Method for Producing a Buried Interconnect Rail of an Integrated Circuit Chip

Abstract

A method includes forming a trench in a semiconductor layer of a device wafer and depositing a liner on the trench sidewalls. The liner is removed from the trench bottom, and the trench is deepened anisotropically to form an extension fully along the trench, or locally by applying a mask. The semiconductor material is removed outwardly from the extension by etching to create a cavity wider than the trench and below the liner. A space formed by the trench and cavity is filled with electrically conductive material to form a buried interconnect rail comprising a narrow portion in the trench and a wider portion in the cavity. The wider portion can be contacted by a TSV connection, enabling a contact area between the connection and buried rail. The etching forms a wider rail portion at a location remote from active devices formed on the front surface of the semiconductor layer.

Claims

1. A method for producing a buried interconnect rail of an integrated circuit chip, the method comprising: providing a device wafer comprising a semiconductor layer on top, the semiconductor layer having a front surface and a back surface, and further comprising a dielectric layer on at least one or more parts of the front surface of the semiconductor layer; producing a trench in the semiconductor layer or through the dielectric layer and into the semiconductor layer; producing a dielectric liner on inner surfaces of the trench; removing the dielectric liner from a bottom of the trench or from one or more parts of the bottom of the trench, the one or more parts being determined by producing a mask having one or more openings corresponding to the one or more parts, while maintaining the dielectric liner on sidewalls of the trench; applying an etch process that is selective with respect to the dielectric liner or with respect to the dielectric liner and the mask, thereby creating at least one cavity extending downward and laterally outward from the bottom of the trench or from each of the one or more parts of the bottom of the trench; and filling the at least one cavity and the trench with an electrically conductive material to thereby form the buried interconnect rail, the buried interconnect rail comprising a narrow portion inside the trench and at least one wider portion inside the at least one cavity.

2. The method according to claim 1, wherein: the etch process is an isotropic etch process, and the at least one cavity has a spherical shape or a diamond shape, as seen in a cross section oriented perpendicularly with respect to a longitudinal direction of the trench.

3. The method according to claim 1, wherein: the etch process is an atomic layer etch process, and the at least one cavity has a rectangular shape, as seen in a cross section oriented perpendicularly with respect to a longitudinal direction of the trench.

4. The method according to claim 1, further comprising: deepening the bottom of the trench or the one or more parts of the bottom of the trench while maintaining the dielectric liner on the sidewalls of the trench, thereby creating one or more extensions of the trench, wherein: no liner is present on the sidewalls of the one or more extensions, and the etch process for creating the at least one cavity is applied after creating the one or more extensions.

5. The method according to claim 4, wherein: the etch process is an isotropic etch process, and the at least one cavity has a spherical shape or a diamond shape, as seen in a cross section oriented perpendicularly with respect to a longitudinal direction of the trench.

6. The method according to claim 4, wherein: the etch process is an atomic layer etch process, and the at least one cavity has a rectangular shape, as seen in a cross section oriented perpendicularly with respect to a longitudinal direction of the trench.

7. The method according to claim 1, further comprising: thinning the device wafer until the back surface of the semiconductor layer is exposed and producing a via opening through the back surface, the via opening being wider than the narrow portion of the buried interconnect rail and fully overlapping the narrow portion so that the via opening also overlaps at least part of the wider portion of the buried interconnect rail, and filling the via opening with an electrically conductive material, thereby forming a through-silicon via (TSV) connection that contacts one of the at least one wider portion of the buried interconnect rail.

8. The method according to claim 7, wherein: filling the trench and the at least one cavity results in an appearance of a void in a center of the at least one wider portion of the buried interconnect rail, after forming the via opening, the wider portion of the buried interconnect rail is partially removed until a part of an inner surface of the void is exposed, and the TSV connection is formed by filling the part of the inner surface of the void and by filling the via opening with the electrically conductive material.

9. The method according to claim 1, wherein: the dielectric liner includes a first dielectric liner, and a second dielectric liner is deposited on the first dielectric liner and on an inner surface of the at least one cavity, before filling the cavity and the trench with the electrically conductive material.

