Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.

A light-emitting device can include a conductive support structure comprising a metal; a GaN-based semiconductor structure disposed on the conductive support structure, the GaN-based semiconductor structure including a p-type GaN-based layer, a GaN-based active layer and an n-type GaN-based layer, in which the GaN-based semiconductor structure has a first surface, a side surface and a second surface, in which the first surface, relative to the second surface, is proximate to the conductive support structure, in which the second surface is opposite to the first surface, in which the conductive support structure is thicker than the p-type GaN-based semiconductor layer, and the conductive support structure is thicker than the n-type GaN-based semiconductor layer; a p-type electrode disposed on the conductive support structure; an n-type electrode disposed on the second surface of the GaN-based semiconductor structure; and a passivation layer disposed on the side surface and the second surface of the GaN-based semiconductor structure.

A light-emitting device can include a conductive support structure comprising a metal; a GaN-based semiconductor structure disposed on the conductive support structure, the GaN-based semiconductor structure including a p-type GaN-based layer, a GaN-based active layer and an n-type GaN-based layer, in which the GaN-based semiconductor structure has a first surface, a side surface and a second surface, in which the first surface, relative to the second surface, is proximate to the conductive support structure, in which the second surface is opposite to the first surface, in which the conductive support structure is thicker than the p-type GaN-based semiconductor layer, and the conductive support structure is thicker than the n-type GaN-based semiconductor layer; a p-type electrode disposed on the conductive support structure; an n-type electrode disposed on the second surface of the GaN-based semiconductor structure; and a passivation layer disposed on the side surface and the second surface of the GaN-based semiconductor structure.

A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surface of the GaN-based semiconductor structure and on an entire side surface of the GaN-based semiconductor structure, in which a first part formed on the upper surface of the GaN-based semiconductor structure in the insulating layer contacts the upper surface of the GaN-based semiconductor structure and a side surface of the n-type electrode, and a second part formed on the entire side surface of the GaN-based semiconductor structure in the insulating layer does not contact the n-type electrode.

A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.

A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.

A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surface of the GaN-based semiconductor structure and on an entire side surface of the GaN-based semiconductor structure, in which a first part formed on the upper surface of the GaN-based semiconductor structure in the insulating layer contacts the upper surface of the GaN-based semiconductor structure and a side surface of the n-type electrode, and a second part formed on the entire side surface of the GaN-based semiconductor structure in the insulating layer does not contact the n-type electrode.

A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor structure including a p-type GaN-based semiconductor layer, an active layer on the p-type GaN-based semiconductor layer, and an n-type GaN-based semiconductor layer on the active layer; a p-type electrode on the metal support layer and including a plurality of metal layers; an n-type electrode on a flat portion of an upper surface of the GaN-based semiconductor structure, and the n-type electrode contacts the flat portion; a metal pad layer on the n-type electrode; and an insulating layer including a first part disposed on the upper surface of the GaN-based semiconductor structure, and a second part disposed on an entire side surface of the GaN-based semiconductor structure, in which the metal pad layer includes a first portion having a flat bottom surface on the n-type electrode, and a second portion having stepped surfaces.

A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor structure including a p-type GaN-based semiconductor layer, an active layer on the p-type GaN-based semiconductor layer, and an n-type GaN-based semiconductor layer on the active layer; a p-type electrode on the metal support layer and including a plurality of metal layers; an n-type electrode on a flat portion of an upper surface of the GaN-based semiconductor structure, and the n-type electrode contacts the flat portion; a metal pad layer on the n-type electrode; and an insulating layer including a first part disposed on the upper surface of the GaN-based semiconductor structure, and a second part disposed on an entire side surface of the GaN-based semiconductor structure, in which the metal pad layer includes a first portion having a flat bottom surface on the n-type electrode, and a second portion having stepped surfaces.

A vertical light emitting diode structure, comprising: a support structure including a support substrate and a metallic layer, the metallic layer being disposed on the support substrate; a GaN-based semiconductor structure including a first-type semiconductor layer on the support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure including a bottom surface proximate to the support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, a thickness of the GaN-based semiconductor structure from the bottom surface to the top surface being less than 5 micro meters, and a ratio of a thickness of the second-type semiconductor layer to the thickness of the GaN-based semiconductor structure being not less than 60%; a first contact layer disposed between the support structure and the GaN-based semiconductor structure to be electrically connected to the first-type semiconductor layer, a thickness of the first contact layer being less than the thickness of the first-type semiconductor layer; a second contact layer disposed on the GaN-based semiconductor structure to be electrically connected to the second-type semiconductor layer, the second contact layer including titanium and aluminum; a metal pad disposed on the second contact layer, the metal pad including gold; and a passivation layer being in contact with the support structure, the passivation layer extending from the support structure to the top surface of the GaN-based semiconductor structure via the side surface of the GaN-based semiconductor structure.