Saw assisted facet etch dicing

Abstract

A dicing system and methods may include a novel way to separate die on a wafer in preparation for packaging that results in smooth diced edges. This is specifically advantageous, but not limited to, edge-coupled photonic chips. This method etches from the front side of the wafer and dices from the back side of the wafer to create a complete separation of die. It creates an optically smooth surface on the front side of the wafer at the location of the optical device (waveguides or other) which enables direct mounting of adjacent devices with low coupling loss and low optical scattering. The backside dicing may be wider than the front side etch, so as to recess this sawed surface and prevent it from protruding outward, resulting in rough surfaces inhibiting a direct joining of adjacent devices.

Claims

1. A method of making a die having a smooth edge for edge-coupling to an optical waveguide, said method comprising the steps of: etching a front side of a wafer through an active layer of the wafer to create an etched cavity defining the smooth edge and extending through the active layer and at least partially into a substrate layer of the wafer on which the active layer is formed; disposing a layer of protective material over at least the smooth edge within the etched cavity; dicing the wafer from a backside of the wafer through the substrate layer opposite the etched cavity to at least a bottom surface of the protective material to produce a diced cavity; and removing the protective layer to expose the smooth edge.

2. The method of claim 1, wherein the step of dicing further comprises using a dicing blade having a blade thickness greater than a width of the etched cavity perpendicular to the dicing blade.

3. The method of claim 1, further comprising the step of aligning the dicing blade on the backside of the wafer to intersect the etched cavity.

4. The method of claim 1, further comprising mounting the wafer's frontside to a dicing tape prior to the step of dicing.

5. The method of claim 1, further comprising the step of creating at least one alignment mark on the backside of the wafer.

6. The method of claim 1, further comprising the step of: masking the front side of the wafer with a masking layer prior to the step of etching; and stripping the masking layer prior to the step of dicing.

7. The method of claim 6 further comprising the step of: protecting the etched cavity with a protective material after the step of stripping said masking layer; and cleaning away said protective material after the step of dicing.

8. The method of claim 7, further comprising stripping the protective material from the said etched cavity with a solvent.

9. The method of claim 6, further comprising the masking layer being photosensitive.

10. The method of claim 6, further comprising the masking layer comprising a hard mask material patterned directly or indirectly.

11. The method of claim 6, further comprising stripping the masking layer with a solvent.

12. A manufacturing system to make a die with at least one smooth edge that uses the method of claim 6.

13. A manufacturing system to make a die with at least one smooth etched cavity that uses the method of claim 6.

14. A die with at least one smooth edge made by a method of making a die, said method comprising the method of claim 6.

15. A die with at least one smooth etched cavity made be a method of making a die, said method comprising the method of claim 6.

16. A manufacturing system to make a die with at least one smooth edge that uses the method of claim 1.

17. A manufacturing system to make a die with at least one smooth etched cavity that uses the method of claim 1.

18. A die with at least one smooth edge made by a method of making a die, said method comprising the method of claim 1.

19. A die with at least one smooth etched cavity made by a method of making a die, said method comprising the method of claim 1.

20. A method of making a die having a smooth edge for edge-coupling to an optical waveguide, said method comprising the steps of: masking the front side of the wafer with a masking layer; etching a front side of a wafer through an active layer of the wafer to create an etched cavity defining the smooth edge and extending through at least a portion of the active layer; stripping the masking layer; disposing a protective material over the etched cavity thereby protecting the etched cavity with the protective material; dicing the wafer from a backside of the wafer opposite the etched cavity to at least a bottom surface of cavity protective material to produce a diced cavity that retains the smooth edge; and removing the protective material.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The disclosed subject matter itself, as well as further objectives, and advantages thereof, will best be illustrated by reference to the following detailed description of embodiments of the methods and systems read in conjunction with the accompanying drawings, wherein:

(2) FIG. 1 illustrates, in flowchart form, the method 100 by using etching 110 in combination with dicing 135 according to some embodiments;

(3) FIG. 2 is a simplified flowchart of a dicing method 200 according to an embodiment;

(4) FIG. 3 is a partial cross-section view of a wafer 300 according to an embodiment, with parts in section, and parts omitted that shows various layers of the wafer;

(5) FIG. 4 is a partial cross-section view of a wafer 300 according to an embodiment, which demonstrates the partially etched cavity 350 reaching into the substrate 310;

