Examples described in this disclosure relate to gating a semiconductor layer into a quantum spin Hall insulator state, Certain examples further relate to using quantum spin Hall insulators as topological quantum qubits. Quantum spin Hall systems may rely upon the quantum spin Hall effect by causing a state of a matter to change from a certain phase to an inverted bandgap phase. In one example, the present disclosure relates to a device including a semiconductor layer comprising an active material. The device further includes a gate coupled to the semiconductor layer, where the semiconductor layer is operable in a quantum spin Hall insulator state by using electrons and holes from the active material in response to an application of an electric field to the semiconductor layer via the gate.

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may be doped using dopant species derived from one or more precursors utilized to fabricate nearby structures such as, for example, a conductive substrate or a conductive overlay.

Provided is an electronic device including a semiconductor substrate, a single-crystal first transition metal oxide layer on the semiconductor substrate, and a single-crystal second transition metal oxide layer spaced apart from the semiconductor substrate with the single-crystal first transition metal oxide layer interposed therebetween. The first transition metal oxide layer and the second transition metal oxide layer are in contact with each other. The semiconductor substrate, the first transition metal oxide layer, and the second transition metal oxide layer include different materials from each other. The first transition metal oxide layer and the second transition metal oxide layer have the same crystal direction.

A resistive memory device is provided. The resistive memory device comprises a first metal oxide layer above a body electrode. A correlated electron layer located between a source and a drain and above the first metal oxide layer. A gate above a bottom portion of the correlated electron layer.

A resistive memory device is provided. The resistive memory device comprises a first metal oxide layer above a body electrode. A correlated electron layer located between a source and a drain and above the first metal oxide layer. A gate above a bottom portion of the correlated electron layer.

Topological insulators can be utilized in a new type of infrared photodetector that is intrinsically sensitive to the polarization of incident light and static magnetic fields. The detector isolates single topological insulator surfaces and allows light collection and exposure to static magnetic fields. The wavelength range of interest is between 750 nm and about 100 microns. This detector eliminates the need for external polarization selective optics. Polarization sensitive infrared photodetectors are useful for optoelectronics applications, such as light detection in environments with low visibility in the visible wavelength regime.

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

An electronic device includes a substrate, a channel portion, a first electrode, a second electrode, and a shape change generation portion. The channel portion is provided above the substrate and includes a phase transition material that undergoes a phase transition between a metal phase and an insulator phase owing to shape change. The first electrode is provided above the channel portion and electrically connected to a part of an upper surface of the channel portion. The second electrode is provided above the channel portion and electrically connected to another part of the upper surface of the channel portion. The shape change generation portion is configured to force the channel portion to cause shape change.

Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.

A composition of matter consisting primarily of a stabilizing element and a transition metal oxide, wherein the transition metal oxide is an anti-ferromagnetic Mott insulator with strong spin orbit interactions, and the composition of matter has a canted crystal structure.