Magnetic field sensor and method for making same

Abstract

A multi-element sensor for measuring a magnetic field. The multi-element sensor comprises a magnetic sensing element, and an electronic circuit. The magnetic sensing element is mounted on the electronic circuit and comprises a fractured tether. The magnetic sensing element is electrically connected with the electronic circuit. The electronic circuit is produced in a first technology and/or first material and the magnetic sensing element is produced in a second technology and/or second material different from the first technology/material.

Claims

1. A multi-element sensor for measuring a magnetic field, comprising: an integrated circuit element comprising an electronic circuit formed in a semiconductor circuit substrate; a cured adhesive layer disposed over the circuit substrate; a magnetic sensing element comprising a sensor substrate having at least one tether, fractured when transferring the magnetic sensing element using a stamp, for contacting the magnetic sensing element to the adhesive layer, the magnetic sensing element further comprising a top side, and a bottom side opposite the top side, and a magnetic sensor formed on, in, or over the top side of the sensor substrate, wherein the bottom side of the sensor substrate is adhered to the adhesive layer; one or more electrical connections formed at least partly in a conductive distribution layer on the circuit substrate over the electronic circuit, the electrical connections electrically connecting the magnetic sensor to the electronic circuit; and wherein the circuit substrate is a separate substrate from the sensor substrate and the material of the circuit substrate comprises a different material than the material of the sensor substrate.

2. The multi-element sensor according to claim 1, wherein the magnetic sensing element has a thickness between less than 5 μm or between 2 μm and 5 μm.

3. The multi-element sensor according to claim 1, wherein the electrical connections have a thickness between 1.0 μm and 2.0 μm and a width between 1 μm and 10 μm.

4. The multi-element sensor according to claim 1, wherein the material of the sensor substrate has a mobility that is higher than the mobility of the semiconductor of the circuit substrate at room temperature.

5. The multi-element sensor according to claim 1, wherein the magnetic sensor is a Hall sensor, a quantum-well Hall sensor, a magneto-resistive sensor, a giant magneto-resistive sensor, a tunnel magneto-resistive sensor, or wherein the magnetic sensing element comprises graphene.

6. The multi-element sensor according to claim 1, wherein the material of the sensor substrate is a compound semiconductor, a III-V semiconductor, or GaAs, or wherein the semiconductor of the circuit substrate is silicon.

7. The multi-element sensor according to claim 1, comprising a ferromagnetic layer on top of the conductive distribution layer.

8. The multi-element sensor according to claim 1, wherein the multi-element sensor includes a passivation layer formed over the magnetic sensor.

9. The multi-element sensor according to claim 1, wherein the magnetic sensing element comprises supporting structures made of electrically insulating material, situated at least partially on the lateral sides of the sensor substrate.

10. The multi-element sensor according to claim 9, wherein the adhesion layer between the magnetic sensing element and the electronic circuit is chemically bonded to the supporting structures.

11. The multi-element sensor according to claim 1, wherein the magnetic sensing element is mechanically joint with the electronic circuit through an adhesion layer present on the electronic circuit.

12. The multi-element sensor according to claim 1, wherein the magnetic sensing element is smaller than the electronic circuit, and covers only a portion of a surface of the electronic circuit on which the magnetic sensing element is disposed, and extends from the surface of the electronic circuit by a distance of 2 μm or more.

13. A multi-element sensor wafer, comprising: a plurality of spaced apart integrated circuit elements each comprising an electronic circuit disposed over a sacrificial portion of the sensor wafer, and formed in a semiconductor circuit substrate; an adhesive layer disposed over the electronic circuits; a plurality of magnetic sensing elements each comprising a sensor substrate having at least one tether, fractured when transferring the magnetic sensing element using a stamp, for contacting the magnetic sensing element to the adhesive layer, the magnetic sensing element further comprising a top side, and a bottom side opposite the top side, and a magnetic sensor formed on, in, or over the top side of the sensor substrate, wherein the bottom side of the sensor substrate is adhered to the adhesive layer and is disposed over a corresponding electronic circuit; one or more electrical connections formed at least partly in a conductive distribution layer on the circuit substrate over each electronic circuit, the electrical connections electrically connecting the magnetic sensor to the corresponding electronic circuit; and wherein the circuit substrate is a separate substrate from the sensor substrate and the material of the circuit substrate comprises a different material than the material of the sensor substrate.

14. The multi-element sensor source wafer according to claim 13, wherein the sacrificial portion forms a gap between the circuit substrate and the sensor wafer defining at least one tether connecting the circuit substrate to an anchoring portion of the sensor wafer.