(6) FIG. 5 is a partial cross-section view of a wafer 300 according to an embodiment, which demonstrates the etched cavity 350 with a coating of protective material 340;

(7) FIG. 6 is a partial cross-section view of an upside-down wafer 300 according to an embodiment, which demonstrates optional alignment notches 360;

(8) FIG. 7 is a partial cross-section view of a wafer 300 according to an embodiment, which demonstrates the die mounted on a Dicing tape 370 along with a diced cavity 390;

(9) FIG. 8 is a partial cross-section view of a wafer 300 according to an embodiment, which demonstrates the diced cavity 390;

(10) FIG. 9 is a partial cross-section view of a wafer 300 according to an embodiment, which demonstrates the resulting smooth edged adjacent dies;

DETAILED DESCRIPTION OF THE INVENTION

(11) In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific embodiments which may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the embodiments and disclosure. It is to be understood that other embodiments may be utilized, and that logical, mechanical, electrical, and other changes may be made without departing from the scope of the embodiments and disclosure. In view of the foregoing, the following detailed description is not to be taken as limiting the scope of the embodiments or disclosure.

(12) The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms “a”, “an”, and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising” or “includes” and/or “including” when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof.

(13) It will be appreciated that for simplicity and clarity of illustration, where considered appropriate, reference numerals may be repeated among the figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the implementations described herein. However, it will be understood by those of ordinary skill in the art that the implementations described herein may be practiced without these specific details. In other instances, well-known methods, procedures and components have not been described in detail so as not to obscure the implementations described herein. Also, the description is not to be considered as limiting the scope of the implementations described herein.

(14) The detailed description set forth herein in connection with the appended drawings is intended as a description of exemplary embodiments in which the presently disclosed apparatus and system can be practiced. The term “exemplary” used throughout this description means “serving as an example, instance, or illustration,” and should not necessarily be construed as preferred or advantageous over other embodiments.

(15) Illustrated in FIG. 1 is a simplified flowchart of an exemplary dicing method 100 to make a die having a smooth edge according to an embodiment that comprises the two steps of etching 110 the frontside of a wafer through active layers of the wafer to create an etched cavity extending through the active layers into a substrate of the die and dicing 135 the wafer from backside of the wafer to at least the bottom surface of the etched cavity to create a diced cavity or accomplish the separation of the dies on the wafer.

(16) Dicing the wafer from the backside of the wafer accomplishes the objective of getting a smooth edge on the die in the active layers as the dicing blade does not go through the active layers and the resulting rough edges associated with the dicing blade may be avoided in the layers of interest.

(17) In other embodiments, the depth of the etched cavity may not go all the way through all the active layers on the wafer if the relevant layers that require the desired smoothness happen to be only a few of the top active layers but not all active layers.

(18) The etching 110 step in combination with dicing 135 the remaining wafer from the backside to a thickness less than the whole wafer thickness may produce dies that are useful for any photonic system looking to edge-couple to other integrated waveguides.

(19) In the discussion that follows describes a set of steps that may be used to separate dies with smooth edges that may be suitable for photonic circuit applications. In other embodiments, the method may be used to dice through one side of a double sided die where one side of the die needs smooth edges but the other side of the die may not require such smooth edges. Illustrated in FIG. 2 is another simplified flowchart of an exemplary dicing method 200 to make a die having a smooth edge according to an embodiment that comprises the steps of: (i) masking 105 the frontside of the wafer with a masking layer; (ii) etching 110 the frontside of a wafer through the active layers of the wafer desired to have smooth edges to create an etched cavity extending through those active layers into a substrate of the die if desired; (iii) stripping 115 the masking layer; (iv) protecting 120 the etched cavity with a protective material; (v) aligning 125 the wafer to a backside patterning layer that serves as a guide for dicing; (vi) mounting 130 the wafer to a dicing tape with wafer's front side mounted on the dicing tape; (vii) dicing 135 the wafer from the backside of the wafer to at least the bottom surface of the etched cavity to accomplish the separation of the dies on the wafer; (viii) unmounting 137 the dies from the dicing tape; and (ix) cleaning 140 away the protective material from the dies.

