Integrated circuit with resurf region biasing under buried insulator layers

Abstract

Complementary high-voltage bipolar transistors in silicon-on-insulator (SC) integrated circuits is disclosed. In one disclosed embodiment, a collector region is formed in an epitaxial silicon layer disposed over a buried insulator layer. A base region and an emitter are disposed over the collector region. An n-type region is formed under the buried insulator layer (BOX) by implanting donor impurity through the active region of substrate and BOX into a p-substrate. Later in the process flow this n-type region is connected from the top by doped poly-silicon plug and is biased at Vcc. In this case it will deplete lateral portion of PNP collector region and hence, will increase its BV.

Claims

1. An integrated circuit structure including both NPN and PNP high voltage transistors, comprising: complementary PNP and NPN structures, comprising: an n-type region; active PNP and NPN device regions; a buried insulator layer (BOX) that lies therebetween, touches, and electrically isolates the n-type region from the active PNP and NPN device regions; wherein both the n-type region and the active PNP and NPN device regions are implemented with single-crystal silicon; another n-type region is included under the buried insulator layer BOX of the PNP structure; a p-type region is included under the buried insulator layer BOX of the NPN structure.

2. The integrated circuit structure including both NPN and PNP high voltage transistors of claim 1, wherein the PNP further comprises: a first masking and implant to implant a highly doped n-layer under BOX in PNP area, wherein the highly doped n-layer is vertically under the PNP area and extends toward an n-type poly-silicon plug, wherein it couples to the plug; a second masking and implant step performed after Pad Oxidation, before Nitride deposition to create a uniform collector doping level in the active device region; a third masking and etching step is accomplished to provide a hard mask for defining a region for deposition of a shallow trench insulation layer STI in the active device region; deep trenches formed, to encircle the NPN transistor and the n-type poly-silicon plug, wherein the trenches extend from the top of the die to the bottom of the BOX and the n-type poly-silicon plug extends from the top of the die to and through the BOX, extending into the highly doped n-layer under the BOX, wherein the n-type poly-silicon plug touches the implanted n-layer under the BOX and extends to the top of die providing a top contact to the implanted n-layer; a base epitaxial semiconductor layer deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region with a base contact 111 coupled thereto; and an emitter region covers a portion of the base epitaxial semiconductor layer, wherein the emitter region is highly doped with the same conductivity type as the active device region.

3. The integrated circuit structure including both NPN and PNP high voltage transistors of claim 1, wherein the active device region on top of the BOX layer is implanted with a uniform accepter collector doping between 3e14-3e16 1/cm3.

4. The integrated circuit structure including both NPN and PNP high voltage transistors of claim 2, wherein the highly doped n-layer implanted under the BOX in the PNP area with a doping level of the approximately 1e17 1/cm3.

5. The integrated circuit structure including both NPN and PNP high voltage transistors of claim 2, wherein the highly doped n-layer implanted under the BOX in the PNP area is implanted to a depth of 1.5-2.0 micrometer under the BOX.

6. The integrated circuit structure including both NPN and PNP high voltage transistors of claim 2, wherein the NPN further comprises: a first masking and implant to implant a highly doped p-layer under BOX in NPN area, wherein the highly doped p-layer is vertically under the NPN area and extends toward a p-type poly-silicon plug, wherein it couples to the plug; a second new masking and implant step performed after Pad Oxidation, before Nitride deposition to create a uniform collector doping level in the active device region; a third masking and etching step is accomplished to provide a hard mask for defining a region for deposition of a shallow trench insulation layer STI in the active device region; deep trenches formed, to encircle the NPN transistor and the p-type poly-silicon plug, wherein the trenches extend from the top of the die to the bottom of the BOX and the p-type poly-silicon plug extends from the top of the die to and through the BOX, extending into the p-layer under the BOX, wherein the p-type poly-silicon plug touches the p-layer under the BOX and extends to the top of die providing a top contact to the p-layer; a base epitaxial semiconductor layer deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region with a base contact 111 coupled thereto; and an emitter region covers a portion of the base epitaxial semiconductor layer, wherein the emitter region is highly doped with the same conductivity type as the active device region.