15. The multi-element sensor wafer according to claim 13, wherein the magnetic sensor is a Hall sensor, a quantum-well Hall sensor, a magneto-resistive sensor, a giant magneto-resistive sensor, a tunnel magneto-resistive sensor, or wherein the magnetic sensing element comprises graphene.

16. The multi-element sensor wafer according to claim 13, wherein the material of the sensor substrate is a compound semiconductor, a III-V semiconductor, or GaAs, or wherein the semiconductor of the circuit substrate is silicon.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 provides a schematic vertical cross-section of a chip comprising a magnetic sensing element produced in a first technology and an electronic circuit produced in a second technology, in accordance with an embodiment of the present invention.

(2) FIG. 2 illustrates a method as can be used for manufacturing the chip of FIG. 1, according to an embodiment of the present invention.

(3) FIGS. 3(a) to 3(h) illustrate a first series of steps, including the corresponding intermediate products, as part of a method for manufacturing a chip according to an embodiment of the present invention.

(4) FIGS. 4(a) to 4(c) illustrate a second series of steps, including the corresponding intermediate products, as part of a method for manufacturing a chip according to an embodiment of the present invention.

(5) FIGS. 5(a) to 5(c) illustrate a third series of steps, including the corresponding intermediate products, as part of method for manufacturing a chip according to an embodiment of the present invention.

(6) FIG. 6 shows an image of two sensing elements having a plurality of fractured tethers in accordance with embodiments of the present invention.

(7) FIG. 7 shows an image of sensing elements on top of electronic circuits after the corresponding photoresist for RDL definition is patterned, in accordance with embodiments of the present invention.

(8) FIG. 8 shows the same sensing elements as in FIG. 7 after application of a passivation layer after RDL, in accordance with embodiments of the present invention.

(9) The drawings are only schematic and are non-limiting. In the drawings, the size of some of the elements may be exaggerated and not drawn on scale for illustrative purposes.

(10) Any reference signs in the claims shall not be construed as limiting the scope.

(11) In the different drawings, the same reference signs refer to the same or analogous elements.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

(12) The present invention will be described with respect to particular embodiments and with reference to certain drawings but the invention is not limited thereto but only by the claims. The drawings described are only schematic and are non-limiting. In the drawings, the size of some of the elements may be exaggerated and not drawn on scale for illustrative purposes. The dimensions and the relative dimensions do not correspond to actual reductions to practice of the invention.

(13) Furthermore, the terms first, second and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a sequence, either temporally, spatially, in ranking or in any other manner. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments of the invention described herein are capable of operation in other sequences than described or illustrated herein.

(14) Moreover, the terms top, under and the like in the description and the claims are used for descriptive purposes and not necessarily for describing relative positions. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments of the invention described herein are capable of operation in other orientations than described or illustrated herein.

(15) It is to be noticed that the term “comprising”, used in the claims, should not be interpreted as being restricted to the means listed thereafter; it does not exclude other elements or steps. It is thus to be interpreted as specifying the presence of the stated features, integers, steps or components as referred to, but does not preclude the presence or addition of one or more other features, integers, steps or components, or groups thereof. Thus, the scope of the expression “a device comprising means A and B” should not be limited to devices consisting only of components A and B. It means that with respect to the present invention, the only relevant components of the device are A and B.

(16) Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment, but may. Furthermore, the particular features, structures or characteristics may be combined in any suitable manner, as would be apparent to one of ordinary skill in the art from this disclosure, in one or more embodiments.

(17) Similarly it should be appreciated that in the description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. This method of disclosure, however, is not to be interpreted as reflecting an intention that the claimed invention requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.

(18) Furthermore, while some embodiments described herein include some but not other features included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the invention, and form different embodiments, as would be understood by those in the art. For example, in the following claims, any of the claimed embodiments can be used in any combination.

(19) In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the invention may be practiced without these specific details. In other instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.

(20) Where in embodiments of the present invention reference is made to “a technology” or “a semiconductor technology”, reference is made to for example silicon CMOS technology, or to a compound semiconductor technology such as a III-V semiconductor technology (e.g. gallium-arsenide, indium-antimonide, indium-phosphide, gallium-nitride) amongst others. Materials used may be materials with high electron mobilities such as graphene and other two-dimensional materials with high electron mobilities. Technologies used may be magnetoresistive technologies.

