SEMICONDUCTOR PACKAGE WITH ELECTROMAGNETIC INTERFERENCE SHIELDING

Abstract

A semiconductor package includes a multilayer package substrate including a first layer including a first dielectric and first metal layer including a first metal trace and a second layer including a second dielectric layer. An integrated circuit (IC) die includes bond pads, with a bottom side of the IC die attached to the first metal trace. Metal pillars are through the second dielectric layer connecting to the first metal trace. A third layer on the second layer includes a third dielectric layer on the second layer extending to a bottom side of the semiconductor package, and a second metal layer including second metal traces including inner second metal traces connected to the bond pads and outer second metal traces over the metal pillars, and filled vias providing externally accessible contact pads that connect the second metal traces to a bottom side of the semiconductor package.

Claims

1. A semiconductor package, comprising: a first layer including a first dielectric layer and a first metal layer; an integrated circuit (IC) die including circuitry and bond pads connected to the circuitry on a first side of the IC die, a second side of the IC opposite the first side attached to the first metal layer; a second layer with a second dielectric layer on the first dielectric layer, the second dielectric layer including filled vias formed on the bond pads and at least partially covering the IC die; conductive pillars connected to the first metal layer and extended through the second dielectric layer; and a third layer on the second layer including a third dielectric layer and a second metal layer with a first plurality of second metal traces connected to the bond pads through the filled vias and a second plurality of second metal traces connected to the conductive pillars.

2. The semiconductor package of claim 1, wherein: the first metal layer has a first footprint; and the IC die has a second footprint less than the first footprint, the second footprint being surrounded by an outer perimeter of the first footprint.

3. The semiconductor package of claim 1, further comprising: a first set of filled vias in the third layer, the first set of filled vias being externally accessible and connected to the first plurality of second metal traces; and a second set of filled vias in the third layer, the second set of filled vias being externally accessible and connected to the second plurality of second metal traces.

4. The semiconductor package of claim 1, further comprising: a die attach material disposed between the second side of the IC and the first metal layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Reference will now be made to the accompanying drawings, which are not necessarily drawn to scale, wherein:

[0012] FIG. 1A-G are successive cross-section views of an in-process EMI shielded semiconductor package comprising a precision or sensitive IC embedded within a multilayer package substrate corresponding to results following steps in an example method for forming an EMI shielded semiconductor package, according to an example aspect. FIG. 1A shows in-process results after forming a first layer on a carrier comprising a first metal trace that is embedded in a first dielectric layer. FIG. 1B shows in-process results after attaching an IC die including circuitry connected to bond pads with its top side up using a die attach material over the first trace. FIG. 1C shows in-process results after forming metal pillars on the first metal trace lateral to the IC die. FIG. 1D shows in-process results after forming a second dielectric layer, and then generally a grinding process to expose a top surface of the metal pillars. FIG. 1E shows in-process results after generally a drilling process through the second dielectric layer over the bond pads to reach the bond pads.

[0013] FIG. 1F shows in-process results after forming a third layer on the second layer including a third dielectric layer extending to a bottom side of the semiconductor package, and a second metal layer including a plurality of second metal traces comprising inner second metal traces over the area of the IC die, and outer second metal traces positioned beyond the area of the IC die, and forming filled vias. The filled vias provide externally accessible contact pads that connect the second metal traces to a bottom side of the semiconductor package. FIG. 1G shows in-process results after removing the carrier and flipping the semiconductor package, and then generally a sawing process in the typical case of a panel of EMI shielded semiconductor packages to provide a plurality of singulated EMI shielded packages.

[0014] FIG. 2 is a top view corresponding to the structure shown in FIG. 1C which as described above shows in-process results after forming metal pillars on the first trace lateral to the IC die, according to an example aspect.

[0015] FIG. 3A and FIG. 3B show a top perspective view and a cross-sectional view, respectively, of a semiconductor package assembly comprising disclosed EMI shielded semiconductor package comprising an IC embedded within a package substrate mounted on pads on a top of a PCB that provides a bottom metal shield for the IC, according to an example aspect. In FIG. 3B, the PCB is also shown with its dielectric having embedded filled vias connected to metal pads.

DETAILED DESCRIPTION

[0016] Example aspects are described with reference to the drawings, wherein like reference numerals are used to designate similar or equivalent elements. Illustrated ordering of acts or events should not be considered as limiting, as some acts or events may occur in different order and/or concurrently with other acts or events. Furthermore, some illustrated acts or events may not be required to implement a methodology in accordance with this Disclosure.