7. The integrated circuit structure including both NPN and PNP high voltage transistors of claim 6, wherein the active device region on top of the BOX layer is implanted with a uniform donor collector doping between 3e14-3e16 1/cm3.

8. The integrated circuit structure including both NPN and PNP high voltage transistors of claim 6, wherein the highly doped p-layer implanted under the BOX in the NPN area with a doping level of the approximately 1e17 1/cm3.

9. The integrated circuit structure including both NPN and PNP high voltage transistors of claim 5, wherein the highly doped n-layer implanted under the BOX in the NPN area is implanted to a depth of 1.5-2.0 micrometer under the BOX.

10. The integrated circuit structure including both NPN and PNP high voltage transistors of claim 1, wherein n-type region included under the buried insulator layer BOX of the PNP and the p-type region included under the NPN are connected the top of the wafer by doped poly-silicon plugs and are biased at Vcc and GND respectively, in this case it will deplete lateral portions of both the PNP and NPN collector regions and hence, will increase their BVs.

11. A method of making an integrated circuit structure including both NPN and PNP high voltage transistors, comprising: forming complementary PNP and NPN structures, —comprising: an n-type region; active PNP and NPN device regions; a buried insulator layer (BOX) that lies therebetween, touches, and electrically isolates the n-type region from the active PNP and NPN device regions; wherein both the n-type region and the active PNP and NPN device regions are implemented with single-crystal silicon; another n-type region is included under the buried insulator layer BOX of the PNP structure; a p-type region is included under the buried insulator layer BOX of the NPN structure.

12. The method of claim 11, wherein the PNP further comprises: a first masking and implant to implant a highly doped n-layer under BOX in PNP area, wherein the highly doped n-layer is vertically under the PNP area and extends toward an n-type poly-silicon plug, wherein it couples to the plug; a second masking and implant step performed after Pad Oxidation, before Nitride deposition to create a uniform collector doping level in the active device region; a third masking and etching step is accomplished to provide a hard mask for defining a region for deposition of a shallow trench insulation layer STI in the active device region; deep trenches formed, to encircle the NPN transistor and the n-type poly-silicon plug, wherein the trenches extend from the top of the die to the bottom of the BOX and the n-type poly-silicon plug extends from the top of the die to and through the BOX, extending into the highly doped n-layer under the BOX, wherein the n-type poly-silicon plug touches the implanted n-layer under the BOX and extends to the top of die providing a top contact to the implanted n-layer; a base epitaxial semiconductor layer deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region with a base contact 111 coupled thereto; and an emitter region covers a portion of the base epitaxial semiconductor layer, wherein the emitter region is highly doped with the same conductivity type as the active device region.

13. The method of claim 11, wherein the active device region on top of the BOX layer is implanted with a uniform accepter collector doping between 3e14-3e16 1/cm3.

14. The method of claim 12, wherein the highly doped p-layer implanted under the BOX in the PNP area with a doping level of the approximately 1e17 1/cm3.

15. The method of claim 12, wherein the highly doped n-layer implanted under the BOX in the PNP area is implanted to a depth of 1.5-2.0 micrometer under the BOX.

16. The method of claim 12, wherein the NPN further comprises: a first masking and implant to implant a highly doped p-layer under BOX in NPN area, wherein the highly doped p-layer is vertically under the NPN area and extends toward a p-type poly-silicon plug, wherein it couples to the plug; a second new masking and implant step performed after Pad Oxidation, before Nitride deposition to create a uniform collector doping level in the active device region; a third masking and etching step is accomplished to provide a hard mask for defining a region for deposition of a shallow trench insulation layer STI in the active device region; deep trenches formed, to encircle the NPN transistor and the p-type poly-silicon plug, wherein the trenches extend from the top of the die to the bottom of the BOX and the p-type poly-silicon plug extends from the top of the die to and through the BOX, extending into the p-layer under the BOX, wherein the p-type poly-silicon plug touches the p-layer under the BOX and extends to the top of die providing a top contact to the p-layer; a base epitaxial semiconductor layer deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region with a base contact 111 coupled thereto; and an emitter region covers a portion of the base epitaxial semiconductor layer, wherein the emitter region is highly doped with the same conductivity type as the active device region.

