A localized gap plasmon resonator includes: a pad including: a first plasmonic material to support a surface plasmon; and a first plasmon surface; a nanoelectromechanical (NEM) member disposed opposing the first plasmon surface of the pad and spaced apart from the pad by a plasmon gap, the plasmon gap supporting a plasmon resonance; and a plasmonic nanoprism disposed on the NEM member and including: a second plasmonic material to support a surface plasmon; and a second plasmon surface, such that: the second plasmon surface of the plasmonic nanoprism opposes the first plasmon surface of the pad; and the pad, the plasmonic nanoprism, and the plasmon gap support a localized gap plasmon (LGP) mode.

A localized gap plasmon resonator includes: a pad including: a first plasmonic material to support a surface plasmon; and a first plasmon surface; a nanoelectromechanical (NEM) member disposed opposing the first plasmon surface of the pad and spaced apart from the pad by a plasmon gap, the plasmon gap supporting a plasmon resonance; and a plasmonic nanoprism disposed on the NEM member and including: a second plasmonic material to support a surface plasmon; and a second plasmon surface, such that: the second plasmon surface of the plasmonic nanoprism opposes the first plasmon surface of the pad; and the pad, the plasmonic nanoprism, and the plasmon gap support a localized gap plasmon (LGP) mode.

Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.

Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.