Memory cells having a first dielectric between a charge storage material and a semiconductor, conductive nanodots between the charge storage material and a control gate, and a second dielectric between the control gate and the conductive nanodots.

An e-type iron-based oxide magnetic particle powder has narrow particle size distribution and has a low content of fine particles which do not contribute to magnetic recording characteristics. As a result, a narrow coercive force distribution is achieved and the powder is suitable for increasing recording density of a magnetic recording medium. The powder containing substituting metal elements can be obtained by: adding an alkali to an aqueous solution containing trivalent iron ions and ions of the metals for partially substituting Fe sites to neutralize the aqueous solution to a pH of 1.5 to 2.5; then adding a hydroxycarboxylic acid; further adding the alkali to neutralize the aqueous solution to a pH of 8.0 to 9.0; washing with water a precipitation of an iron oxyhydroxide containing the substituting metal elements produced; and coating the iron oxyhydroxide containing the substituting metal elements with a silicon oxide and heating the resultant.

Ultrathin plasmene nanosheets are demonstrated as a new class of flexible surface enhanced Raman scattering (SERS) substrate capable of conformal attachment and sensitive and reproducible detection of chemicals on topologically complex surfaces. Engineering building block morphologies allows for fine-tuning of the SERS performance. In a preferred application the plasmene nanosheets are demonstrated as the next generation plasmonic and/or SERS coded labels, such as for example, anti-counterfeit security label for banknotes. Engineering the morphologies of plasmene-constituent nanoparticles and varying of SERS molecular labels offer virtually unlimited coding capacities.

An optically variable device uses a data storage layer with a nano-optical bit system to store data. The optically variable device encodes the data using spectral signatures (such as colors) as variables. In some embodiments, the optically variable device uses angle multiplexing to store machine-readable data and an image. The optically variable device can be used as a secure data storage medium for a large volume of data. The storage capacity can be increased by increasing the number of color variables and by introducing additional variables such as intensity and polarization.

Various techniques and apparatus permit fabrication of superconductive circuits and structures, for instance Josephson junctions, which may, for example be useful in quantum computers. For instance, a low magnetic flux noise trilayer structure may be fabricated having a dielectric structure or layer interposed between two elements or layers capable of superconducting. A superconducting via may directly overlie a Josephson junction. A structure, for instance a Josephson junction, may be carried on a planarized dielectric layer. A fin may be employed to remove heat from the structure. A via capable of superconducting may have a width that is less than about 1 micrometer. The structure may be coupled to a resistor, for example by vias and/or a strap connector.

Memory cells having a first dielectric between a charge storage material and a semiconductor, conductive nanodots between the charge storage material and a control gate, and a second dielectric between the control gate and the conductive nanodots.

The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.

Memory cells having a plurality of electrically conductive nanodots between a charge storage material and a dielectric, and apparatus having such memory cells, may facilitate non-volatile storage of data. The electrically conductive nanodots may be in contact with a surface of either the charge storage material, or a barrier material between the electrically conductive nanodots and the charge storage material.

Various techniques and apparatus permit fabrication of superconductive circuits and structures, for instance Josephson junctions, which may, for example be useful in quantum computers. For instance, a low magnetic flux noise trilayer structure may be fabricated having a dielectric structure or layer interposed between two elements or layers capable of superconducting. A superconducting via may directly overlie a Josephson junction. A structure, for instance a Josephson junction, may be carried on a planarized dielectric layer. A fin may be employed to remove heat from the structure. A via capable of superconducting may have a width that is less than about 1 micrometer. The structure may be coupled to a resistor, for example by vias and/or a strap connector.