OPTION CODE PROVIDING CIRCUIT AND PROVIDING METHOD THEREOF

Abstract

An option code providing circuit includes a plurality of resistive random access memory cells and a controller. The controller determines whether to provide a control signal to operate a heavy forming operation on the resistive random access memory cells or not. Wherein, the controller performs a read operation on the resistive random access memory cells to determine a bit number of the resistive random memory cell which is heavy formed, and the option code is determined by the bit number of resistive random access memory cell which is heavy formed or a bit number of the resistive random access memory cell which is not heavy formed.

Claims

1. An option code providing circuit, comprising: a plurality of resistive random access memory cells; and a controller, coupled to the resistive random access memory cells, and determining whether to provide a control signal to operate a heavy forming operation on at least one of the resistive random access memory cells or not, wherein, the controller performs a read operation on the resistive random access memory cells to determine a bit number of the heavy formed resistive random memory cell which is heavy foiiiied, and the option code is determined by the bit number of the resistive random access memory cell which is heavy formed or a bit number of at least one un-heavy formed resistive random access memory cell.

2. The option code providing circuit as claimed in claim 1, wherein if the bit number of the at least one heavy formed resistive random access memory cell is odd, the option code is a first logic value, and if the bit number of the at least one heavy formed resistive random access memory cell is even, the option code is a second logic value, wherein the first logic value is different from the second logic value.

3. The option code providing circuit as claimed in claim 1, further comprising: a bit number sensor, coupled to the resistive random access memory cells, reading a plurality stored data of the resistive random access memory cells respectively, and generating the option code according to the stored data.

4. The option code providing circuit as claimed in claim 3, wherein the bit number sensor is a logic circuit, and the logic circuit operates a logic operation on the plurality of stored data to generate the option code.

5. The option code providing circuit as claimed in claim 4, wherein the logic circuit comprises: an XOR gate, having a plurality of input ends respectively receiving the plurality of stored data, and an output end to generate the option code.

6. The option code providing circuit as claimed in claim 3, wherein each of the stored data is obtained according to a resistance of corresponding resistive random access memory cell.

7. The option code providing circuit as claimed in claim 1, further comprising: a plurality of redundancy resistive random access memory cells, coupled to the controller, wherein, the controller disables the resistive random access memory cells and forms at least one of the plurality of redundancy resistive random access memory cells to update the option code.

8. An option code providing method, comprising: determining whether to provide a control signal to operate a heavy forming operation on a plurality of resistive random access memory cells; performing a read operation on the resistive random access memory cells to determine a bit number of the resistive random memory cell which is heavy formed; and generating the option code according to the bit number of the resistive random access memory cell which is heavy formed or a bit number of the resistive random access memory cell which is not heavy formed.

9. The option code providing method according to claim 8, wherein step of generating the option code according to the bit number of the resistive random access memory cell which is heavy formed comprises: if the bit number is odd, the option code is a first logic value, and if the bit number is even, the option code is a second logic value, and the first logic value is different form the second logic value.

10. The option code providing method according to claim 8, wherein step of generating the option code according to the bit number of the resistive random access memory cell which is heavy formed comprises: reading a plurality stored data of the resistive random access memory cells respectively, and generating the option code according to the stored data.

11. The option code providing method according to claim 10, wherein step of generating the option code according to the stored data comprises: operating a logic operation on the plurality of stored data to generate the option code.

12. The option code providing method according to claim 8, further comprising: providing a plurality of redundancy resistive random access memory cells; and disabling the resistive random access memory cells and forming at least one of the plurality of redundancy resistive random access memory cells to update the option code.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

[0012] FIG. 1 illustrates a block diagram of an option code providing circuit according to an embodiment of present disclosure.

[0013] FIG. 2 illustrates a block diagram of the other option code providing circuit according to the other embodiment of present disclosure.

[0014] FIG. 3 illustrates a schematic diagram of the bit number sensor according to an embodiment of present disclosure.

[0015] FIG. 4 illustrates a block diagram of another option code providing circuit according to another embodiment of present disclosure.

[0016] FIG. 5 illustrates a flow chart of step for an option code providing method according to an embodiment of present disclosure.

DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS

[0017] Referring to FIG. 1, FIG. 1 illustrates a block diagram of an option code providing circuit according to an embodiment of present disclosure. The option code providing circuit 100 includes a plurality of resistive random access memory (RRAM) cells 111-11N and a controller 120. The RRAM cells 111-11N are coupled to the controller 120. To provide an option code OPC, the controller 120 performs a read operation on the plurality of RRAM cells 111-11N and measures the cell current. When any RRAM cells 111-11N is heavy formed, the resistance of the heavy formed RRAM cell is reduced to a very small value, and high cell current larger than a pre-set threshold current value will be measured from at least one of the heavy form RRAM cells 111-11N. The option code OPC is then determined by a bit number of the RRAM cells 111-11N which are heavy formed. In detail, if the bit number of the heavy formed RRAM cells is even, i.e. 0, 2, 4, . . . , the option code OPC is a first logic value, and on the contrary, if the bit number of the heavy foil ied RRAM cells is odd, i.e., 1, 3, 5, . . . , the option code OPC is a second logic value. In one embodiment, the first logic value may be logic value “0” and the second logic value may be logic value “1”. Or, in another embodiment, the first logic value may be logic value “1” and the second logic value may be logic value

[0018] In other embodiments, the option code OPC may be determined by a bit number of the RRAM cells 111-11N which are not heavy formed. When any RRAM cells 111-11N is not heavy formed, the resistance of the not heavy formed RRAM cell is kept at a normal value, and a cell current smaller than a second pre-set threshold current value will be measured from at least one of the un-heavy formed RRAM cells 111-11N.

[0019] In the present embodiment, no RRAM cells 111-11N is heavy formed at the beginning and the default bit number of heavy formed RRAM cells is 0. The option code OPC is determined to be the first logic value. To adjust the option code OPC, the controller 120 may transmit a control signal to at least one of the RRAM cells 111-11N to operate a heavy forming operation on the at least one of the RRAM cells 111-11N. If a read operation is operated on the RRAM cells 111-11N, high cell current will be measured from the heavy formed RRAM cells and low cell currents will be measured from the rest RRAM cells which are not heavy formed. The bit number of the heavy formed RRAM cells 111-11N is varied and the option code OPC code is then adjusted. It should be noted here, the heavy forming operation is a one-time strong writing operation and a good data retention characteristic of the option code providing circuit 100 can be obtained.

[0020] For an application example, the default bit number of the RRAM cells which are heavy formed equals to 0 (even), and the option code with logic value “0” (first logic value). To adjust the option code OPC to logic value “1” (second logic value), the controller 120 may perform a heavy forming operation on the RRAM cell 111. After the RRAM cell 111 is heavy formed, the bit number of the heavy formed RRAM cells equals to 1 (odd), and the option code OPC with logic value “1” may be provided.

[0021] Moreover, to adjust the option code OPC to logic value “0” again, the controller 120 may further perform the heavy forming operation on the RRAM cell 112. After both of the RRAM cells 111 and 112 are heavy formed, the bit number of the heavy formed RRAM cells equals to 2 (even), and the option code OPC with logic value “0” may be provided.

[0022] Of course, the option code OPC may be adjusted again by performing the heavy forming operation on one of the RRAM cells 111-11N which are not heavy foimed yet. That is, by using N RRAM cells 111-11N, the option code OPC may be adjusted N times.

[0023] It should be noted, to adjust the option code OPC, the controller 120 may not perform the heavy forming operation on the RRAM cells 111-11N in sequential order. For example, the RRAM cell 112 may be heavy formed before the RRAM cell 111. The heavy forming operations may be respectively performed on the RRAM cells 111-11N in a random order.

[0024] Referring to FIG. 2, FIG. 2 illustrates a block diagram of the other option code providing circuit according to the other embodiment of present disclosure. The option code providing circuit 200 includes a plurality of RRAM cells 211-21N, a controller 220, and a bit number sensor 230. The controller 220 is coupled to the plurality RRAM cells 211-21N, and the RRAM cells 211-21N are coupled to the bit number sensor 230. In this embodiment, the bit number sensor 230 has a plurality of input ends for connecting to bit lines of the RRAM cells 211-21N for reading a plurality stored data of the resistive random access memory cells 211-21N, respectively. The bit number sensor 230 may sense the bit number of the RRAM cells 211-21N which are heavy foiiiied to generate the option code OPC according to the stored data of the resistive random access memory cells 211-21N. In detail, when a RRAM cell (for example, the RRAM cell 211) is heavy fonned, the resistance of the RRAM cell 211 is reduce to a low value. When a read operation is operated on the heavy formed RRAM cell 211, a large current can be obtained, and the stored data in the RRAM cell 211 is transmitted to one of the input ends of the bit number sensor 230. That is, the bit number sensor 230 may sense the bit number of the RRAM cells 211-21N which are heavy formed, and generated the option code OPC accordingly. In one embodiment of present disclosure, the bit number sensor 230 may sense the bit number of the RRAM cells 211-21N which are heavy formed is odd or even to generate the option code OPC.