(21) Where in embodiments of the present invention reference is made to a first technology, reference is made to a technology which typically processes a first material. Where in embodiments of the present invention reference is made to a second technology, reference is made to a technology which typically processes a second material. The first material is thereby different from the second material in the sense that epitaxial growth from one material on the other material would result in structural mismatch and/or thermal stress between both.

(22) There exist various technologies to sense magnetic fields, which rely on different physical phenomena and different material properties. The most common magnetic field sensors are Hall-effect devices, usually made with semiconductor materials, and sensors using magnetoresistance effect of certain materials or multilayer systems. Although the working principles for these magnetic sensors are different, they can all be characterized by a common parameter called magnetic sensitivity.

(23) While applying a certain electrical stimulus (voltage or current) on the sensor biasing terminals, between the sensing terminals there will be a potential difference that is directly linked to the existing magnetic field. Therefore, the magnetic sensitivity as the ratio between the voltage output of such sensor and the value of the magnetic field applied: S=Vsense/Bapplied. This is expressed normally in mV/mT, but other units can be used as well, such as mV/G or mV/Oe, taking into account that 1 G=0.1 mT and =1 Oe in air.

(24) In a first aspect embodiments of the present invention relate to a multi-element sensor for measuring a magnetic field that includes an integrated circuit element having an electronic circuit formed in a semiconductor circuit substrate. A cured adhesive layer is disposed over the circuit substrate and a magnetic sensing element comprising a sensor substrate having a fractured tether, a top side, and a bottom side opposite the top side, and a magnetic sensor formed on, in, or over the top side of the sensor substrate, is adhered to the adhesive layer with the bottom side. One or more electrical connections are formed at least partly in a conductive distribution layer on the circuit substrate over the electronic circuit, the electrical connections electrically connecting the magnetic sensor to the electronic circuit. The circuit substrate is a separate substrate from the sensor substrate and the material of the circuit substrate comprises a different material than the material of the sensor substrate. This structure enables the use of micro-transfer printing from a variety of different source substrates having different materials and processed under different conditions to be electrically connected and integrated into a heterogeneous component.

(25) Magnetic sensitivity may be enhanced by disposing the magnetic sensing element 110 of the multi-element sensor 100 as close as possible to the desired object or field location to be sensed. By reducing the physical size of the magnetic sensing element 110 in comparison to any controller or processing circuitry and extending the magnetic sensing element 110 from the controller or processing circuitry, for example the electronic circuit 120, the magnetic sensing element 110 can be disposed more readily near the desired location. Thus, in an embodiment of the present invention, and as illustrated in FIG. 1, the magnetic sensing element 110 is smaller than the integrated circuit element or the electronic circuit 120, and covers only a portion of the electronic circuit 120 surface on which the magnetic sensing element 110 is disposed, and extends from a surface of the electronic circuit 120 by a distance of 2 μm or more. This enables the magnetic sensing element 110 to be inserted an effective distance into much smaller spaces and increases the number and configuration of locations in which the multi-element sensor 100 can be used.

(26) The multi-element sensor 100 illustrated in FIG. 1 can be constructed by providing an integrated circuit element formed in a semiconductor circuit substrate that includes the electronic circuit 120. The integrated circuit element, the semiconductor circuit substrate, and the electronic circuit 120 are not distinguished in FIG. 1 but can be different aspects, attributes, or portions of the same structure. Similarly, the magnetic sensing element 110 comprises a sensor substrate having a magnetic sensor formed in or thereon. The circuit substrate is a separate substrate from the sensor substrate and the material of the circuit substrate comprises a different material (e.g., a silicon substrate produced in a first technology and first material) than the material of the sensor substrate (e.g. a compound semiconductor or GaAs produced in a second technology and second material different from the first). The material of the sensor substrate can have a mobility that is higher than the mobility of the semiconductor of the circuit substrate at room temperature. The sensor substrate material can be a compound semiconductor, a III-V semiconductor, or an insulating material; the circuit substrate semiconductor can be silicon.

(27) The sensor substrate can have a top side and a bottom side opposite the top side, where the bottom side is adjacent and adhered to the integrated circuit element. The magnetic sensor can be formed on, in, or over the top side of the sensor substrate and electrically connected on the top side, with the conductive distribution layer 150, for example wires formed on the surface of the magnetic sensor element 110 and the electronic circuit 120, as shown in FIG. 1. In embodiments in which the magnetic sensing element 110 is transfer printed to the electronic circuit 120, the magnetic sensing element 110 can include a broken or separated tether. To enhance the printing process, the adhesive layer can be a photo-sensitive layer, as noted above, that is cured by electromagnetic radiation to form a cured adhesive layer that adheres the magnetic sensing element 110 to the electronic circuit 120.