(20) Referring to FIG. 2, in an illustrative embodiment, the masking layer used for masking the frontside of the wafer in the step of masking 105 may be a photosensitive resist and allow for etching 110, the masking material may be chosen on the basis of it being more adaptable for photonic circuits and waveguide implementations. In other embodiments, the masking layer may be comprised of hard mask such as silicon nitride or metals, which may be patterned directly or indirectly. The process may involve insertion, deposition, growth or photolithography of hard mask material with low etch rate which may act as masking material for the etch process 110.

(21) The step of etching 110 as described in FIG. 2 may make use of microfabrication techniques associated with chemical etching techniques. Some exemplary implementation may use silicon nitride as a hard masking layer. In other embodiments the masking layer may be chosen with due consideration given to its capability to be dissolved through the use of certain solvents to enable easy removal of such material by use of those solvents in the step of stripping 115.

(22) Similarly, the protective material used in the step of protecting 120, to protect against any damage during dicing operation, may also be chosen with consideration of its capability to be dissolved through the use of certain solvents to enable easy removal of such protective material by use of such solvents.

(23) It will be understood by a person with ordinary skills in the art that other embodiments may make use of other types of materials for these purposes and other use available techniques for removal of these materials used in the steps of masking 105 and protecting 120.

(24) Referring to FIG. 2, in certain embodiments, during the step of aligning 125, the wafer may be so aligned so that the cut made by the dicing saw would intersect the etched cavity created in the step of etching 110. In come embodiments, this may be accomplished by means of alignment marks placed on the backside of the wafer with or without the use of an optional protective material to protect the wafer against any damage during dicing 135.

(25) Referring to FIG. 2, in certain embodiments of manufacturing systems, the dicing 135 may further include mounting 130 the wafer on a dicing tape in preparation for the dicing 135 operation using a dicing saw. The step of dicing 135, in certain embodiments, may use a dicing blade on the dicing saw with a blade thickness greater than the width of the etched cavity in a direction perpendicular to the dicing blade resulting in the diced cavity created as a result of the dicing 135 step of method 200 to be larger in width than the etched cavity created as a result of the etching 110 step of method 200. This may result in an etched facet to protrude from the edge surface in a separated die, which may be ideal for coupling coupled devices. This may also allow for die separation without the need for accurate depth or lateral control for the cut and at the same time resulting in complete die separation without the dicing saw blade ever touching the edges of the layers exposed in the etched cavity.

(26) Referring to FIG. 2, the step of cleaning 140 may include, in certain embodiments, the use of solvents to remove the protective material applied to the wafer during the step of protecting 120. It will be understood that other techniques for removal of such protective material may be used instead of chemical processes utilizing solvents. Protective material layer may also be used to prevent particles resulting from the step of dicing 135 from sticking to the etched facet surface that may otherwise cause scattering.

(27) In certain embodiments the backside of the wafer may also be covered with a protective material to protect the wafer against damage from mounting upside down or during dicing 135.

(28) Illustrated in FIG. 3 is a partial cross-section view of a wafer 300 according to an embodiment. In FIG. 3, the depicted wafer 300 comprises multiple layers which may include a substrate layer 310, an active layer 320 and a masking layer 335. FIG. 3 also illustrates the location where the wafer may need to be diced into separate dies in the form of a cut. In other embodiments, the cut 345 may be a pattern formed in the masking layer in preparation for etching. In certain embodiments, the masking layer 335 may be deposited on the wafer during the method step masking 105 of the method 200 as depicted in FIG. 2. In other embodiments, the pattern formed in a masking layer 335 may be limited to smaller dimensions, enabling access to limited portions of the active area and need not be continuous across the entire wafer, as would be needed for complete die separation.

(29) Referring to FIG. 4, it illustrates the cross section of the wafer after the step of etching 110 in method 200 illustrated in FIG. 2, where in this particular embodiment the etching cavity 350 extends through the masking layer 335 and the active layer 320 into the substrate 310. It is to be understood that in certain embodiments there may be multiple active layers present and the etching cavity 350 may extend through all those active layers into the substrate whereas in still other embodiments, there may be multiple active layers present and the etched cavity 350 may only extend through some of those active layers and may not extend all the way through to the substrate. In certain embodiments, this cut may be created by the method step etching 110 of method 200, as illustrated in FIG. 2, through the masking layer 335 to form the etched cavity 350.