17. The method of claim 16, wherein the active device region on top of the BOX layer is implanted with a uniform donor collector doping between 3e14-3e16 1/cm3.

18. The method of claim 16, wherein the highly doped p-layer implanted under the BOX in the NPN area with a doping level of the approximately 1e17 1/cm3.

19. The method of claim 15, wherein the highly doped n-layer implanted under the BOX in the NPN area is implanted to a depth of 1.5-2.0 micrometer under the BOX.

20. The method of claim 11, wherein n-type region included under the buried insulator layer BOX of the PNP and the p-type region included under the NPN are connected the top of the wafer by doped poly-silicon plugs and are biased at Vcc and GND respectively, in this case it will deplete lateral portions of both the PNP and NPN collector regions and hence, will increase their BVs.

Description

DESCRIPTION OF THE VIEWS OF THE DRAWING

(1) FIG. 1 illustrates a cross-section of an embodiment of the present disclosure,

(2) FIG. 1A illustrates an enlarged portion of FIG. 1 detailing the NPN transistor.

(3) FIG. 1B illustrates an enlarged portion of FIG. 1 detailing the PNP transistor.

(4) FIG. 2 illustrates a cross-section of another embodiment of the present disclosure.

(5) FIG. 2A illustrates an enlarged portion of FIG. 2 detailing the NPN transistor.

(6) FIG. 2B illustrates an enlarged portion of FIG. 2 detailing the PNP transistor.

(7) FIG. 3 illustrates the calculated dependencies of BV.sub.CER on structures with resurf and structures including resurf.

(8) In the drawings, like reference numerals are sometimes used to designate like structural elements. It should also be appreciated that the depictions in the figures are diagrammatic and not to scale.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

(9) The present disclosure is described with reference to the attached figures. The figures are not drawn to scale and they are provided merely to illustrate the disclosure. Several aspects of the disclosure are described below with reference to example applications for illustration. It should be understood that numerous specific details, relationships, and methods are set forth to provide an understanding of the disclosure. One skilled in the relevant an, however, will readily recognize that the disclosure can be practiced without one or more of the specific details or with other methods. In other instances, well-known structures or operations are not shown in detail to avoid obscuring the disclosure. The present disclosure is not limited by the illustrated ordering of acts or events, as some acts may occur in different orders and/or concurrently with other acts or events. Furthermore, not all illustrated acts or events are required to implement a methodology in accordance with the present disclosure.

(10) In an embodiment of the present disclosure is shown in FIGS. 1-4B, the complementary PNP 100 and NPN 200 structures include an SOT semiconductor structure having au p-type region 101, active device regions 104 and 204 respectively, and a buried insulator layer (BOX) 103 that lies therebetween, touches, and electrically isolates p-type region 101 from the active device regions 104 and 204. The initial doping level of the active device regions 104 and 204 can be n-type, ˜1e14 1/cm3. In the present example, both the p-type region 101 and the active device regions 104 and 204 are implemented with single-crystal silicon. To create a structure that has higher PNP BV, an it-type region 106 is included under the buried insulator layer (BOX) of the PNP transistor 100, by implanting donor impurities with dose of about 1e13 to 1e14 1/cm2 through the active device region of the SOI wafer and BOX 103 (1.5-2 um in total) into p-type region 101. Later in the process flow this n-type region 106 and the p-type regions 101 are connected from the top by doped poly-silicon plugs and are biased at Vcc and GND respectively. Since the substrate is p-type material, GND can be applied to either the p-type region 101 or the top contact GND. In this case it will deplete lateral portions of both the PNP and NPN collector regions and hence, will increase their BVs.

(11) The structure providing a PNP transistor 100 with a higher BV (FIG. 1B) is described below.

(12) First an SOI wafer is provided as described in the present disclosure as shown in FIGS. 1-1B.

(13) Next, a first masking and implant step is accomplished to create a highly (˜1e17 1/cm3) doped n-layer 106 under BOX 103 in PNP area. The highly doped n-layer 106 is vertically under the PNP area and extends toward an n-type poly-silicon plug 110 and couples to that plug.

