A plurality of lead pins (2a-d) penetrates through a stem (1) having a circular shape and includes a signal lead pin (2a,2b). A block (4) is provided on an upper surface of the stem. A waveguide light receiving device (9) is provided on a side surface of the block. An amplifier (6) is provided on the side surface of the block and amplifies an electric signal output from the waveguide light receiving device. A first relay substrate is provided on the upper surface of the stem and arranged between the block and the signal lead pin. A first transmission line (12a,12b) is provided on the first relay substrate. A first wire (10f,10g) connects one end of the first transmission line and an output terminal of the amplifier. A second wire (10h,10i) connects the other end of the first transmission line (12a,12b) and the signal lead pin.

An electromagnetic wave detector includes: a substrate; an insulating layer provided on the substrate; a graphene layer provided on the insulating layer; a pair of electrodes provided on the insulating layer, with the graphene layer being interposed therebetween; and buffer layers interposed between the graphene layer and the electrodes to separate the graphene layer and the electrodes from each other. The electromagnetic wave detector array includes arrayed electromagnetic wave detectors that are the same as or different from each other.

An electromagnetic wave detector includes: a substrate; an insulating layer provided on the substrate; a graphene layer provided on the insulating layer; a pair of electrodes provided on the insulating layer, with the graphene layer being interposed therebetween; and buffer layers interposed between the graphene layer and the electrodes to separate the graphene layer and the electrodes from each other. The electromagnetic wave detector array includes arrayed electromagnetic wave detectors that are the same as or different from each other.

A radiation detector includes a substrate, a plurality of device sections each disposed separately from the substrate and each including a photoelectric conversion device, a buried layer formed in a region between the device sections, and a wavelength conversion layer that is formed on the plurality of device sections and converts entered radiation into light. Any of the device sections includes a first surface that faces the wavelength conversion layer, and a second surface that faces the substrate, and an upper end of the buried layer is disposed at a position higher than the second surface of the any of the device sections.

A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.

A diode (11) is provided on a substrate (1) and thermally insulated from the substrate (1). A positive feedback circuit (18) provides a positive feedback loop so that when a current of the diode (11) decreases due to a change in temperature of the diode (11), the positive feedback circuit (18) further decreases the current of the diode (11), and when the current of the diode (11) increases, the positive feedback circuit (18) further increases the current of the diode (11).

An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. A semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and the formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.

An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. A semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and the formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.

An optical semiconductor device with cascade vias is disclosed. The semiconductor device a logic die having a core circuit area and a logic peripheral circuit area; a memory die positioned on the logic die and having a memory cell area and a memory peripheral area; a first inter-die via positioned in the memory peripheral area; a landing pad positioned on the first inter-die via; and a sensor die positioned on the memory die and including a sensor pixel area and a sensor peripheral area, a first intra-die via positioned in the sensor peripheral area. The first inter-die via and the first intra-die via are electrically coupled through the landing pad in a cascade manner.

An optical semiconductor device with cascade vias is disclosed. The semiconductor device a logic die having a core circuit area and a logic peripheral circuit area; a memory die positioned on the logic die and having a memory cell area and a memory peripheral area; a first inter-die via positioned in the memory peripheral area; a landing pad positioned on the first inter-die via; and a sensor die positioned on the memory die and including a sensor pixel area and a sensor peripheral area, a first intra-die via positioned in the sensor peripheral area. The first inter-die via and the first intra-die via are electrically coupled through the landing pad in a cascade manner.