[0025] In other embodiments, the bit number sensor 230 may sense the bit number of the RRAM cells 211-21N which are not heavy formed, and generate the option code OPC. In another embodiment of the present disclosure, the bit number sensor 230 may sense bit number of the RRAM cells 211-21N which are not heavy formed is odd or even to generate the option code OPC.

[0026] Referring to FIG. 3, FIG. 3 illustrates a schematic diagram of the bit number sensor according to an embodiment of present disclosure. In FIG. 3, the bit number sensor 230 is a logic circuit, and the logic circuit may include a logic gate, and the logic circuit may be an XOR gate 310. The XOR gate 310 has a plurality of input ends for respectively coupling to the RRAM cells 211-21N. The XOR gate 310 may sense an amount of the logic value “1” on the input ends to generate the option code OPC.

[0027] Please be noted here, in another embodiment of present disclosure, the logic circuit may be another different gate, such as an XNOR gate. Or, the XOR gate can be implemented by the XOR gate 230 and an inverter coupled in series. There is no limitation to use XOR gate to implement the logic circuit of the bit number sensor 230.

[0028] Referring to FIG. 4, FIG. 4 illustrates a block diagram of another option code providing circuit according to another embodiment of present disclosure. The option code providing circuit 400 includes a plurality of RRAM cells 411-41N, a plurality of redundancy RRAM cells 431-43N, and a controller 420. The controller 420 is coupled to the RRAM cells 411-41N and the redundancy RRAM cells 431-43N. The controller 420 may enable the RRAM cells 411-41N or the redundancy RRAM cells 431-43N to generate the option code OPC. If the RRAM cells 411-41N are used to provide the option code OPC, the redundancy RRAM cells 431-43N are disabled by the controller 420. On the contrary, if the redundancy RRAM cells 431-43N are used to provide the option code OPC, the RRAM cells 411-41N are disabled by the controller 420.

[0029] In detail, the controller 420 disables the redundancy RRAM cells 431-43N, and enable the RRAM cells 411-41N to provide the option code OPC during a first time period. During the first time period, the controller 420 generate the option code OPC according to a bit number of the heavy formed RRAM cells 411-41N. Furthermore, the controller 420 may provide a control signal to the RRAM cells 411-41N for heavy forming at least one of the RRAM cells 411-41N to adjust the option code OPC. If all of the RRAM cells 411-41N are heavy formed, and the option code OPC need to be further adjusted, the controlled 410 may disable the RRAM cells 411-41N and enable the redundancy RRAM cells 431-43N to generate the option code OPC during a second time period.

[0030] Additional, a number of the RRAM cells 411-41N and a number of the redundancy RRAM cells 431-43N may be same or may be different. And, in physical layout on a chip, the RRAM cells 411-41N and the redundancy RRAM cells 431-43N may be disposed one a same row or column.

[0031] In some embodiments of the disclosure, one or more groups of redundancy RRAM cells 431-43N may be implemented for providing the option code OPC. At most one of the groups of redundancy RRAM cells 431-43N and the group of the RRAM cells 411-41N is enabled, and the other groups are disable by the controller 420.

[0032] Referring to FIG. 5, FIG. 5 illustrates a flow chart of step for an option code providing method according to an embodiment of presented disclosure. In step S510, whether to provide a control signal to operate a heavy forming operation on a plurality of resistive random access memory cells is determined. Then, in step S520, a read operation is perfoii ied on the resistive random access memory cells to determine a bit number of the resistive random memory cell which is heavy formed. Finally, the option code is generated according to the bit number of the resistive random access memory cells which is heavy formed or a bit number of the resistive random access memory cells which is not heavy formed in step S530. Furthermore, the option code can be adjusted by executing the step S510-S530 once more, and an adjusted times of the option code may be determined by a total number of the resistive random access memory cells.

[0033] The details of the steps S510, S520 and S530 have been described in the embodiments mentioned above, and no more description repeated here.

[0034] The option code can be used to enable a specific function or application. Since data retention of the option code can be ensured, the specific function or application can be activated exactly.

[0035] In summary, the present disclosure provides a plurality of RRAM cells to be heavy formed, and the option code can be determined by the bit number which the RRAM cells are heavy formed. The heavy formed RRAM cells can't be recover, and the data retention requirement can be met, the performance of a system using the option code provider of present disclosure can be increased.

[0036] It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.