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GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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TECHNICAL SUBJECTS COVERED BY FORMER USPC
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TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Active solid-state devices, e.g. transistors, solid-state diodes
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Folded bit line dram configuration
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Y10S257/907

Method of forming semiconductor device including protrusion type isolation layer
09741611 · 2017-08-22 · ·

A semiconductor device may include a semiconductor layer having a convex portion and a concave portion surrounding the convex portion. The semiconductor device may further include a protrusion type isolation layer filling the concave portion and extending upward so that an uppermost surface of the isolation layer is a at level higher that an uppermost surface of the convex portion.