[0017] Also, the terms “connected to” or “connected with” (and the like) as used herein without further qualification are intended to describe either an indirect or direct electrical connection. Thus, if a first device “connects” to a second device, that connection can be through a direct electrical connection where there are only parasitic s in the pathway, or through an indirect electrical connection via intervening items including other devices and connections. For indirect connecting, the intervening item generally does not modify the information of a signal but may adjust its current level, voltage level, and/or power level.

[0018] Several terms used herein will now be defined. A multilayer package substrate as used herein is a particular package substrate arrangement that comprises a plurality (at least two) of stacked layers where each layer is pre-configured with metal plating such as copper plating or interconnects to provide electrical connections in the package. Such a package substrate is generally built by forming a dielectric layer such as a mold compound (generally comprising an epoxy material) or other dielectric organic compound(s) around a leadframe substrate comprising a metal material between a patterned top metal layer and a patterned metal bottom layer. Such package substrates can comprise single-die or multi-die configurations, both lateral and vertically stacked, enabling low-profile and fine-pitch packages, which enable different stackups, materials, and manufacturing processes that have recognized benefits when applied to disclosed aspects.

[0019] An IC die as used herein comprises a substrate having at least a semiconductor surface (generally an all-semiconductor substrate, such as comprising silicon having an optional epitaxial layer thereon), where there were circuit elements (including transistors, and generally diodes, resistors, capacitors, etc.) formed in the semiconductor surface that are configured together for generally realizing at least one circuit function. Various nodes of the circuitry are connected to bond pads on the top side of the IC, where the bond pads generally comprise the top layer metal for the IC. The IC can comprise a power device such as an amplifier or a power regulator.

[0020] FIGS. 1A-G are successive cross-section views of an in-process EMI shielded semiconductor package comprising a precision or sensitive IC embedded within a multilayer package substrate corresponding to results following steps in an example method for forming an EMI shielded semiconductor package. FIG. 1A shows in-process results after forming a first layer 115 on a carrier 105 (such as a metal carrier) comprising a first metal layer shown including a first metal trace 115a that is embedded in a first dielectric layer 115b that can comprise a mold compound. The first metal trace 115a upon a conclusion of the method provides what will be a top EMI shield for an IC below. Although the first metal trace 115a is shown as a continuous structure that covers an entire area of the IC die 120, the first metal trace 115a can also be a patterned structure that includes gaps so that it does not covers all of the area of the IC die.

[0021] FIG. 1B shows in-process results after attaching an IC die 120 including circuitry 180 connected to bond pads 121 with its top side up using a die attach material 124 to attach the bottom side of the IC die 120. The die attach material 124 can comprise a dielectric material or can comprise an electrically and thermally conductive material, such as an epoxy with silver particles or solder.

[0022] For example, in the case of a dielectric die attach material, the die attach material 124 can comprise a die attach film (DAF) on the first metal trace 115a. The circuitry 180 for the IC die comprises circuit elements (including transistors, and generally diodes, resistors, capacitors, etc.) that may be formed in the epitaxial layer on a bulk substrate material, where the circuitry 180 is configured together for generally realizing at least one circuit function. Example circuit functions include analog (e.g., amplifier or power converter), radio frequency (RF), digital, or non-volatile memory functions.

[0023] FIG. 1C shows in-process results after forming metal pillars 132 on the first metal trace 115a positioned lateral to the IC die 120. The metal pillars 132 generally comprise copper, and have a height that extends above the top side surface of the IC die 120. A plating process can be used for forming the metal pillars 132. The metal pillars 132 can in one arrangement have a rectangular prism shape, which is defined as a 3-dimensional solid shape which has six faces that are all rectangles. In addition, the metal pillars 132 can generally have a variety of other shapes such as cylindrical, where the shape of the metal pillars 132 that can generally be designed depending on a given application.

[0024] Although a plurality of spaced apart metal pillars 132 are generally formed, such as depicted in FIG. 1C and FIG. 2 described below, it may also be possible for instead of a plurality of spaced apart metal pillars 132, a continuous (single) metal ring can be formed around the IC die 120. In the case of spaced apart metal pillars 132, a nominal spacing can be 0.5 mm±20%. Again, in the case spaced apart metal pillars 132, the metal pillars 132 can collectively cover 10% to 40% of the area around the IC die 120. Regarding the gap between the adjacent metal pillars 132, the gap is generally a minimum of 0.1 mm, and a maximum which can depend on the IC die size. An area for the metal pillars 132 can be 0.05 mm.sup.2 and 2 mm.sup.2.

