A method of synthesis of two-dimensional (2D) nanoflakes comprises the cutting of prefabricated nanoparticles. The method allows high control over the shape, size and composition of the 2D nanoflakes, and can be used to produce material with uniform properties in large quantities. Van der Waals heterostructure devices are prepared by fabricating nanoparticles, chemically cutting the nanoparticles to form nanoflakes, dispersing the nanoflakes in a solvent to form an ink, and depositing the ink to form a thin film.

A digital quantum dot radiographic detection system described herein includes: a scintillation subsystem 202 and a semiconductor light detection subsystem 200, 200′ (including a plurality of quantum dot image sensors 200a, 200b). In a first preferred digital quantum dot radiographic detection system, the plurality of quantum dot image sensors 200 is in substantially direct contact with the scintillation subsystem 202. In a second preferred digital quantum dot radiographic detection system, the scintillation subsystem has a plurality of discrete scintillation packets 212a, 212b, at least one of the discrete scintillation packets communicating with at least one of the quantum dot image sensors. The quantum dot image sensors 200 may be associated with semiconductor substrate 210 made from materials such as silicon (and variations thereof) or graphene.

A digital quantum dot radiographic detection system described herein includes: a scintillation subsystem 202 and a semiconductor light detection subsystem 200, 200′ (including a plurality of quantum dot image sensors 200a, 200b). In a first preferred digital quantum dot radiographic detection system, the plurality of quantum dot image sensors 200 is in substantially direct contact with the scintillation subsystem 202. In a second preferred digital quantum dot radiographic detection system, the scintillation subsystem has a plurality of discrete scintillation packets 212a, 212b, at least one of the discrete scintillation packets communicating with at least one of the quantum dot image sensors. The quantum dot image sensors 200 may be associated with semiconductor substrate 210 made from materials such as silicon (and variations thereof) or graphene. An optically opaque layer 220 is preferably positioned between the discrete scintillation packets, 212a, 212b.

Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.

A silicon-based quantum dot device (1) is disclosed. The device comprises a substrate (8) and a layer (7) of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (5.sub.1, 5.sub.2: FIG. 5). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.

An apparatus for performing a sensing application may a substrate having a plurality of nano-fingers positioned to receive the dispensed solution , first and second reservoirs, first and second dispensers to dispense first and second solutions from the first and second reservoirs onto first and second subsets of the plurality of nano-fingers. The plurality of nano-fingers are flexible, such that the plurality of nano-fingers are configurable with respect to each other. The apparatus may include an illumination source to illuminate the first and second solutions and an analyte introduced around the plurality of nano-fingers, wherein light is to be emitted from the analyte in response to being illuminated. The apparatus may include a detector to detect the light emitted from the analyte.

The discrimination ability of a chemical sensing cross-reactive arrays is enhanced by constructing sensing elements in two dimensions, first in the x-y plane of the substrate, second in the z dimension so that the sensors are vertically stacked on top of one another. Stacking sensing elements on top of one another adds to the discrimination ability by enabling the characteristic measurement of how fast target chemicals are passing through the stack of sensors. The new invention also allows the ability to discriminate components in a sample mixture by separating them using their innate difference in diffusional rates. Multi-sensor response patterns at each z level of sensors and time delay information from the sample passing from one level to the next are used to generate the response vector. The response vector is used to identify individual component samples and components in a mixture sample.

An object of the present invention is to provide a method for accurately forming an antenna substrate as well as an antenna substrate with wiring line and electrode by a coating method. One aspect of the present invention provides a method for producing an antenna substrate with wiring line and electrode including the steps of: (1) forming a coating film using a photosensitive paste containing a conductive material and a photosensitive organic component on an insulating substrate; (2-A) processing the coating film into a pattern corresponding to an antenna by photolithography; (2-B) processing the coating film into a pattern corresponding to a wiring line; (2-C) processing the coating film into a pattern corresponding to an electrode; (3-A) curing the pattern corresponding to an antenna into an antenna; (3-B) curing the pattern corresponding to a wiring line into a wiring line; and (3-C) curing the pattern corresponding to an electrode into an electrode.

In various embodiments the present disclosure provides a core/shell nanocrystal comprising a core and a shell formed on the core, wherein the core/shell nanocrystal is co-doped with at least one metal dopant and at least one trivalent cation. In some embodiments, the trivalent cation is a Group 13 element. Methods of making and using the core/shell nanocrystal are also described.

A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.