(28) In an embodiment of the present invention, the magnetic sensing element 110 has a thickness less than or equal to 5 μm or between 2 μm and 5 μm. Because the multi-element sensor 100 can be made in a clean-room integrated circuit fabrication facility with high-resolution photolithographic processing capabilities, the electrical connection can have similar dimensions to the magnetic sensing element 110, for example having a thickness between 1.0 μm and 2.0 μm and a width between 1 μm and 10 μm.

(29) In embodiments of the present invention, the magnetic sensor is a Hall sensor, a quantum-well Hall sensor, a magneto-resistive sensor, a giant magneto-resistive (GMR) sensor, or a tunnel magneto-resistive (TMR) sensor. The magnetic sensing element 110 can comprise graphene.

(30) In a further embodiment of the present invention, the multi-element sensor 100 comprises a ferromagnetic layer on top of the conductive distribution layer 150. In another embodiment, the multi-element sensor 100 includes a passivation layer formed over the magnetic sensor. The passivation layer can provide environmental protection to the magnetic sensor.

(31) In various embodiments of the present invention the multi-element sensor 100 is a surface-mount device or a transfer-printed device having a fractured tether. The magnetic sensing element 110 can further comprise supporting structures made of electrically insulating material situated at least partially on the lateral sides of the sensor substrate. Such supporting structures can desirably insulate and protect the magnetic sensing element 110, for example with respect to the conductive distribution layer 150. The adhesion layer between the magnetic sensing element 110 and the electronic circuit 120 can be chemically bonded to the supporting structures. By chemically bonding the adhesion layer to the supporting structures, a more mechanically robust structure is provided, for example robust in the presence of mechanical vibration. In another embodiment that also provides mechanical strength, the magnetic sensing element 110 can be mechanically joint with the electronic circuit 120 through the adhesion layer present on the electronic circuit 120.

(32) In a second aspect embodiments of the present invention relate to a multi-element sensor wafer. As noted above, the magnetic sensing element 110 can be transfer printed, for example onto the integrated circuit or electronic circuit 120. In a further embodiment, the multi-element sensor 100 can be transfer printed. Transfer printing the multi-element sensor 100 requires a multi-element sensor wafer (e.g., first wafer 130) that includes a plurality of spaced-apart electronic circuits 120 each disposed over a sacrificial portion of the sensor wafer formed in a semiconductor circuit substrate for each electronic circuit 120, an adhesive layer disposed over the electronic circuits 120, and a plurality of magnetic sensing elements 110. Each magnetic sensing element 110 comprises a sensor substrate having a fractured tether, a top side, and a bottom side opposite the top side, and a magnetic sensor formed on, in, or over the top side of the sensor substrate, where the bottom side of the sensor substrate is adhered to the adhesive layer and is disposed over a corresponding electronic circuit. One or more electrical connections are formed at least partly in a conductive distribution layer 150 on the circuit substrate over each electronic circuit 120, the electrical connections electrically connecting the magnetic sensor to the corresponding electronic circuit 120. The circuit substrate is a separate substrate from the sensor substrate and the material of the circuit substrate comprises a different material than the material of the sensor substrate.

(33) In a further embodiment, the sacrificial portion forms a gap between the circuit substrate and the sensor wafer (e.g. silicon wafer) defining a tether connecting the circuit substrate to an anchor portion of the sensor wafer (e.g. silicon wafer).

(34) In other embodiments, the magnetic sensor in the magnetic sensing element 110 on the source wafer over the sacrificial portion is a Hall sensor, a quantum-well Hall sensor, a magneto-resistive sensor, a giant magneto-resistive (GMR) sensor, or a tunnel magneto-resistive (TMR) sensor.

(35) The magnetic sensing element may comprise different materials.

(36) The magnetic sensing element 110 can comprise graphene.

(37) In embodiments of the present invention the magnetic sensing element and/or sensor substrate, only comprises conductive materials (e.g. ferromagnetic materials) and insulating materials (e.g. Si3N4, various oxides).

(38) In embodiments of the present invention the material of the sensor substrate can be a compound semiconductor, a III-V semiconductor, or GaAs. The semiconductor of the circuit substrate can be silicon.

(39) In embodiments of the present invention the magnetic sensing elements may also be a magnetoresistive sensors. Such sensors are sensitive to a field in the plane. Their production requires the magnetization of a layer in one direction (defining the sensitive direction). In such a case transfer printing can allow having multiple sensors with different sensitive directions being those magnetized before being mounted and therefore allowing, for example, the use of standard standalone xMR sensors for multi-axis magnetic fields.

