A photoconductive switch that uses materials that support negative differential mobility, whose operation leverages the pulse compression of a charge could to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, a method of operating a photoconductive switch, which includes two electrodes and a light absorbing material positioned therebetween, includes selecting a value for one or more parameters comprising a voltage for generation of an electric field, a spot size of a laser pulse, a temporal pulse width of the laser pulse, or an intensity of the laser pulse, wherein the selected value(s) for the one or more parameters enable the switch to operate in a region where the light absorbing material exhibits negative differential mobility, and illuminating the light absorbing material with the laser pulse to generate a charge cloud within the light absorbing material.

A photoconductive switch that uses materials that support negative differential mobility, whose operation leverages the pulse compression of a charge could to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, a method of operating a photoconductive switch, which includes two electrodes and a light absorbing material positioned therebetween, includes selecting a value for one or more parameters comprising a voltage for generation of an electric field, a spot size of a laser pulse, a temporal pulse width of the laser pulse, or an intensity of the laser pulse, wherein the selected value(s) for the one or more parameters enable the switch to operate in a region where the light absorbing material exhibits negative differential mobility, and illuminating the light absorbing material with the laser pulse to generate a charge cloud within the light absorbing material.

The invention relates to a Gunn diode comprising a first contact layer (110); a second contact layer (120); an active layer (130) based on a gallium nitride (GaN)-based semiconductor material, said active layer being formed between the first contact layer (110) and the second contact layer (120); a substrate (140) on which the active layer (130) is formed together with the first contact layer (110) and the second contact layer (120); and an optical inlet (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (130) by means of laser irradiation.

The invention relates to a Gunn diode comprising a first contact layer (110); a second contact layer (120); an active layer (130) based on a gallium nitride (GaN)-based semiconductor material, said active layer being formed between the first contact layer (110) and the second contact layer (120); a substrate (140) on which the active layer (130) is formed together with the first contact layer (110) and the second contact layer (120); and an optical inlet (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (130) by means of laser irradiation.

A rectifier is provided for converting an oscillating electromagnetic field into a direct current and comprises an electrically conductive antenna layer configured to absorb electromagnetic radiation, an electrically conductive mirror layer configured to provide an electromagnetic mirror charge of the antenna layer, an electrically insulating tunnel barrier layer positioned between the antenna layer and the mirror layer, and an electronic circuit electrically connected between the conductive mirror layer and the conductive antenna layer. The rectifier employs a metamaterial configuration for room temperature rectification of radiation in regions of the electromagnetic spectrum comprising the MWIR and LWIR regions. Methods for use of the rectifier in rectifying and detecting radiation are described.

A rectifier is provided for converting an oscillating electromagnetic field into a direct current and comprises an electrically conductive antenna layer configured to absorb electromagnetic radiation, an electrically conductive mirror layer configured to provide an electromagnetic mirror charge of the antenna layer, an electrically insulating tunnel barrier layer positioned between the antenna layer and the mirror layer, and an electronic circuit electrically connected between the conductive mirror layer and the conductive antenna layer. The rectifier employs a metamaterial configuration for room temperature rectification of radiation in regions of the electromagnetic spectrum comprising the MWIR and LWIR regions. Methods for use of the rectifier in rectifying and detecting radiation are described.