(14) A second masking and implant step after Pad Oxidation, before Nitride deposition is performed to create a uniform collector doping between 3e14-3e16 1/cm3 in active device region 104.

(15) A third masking and etching step is accomplished to provide a hard mask for defining and for deposition of an insulator layer STI 105 in the active device region 104.

(16) Deep trenches 109 are formed to encircle the PNP transistor 100 and the n-type poly-silicon plug 110. The trenches extend from the top of the die to the bottom of the BOX 103 and the n-type poly-silicon plug extends from the top of the die to and through the BOX 103 extending into the highly doped p-layer 106 under the BOX 103, wherein the n-type poly-silicon plug touches the implanted n-layer under the BOX 103 and extends to the top of die providing a top contact to the implanted n-layer.

(17) A base epitaxial semiconductor layer 113 is deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region 104 with base contacts 111 coupled thereto.

(18) And finally, an emitter region 108 covers a portion of the base epitaxial semiconductor layer 113, wherein the emitter region 108 is highly doped with the same conductivity type as the active device region 104.

(19) The structure providing an NPN transistor 200 with a high BV FIG. 1A is described below.

(20) First an SOI wafer is provided as described in the present disclosure as shown in FIGS. 1-1B.

(21) A first masking and implant step after Pad Oxidation, before Nitride deposition is performed to create a uniform collector doping between 3e14-3e16 1/cm3 in active device region 204.

(22) A second masking and etching step is accomplished to provide a hard mask for defining and to for deposition of an insulator layer STI 105 in the active device region 204.

(23) Deep trenches 109 are formed, to encircle the NPN 200 transistor and the p-type poly silicon plug 210. The trenches extend from the top of the die to the bottom of the BOX 103 and the p-type poly-silicon plug extends from the top of the die to and through the BOX 103 extending into the p-layer 101 under the BOX 103, wherein the p-type poly-silicon plug touches the player under the BOX 103 and extends to the top of die providing a top contact to the p-layer 101.

(24) A base epitaxial semiconductor layer 213 is deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region 204 with base contacts 211 coupled thereto.

(25) And finally an emitter region 208 covers a portion of the base epitaxial semiconductor layer 213, wherein the emitter region 208 is highly doped with the same conductivity type as the first epitaxial layer 204.

(26) The base epitaxial semiconductor for the NPN and the PNP can be either SiGe or silicon. The base epitaxial semiconductor can also be deposited in two operations, one for the NPN and one for the PNP.

(27) In another embodiment of the present disclosure is shown in FIGS. 2-2B, the complementary PNP 300 and NPN 400 structures include an SOI semiconductor structure having a a n-type region 301, active device regions 104 and 204 respectively, and a buried insulator layer (BOX) 103 that lies between, touches, and electrically isolates n-type region 301 from the active device regions 104 and 204. The initial doping level of the active device regions 104 and 204 can be n-type, ˜1e14 1/cm3. In the present example, both the n-type region 301 and the active device regions 104 and 204 are implemented with single-crystal silicon. To create a structure that has higher PNP BV, an n-type region 106 is included under a buried insulator layer (BOX) 103 of the PNP 300 transistor, by implanting donor impurity of about 2e15 to 1e17 through the active device region of the SOI wafer and BOX 103 (1.5-2 um in total) into n-type region 301. In addition, a structure that yields higher NPN 400 BV, includes p-type region 406 under the buried insulator layer (BOX) 103 of the NPN transistor, by implanting accepter impurities of about 2e15 to 1e17 through the active device region 204 of the SOI wafer and BOX 103 (1.5-2 um in total) into n-type region 301. Later in the process flow, the n-type region 106 and the p-type regions 406 are connected from the top by doped poly-silicon plugs and are biased at Vcc and GND respectively. Since the substrate is n-type material, Vcc can be applied to either the n-type region 301 or the top contact Vcc. In this case it will deplete lateral portions of both the PNP and NPN collector regions and hence, will increase their BVs.

