A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

An apparatus for bonding semiconductor chips may comprise transfer rails configured to transfer substrates, loading members configured to load the substrates onto the transfer rails, unloading members configured to unload the substrates from the transfer rails, a first wafer supply unit configured to supply a first wafer including semiconductor chips, and/or a bonding unit configured to bond the semiconductor chips to the substrates. An apparatus for bonding semiconductor chips may comprise a transfer rail configured to transfer substrates, loading members configured to load the substrates onto the transfer rail, unloading members configured to unload the substrates from the transfer rail, a buffer member at a side of the transfer rail configured to temporarily receive the substrates loaded by the loading members, a first wafer supply unit configured to supply a first wafer including semiconductor chips, and/or a bonding unit configured to bond the semiconductor chips to the substrates.

A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

An automated edge band application machine has a board drive assembly and an opposed caster wheel that together capture and move a work piece edge into engagement with a rotating roller banding guide with edge banding captured between. An adhesive affixes the edge banding to the work piece responsive thereto. An edging detector is located along the path of the work piece edge, in a position in advance of the board drive assembly, and is configured to detect a presence of edge band on the edge of the work piece. When the edging detector detects edging, or at a precise distance along the edge band thereafter, a cutting die assembly severs the edge band. The board drive assembly automatically adjusts to varying thickness work pieces, engages with a work piece major surface, and rotates in synchrony with a drive spindle assembly and the rotating roller banding guide.

A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

An apparatus for bonding semiconductor chips may comprise transfer rails configured to transfer substrates, loading members configured to load the substrates onto the transfer rails, unloading members configured to unload the substrates from the transfer rails, a first wafer supply unit configured to supply a first wafer including semiconductor chips, and/or a bonding unit configured to bond the semiconductor chips to the substrates. An apparatus for bonding semiconductor chips may comprise a transfer rail configured to transfer substrates, loading members configured to load the substrates onto the transfer rail, unloading members configured to unload the substrates from the transfer rail, a buffer member at a side of the transfer rail configured to temporarily receive the substrates loaded by the loading members, a first wafer supply unit configured to supply a first wafer including semiconductor chips, and/or a bonding unit configured to bond the semiconductor chips to the substrates.

A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

An apparatus for bonding semiconductor chips may comprise transfer rails configured to transfer substrates, loading members configured to load the substrates onto the transfer rails, unloading members configured to unload the substrates from the transfer rails, a first wafer supply unit configured to supply a first wafer including semiconductor chips, and/or a bonding unit configured to bond the semiconductor chips to the substrates. An apparatus for bonding semiconductor chips may comprise a transfer rail configured to transfer substrates, loading members configured to load the substrates onto the transfer rail, unloading members configured to unload the substrates from the transfer rail, a buffer member at a side of the transfer rail configured to temporarily receive the substrates loaded by the loading members, a first wafer supply unit configured to supply a first wafer including semiconductor chips, and/or a bonding unit configured to bond the semiconductor chips to the substrates.