(40) In a third aspect embodiments of the present invention relate to a method of making a multi-element sensor 100. The method comprises providing a magnetic sensing element 110 including a sensor substrate attached by a tether to an anchor portion of a sensor source wafer (e.g., second wafer 310), the sensor substrate having a top side and a bottom side opposite the top side, and a magnetic sensor formed on, in, or over the top side of the sensor substrate. An integrated circuit element comprising an electronic circuit 120 formed in a semiconductor circuit substrate is provided and the electronic circuit 120 is coated with a curable adhesive layer, for example a photo-sensitive layer such as SU8. The magnetic sensing element 110 is micro-transfer printed from the sensor source wafer to the adhesive layer by contacting the magnetic sensing element 110 with a stamp (e.g., conformable transfer element 320), fracturing the tether to adhere the magnetic sensing element 110 to the stamp, and contacting the magnetic sensing element 110 to the adhesive layer. After the micro-transfer printing process, the sensor substrate and the different circuit substrate are both present in the printed structure. The adhesive layer is cured and the magnetic sensor is electrically connected to the electronic circuit 120 with electrical connections to form a conductive distribution layer 150. The sensor wafer can comprise a plurality of magnetic sensor elements 110. The semiconductor substrate may comprise a plurality of integrated circuit elements. The method may further comprise micro-transfer printing the plurality of magnetic sensor elements to a corresponding plurality of the integrated circuit elements.

(41) Part of the source wafer can be transfer printed to several final wafers. By doing that it allows to reduce the cost. The transfer print wafer can be expensive. It can for example be a gallium arsenide wafer which is significantly more expensive than a silicon wafer.

(42) Embodiments of the present invention provide a multi-element sensor also referred to as a multi-element sensor 100 for measuring a magnetic field. The multi-element sensor comprises a magnetic sensing element 110 e.g. for measuring the strength of magnetic field components directed perpendicular or parallel to its upper surface, and an electronic circuit 120 for reading out the measured strength, and optionally for further processing the readout-value. Further processing might include amplification and/or filtering of the signal. It might also include offset reduction, linearization and algebraic combination of several signal channels. Further processing might in general include any signal processing that analog or digital electronics can provide. According to embodiments of the present invention the magnetic sensing element 110 is mounted on the electronic circuit 120 and the magnetic sensing element 110 is electrically connected with the electronic circuit 120. In embodiments of the present invention the electronic circuit 120 is produced in a first technology using a first material (e.g. CMOS technology using silicon substrates).

(43) In embodiments of the present invention the magnetic sensing element 110 is produced in a second technology using a second material. The second technology/second material may be a compound semiconductor technology such as a III-V semiconductor technology (e.g. GaAs, InSb, InGaAs, InGaAsSb, InAs). The magnetic sensing element 110 may for example be a magnetoresistive element, a Hall sensor, or a quantum well Hall sensor. It is thereby an advantage of embodiments of the present invention that the electron mobility in the magnetic sensor 110 is higher than if it would be implemented using the first technology/material.

(44) In an exemplary embodiment of the present invention, the multi-element sensor 100, for measuring a magnetic field, may be used as a compass sensor. It is thereby an advantage that for the magnetic sensing element 110 a technology with a higher carrier mobility is used than the technology which is used for making the electronic circuit 120. The consequence thereof is that a multi-element sensor with a higher sensitivity for a magnetic field can be made which is for example advantageous when it is used as a compass sensor. For example, the carrier mobility in GaAs is 5 times higher (8000 cm.sup.2/Vs) compared to Si (1400 cm.sup.2/Vs). Therefore the sensitivity of a GaAs Hall device is about 5 times higher than the one of a silicon Hall device.

(45) In another exemplary embodiment of the present invention the multi-element sensor 100, for measuring a magnetic field, is used as an electrical current sensor. Thereby the magnetic field around a conductor, generated by an electrical current running through said conductor, is measured. It is an advantage of embodiments of the present invention that the magnetic sensing element 110 is made in a different technology/from a different material than the electronic circuit 120. Thereby the technology/material (e.g. Ga—As) of the magnetic sensing element 110 is chosen such that it has a higher carrier mobility compared to the carrier mobility in the technology/material (e.g. silicium) used for the electronic circuitry 120. This allows to measure currents at a higher frequency than would be the case if the magnetic sensor were implemented in the first technology/first material (e.g. silicium). The first technology can for example be silicon CMOS technology, because this is a highly reliable and cost effective technology.