(28) The structure providing a PNP transistor 300 with a higher BV FIG. 2B is described below.

(29) First an SOI wafer is provided as described in the present disclosure as shown in FIGS. 2-2B.

(30) Next, a first masking and implant step is accomplished to create a highly (˜1e17 1/cm3) doped n-layer 106 under BOX 103 in PNP area. The highly doped n-layer 106 is vertically under the PNP area and extends toward an n-type poly-silicon plug 110 and couples to that plug.

(31) A second new masking and implant step after Pad Oxidation, before Nitride deposition is performed to create a uniform collector doping between 3e14-3e16 1/cm3 in active device region 104.

(32) A third masking and etching step is accomplished to provide a hard mask for defining and to for deposition of a shallow trench insulation layer STI 105 in the active device region 104.

(33) Deep trenches 109 are formed to encircle the PNP transistor 300 and the n-type poly-silicon plug 110. The trenches extend from the top of the die to the bottom of the BOX 103 and the n-type poly-silicon plug 110 extends from the top of the die to and through the BOX 103 extending into the highly doped n-layer 106 under the BOX 103, wherein the n-type poly-silicon plug 110 touches the implanted n-layer under the BOX 103 and extends to the top of die providing a top contact to the implanted n-layer 106.

(34) A base epitaxial semiconductor layer 113 is deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region 104 with a base contact 111 coupled thereto.

(35) And finally an emitter region 108 covers a portion of the base epitaxial semiconductor layer 113, wherein the emitter region 108 is highly doped with the same conductivity type as the first epitaxial layer 104.

(36) The structure providing an NPN transistor 400 with a high BV FIG. 1B is described below.

(37) First an SOI wafer is provided as described in the present disclosure as shown in FIGS. 2-2B.

(38) Next, a first masking and implant step is accomplished to create a highly (˜1e17 1/cm3) doped player 406 under BOX 103 in NPN area. The highly doped p-layer 106 is vertically under the NPN area and extends toward a p-type poly-silicon plug 210 and couples to that plug.

(39) A second new masking and implant step after Pad Oxidation, before Nitride deposition is performed to create a uniform collector doping between 3e14-3e16 1/cm3 in active device region 204.

(40) A Third masking and etching step is accomplished to provide a hard mask for defining and to for deposition of an insulator layer STI 105 in the active device region 204.

(41) Deep trenches 109 are formed, to encircle the NPN 400 transistor and the p-type poly-silicon plug 210. The trenches extend from the top of the die to the bottom of the BOX 103 and the p-type poly-silicon plug 210 extends from the top of the die to and through the BOX 103 extending into the highly doped p-layer 406 under the BOX 103, wherein the p-type poly-silicon plug 210 touches the implanted p-layer 406 under the BOX 103 and extends to the top of die providing a top contact to the implanted p-layer 406.

(42) A base epitaxial semiconductor layer 213 is deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region 204 with base contacts 211 coupled thereto.

(43) And finally an emitter region 208 covers a portion of the base epitaxial semiconductor layer 213, wherein the emitter region 208 is highly doped with the same conductivity type as the first epitaxial layer 204.

(44) The base epitaxial semiconductor for the NPN and the PNP can be either SiGe or silicon. The base epitaxial semiconductor can also be deposited in two operations, one for the NPN and one for the PNP.

(45) FIG. 3 shows the dependencies of BV.sub.CER f.sub.T on the resurf n-layer. Calculated dependences of BV.sub.CER (solid lines) and f.sub.Tpeak at V.sub.CE=10V (dashed lines) for PNP with lateral collector with (diamonds) and without (triangles) resurf N-layer. Note that without N-region, PNP BV saturates at ˜38V while with N-region it goes beyond 100V.

(46) While various embodiments of the present disclosure have been described above, it should be understood that they have been presented by way of example only and not limitation. Numerous changes to the disclosed embodiments can be made in accordance with the disclosure herein without departing from the spirit or scope of the disclosure. Thus, the breadth and scope of the present disclosure should not be limited by any of the above described embodiments. Rather, the scope of the disclosure should be defined in accordance with the following claims and their equivalents.