10. The method according to claim 1, wherein the dielectric liner is removed from the sidewalls of the trench, before filling the trench and the cavity.

11. The method according to claim 10, wherein a second dielectric liner is deposited on the sidewalls of the trench and on an inner surface of the at least one cavity, before filling the cavity and the trench with the electrically conductive material.

12. A microstructure including a semiconductor layer having a front surface and a back surface, the semiconductor layer including on its front surface a plurality of semiconductor devices, the microstructure comprising: a plurality of interconnect rails buried at least partially in the semiconductor layer; and a plurality of through-silicon via (TSV) connections from the back surface of the semiconductor layer to the interconnect rails, wherein: the plurality of interconnect rails includes a narrow portion of each interconnect rail at a side nearest to the front surface of the semiconductor layer and at least one wider portion at a side nearest to the back surface of the semiconductor layer; a dielectric liner is formed between sidewalls of the narrow portion of each interconnect rail and the semiconductor layer; the at least one wider portion is located essentially below the dielectric liner, when the front surface of the semiconductor layer faces upwards; the TSV connections are wider than the narrow portion of each interconnect rail and fully overlap the narrow portion of each interconnect rail; and the TSV connections are in physical contact with one or more of the wider portions of the interconnect rails.

13. An integrated circuit chip comprising a microstructure in accordance with claim 12.

14. The microstructure according to claim 12, wherein: the at least one wider portion located essentially below the dielectric liner includes a respective portion that extends above a lower edge of the dielectric liner, and the dielectric liner has a first height, a portion of the dielectric liner extending into the wider portion has a second height, and the second height is less than or equal to ten percent of the first height.

15. The microstructure according to claim 12, wherein the at least one wider portion located essentially below the dielectric liner is entirely below a lower edge of the dielectric liner.

16. The microstructure according to claim 12, wherein the dielectric liner includes a first dielectric liner and a second dielectric liner.

17. The microstructure according to claim 12, wherein each interconnect rail includes an electrically conductive material disposed within a respective narrow portion and a respective wider portion within the interconnect rail.

18. The microstructure according to claim 12, wherein: each TSV connection is formed at a via opening extending from the back surface of the semiconductor layer, and another dielectric liner is produced on a sidewall of the via opening.

19. The microstructure according to claim 18, wherein an electrically conductive material is disposed within the via opening.

20. The microstructure according to claim 12, wherein a cross section of at least one wider portion has a circular shape, a rectangular shape, or a diamond shape.

Description

BRIEF DESCRIPTION OF THE FIGURES

[0020] The above, as well as additional, features will be better understood through the following illustrative and non-limiting detailed description of example embodiments, with reference to the appended drawings.

[0021] FIG. 1 shows a section view of a portion of a device wafer comprising p-type fins and n-type fins, and onto which one or more example embodiments can be applied.

[0022] FIG. 2a, FIG. 2b, FIG. 2c, FIG. 2d, FIG. 2e, FIG. 2f, FIG. 2g, FIG. 2h, FIG. 2i, FIG. 2j, FIG. 2k, FIG. 2l, FIG. 2m, and FIG. 2n illustrate functions corresponding to a method in accordance with the example embodiments.

[0023] FIG. 3 and FIG. 4 illustrate different possible end results of an isotropic etch process used for creating a spherical cavity in a silicon (Si) layer of a device wafer in accordance with the example embodiments.

[0024] FIG. 5a and FIG. 5b show an alternative shape of a cavity by using a different etch process in accordance with the example embodiments.

[0025] FIG. 6a, FIG. 6b, FIG. 7a, FIG. 7b, FIG. 8a, FIG. 8b, FIG. 9a, FIG. 9b, FIG. 10a, FIG. 10b, FIG. 11a, FIG. 11b, FIG. 12a, and FIG. 12b illustrate functions of example embodiments in which an isotropic etch process is applied locally and not along an entire length of a trench formed for producing a buried power rail.