(46) In embodiments of the present invention the magnetic sensing element 110 is a Hall sensor. In embodiments of the present invention the magnetic sensing element 110 is a quantum well Hall sensor. The quantum Hall sensor might for example be produced in a III-V technology and comprise an gallium-arsenide layer sandwiched between two layers of aluminium-gallium-arsenide. The quantum Hall sensor might alternatively include an indium-gallium arsenide layer sandwiched between two layers of aluminum-gallium arsenide.

(47) In embodiments of the present invention the second material has at least one desired property which cannot be achieved with the first material. In embodiments of the present invention the second material has a higher electron mobility than the first material (e.g. the first material being silicon and the second material being a high electron mobility material such as GaAs, InSb, InAs, InGaAs, InGaAsSb, InP)

(48) In embodiments of the present invention the first material might for example be silicon. Using silicon has the advantage that standard CMOS technology can be used and using gallium-arsenide has the advantage of a higher carrier mobility compared to silicon. In this way the advantages of both technologies can be combined.

(49) In embodiments of the present invention the multi-element sensor 100 comprises a conductive distribution layer 150. This distribution layer 150 makes the electrical connection between the electronic circuit 120 and the magnetic sensing element 110. In embodiments of the present invention the distribution layer has a maximum thickness of 5 μm. The distribution layer may be made of any common metal know in the art of semiconductor wiring such as: Al, AlCu, AlCuSi, W, Cu, Au, Ag, Ti, Mo, amongst others.

(50) In embodiments of the present invention the multi-element sensor 100 further optionally comprises a ferromagnetic layer, also referred to as the integrated magnetic concentrator, on top of the distribution layer 150. Such a layer attracts magnetic field lines, and can be used for increasing the field strength measured by the sensor, hence, to even further increase the sensitivity. The thickness of the ferromagnetic layer may vary between 1 and 50 um, preferably between 10 and 20 um. The size and shape of the ferromagnetic layer may be adapted to the product requirements. For low field use the thickness of the layer is typically large (>200 μm) to exhibit strong magnetic gain. As the sensing element is typically small (<100 μm), the ferromagnetic layer is processed at the end on top of the hybrid sensor. The integrated magnetic concentrator (IMC) may not be directly on top of the magnetic sensing element (e.g. the GaAs Hall plate), since the IMC can be much bigger than the magnetic sensing element itself. In an exemplary embodiment of the present invention a constellation of four magnetic sensing elements (e.g. Hall elements with a size of 30 μm) may be distributed under the edge of an IMC disk of 400 μm size to form the two orthogonal axes for a magnetic angle sensor.

(51) In embodiments of the present invention the multi-element sensor further optionally comprises a magnetic concentrator, also known as IMC (integrated magnetic concentrator). By adding a magnetic concentrator, the density of magnetic field lines at the magnetic sensing element can be increased. This results in an amplification of the magnetic flux density. The IMC may be formed using an electroplating processes, or using micro assembly techniques. The IMC might for example be placed on the multi-element sensor by transfer printing using an elastomer stamp. In an exemplary embodiment of the present invention the IMC is Vitrovac®.

(52) FIG. 1 gives a schematic illustration of a vertical cross-section of a multi-element sensor in accordance with embodiments of the present invention. The figure shows schematically a magnetic sensing element 110 (preferably made of GaAs) and an electronic circuit 120 (preferably made of silicon). In order to simplify the figure the magnetic sensing element 110 and the electronic circuit 120 are only partly shown. Only these parts are shown which are required to demonstrate that the magnetic sensing element 110 is mounted on the electronic circuit 120 and that the magnetic sensing element 110 is electrically connected with the electronic circuit 120. The electrical connection 150 between the magnetic sensing element 110 and the electronic circuit 120 is shown in FIG. 1. The electronic circuit is produced in a first technology and/or first material, and the magnetic sensing element is produced in a second technology and/or second material different from the first technology/material. FIG. 1 also shows a distribution layer 150 in contact with the magnetic sensing element 110 and with the electronic circuit 120. This distribution layer provides an electrical contact between the electronic circuit 120 and the magnetic sensing element 110.

(53) In embodiments of the present invention (not shown) a ferromagnetic layer may optionally be present on top of the distribution layer 150.

(54) Methods 200 according to embodiments of the present invention are used for manufacturing a multi-element sensor 100 for measuring a magnetic field whereby a high mobility magnetic sensor 110 is combined with an electronic circuit 120 produced using different technologies and materials resulting in a multi-element sensor 100. The resulting multi-element sensor 100 is therefore a compound (or hybrid) magnetic sensor 100.

