The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

Embodiments are directed to laser-based processes for forming features on the surface of a part. The feature may include a geometric element, a color element, and/or a surface finish element. In some cases, the laser-formed features are formed as a pattern of textured features that produce an aesthetic and/or tactile effect on the surface of the part. In some cases, the texture features may be sufficiently small that they may not be discerned by the unaided human eye. Also, in some cases, a multiple laser-based processes are combined to form a single feature or a finished part having a specific aesthetic and/or tactile effect.

Embodiments are directed to laser-based processes for forming features on the surface of a part. The feature may include a geometric element, a color element, and/or a surface finish element. In some cases, the laser-formed features are formed as a pattern of textured features that produce an aesthetic and/or tactile effect on the surface of the part. In some cases, the texture features may be sufficiently small that they may not be discerned by the unaided human eye. Also, in some cases, a multiple laser-based processes are combined to form a single feature or a finished part having a specific aesthetic and/or tactile effect.

A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1?10.sup.11 atoms/cm.sup.2 or less.

Embodiments are directed to laser-based processes for forming features on the surface of a part. The feature may include a geometric element, a color element, and/or a surface finish element. In some cases, the laser-formed features are formed as a pattern of textured features that produce an aesthetic and/or tactile effect on the surface of the part. In some cases, the texture features may be sufficiently small that they may not be discerned by the unaided human eye. Also, in some cases, a multiple laser-based processes are combined to form a single feature or a finished part having a specific aesthetic and/or tactile effect.

An article comprises a multi-directional textile of first reinforcing fiber tows extending in a first direction and second reinforcing fiber tows extending in a second direction. Filaments in the first fiber tows extend past a boundary of the textile and are spread. The tows are embedded in resin.

Disclosed are systems, devices and methodologies for handling wafers in wafer processing operations through use of wafer carriers. In an example situation, a wafer carrier can be configured as a plate to allow bonding of a wafer thereto to provide support for the wafer during some processing operations. Upon completion of such operations, the processed wafer can be separated from the support plate so as to allow further processing. Various devices and methodologies related to such wafer carriers for efficient handling of wafers are disclosed.

A handle wafer which prevents edge cracking during a thinning process and method of using the handle wafer for grinding processes are disclosed. The handle wafer includes a body portion with a bottom surface. A square edge portion is provided about a circumference of the bottom surface.

Disclosed are systems, devices and methodologies for handling wafers in wafer processing operations through use of wafer carriers. In an example situation, a wafer carrier can be configured as a plate to allow bonding of a wafer thereto to provide support for the wafer during some processing operations. Upon completion of such operations, the processed wafer can be separated from the support plate so as to allow further processing. Various devices and methodologies related to such wafer carriers for efficient handling of wafers are disclosed.

A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05 and at most by 0.2 from a central angle of inclination at the site of the center longitudinal axis.