[0026] FIG. 13a, FIG. 13b, FIG. 13c, FIG. 13d, and FIG. 13e illustrate aspects of example embodiments applicable to forming a void at the center of the conductive material that fills a cavity.

[0027] FIG. 14 is a flowchart showing functions of methods in accordance with the example embodiments.

[0028] All the figures are schematic, not necessarily to scale, and generally only show parts which are necessary to elucidate example embodiments, wherein other parts may be omitted or merely suggested.

DETAILED DESCRIPTION

I. Introduction

[0029] Example embodiments will now be described more fully hereinafter with reference to the accompanying drawings. That which is encompassed by the claims can, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided by way of example. Furthermore, like numbers refer to the same or similar elements or components throughout.

[0030] In the following detailed description, at least some of the example embodiments in the form of a method are described with respect to producing an integrated circuit chip comprising a CMOS layout of fin field-effect transistors (finFETs) arranged in standard cells on a semiconductor substrate and supplied with power from the back side of the chip through nTSVs and buried power rails. However, the example embodiments are not limited to these particulars. Instead of fin-based active devices, the active devices can be planar devices or nano-sheet based devices. The rails are not limited to power supply rails, but can be any other type of interconnect rail. Any reference to materials used for the various layers and areas that will be described is merely intended as an example of suitable materials, and is not to be understood as a limitation of the scope of the example embodiments.

II. Example Structure

[0031] FIG. 1 shows a small portion of a device wafer (e.g., a wafer onto which active devices of several IC chips are to be processed), comprising a monocrystalline silicon (Si) layer 1, into which a number of fins 2 and 2′ have been produced by a known lithography and etch technique, applying etch masks 3. The width of the fins can be in the order of 10 nm or less. The two different types of hatching indicate different doping types (referred to also by respective references 2 and 2′), typically p-type and n-type doping. This layout is typically used for producing P-channel metal-oxide semiconductor (pMOS) and N-channel metal-oxide semiconductor (nMOS) transistors arranged in multiple standard cells. In this example, the layout comprises regularly spaced pairs of fins arranged in alternate groups of four p-type fins 2 and four n-type fins 2′.

[0032] The Si layer 1 is a monocrystalline top layer of a multi-layer device wafer comprising a base wafer 5, typically a Si wafer, and a thin etch stop layer 6, which can be a silicon-germanium (SiGe) layer. The Si layer 1 (including the fins) can have a thickness less than 1 μm, for example about 500 nm. The etch stop layer 6 can be a SiGe layer of about 50 nm thick, for example. Its function as an etch stop layer is to stop the etching of the base wafer 5 from the back side, as will be explained later in this description. The SiGe layer 6 and the monocrystalline Si layer 1 can be produced on a Si base wafer 5 by techniques well known in the art, for example, by epitaxial growth methods. An alternative would be to use a silicon-on-insulator (SOI) wafer, wherein the insulator layer plays the part of etch stop layer later in the process. The fins 2, 2′ are embedded in a layer 7 of dielectric material. Typically this is a layer of silicon oxide (SiO.sub.2), also referred to as “shallow trench isolation” (STI) oxide. We will hereafter refer to this layer as the STI layer 7. The STI layer 7 is planarized to the level of the etch masks 3, by a planarization technique known as such in the art, including for example one or more CMP (chemical mechanical polishing) steps.

[0033] FIG. 2a is an enlarged image of one p-type area of the Si layer 1, including two pairs of p-type fins 2. Aspects pertaining to a method for producing a buried power rail in the area between these two pairs of fins will now be described in more detail. It is to be understood that the functions described hereafter are performed simultaneously between all pairs of p-type fins 2 and between all pairs of n-type fins 2′ across a given area of the device wafer.

[0034] As shown in FIG. 2b, a trench 10 having essentially parallel sidewalls is formed in the device wafer, extending through the STI layer 7 and into the bulk of the Si layer 1. This can be done by lithography and etching, using an etch recipe or a combination of different recipes suitable for obtaining this shape of the trench 10 through the STI material 7 and the silicon 1. Suitable lithography processes and etch recipes of this type are well known in the art and therefore not described here in detail. The trench 10 can, for example, have a width W of about 20 nm. The length of the trench in the direction perpendicular to the drawing is chosen in accordance with a particular layout of active devices that are to be processed on the fins.