(55) In embodiments of the present invention the high mobility magnetic sensing elements 110 (also referred to as or part of “source devices” implemented on a second wafer 310) are positioned on electronic circuits 120 (also referred to as or part of “target devices” on a first wafer 130) using a technique called “transfer printing” such as for example described in WO2012018997A2.

(56) The electronic circuit 120 may be implemented on a silicon chip on a CMOS wafer. In embodiments of the present invention a compound multi-element sensor 100 comprising a magnetic sensing element 110 and an electronic circuit 120 is realized by transfer printing.

(57) FIG. 2 shows a flow chart illustrating the steps of a method 200 for manufacturing a multi-element sensor for measuring a magnetic field comprising the following steps: a step 205 for manufacturing at least one target device (comprising the electronic circuit 120 magnetic element 110) using a first technology/first material on a first wafer 130, a step 210 for manufacturing at least one source device (comprising a magnetic sensing element 110) using a second technology/second material on a second wafer 310, wherein the carrier mobility of the second material is higher than the carrier mobility of the first material (measured at room temperature), a step 215 for covering at least one landing area, on which the source device is to be mounted, of the target device with an adhesive layer, a step 220 for lifting-off the at least one source device from the second wafer by a conformable transfer element, a step 225 for positioning the at least one source device onto the at least one landing area of the target device, a step 230 for lifting-off the transfer stamp from the at least one source device. a step of connecting 235 the at least one source device electrically to the target device;

(58) The method would normally also include a step of packaging the at least one source device and the at least one target device so as to form the multi-element sensor 100.

(59) Depending on the size and position of the magnetic elements 110 on the source wafer, and the size and the position of the electronic circuits 120 on the target wafer, the steps 220 to 230 for transferring the at least one, usually a plurality of source devices to the target wafer, may have to be repeated multiple times, as indicated by the dotted arrow.

(60) Of course the manufacturing of both wafers in step 205 and 210 may be executed in parallel, or in reverse order.

(61) In embodiments of the present invention the second wafer has a higher carrier mobility than the carrier mobility in the first wafer.

(62) FIG. 3 illustrates different process steps in accordance with an embodiment of the present invention. For each of the process steps the intermediate products are shown. The intermediate products are illustrated by their vertical cross-section.

(63) In embodiments of the present invention the source devices are smaller and therefore the density of the source devices on the second wafer can be made higher than the density of the target devices on the first wafer. In these embodiments the source devices are placed on the target devices in multiple steps. This is illustrated in FIG. 3 wherein the method steps in accordance with an embodiment of the present invention are repeated until all target devices are covered.

(64) In an exemplary embodiment of the present invention the source devices 110 in the second wafer 310 may be Hall plates with a size of a few 10 micrometers. The target devices 120 (e.g. comprising the bonding pads) are made on the first wafer 130 and may have a size of a few 100 micrometers. Therefore the effective number of source devices is at least an order of magnitude higher than for the target devices on the first wafer. The effective number of source devices may be above 100 k, preferably above 1M pieces/wafer. Increasing the density of source devices on the second wafer decreases the wafer cost (e.g. GaAs cost) per source device.

(65) In step 205 shown on the right of FIG. 3(a) the target devices 120 are manufactured on a first wafer 130. This might for example be done through a CMOS process. Such a target device may be an electronic circuit.

(66) In a step 210 shown on the right of FIG. 3(a) the source devices are manufactured on a second wafer 310. This might for example be done through a III-V process (e.g. GaAs). According to embodiments of the present invention the carrier mobility of the source device is higher than the carrier mobility of the target device, measured at room temperature.

(67) In step 215 (not shown) the area of the target device whereon the source device is to be mounted, i.e. the landing area, is covered with an adhesive layer. This step is not illustrated in FIG. 3.

(68) In step 220 shown in FIG. 3(b) to (d), one or more source devices 110 are lifted off from the second wafer 310 by a conformable transfer element 320. In FIG. 3(b) the lowering of the stamp onto the second wafer 310 is illustrated. In FIG. 3(c) the adhesion of the source devices 110 to the transfer stamp 320 is illustrated. In FIG. 3(d) the lift-off of the source devices 110 is illustrated.

(69) In the example illustrated in FIG. 3, the density of the source devices on the second wafer 310 is higher than the density of the target devices on the first wafer 130. Therefore only a selection of source devices is lifted, whereby the selection is such that each selected source device has a target device in a corresponding position. This is illustrated in FIG. 3(d).