(30) Referring to FIG. 5, it illustrates the cross section of the wafer after the step of protecting 120 in method 200 illustrated in FIG. 2, where in this particular embodiment the etching cavity 350 extends through the active layer 320 into the substrate 310. FIG. 5 also depicts the protective material layer 340 created as a result of the step of protecting 120 in method 200 illustrated in FIG. 2. In certain embodiments, the protective material layer 340 may be formed by using material which may be removed by means of solvents. The use of the protective material layer may be necessitated in some embodiments of manufacturing systems in order to protect the etched cavity from damage during the additional steps of mounting 130 or dicing 135 of method 200 as depicted in FIG. 2.

(31) Illustrated in FIG. 6 is a partial flipped cross-section view of a wafer 300 with its frontside at the bottom and the backside at the top of the figure according to an embodiment. FIG. 6 further illustrates the alignment marks 360 that may be used in the step of aligning 125 of method 200 illustrated in FIG. 2. In certain embodiments, the alignment marks 360 may be used in conjunction with an optional protective material 330 as illustrated, whereas in other embodiments they may be directly on the backside of the wafer. These alignment marks 360 may be used in certain embodiments to ensure the dicing blade would intersect the etched cavity 350 during the step of dicing 135 of method 200 as illustrated in FIG. 2. It would be understood that such alignment may be accomplished without the use of alignment mark(s), such as by means of infrared camera mounted on dicing saw to automatically align to the etched cavity on the frontside of the wafer.

(32) Referring to FIG. 7, the depicted wafer 300 is illustrated after the step of dicing 135 of method 200. The wafer is portrayed as being mounted on a dicing tape 370 as a result of the step of mounting 135 of method 200. The wafer also shows a dicing cavity 390, formed as a result of the step of dicing 135 of method 200, extending from the backside of the wafer into the substrate 310 and intersecting the etched cavity 350 that is depicted as partially filled with the protective material 340 deposited as a result of the step of protecting 120 of method 200. It is understood that the width and depth of the dicing cavity 390 may vary in various embodiments as well as the number of active layers on the wafer may vary. In other embodiments the intersection point of the dicing cavity and the etched cavity may be in an active layer instead of the substrate layer. In yet other embodiments, the dicing cavity and etched cavity may not intersect if the embodiment does not require complete separation of die but rather generation of a smooth edged cavity in the die.

(33) FIG. 8 illustrates the wafer 300 after the step of unmounting 137 of method 200 where the wafer is portrayed with the frontside of the wafer at the bottom and the backside of the wafer on the top of the figure with the dicing cavity 390 extending from the backside of the wafer to intersect the etched cavity 350 in the substrate 310.

(34) Finally, FIG. 9 shows the cross section view of two adjacent dies separated on the wafer as a result of executing all the steps of method 200 including the step of cleaning 140, in which the protective material on the frontside of the wafer has been removed. The edges of the active layers are a result of the etching process and are not impacted by the dicing saw as the dicing cavity stops short of the active layer.

(35) It is to be understood that other embodiments may be utilized, such as methods where the backside of the wafer may also be coated with a protective material coating.

(36) Apparatus, methods and systems according to embodiments of the disclosure are described. Although specific embodiments are illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement which is calculated to achieve the same purposes may be substituted for the specific embodiments shown. This application is intended to cover any adaptations or variations of the embodiments and disclosure. For example, although described in terminology and terms common to the field of art, exemplary embodiments, systems, methods and apparatus described herein, one of ordinary skill in the art will appreciate that implementations may be made for other fields of art, systems, apparatus or methods that provide the required functions. The invention should therefore not be limited by the above described embodiment, method, and examples, but by all embodiments and methods within the scope and spirit of the invention.

(37) In particular, one of ordinary skill in the art will readily appreciate that the names of the methods and apparatus are not intended to limit embodiments or the disclosure. Furthermore, additional methods, steps, and apparatus can be added to the components, functions can be rearranged among the components, and new components to correspond to future enhancements and physical devices used in embodiments can be introduced without departing from the scope of embodiments and the disclosure. One of skill in the art will readily recognize that embodiments are applicable to future systems, future apparatus, future methods, and different materials.

(38) All methods described herein can be performed in a suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The use of any and all examples, or exemplary language (e.g., “such as”), is intended merely to better illustrate the disclosure and does not pose a limitation on the scope of the disclosure unless otherwise claimed. No language in the specification should be construed as indicating any non-claimed element as essential to the practice of the disclosure as used herein.

(39) Terminology used in the present disclosure is intended to include all environments and alternate technologies that provide the same functionality described herein.