[0035] As illustrated in FIG. 2c, a dielectric liner 11 is then deposited on the bottom and sidewalls of the trench and on the upper surface of the device wafer (e.g., on the planarized surface of the STI dielectric 7 and the etch masks 3). The liner 11 can for example be a layer of silicon oxide or silicon nitride or silicon oxycarbide (SiCO) of a few nanometers thick, deposited for example by atomic layer deposition (ALD).

[0036] As shown in FIG. 2d, the liner 11 is then removed from the bottom of the trench 10 and from the upper surface of the device wafer, while maintaining the liner on the sidewalls of the trench 10. As known in the art, this can be done by a plasma etch process as described for example in document EP3035369A1.

[0037] Next, referring to FIG. 2e, in accordance with at least some embodiments, the trench 10 is then further deepened, while maintaining the liner 11 on the sidewalls. This can be done by an etch recipe that removes Si anisotropically with respect to the liner material. An extension 12 of the trench is thereby created having a depth D. As an example, the depth can be in the order of 20-30 nm with no liner present on the sidewalls of the extension 12. The depth of the extension 12 is however not limited to any specific value, and can depend on the selectivity of the etch process subsequently applied (examples of which are described below). In accordance with at least some other embodiments, the trench 10 is not further deepened such that the extension 12 is not formed.

[0038] After this, another etch process is applied that removes Si starting from the inside of the extension 12 or from the bottom of the trench 10 when no extension 12 is formed. The removal is not aligned to the sidewalls of the trench 10, but proceeds downward and laterally outward from the bottom of the trench 10 (e.g., the bottom of the trench before forming the extension 12). This etch process is selective with respect to the liner material, e.g., the Si is etched at a considerably faster rate than the liner 11.

[0039] Next, FIG. 2f illustrates the result of an isotropic etch process (e.g., a process that proceeds in three dimensions) that removes the Si of the bulk portion so that a cavity 13 is formed having an essentially spherical or circular cross-section as seen in a plane perpendicular to the longitudinal direction of the trench. The fact that the etch process is selective with respect to the liner material implicitly means that the cavity 13 is formed essentially below the liner 11 when the etch process is stopped, the term “below” being applicable when the device wafer is oriented horizontally with the front surface of the semiconductor layer facing upwards. FIG. 2f shows the theoretical case where the etch selectivity is 100% exclusive (e.g., the liner is not etched) and where the spherical shape of the cavity 13 is obtained when the upper rim of the cavity 13 coincides with the lower rim of the liner 11. In reality, the etch selectivity may not be 100% exclusive and the desired spherical shape may not be reached until the etch process progresses a little further than the outer rim of the liner 11, depending on the etch rate that is applicable using a given etch chemistry.

[0040] Next, FIG. 3 and FIG. 4 show alternative end results obtainable when the etch process is stopped in accordance with the example embodiments. In FIG. 3, the inner rim of the liner 11 (having an upper edge 18 and a lower edge 19) is truncated by the etch process while the thickness of the liner 11 remains virtually intact or slightly reduced. In the case of FIG. 3 therefore, the cavity 13 is also formed below the liner 11.

[0041] In FIG. 4, the spherical shape of the cavity 13 is not reached until the etch process progresses beyond the lower edge 19 of the liner 11 along a height h. As long as the height h is small compared to the original height H of the liner, for example smaller than 10% of this original height, or smaller than 5% or 3% or 2%, this embodiment is still defined as a cavity that is “below the liner”, or equivalently, “a cavity that extends downward and laterally outward from the bottom (prior to the extension formation) of the trench.” The trench 10 is shown in FIG. 3 and FIG. 4.

