SUBSTRATE ALIGNMENT SYSTEMS AND RELATED METHODS

Abstract

Implementations of a method of making a plurality of alignment marks on a wafer may include: providing a wafer including an alignment feature on a first side of the wafer. The method may include aligning the wafer using a camera focused on the first side of the wafer. The wafer may be aligned using the alignment feature on the first side of the die. The wafer may also include creating a plurality of alignment marks on a second side of the wafer through lasering, sawing, or scribing.

Claims

1. A wafer comprising: a first side and a second side opposite the first side; an alignment feature on the first side of the wafer; a metal layer comprised on the second side of the wafer; and a plurality of alignment marks extending only partially into a thickness of the metal layer.

2. The wafer of claim 1, wherein the metal layer comprises a thickness of 10 microns.

3. The wafer of claim 1, wherein the metal layer comprises a thickness of 1 micron at the plurality of alignment marks.

4. The wafer of claim 1, wherein the wafer comprises a thickness of 50 microns or less.

5. The wafer of claim 1, wherein the plurality of alignment marks correspond with the plurality of alignment features.

6. The wafer of claim 1, further comprising a ring formed around a perimeter of the second side of the wafer.

7. The wafer of claim 1, wherein the metal layer comprises copper.

8. A wafer comprising: a first side and a second side opposite the first side; an alignment feature in a die street on the first side of the wafer between a plurality of active areas on the first side of the wafer; a metal layer comprised on the second side of the wafer; and a plurality of alignment marks comprised in a thickness of the metal layer.

9. The wafer of claim 8, wherein the metal layer comprises a thickness of 10 microns or less.

10. The wafer of claim 8, wherein the plurality of alignment marks extend only partially through a thickness of the metal layer.

11. The wafer of claim 8, wherein the wafer comprises a thickness of 50 microns or less.

12. The wafer of claim 8, wherein the plurality of alignment marks correspond with the plurality of alignment features.

13. The wafer of claim 8, further comprising a ring formed around a perimeter of the second side of the wafer.

14. The wafer of claim 8, wherein the metal layer comprises copper.

15. A wafer comprising: a first side and a second side opposite the first side; a plurality of die and one or more die streets between each of the plurality of die; a plurality of alignment features in the one or more die streets on the first side of the wafer between a plurality of active areas on the first side of the wafer; a metal layer comprised on the second side of the wafer; and a plurality of alignment marks comprised in a thickness of the metal layer, wherein the plurality of alignment marks correspond with one or more of the plurality of alignment features.

16. The wafer of claim 15, wherein the metal layer comprises a thickness of 10 microns or less.

17. The wafer of claim 15, wherein the plurality of alignment marks extends only partially through a thickness of the metal layer.

18. The wafer of claim 15, wherein the wafer comprises a thickness of 50 microns or less.

19. The wafer of claim 15, further comprising a ring formed around a perimeter of the second side of the wafer.

20. The wafer of claim 15, wherein the metal layer comprises copper.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Implementations will hereinafter be described in conjunction with the appended drawings, where like designations denote like elements, and:

[0028] FIG. 1 is a cross sectional view of a substrate having an alignment mark in a metal layer;

[0029] FIG. 2 is a cross sectional view of a substrate having a groove in a metal layer; and

[0030] FIG. 3 is a cross sectional view of a singulated substrate.

DESCRIPTION

[0031] This disclosure, its aspects and implementations, are not limited to the specific components, assembly procedures or method elements disclosed herein. Many additional components, assembly procedures and/or method elements known in the art consistent with the intended method of making a plurality of alignment marks on a substrate will become apparent for use with particular implementations from this disclosure. Accordingly, for example, although particular implementations are disclosed, such implementations and implementing components may comprise any shape, size, style, type, model, version, measurement, concentration, material, quantity, method element, step, and/or the like as is known in the art for such a method of making a plurality of alignment marks on a substrate, and implementing components and methods, consistent with the intended operation and methods.

[0032] For semiconductor die that are less than 50 microns in thickness, particular processing challenges exist. Die handling, die strength, and performing processing operations with the die all present specific challenges, as die and wafer breakage can significantly reduce yield and/or affect device reliability. Die strength is negatively affected by traditional singulation options like sawing which induce die chipping and cracking along the die streets. These chips and cracks formed during the sawing process can eventually propagate during operation and reliability testing causing the die to fail.

[0033] Referring to FIG. 1, a cross sectional side view of a substrate 2 coupled to a plurality of layers is illustrated. The term “substrate” refers to a semiconductor substrate as a semiconductor substrate is a common type of substrate, however, “substrate” is not an exclusive term that is used to refer to all semiconductor substrate types. Similarly, the term “substrate,” may refer to a wafer as a wafer is a common type of substrate, however, “substrate” is not an exclusive term that is used to refer to all wafers. The various semiconductor substrate types disclosed in this document that may be utilized in various implementations may be, by non-limiting example, round, rounded, square, rectangular, or any other closed shape. In various implementations, the substrate 2 may include a substrate material such as, by non-limiting example, single crystal silicon, silicon dioxide, glass, gallium arsenide, sapphire, ruby, silicon on insulator, silicon carbide, polycrystalline or amorphous forms of any of the foregoing, and any other substrate material useful for constructing semiconductor devices. In particular implementations, the substrate may be a silicon-on-insulator substrate.

