Patent classifications
Y10T225/304
Glass bottle cutter based on electric heating
A glass bottle cutter based on electric heating comprises a base. A rotary bracket and a heating and cutting seat are disposed at two ends of an upper surface of the base respectively. A motor is disposed in the rotary bracket, and a rotating shaft of the motor is disposed outside the rotary bracket and is provided with a support plate. An adhesive pad allowing the bottom of a glass bottle to cling thereto is disposed on a surface of the support plate. A heating tube is disposed on an upper surface of the heating and cutting seat. The base is provided with a power access port and an internal circuit mainboard. The motor, the heating tube and the power access port are all electrically connected to the circuit mainboard.
Method of Cutting Brittle Material, Device for Cutting Brittle Material, Method of Manufacturing Cut Brittle Material and Cut Brittle Material
Provided are a method of full body cutting a brittle material without via the bend-breaking step, an apparatus of cutting a brittle material, a method of manufacturing a brittle material, and a cut brittle material. A method of cutting a brittle material, the method comprising: a conveyance cutting step of converging and irradiating an infrared ray to the brittle material linearly along a line using an infrared line heater while moving the infrared line heater relative to the brittle material in a direction along the line, thereby cutting the brittle material along the line.
COMBINED WAFER PRODUCTION METHOD WITH A RECEIVING LAYER HAVING HOLES
The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body (2) for separating at least one solid body layer (4), fixing the receiving layer (10) for holding the solid layer (4) to the solid body (2), said receiving layer having a plurality of holes for guiding a fluid and is fixed by means of a connecting layer to the solid body and the receiving layer (10) is subjected to thermal stress, in particular, mechanical stress, for generating voltages in the solid body (2), wherein a crack in the solid body (2) along a separation plane (8) expands due to the voltages, the solid layer (4) being separated from the solid body (2) due to the crack.
Glass Bottle Cutter Based on Electric Heating
A glass bottle cutter based on electric heating comprises a base. A rotary bracket and a heating and cutting seat are disposed at two ends of an upper surface of the base respectively A motor is disposed in the rotary bracket, and a rotating shaft of the motor is disposed outside the rotary bracket and is provided with a support plate. An adhesive pad allowing the bottom of a glass bottle to cling thereto is disposed on a surface of the support plate. A heating tube is disposed on an upper surface of the heating and cutting seat. The base is provided with a power access port and an internal circuit mainboard. The motor, the heating tube and the power access port are all electrically connected to the circuit mainboard.
Combined wafer production method with a receiving layer having holes
A method for producing solid layers includes: providing a solid for separating at least one solid layer; fixing an accommodating layer for holding the solid layer on the solid, wherein the accommodating layer has a multiplicity of holes for conducting a liquid, wherein the accommodating layer is fixed on the solid by means of a connecting layer; and thermal loading of the accommodating layer for mechanical generation of stresses in the solid. A crack in the solid propagates along a detachment plane due to the stresses. The solid layer is separated from the solid by means of the crack. The accommodating layer includes at least one polymer material, and the polymer material undergoes a glass transition at a temperature lower than 0 C.
Method for cutting plate-like glass, and cutting device therefor
A full body of a glass sheet (G) is cut by forming an initial crack (6a) on a preset cutting line (5) of the glass sheet (G) that is supported by a support member (2 (8)) from a back surface side of the glass sheet (G), followed by propagating the initial crack (6a) while passing through the glass sheet from a front surface to the back surface thereof due to a stress generated through localized heating along the preset cutting line (5) and cooling of a heated region that is formed through the localized heating, the glass sheet (G) being supported by the support member (2 (8)) from the back surface side through an intermediation of an elastic sheet (E) having low thermal conductivity.
Method of separating a back layer on a singulated semiconductor wafer attached to carrier substrate
A method for forming an electronic device includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces. A layer of material is disposed atop a major surface of the wafer and the layer of material is placed adjacent to first carrier substrate comprising a first adhesive layer. The wafer is singulated through the spaces to form singulation lines. A second carrier substrate comprising a second adhesive layer is placed onto an opposite major surface of the wafer. The method includes moving a mechanical device adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines. In one example, the second adhesive layer has an adhesive strength that is less than that of the first adhesive layer.
METHOD OF SINGULATING SEMICONDUCTOR WAFER HAVING A PLURALITY OF DIE AND A BACK LAYER DISPOSED ALONG A MAJOR SURFACE
A method for forming an electronic device includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces. A layer of material is disposed atop a major surface of the wafer and the layer of material is placed adjacent to first carrier substrate comprising a first adhesive layer. The wafer is singulated through the spaces to form singulation lines. A second carrier substrate comprising a second adhesive layer is placed onto an opposite major surface of the wafer. The method includes moving a mechanical device adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines. In one example, the second adhesive layer has an adhesive strength that is less than that of the first adhesive layer.
Method of cutting brittle material, device for cutting brittle material, method of manufacturing cut brittle material and cut brittle material
Provided are a method of full body cutting a brittle material without via the bend-breaking step, an apparatus of cutting a brittle material, a method of manufacturing a brittle material, and a cut brittle material. A method of cutting a brittle material, the method comprising: a conveyance cutting step of converging and irradiating an infrared ray to the brittle material linearly along a line using an infrared line heater while moving the infrared line heater relative to the brittle material in a direction along the line, thereby cutting the brittle material along the line.
Method of separating a back layer on a singulated semiconductor wafer attached to carrier substrates
A method for forming an electronic device includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces. A layer of material is disposed atop a major surface of the wafer and the layer of material is placed adjacent to first carrier substrate comprising a first adhesive layer. The wafer is singulated through the spaces to form singulation lines. A second carrier substrate comprising a second adhesive layer is placed onto an opposite major surface of the wafer. The method includes moving a mechanical device adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines. In one example, the second adhesive layer has an adhesive strength that is less than that of the first adhesive layer.