[0042] Turning back to FIG. 2g, a second liner 14 can be formed on the inner surface of the trench 10 (e.g., on the first liner 11) and on the inner surface of the cavity 13. The second liner 14 can be formed of the same material as the first liner 11 and can for example be formed by atomic layer deposition (ALD) or by area selective deposition (ASD). The second liner 14 is equally formed on the upper surface of the device wafer, but subsequently removed therefrom by a planarization process (including CMP for example). The second liner 14 can be used when the eventual buried rail needs to be isolated from the bulk of the Si layer 1. This can depend on the dopant type of the fins and/or on the type and functionality of the active devices that are to be connected to the buried rail.

[0043] With reference to FIG. 2h, the trench 10 and the cavity 13 are then filled with an electrically conductive material, such as a metal that can be applied by any suitable technique known in the art, to thereby form the buried power rail 15, consisting of a narrow portion 15a and a wider portion 15b (e.g., wider than the narrow portion 15a) extending downward from the lower end of the narrow portion 15a. Throughout this description and in the appended claims, the terms “narrow”, “wide”, “wider” and “width” refer to dimensions extending in the direction perpendicular to the longitudinal direction of the trench 10.

[0044] The deposition of metal can be preceded by the deposition of a barrier layer and a seed layer (not shown), also well known in the art. Metal deposition can, for example, be done by plating or by ALD, or by physical vapor deposition and reflow cycling, a technique that is also known as such in the art. ALD is however likely to leave a void in the center of the cavity 13 due to the nature of the deposition process. This will not form a problem for the functionality of the buried rails 15, as will be explained further. In any case, a volume of conductive material is deposited in the cavity 13 and forms an integral part of the buried rail 15, referred to in the appended claims as “wider portion” 15b configured to be contacted from the back of the Si layer 1 during subsequent processing. The lateral dimension of the wider portion 15b is significantly larger than the width of the rail, enabling a large contact area with a TSV connection formed from the back side of the Si layer 1, as will be described hereafter.

[0045] According to one or more alternative embodiments, the first liner 11 is removed from the sidewalls of the trench 10 before depositing the second liner 14 or before filling the trench (if no second liner is used). The removal of the liner 11 from the sidewalls can be done by a wet etch process or by a dry isotropic etch process. The removal of the first liner allows more space for the filling of the trenches and can thereby contribute to downscaling the dimensions of active devices on the IC.

[0046] After removing any conductive material deposited on the upper surface of the device wafer (for example, by planarization), processing of active devices on the device wafer can start. This involves a large number of functions for producing mainly transistors on the fins 2 and 2′, to thereby produce the so-called front end of line (FEOL) portion of the IC. Such functions are known to persons having ordinary skill in the art.

[0047] Next, FIG. 2i shows that the narrow part 15a of the buried rail is recessed from the top, and the obtained cavity is filled with a dielectric material 16. As known in the art, this is done to produce local interconnects to the active devices through this dielectric material 16.

[0048] The front end of line portion is schematically indicated in FIG. 2i by layer 20. On top of this layer is the back end of line (BEOL) portion 21, also well known in the art as a multilayer interconnect structure designed to connect the active devices of the front end of line to signal terminals of the chip. The buried power rails 15 (consisting of 15a and 15b) are connected to the active devices through local interconnects at specific positions along the fins. These interconnects are also not shown in FIG. 2i but their appearance and fabrication method can be in accordance with known technology.

[0049] Reference is now made to FIG. 2j. After FEOL and BEOL processing, the device wafer is flipped 180° and bonded to a carrier wafer (not shown), after which the base wafer 5 is thinned. The thinning process can include grinding and CMP, and ends with an etch process that stops on the etch stop layer 6, followed by the removal of this etch stop layer, to thereby expose the back side surface of the Si layer 1, as illustrated in FIG. 2j. The above-described thinning and etching are also well-known in the art.

[0050] With reference to FIG. 2k, a via opening 22 is then produced by well-known lithography and etching techniques, aligned to the buried rail 15. The width of the via opening is larger than the width of the narrow rail portion 15a and fully overlaps this narrow rail portion. In the case shown, the width of the via opening 22 is smaller than the width of the wider rail portion 15b, but the width of the via opening 22 can also exceed this wider rail portion's width. For embodiments including the second liner 14, FIG. 2k shows the second liner 14 can be removed from the bottom of the via opening 22.

