The present invention provides nanostructures for use in proliferation and differentiation of neural stem cells. The present invention also provides method of proliferating and differentiating neural stem cells.

A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180.

A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180.

A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180. Also, a metal nanowire according to another embodiment of the invention includes at least two wire portions. The metal nanowire includes an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion. A diameter of the n-th wire portion is different from a diameter of the (n+1)-th wire portion. In addition, a core-shell nanowire according to yet another embodiment includes a nanowire core; and a metal-compound shell formed on the nanowire core. A method of manufacturing a metal nanowire according to an embodiment includes preparing a reaction mixture and synthesizing a nanowire. In the preparing the reaction mixture, a metal salt, a reducing solvent for reducing the metal salt to a melt, a capping agent for growing the metal into a shape of a wire, and a catalyst are mixed. In the synthesizing the nanowire, the mixture is added to a reaction container and is reacted in the reaction container at 1 to 5 atm. Then, the nanowire including at least two wire portions and having a bent portion is manufactured. Also, a method of manufacturing a metal nanowire according to another embodiment includes preparing a reaction mixture and synthesizing a nanowire. In the preparing the reaction mixture, a metal salt, a reducing solvent for reducing the metal salt to a melt, a capping agent for growing the metal into a shape of a wire, and a catalyst are mixed. In the synthesizing the nanowire, the mixture is added to a reaction container and is reacted in the reaction container at 1 to 5 atm. Then, the nanowire having different diameters is manufactured. In addition, a method of manufacturing a metal nanowire according to yet another embodiment preparing a nanowire core on a substrate; contacting the nanowire core with a precursor solution for forming a metal-compound shell; and forming a metal-compound shell on the nanowire core by supplying growth energy. A transparent electrode according to an embodiment includes a conductor layer including a metal nanowire; and a transparent electrode layer formed on the conductor layer. The metal nanowire includes at least one bent portion. An angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180. Also, a transparent electrode according to another embodiment includes a conductor layer including a metal nanowire; and a transparent e

The present invention provides nanostructures for use in proliferation and differentiation of neural stem cells. The present invention also provides method of proliferating and differentiating neural stem cells.

A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180.

A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180.

A nanowire according to an embodiment of the invention comprises a nanowire core and a metal-compound coated on the nanowire core, wherein the nanowire core comprises at least two bent portions, and wherein an angle () between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<<180.

Disclosed are a nanowire bundle array performing optical haze control for enhancing optical characteristics of optoelectronic device systems and optical systems, an ultrahigh-performance broadband optical film, and a method of manufacturing the same.

Disclosed are a nanowire bundle array performing optical haze control for enhancing optical characteristics of optoelectronic device systems and optical systems, an ultrahigh-performance broadband optical film, and a method of manufacturing the same.