[0034] In various implementations disclosed in this document, the semiconductor substrate 2 includes a plurality of semiconductor die that have been processed using a semiconductor fabrication process to form one or more semiconductor devices therein or thereon (not shown). This may include forming a plurality of layers on a first side 8 the substrate 2. The plurality of layers may be patterned, and in various implementations, may be patterned (or otherwise removed) to not be over a die street 12 in the substrate 2. The plurality of layers may include, by non-limiting example, one or more metal layers 4 and 6, one or more passivation layers 10, any other layer, and any combination thereof. In various implementations, the plurality of die may include power semiconductor devices, such as, by non-limiting example, a MOSFET, an IGBT, or any other power semiconductor device. In other implementations, the plurality of die may include non-power semiconductor devices.

[0035] In FIG. 1, the die are illustrated on either side of the die street 12. In various implementations, the die include aluminum, copper, and other electrically conductive materials. Following the completion of the fabrication process (or during some portion of it, in some implementations), the semiconductor substrate 2 is thinned on a side of the semiconductor substrate 2 that is opposite the side on which the one or more semiconductor devices have been formed to a desired substrate thickness. The thinning process takes place using backgrinding, lapping, etching, any combination thereof, or any other technique for removing the material of the semiconductor substrate 2 substantially uniformly across the largest planar surface of the substrate.

[0036] In various implementations, the substrate 2 may be thinned to a thickness less than 50 microns (μm). In other implementations, the substrate 2 may be thinned to a thickness less than 30 μm. In still other implementations, the substrate 2 may be thinned to a thickness less than 100 μm, more than 100 μm, and in other various implementations, the substrate 2 may not be thinned. In particular implementations, the substrate 2 may be thinned to a thickness of 25 μm, and in other particular implementations, the substrate may be thinned to a thickness of 75 μm. The substrate 2 may be thinned through backgrinding, etching, or any other thinning technique.

[0037] In various implementations, the thinning process may create an edge ring around the wafer (like that present in the backgrinding process marketed under the tradename TAIKO by Disco Hi-Tec America, Inc. of Santa Clara, Calif.). The edge ring acts to structurally support the wafer following thinning so that no wafer carrier may need to be utilized during subsequent processing steps. In various implementations, the thinning process may be carried out after the semiconductor substrate 2 has been mounted to a backgrinding tape whether an edge ring is formed during backgrinding or not. A wide variety of backgrinding tapes may be employed in various implementations, including those that are compatible with subsequent plasma etching operations.

[0038] In various implementations, following the thinning process, a back metal layer 14 is applied to the semiconductor die through, by non-limiting example, sputtering, evaporation, or another metal deposition process. In particular implementations, the backside metal layer 14 may be copper or a copper alloy. In other implementations, the backside metal layer may include any other type of metal, metal alloy, or combination thereof. In various implementations, the backside metal layer may be about 10 μm thick. In other implementations, the backside metal layer may be more or less thick than 10 μm. The backside metal layer 14 may be evaporated onto the substrate 2, however, in other implementations (including implementations having thicker substrates), the backside metal layer 14 may be electroplated or electrolessly plated onto the substrate 2 or formed on the substrate using another technique.

[0039] In various implementations, the deposition process is conducted while the wafer is either supported by an edge ring or supported by the backgrinding tape. In other implementations, however, the substrate may be demounted from the backgrinding tape and mounted to another support tape for subsequent processing steps. The method of forming and singulating a plurality of die may include flipping the substrate and, though not illustrated, in various implementations, the method may include applying a tape to a first side of the plurality of layers.

[0040] FIG. 1 illustrates an implementation of a semiconductor substrate 2 following the back metal deposition process and the thinning process. In various implementations, as illustrated, the substrate 2 is coupled with a tape (which may be the backgrinding or other support tape in various implementations). In other implementations, however, at this stage in the process the wafer may not be coupled with a tape (such as when an edge ring is being used). As illustrated, the one or more semiconductor die 4 (not yet separately visible) are covered by a layer of passivation material 10. In various implementations, the passivation material 10 may include, by non-limiting example, silicon nitride, silicon dioxide, polyimides, metal pads, underbump metallization (UBM), any combination thereof, and any other layer or material capable of facilitating electrical or thermal connection between the one or more semiconductor die and/or protecting the one or more semiconductor die from contaminants. In various implementations, thickness of the back metal may vary from between about 1 micron to about 15 microns. In particular implementations, the thickness of the back metal may be between about 1 micron to about 3 microns. In some implementations, the total thickness of the semiconductor substrate 2 may be less than about 50 microns. In particular implementations, the total thickness of the semiconductor substrate may be between about 25 microns to about 35 microns. In various implementations, the total thickness may be about 25 microns.

