-temperature superconducting qubit implements a quantum mechanical two-level system. The high-temperature superconducting qubit comprises a first superconductor, a second superconductor, and an overlap region. The first superconductor comprises a first high-temperature superconductor material. The second superconductor comprises a second high-temperature superconductor material. In the overlap region, at least a first section of the first surface and at least a second section of the second surface overlap, the first section and the second section are arranged in parallel at a distance corresponding to a predefined distance, and the first orientation and the second orientation are arranged with an angle corresponding to a predefined angle. The high-temperature superconducting qubit comprises a Josephson junction between the first high-temperature superconductor material and the second high-temperature superconductor material. The Josephson junction provides the quantum mechanical two-level system of the high-temperature superconducting qubit.

An antenna comprising; a substrate; a continuous film of yttrium barium copper oxide (YBCO) disposed on the substrate having first and second regions, wherein the first region has a first oxygen doping level and wherein the second region has a second oxygen doping level that is different from the first oxygen doping level; a nano-scale conductive structure, shaped to resonate at a terahertz (THz) frequency, disposed on a boundary between the first and second regions; and a conductive path electrically connected to the first and second regions and to the conductive structure such that induced current in the structure due to incoming THz radiation heats the boundary thereby creating a thermal gradient, which results in the generation of Seebeck effect voltage.

An electric circuit includes a plurality of superconducting components, each of the plurality of superconducting components having: a respective first terminal; a respective second terminal; and a respective input. The electric circuit further includes a bias current source electrically-connected to the respective first terminal of each of the plurality of superconducting components. The bias current source is configured to provide a bias current adapted to cause the electric circuit to function as a logical OR gate on the respective inputs of the plurality of superconducting components. The electric circuit further includes an output node adapted to output a state of the logical OR gate.

An antenna comprising; a substrate; a continuous film of yttrium barium copper oxide (YBCO) disposed on the substrate having first and second regions, wherein the first region has a first oxygen doping level and wherein the second region has a second oxygen doping level that is different from the first oxygen doping level; a nano-scale conductive structure, shaped to resonate at a terahertz (THz) frequency, disposed on a boundary between the first and second regions; and a conductive path electrically connected to the first and second regions and to the conductive structure such that induced current in the structure due to incoming THz radiation heats the boundary thereby creating a thermal gradient, which results in the generation of Seebeck effect voltage.

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

According to various implementations of the invention, high quality a-axis XBCO may be grown with low surface roughness. According to various implementations of the invention, low surface roughness may be obtained by: 1) adequate substrate preparation; 2) calibration of flux rates for constituent atoms; and/or 3) appropriate control of temperature during crystal growth. According to various implementions of the invention, a wafer comprises a smoothing layer of c-axis XBCO; a first conducting layer of a-axis XBCO formed on the smoothing layer; an insulating layer formed on the first conducting layer; and a second conducting layer of a-axis XBCO formed on the insulating layer, where, for a same surface roughness, a thickness of the smoothing layer and the first conducting layer combined is greater than a thickness of the first conducting layer without the smoothing layer. According to various implementations of the invention, a Josephson Junction is etched out of the XBCO/insulating layer/XBCO trilayer by: ion mill etching the top XBCO layer and some of the insulating layer to intentionally leave some of the insulating layer on the bottom XBCO layer; and/or ion mill etching at least the insulating layer at an off angle to reduce or minimize ion damage to the bottom XBCO layer otherwise introduced by the ion mill.

According to various implementations of the invention, high quality a-axis XBCO may be grown with low surface roughness. According to various implementations of the invention, low surface roughness may be obtained by: 1) adequate substrate preparation; 2) calibration of flux rates for constituent atoms; and/or 3) appropriate control of temperature during crystal growth. According to various implementations of the invention, a wafer comprises a smoothing layer of c-axis XBCO; a first conducting layer of a-axis XBCO formed on the smoothing layer; an insulating layer formed on the first conducting layer; and a second conducting layer of a-axis XBCO formed on the insulating layer, where, for a same surface roughness, a thickness of the smoothing layer and the first conducting layer combined is greater than a thickness of the first conducting layer without the smoothing layer.