(70) In a next step 225, illustrated in FIGS. 3(e) and (f), the source devices 110 are positioned on the landing area of the target devices 120. Therefore they are first transferred to the first wafer 130. This is illustrated in FIG. 3(e). Next they are stamped on the target wafer, as illustrated in FIG. 3(f)

(71) In a next step 230, illustrated in FIG. 3(g), the transfer stamp 320 is lifted off from the source devices, leaving the source devices 110 on the target devices 120. Steps 220, 225, 230 (and optionally also step 215) can be repeated until the desired number of source devices are positioned on the selected target devices. A possible result thereof is shown in FIG. 3(h) showing in the left column one remaining source device 110 and in the right column a source device positioned on each target device 120.

(72) In embodiments of the present invention the method for manufacturing a multi-element sensor 100 for measuring a magnetic field comprises a step 235 for connecting the at least one source device electrically to the target device. In embodiments of the present invention a conductive distribution layer 150, for example in the form of RDL, may be applied to obtain an electrical connection between the at least one source device and the at least one target device.

(73) In embodiments of the present invention a ferromagnetic layer is applied on top of the previously applied conductive distribution layer 150 (not shown). Thereby the conductive distribution layer serves as a base layer for applying the ferromagnetic layer.

(74) In embodiments of the present invention the source devices are manufactured in step 205. The source devices are thereby manufactured with small pads for applying the distribution layer. The area of these pads is smaller than 50 um, preferably smaller than 10 um. It is an advantage of embodiments of the present invention that no big costly pads for bumps or wire bond are required on the source devices, because by doing so, the density of the devices on said wafer can be increased, and hence, more devices can be obtained from said wafer.

(75) In embodiments of the present invention the method 200 comprises a bumping process wherein the conductive distribution layer serves as a redistribution layer for the bumping process.

(76) FIG. 4 illustrates additional method steps and the corresponding intermediate products in accordance with embodiments of the present invention. In FIG. 4(a) a vertical cross-section is shown of a plurality of multi-element sensors wherein each of the multi-element sensors comprises a source device 110 mounted on a target device 120 wherein the target devices are embedded in a first wafer 130.

(77) In embodiments of the present invention the source device 110 is a magnetic sensing element and the target device 120 is an electronic circuit. In a method step 235 in accordance with embodiments of the present invention the source and the target device are electrically connected together. The result thereof is illustrated in FIG. 4(b) wherein a distribution layer 150 is shown which electrically connects the source device 110 to the target device. In a next step, of which the result is illustrated in FIG. 4(c), multi-element sensors 100 singulation is applied by means of a dicing saw.

(78) Additional steps, in accordance with embodiments of the present invention, for manufacturing a multi-element sensor for measuring a magnetic field, are illustrated in FIG. 5. FIG. 5(a) shows a vertical cross-section of a multi-element sensor 100 in accordance with an embodiment of the present invention after assembly of the multi-element sensor onto a leadframe 140. FIG. 5(b) shows the cross-section after adding a bonding connection from the distribution layer 150 to the leadframe 140. In embodiments of the present invention the multi-element sensor 100 is assembled into a plastic package. FIG. 5(c) shows the cross-section of a multi-element sensor 100 encapsulated in a plastic package 510 after plastic packaging of the multi-element sensor 100. By combining the IMC base layer process, the source element to CMOS electrical connection (typically done via the redistribution layer) and the redistribution layer for the bumping or Cu pillars, significant cost savings can be achieved.

(79) FIG. 6 shows an image of two sensing elements 110 having a plurality of fractured tethers 160 in accordance with embodiments of the present invention. In FIG. 6 printed Hall plates are shown before the RDL is formed. The tethers 160 are visible as anchor residues around the contour of the Hall plates.

(80) FIG. 7 shows an image of sensing elements 110 on top of electronic circuits 120 after the corresponding photoresist for RDL definition is patterned. For each Hall plate, there is one tether in correspondence of the four contacts and two additional ones on the right and left edges (one on the left edge and one on the right edge).

(81) FIG. 8 shows the same sensing elements as in FIG. 7 after application of a passivation layer after RDL. The tethers 160 are visible in the yellow circles as a morphological effect on the metal, due to tether presence below. The lateral tethers are not visible in this case because of the passivation layer that is applied after RDL, having similar optical properties as the tether material—therefore being seen as one.

(82) Compound magnetic field sensors according to embodiments of the present may be used for example as position sensors, rotary speed sensors, current sensors or compass sensors.