[0051] FIG. 2l and FIG. 2m illustrate that a third dielectric liner 23 is produced on the bottom and sidewalls of the via opening 22 and on the back side surface of the Si layer 1, followed by the removal of the third liner 23 from the bottom and upper surface while maintaining it on the sidewalls.

[0052] Then, with reference to FIG. 2n, an electrically conductive material, such as a metal, is deposited, filling the via opening 22, and creating thereby a TSV connection 24 from the back side of the Si layer 1 to the buried rail 15. The presence of the rail portion 15b having a larger width than the narrow rail portion 15a ensures a large contact area between the TSV connection 24 and the rail 15.

[0053] Following this, further well-known functions can be applied for producing a power delivery network on the back side of the Si layer 1, configured to deliver power to the active devices in the FEOL portion 20 on the front side of the Si layer 1.

[0054] FIG. 5a and FIG. 5b illustrate another embodiment, wherein the cavity 13 is produced by a process known as “atomic layer etching” (ALE), starting from the extension 12 of the trench 10, shown in FIG. 2e. ALE enlarges the extension 12 not in an isotropic way, but by progressively shifting the sidewalls of the extension 12, until a cavity is obtained having an essentially rectangular cross section along two orthogonal vertical planes. As shown in FIG. 5b, the deposition of the second liner 14 and of the conductive material takes place in the same way as described above, leading to the buried rail comprising a narrow portion 15a and a larger portion 15b. The other functions described above for producing the TSV connection 24 are applicable as such to this embodiment.

[0055] The cavity 13 can have other shapes besides the spherical and rectangular shapes described above. One alternative can be a diamond-shape, obtainable when an isotropic etch process is applied that progresses according to specifically oriented crystal planes of the semiconductor layer 1.

[0056] In the embodiment described so far, the wider portion 15b of the buried rail extends along the entire length of the rail, e.g., in the direction perpendicular to the drawings. It is also possible to produce the wider portion 15b locally, e.g., only at the location along the length of the rail where the TSV connection is to be located. Further aspects of this embodiment are illustrated in FIG. 6a and FIG. 6b to FIG. 12a and FIG. 12b. Each pair of images labelled “a” and “b” shows respective cuts along two orthogonal planes.

[0057] In FIG. 6a and FIG. 6b, the trench 10 is shown, provided with the liner 11.

[0058] In FIG. 7a and FIG. 7b, the liner 11 has been removed from the bottom of the trench 10 and from the upper surface of the device wafer.

[0059] In FIG. 8a and FIG. 8b, a stack of an SOC (spin-on carbon) layer 30 and an SOG (spin-on glass) layer 31 has been deposited on the device wafer, followed by the deposition and patterning of a resist layer 32. The use of and SOC/SOG stack as a hardmask is well known in the art of lithography and etching techniques. The patterned resist layer 32 exhibits an opening 33 above and overlapping the trench 10, the opening being wider than the trench 10. This is followed by etching the SOC/SOG stack 30/31 anisotropically relative to the resist layer 32, as illustrated in FIG. 9a and FIG. 9b, to thereby create an opening 34 in the SOC/SOG stack, e.g., the SOC/SOG stack 30/31 is turned into a mask that enables locally processing the portion of the Si layer 1 exposed by the opening 34. The etch process is selective with respect to the Si of layer 1 and to the liner 11, so that in the direction perpendicular to the trench, the opening 34 is self-aligned to the liner 11 on the sidewalls of the trench. In the longitudinal direction of the trench, the opening 34 has the same width as the opening 33 in the resist layer 32. The resist layer 32 is consumed during this process or any remaining resist is stripped after forming the opening 34.

