The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

Methods of forming a polycrystalline diamond compact for use in an earth-boring tool include forming a body of polycrystalline diamond material including a first material disposed in interstitial spaces between inter-bonded diamond crystals in the body, removing the first material from interstitial spaces in a portion of the body, selecting a second material promoting a higher rate of degradation of the polycrystalline diamond compact than the first material under similar elevated temperature conditions and providing the second material in interstitial spaces in the portion of the body. Methods of drilling include engaging at least one cutter with a formation and wearing a second region of polycrystalline diamond material comprising a second material faster than the first region of polycrystalline diamond material comprising a first material. Polycrystalline diamond compacts and earth-boring tools including such compacts.

There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing abase substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.

Embodiments are directed to laser-based processes for forming features on the surface of a part. The feature may include a geometric element, a color element, and/or a surface finish element. In some cases, the laser-formed features are formed as a pattern of textured features that produce an aesthetic and/or tactile effect on the surface of the part. In some cases, the texture features may be sufficiently small that they may not be discerned by the unaided human eye. Also, in some cases, a multiple laser-based processes are combined to form a single feature or a finished part having a specific aesthetic and/or tactile effect.

To provide a railway wheel which is excellent in corrosion fatigue resistance. The railway wheel according to the present embodiment has a chemical composition consisting of: in mass %, C: 0.65 to 0.80%, Si: 0.10 to 1.0%, Mn: 0.10 to 1.0%, P: not more than 0.030%, S: not more than 0.030%, Cr: 0.05 to 0.20%, Sn: 0.005 to 0.50%, Al: 0.010 to 0.050%, N: 0.0020 to 0.015%, Cu: 0 to 0.20%, Ni: 0 to 0.20%, Mo: 0 to 0.20%, V: 0 to 0.20%, Nb: 0 to 0.030%, and Ti: 0 to 0.030%, with the balance being Fe and impurities. A plate portion has a matrix structure composed of pearlite.

Embodiments are directed to laser-based processes for forming features on the surface of a part. The feature may include a geometric element, a color element, and/or a surface finish element. In some cases, the laser-formed features are formed as a pattern of textured features that produce an aesthetic and/or tactile effect on the surface of the part. In some cases, the texture features may be sufficiently small that they may not be discerned by the unaided human eye. Also, in some cases, a multiple laser-based processes are combined to form a single feature or a finished part having a specific aesthetic and/or tactile effect.

To provide a railway wheel which is excellent in corrosion fatigue resistance. The railway wheel according to the present embodiment has a chemical composition consisting of: in mass %, C: 0.65 to 0.80%, Si: 0.10 to 1.0%, Mn: 0.10 to 1.0%, P: not more than 0.030%, S: not more than 0.030%, Cr: 0.05 to 0.20%, Sn: 0.005 to 0.50%, Al: 0.010 to 0.050%, N: 0.0020 to 0.015%, Cu: 0 to 0.20%, Ni: 0 to 0.20%, Mo: 0 to 0.20%, V: 0 to 0.20%, Nb: 0 to 0.030%, and Ti: 0 to 0.030%, with the balance being Fe and impurities. A plate portion has a matrix structure composed of pearlite.

A tab for sealing an unenveloped mailpiece having a front surface, a rear surface, and at least one unbounded edge separating the front and rear surfaces. The tab includes a flexible film configured to extend from the front surface across the unbounded edge to the rear surface. The flexible film has a periphery region and a substantially continuous inner region. At least one adhesive layer is disposed about at least a portion of a bottom surface of the flexible film configured to adhere to the front and the rear surfaces of the mailpiece. At least one peripheral flaw is disposed within the periphery region and generally aligned with unbounded edge.

There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing a base substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.