[0025] FIG. 1D shows in-process results after forming a second dielectric layer 116b, such as using a molding process to form a mold compound, and then grinding to expose a top surface of the metal pillars 132. FIG. 1E shows in-process results after forming vias 116c through the second dielectric layer 116b, such as using laser drilling, where the vias 116c are positioned over the bond pads 121. The vias 116c reach a top surface of the bond pads 121 to enable making a contact to the bond pads 121 as described below.

[0026] FIG. 1F shows in-process results after forming a third layer 117 on the second layer including a second metal layer 117a including a plurality of second metal traces comprising outer metal traces 117a1 that each connect to a metal pillar 132, and inner metal traces 117a2 that included vertical section that fills the vias 116c shown in FIG. 1E to form filled vias 117v that connect to the bond pads 121. The third layer 117 also includes a third dielectric layer 117b, such as comprising a mold layer, and filled vias 117c that provide externally accessible contact pads that connect the second metal traces to a bottom side of the semiconductor package shown at the top of FIG. 1F, that has second filled vias 117c embedded therein that contact the inner metal traces 117a2 and the outer metal traces 117a1.

[0027] Although not shown, the method can further comprise forming a fourth layer on the third layer 117. In one arrangement fourth layer is essentially identical to the third layer, and the metal traces of the fourth layer are aligned to the outer metal traces 117a1 in the inner metal traces 117a2. Advantages to forming this fourth layer can be better thermal performance and PCB level reliability, where is the fourth layer used for the connection to the PCB.

[0028] F1G. 1G shows in-process results after removing the carrier 105 and flipping the in-process package substrate, and then singulation generally comprising a sawing process in the typical case of a panel of EMI shielded semiconductor packages to provide a plurality of singulated EMI shielded semiconductor packages shown as an EMI shielded semiconductor package 190. After removing the carrier 105, there may be a surface finish treatment before the singulation. A total thickness of the EMI shielded semiconductor package 190 may be 350 μm to 600 μm, such as about 450 μm. The metal pillars 132 may have a height that is between 50% and 90% of the total thickness of the EMI shielded semiconductor package 190.

[0029] FIG. 2 is a top view 200 corresponding to the structure shown in FIG. 1C which as described above shows in-process results after forming metal pillars 132 on the first metal trace 115a lateral to the IC die 120, according to an example aspect. There can be seen to be gaps 133 between neighboring metal pillars 132. Although shown having a rectangular cross-section, the metal pillars 132 as described above can also have other shapes including a circular cross-section or other elliptical cross-section.

[0030] FIG. 3A and FIG. 3B show a top perspective view and a cross-sectional view, respectively, of a semiconductor package assembly 300 comprising a disclosed EMI shielded semiconductor package comprising an IC die 120 (such as the EMI shielded semiconductor package 190 shown in FIG. 1G described above) embedded within a package substrate mounted on pads 321 on a top surface of a PCB 320 that provides a bottom metal shield 371 for the IC die 120 that is shown covering an entire area of the IC die 120. There is a top metal EMI shield shown as 315a above the IC 120, which corresponds to first metal trace 115a described above. Metal traces on the PCB 320 are shown as 322. In FIG. 3B, the PCB 320 is also shown with its dielectric layer 326 having embedded filled vias 327 connected to metal pads 328.

EXAMPLES

[0031] Disclosed aspects are further illustrated by the following specific Examples, which should not be construed as limiting the scope or content of this Disclosure in any way.

[0032] An EMI simulation was run to compare results from a conventional fused Thin Shrink Small Outline Package (TSSOP) versus a disclosed EMI shielded device. The TSSOP is a rectangular surface mount plastic IC package with gull-wing leads. The electric field data evidenced that a disclosed package substrate including EMI shielding reduces an electric field by a factor of three (from 30 V/m to 10 V/m) received on the top surface of the IC die as compared to a conventional fused TSSOP.

[0033] Disclosed aspects can be integrated into a variety of assembly flows to form a variety of different semiconductor packages and related products. The semiconductor package can comprise single IC die or multiple IC die, such as configurations comprising a plurality of stacked IC die, or laterally positioned IC die. A variety of package substrates may be used. The IC die may include various elements therein and/or layers thereon, including barrier layers, dielectric layers, device structures, active elements and passive elements including source regions, drain regions, bit lines, bases, emitters, collectors, conductive lines, conductive vias, etc. Moreover, the IC die can be formed from a variety of processes including bipolar, insulated-gate bipolar transistor (IGBT), CMOS, BiCMOS and MEMS.

[0034] Those skilled in the art to which this Disclosure relates will appreciate that many variations of disclosed aspects are possible within the scope of the claimed invention, and further additions, deletions, substitutions and modifications may be made to the above-described aspects without departing from the scope of this Disclosure.