[0060] As shown in FIG. 10a and FIG. 10b, the opening 34 is then deepened anisotropically to form a local downward extension 12 of the trench 10, followed by an isotropic etch that now creates a locally formed spherical cavity 13 extending outward in three dimensions from the part of the bottom of the trench corresponding to the opening 34 (FIG. 11a and FIG. 11b). The isotropic etch is selective with respect to the liner 11 and with respect to the SOC material of the mask so that the cavity is formed essentially below the liner and below the SOC layer 30. This is followed by the removal of the SOG layer. The removal of the SOG layer can also take place at another point of the process, for example before the deepening or simultaneously with the isotropic etch process. This can depend on the etch chemistry that is being used. The cavity 13 can alternatively be a rectangular shaped cavity if the ALE process is applied. Finally, the SOC layer 30 is removed resulting in the images shown in FIG. 12a and FIG. 12b. After this, the method can include functions as described above with reference to FIG. 2g to FIG. 2n.

[0061] In an alternative embodiment, removing the liner 11 (as shown in FIG. 7a and FIG. 7b) is skipped, and the liner 11 is removed locally from the bottom the opening 34, prior to deepening the opening. According to further alternatives, a plurality of cavities 13 can be formed at various locations along the length of the trench 10. According to still further alternatives, deepening the opening 34 and forming the extension 12 can be omitted.

[0062] FIG. 13a illustrates the appearance of a void 40 in the center of the cavity 13 when the ALD process (atomic layer deposition) is used to fill the cavity with an electrically conductive material. The method continues as described above for the case of a fully solid volume 15b at the bottom of the trench, starting with the creation of a via opening 22 from the back side of the Si layer, illustrated in FIG. 13b, and the formation of the third liner 23, shown in FIG. 13c. These functions can then be further pursued, leaving the void in place.

[0063] However according to another embodiment, the contact area can be further increased by first removing the third liner 23 from the bottom of the via opening 22 and then partially removing the material of the volume 15b, until the void 40 is exposed, as illustrated in FIG. 13d. The void 40 can be exposed about half-way as shown in the drawing, but this can also be a little more or less. The via opening 22 is then filled with conductive material, leading to the result shown in FIG. 13e, wherein the surface of the half-void contributes to increasing the contact surface area between the wider rail portion 15b and the TSV 24.

III. Example Operation

[0064] Next, FIG. 14 is a flowchart showing a set 200 of functions of methods in accordance with the example embodiments. The functions of the set 200 are shown in a block 201 to block 206. A method using one or more functions of the set 200 can include a method for producing a buried interconnect rail of an integrated circuit chip.

[0065] Block 201 includes providing a device wafer comprising a semiconductor layer on top. The semiconductor layer has a front surface and a back surface. The device wafer also comprises a dielectric layer on at least one or more parts of the front surface of the semiconductor layer.

[0066] Next, block 202 incudes producing a trench in the semiconductor layer or through the dielectric layer and into the semiconductor layer.

[0067] Next, block 203 includes producing a dielectric liner on inner surfaces of the trench.

[0068] Next, block 204 includes removing the dielectric liner from a bottom of the trench or from one or more parts of the bottom of the trench. The one or more parts are determined by producing a mask having one or more openings corresponding to the one or more parts, while maintaining the dielectric liner on sidewalls of the trench.

[0069] Next, block 205 includes applying an etch process that is selective with respect to the dielectric liner or with respect to the dielectric liner and the mask, thereby creating at least one cavity extending downward and laterally outward from the bottom of the trench or from each of the one or more parts of the bottom of the trench.

[0070] Next, block 206 includes filling the at least one cavity and the trench with an electrically conductive material to thereby form the buried interconnect rail. The buried interconnect rail comprises a narrow portion inside the trench and at least one wider portion inside the at least one cavity.

[0071] In at least some embodiments of a method that includes performing one or more functions of the set 200, the method also includes deepening the bottom of the trench or the one or more parts of the bottom of the trench while maintaining the dielectric liner on the sidewalls of the trench, thereby creating one or more extensions of the trench. In accordance with these embodiments, no liner is present on the sidewalls of the one or more extensions. Additionally, the etch process for creating the at least one cavity is applied after creating the one or more extensions.