[0041] Following the thinning process, the various die formed in the semiconductor substrate 2 need to be singulated from one another so they can be subsequently packaged into semiconductor packages. Traditional singulation methods include singulating die from a front side of a substrate. In such methods, alignment hardware such as lenses and motors is required to be positioned under a vacuum chuck. The vacuum chuck is required to hold the wafer in place during the singulation process giving the alignment microscope/camera limited range across the wafer. However, the microscope/camera is unable to see through the vacuum chuck. In some traditional methods, the wafer is mounted to tape, which is also difficult for the camera to see through.

[0042] Referring to FIG. 1, a silicon wafer 2 before singulation is illustrated. In this particular implementation, the wafer includes aluminum 4 and copper 6 on a first side 8 of the wafer. A passivation layer 10 is formed around a die street 12 on the substrate 2. The die street 12 may act as an alignment feature. In various implementations, alignment features may also be included within the die street or on the edge(s) of active or inactive die areas formed on the substrate. In some implementations, two or more alignment features are used to align the substrate. The wafer 2 includes copper 14 on a second side 16 of the wafer 2 (which may be electroplated copper in various implementations). The copper plating may have a thickness of about 10 microns. In various implementations, copper may not be used, but a metal plating which may be gold, silver, nickel, and other materials used for back metallization of wafers and substrates.

[0043] An implementation of a method of forming a plurality of alignment marks on a wafer is illustrated in FIGS. 1-3. Referring to FIG. 1, a wafer is shown pre-singulation. In various implementations, the wafer may be mounted to a chuck, tape, or another structure to support the wafer (or an edge ring may be used as support). The method includes providing a wafer 2 having an alignment feature 12 on the first side 8 of the wafer. The method also includes aligning the wafer 2 using a camera/microscope 18 focused on the first side of the wafer 8 using the alignment feature 12. In various implementations, the alignment feature may include a die street, a portion of a die street, or another alignment feature in an active or inactive die area of the substrate. In other implementations, the alignment features may be visible within the die street. The alignment features within the die street may be, by non-limiting example, on a first outer surface of the substrate. In some implementations, the alignment features may be located within any layer of the substrate. In still other implementations, the alignment features may be located on an edge or corner of a die. The camera used to align the substrate may be an infrared camera or a visible light camera. In some implementations, a microscope may be used in point locations to align the wafer and to make alignment marks which will be described in more detail below.

[0044] The method also includes creating a plurality of alignment marks 20 on a second side 16 of the wafer 2. The alignment marks 20 may be formed through lasering, sawing, or scribing. In various implementations, scribing of the marks may include using a scribe tool or a stylus. As illustrated, the alignment mark 20 is created/formed in the copper layer 14 on the second side of the wafer. In various implementations, a different metal or metal alloy like any disclosed herein may be used as the metal layer. In other implementations, another layer of material may be formed on the second side of the wafer. As previously described, the metal layer may have a thickness of about 10 microns before the alignment mark is created. Creating alignment marks on the second side of the wafer in the metal backing may allow the substrate to remain aligned or be realigned for subsequent processing a standard camera facing the second side of the wafer/substrate 2.

[0045] Referring to FIG. 2, a wafer/substrate 22 having a groove 24 in a metal layer 26 is illustrated. The method for making a plurality of alignment marks on a wafer 22 also includes forming a groove 24 in a thickness of the metal layer 26. The groove may be formed through lasering, sawing, or scribing. Scribing may include using a scribe tool or a stylus. The metal layer 26 may have a thickness of about 1 micron in the alignment mark 24 after grooving. The thickness, however, may be less than 1 micron or more than 1 micron in various implementations. Singulating the wafer 28 is illustrated in FIG. 3. The wafer may be singulated with a lower risk of re-deposition because the backmetal thickness has been reduced. In various implementations, the back metal having a thickness of about 10 microns may be reduced to about 1 micron or less.

[0046] Singulating may be done through plasma cutting, lasering, or sawing. In various implementations, singulation of the dies may be performed from a first side of the wafer or a second side of the wafer. In some implementations, the grooving and singulating of the wafer may be performed with the same tool. By non-limiting example, grooving and singulating may be done using a laser. In other implementations, grooving and singulating may be done using different methods. For example, grooving may be done through lasering while singulating may be done using a saw. In another example, grooving may be done with a saw and singulating may be done through lasering. Where plasma etching is employed, the etching may take place from the first side of the wafer, in various implementations. In various implementations, the method described can be used with or without tape on the first side of the substrate. The method may further include remote plasma healing after singulation to remove any sidewall damage. Remote plasma healing may also be performed to remove any re-deposition that may have occurred.

[0047] In places where the description above refers to particular implementations of methods for making a plurality of alignment marks on a wafer and implementing components, sub-components, methods and sub-methods, it should be readily apparent that a number of modifications may be made without departing from the spirit thereof and that these implementations, implementing components, sub-components, methods and sub-methods may be applied to other methods for making a plurality of alignment marks on a wafer.