[0072] In at least some embodiments of a method that includes performing one or more functions of the set 200, the etch process is an isotropic etch process. Moreover, the at least one cavity has a spherical shape or a diamond shape, as seen in a cross section oriented perpendicularly with respect to a longitudinal direction of the trench.

[0073] In at least some embodiments of a method that includes performing one or more functions of the set 200, the etch process is an atomic layer etch process. Moreover, the at least one cavity has a rectangular shape, as seen in a cross section oriented perpendicularly with respect to a longitudinal direction of the trench.

[0074] In at least some embodiments of a method that includes performing one or more functions of the set 200, the method also includes thinning the device wafer until the back surface of the semiconductor layer is exposed and producing a via opening through the back surface. The via opening is wider than the narrow portion of the buried rail and fully overlaps the narrow portion so that the via opening also overlaps at least part of the wider portion of the buried rail. The method also includes filling the via opening with an electrically conductive material, thereby forming a TSV connection that contacts one of the at least one wider portions of the buried rail.

[0075] In at least some embodiments of a method discussed in the preceding paragraph, filling the trench and the at least one cavity results in the appearance of a void in a center of the at least one wider portion of the rail. After forming the via opening, the wider portion of the rail is partially removed until a part of an inner surface of the void is exposed. Moreover, the TSV connection is formed by filling the part of the inner surface of the void and by filling the via opening with the conductive material.

[0076] In at least some embodiments of a method discussed above that include performing one or more functions of the set 200, the dielectric liner include a first dielectric liner. Additionally, a second dielectric liner is deposited on the first dielectric liner and on an inner surface of the at least one cavity, before filling the cavity and the trench with the electrically conductive material.

[0077] In at least some embodiments of a method that include performing one or more functions of the set 200, the dielectric liner is removed from the sidewalls of the trench, before filling the trench and the cavity.

[0078] In at least some embodiments of a method discussed in the preceding paragraph, a second dielectric liner is deposited on the sidewalls of the trench and on an inner surface of the at least one cavity, before filling the cavity and the trench with the electrically conductive material.

IV. Conclusion

[0079] This description relates to a microstructure obtainable by the methods described above. A microstructure (or semiconductor microstructure) is defined in the present context as a structure comprising (semiconductor) components whose dimensions are on the scale of nanometers or tens of nanometers, such as the fins and the buried rails described above. This description also relates to an integrated circuit chip comprising such a microstructure.

[0080] While example embodiments are illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative or exemplary and not restrictive. Other variations to the disclosed embodiments can be understood and effected by those skilled in the art, from a study of the drawings, the disclosure and the appended claims. In the claims, the word “comprising” does not exclude other functions, elements or steps, and the indefinite article “a” or “an” does not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used in other embodiments. Any reference signs in the claims should not be construed as limiting the scope.

[0081] The foregoing description details certain example embodiments. It will be appreciated, however, that no matter how detailed the foregoing appears in text, the example embodiments can be practiced in many ways, and is therefore not limited to the embodiments disclosed. It should be noted that the use of particular terminology when describing certain features or aspects of the example embodiments should not be taken to imply that the terminology is being re-defined herein to be restricted to include any specific characteristics of the features or aspects of the embodiments with which that terminology is associated.

[0082] Unless specifically specified, the description of a layer being present, deposited or produced “on” another layer or substrate, includes the options of the layer being present, produced or deposited directly on, e.g., in physical contact with, the other layer or substrate, and the layer being present, produced or deposited on one or a stack of intermediate layers between the layer and the other layer or substrate.

[0083] While some embodiments have been illustrated and described in detail in the appended drawings and the foregoing description, such illustration and description are to be considered illustrative and not restrictive. Other variations to the disclosed embodiments can be understood and effected in practicing the claims, from a study of the drawings, the disclosure, and the appended claims. The mere fact that certain measures or features are recited in mutually different dependent claims does not indicate that a combination of these measures or features cannot be used. Any reference signs in the claims should not be construed as limiting the scope.