Location-specific growth and transfer of single crystalline TMD monolayer arrays

Abstract

The exemplary embodiments describe techniques for a controlled chemical vapor deposition growth and transfer of arrayed TMD monolayers on predetermined locations, which enable the formation of single crystalline TMD monolayer arrays on specific locations. The unique growth process includes the patterning of transition metal oxide (e.g., MoO.sub.3) on the source substrate contacting the growth substrate face-to-face, where the growth of single crystalline TMD monolayers with controlled size and location, exclusively on predetermined locations on the growth substrates is accomplished. These TMD arrays can be align-transferred using a unique process that combines the wet and stamping transfer processes onto any target substrate with a pin-point accuracy, which dramatically enhances the integrity of transferred TMDs.

Claims

1. A method for growing patterned transition metal dichalcogenides on a substrate, said method comprising the steps of: providing a source substrate having a first surface comprising a patterned film; providing a growth substrate that is void of a patterned film; soaking said growth substrate in a potassium hydroxide solution, for a length of time sufficient to allow said growth substrate to undergo an increase in surface energy; placing said source substrate and said growth substrate face-to-face after said soaking step to thereby form a composite structure comprising said source substrate and said growth substrate; and subjecting said composite structure to a chemical vapor deposition process to thereby create a first transition metal dichalcogenide layer on said growth substrate and a second transition metal dichalcogenide layer on said source substrate, both said first transition metal dichalcogenide layer and said second transition metal dichalcogenide layer being patterned in accordance with said patterned film.

2. The method of claim 1, wherein said step of providing a source substrate comprises the steps of providing a base substrate; and spin-coating photoresist on said base substrate to form a patterned array on said source substrate.

3. The method of claim 2 wherein said step of providing a source substrate further comprises the step of performing photolithography on said source substrate after forming said spin-coating step.

4. The method of claim 3, wherein said step of providing a source substrate further comprises the step of performing a lift-off procedure on said patterned array, following said step of performing photolithography, whereby said patterned array becomes said patterned film.

5. The method of claim 1, wherein said patterned film comprises a transition metal oxide.

6. The method of claim 5, wherein said transition metal oxide comprises molybdenum trioxide.

7. The method of claim 1, wherein said growth substrate comprises silicon dioxide.

8. The method of claim 1, wherein said source substrate comprises silicon dioxide.

9. The method of claim 1, wherein said first transition metal dichalcogenide layer and said second transition metal dichalcogenide layer each comprise molybdenum disulfide.

10. The method of claim 1, wherein performing chemical vapor deposition further comprises delivering heated argon, hydrogen and sulfur gases to said growth substrate and said source substrate.

11. The method of claim 1, wherein said KOH solution is 30% weight/volume KOH.

12. A process for transferring transition metal dichalcogenide arrays onto a target substrate, said process comprising the steps of: providing a target substrate; obtaining a transfer substrate having a film coating; coating said transfer substrate with Poly(methylmetharcrylate) to form a chip; allowing said chip to dry; floating said chip in aqueous potassium hydroxide solution; retrieving a film product from said solution; rinsing said film product with deionized water; drying said film product; attaching said film product to a thermal tape; aligning said film product with a desired microstructure of said target substrate; adhering said thermal tape to said target substrate; baking said target substrate; and soaking said target substrate in acetone, thereby removing said thermal tape and said Poly(methylmetharcrylate).

13. The method of claim 12, wherein said obtaining step comprises the steps of: providing a source substrate having a first surface comprising a patterned film; providing a growth substrate that is void of a patterned film; soaking said growth substrate in a potassium hydroxide solution, for a length of time sufficient to allow said growth substrate to undergo an increase in surface energy; placing said source substrate and said growth substrate face-to-face after said soaking step to thereby form a composite structure comprising said source substrate and said growth substrate; and subjecting said composite structure to a chemical vapor deposition process to thereby create a first transition metal dichalcogenide layer on said growth substrate and a second transition metal dichalcogenide layer on said source substrate, both said first transition metal dichalcogenide layer and said second transition metal dichalcogenide layer being patterned in accordance with said patterned film.

14. The method of claim 12 wherein said thermal tape has a window to aid alignment.

15. The method of claim 12, wherein said target substrate is baked on a hot plate for 1 minute at 90 C.

16. The method of claim 12, wherein said soaking step is performed at a temperature of 50 C.

17. The method of claim 12, wherein said film coating comprises molybdenum disulfide.

18. The method of claim 12, wherein said transfer substrate comprises silicon dioxide.

19. The method of claim 12, wherein said aligning step and said adhering step are done through micromanipulation means.

20. The method of claim 12, wherein said film coating comprises a transition metal dichalcogenide layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A. is a schematic diagram showing spin-coating and patterning photoresist on a 90 nm SiO.sub.2 substrate;

(2) FIG. 1B is a schematic diagram showing the deposition of 5 nm MoO.sub.3 (1B) on the substrate of FIG. 1A;

(3) FIG. 1C is a schematic diagram showing the MoO.sub.3 dot arrays forming via a lift-off process;

(4) FIG. 1D is a schematic diagram showing MoS.sub.2 arrays grown on both the source and growth substrates following CVD;

(5) FIG. 1E shows the transfer of MoS.sub.2 arrays onto target substrates;

(6) FIG. 1F shows the transfer of MoS.sub.2 arrays onto target substrates;

(7) FIG. 2 illustrates the CVD growth setup (FIGS. 1C and 1D): the MoO.sub.3 source substrate is placed face-to-face with the growth substrate in the center of the furnace. Gaseous Ar, H.sub.2, and S are delivered from upstream.

(8) FIG. 3A is a schematic diagram that shows the coating of PMMA on the as-grown sample;

(9) FIG. 3B is a schematic diagram that shows the sample being dried in an ambient condition;

(10) FIG. 3C is a schematic diagram that shows the sample being put into a 30% weight/volume KOH solution;

(11) FIG. 3D is a schematic diagram that shows the PMMA being attached to a thermal tape with a small square window after being separated from the substrate, scooped out and rinsed in DI water;

(12) FIG. 3E is a schematic diagram that shows the aligned-transfer process;

(13) FIG. 3F is a schematic diagram that shows the target substrate being baked on a hotplate;

(14) FIG. 3G is a schematic diagram that shows the target substrate being soaked in acetone;

(15) FIG. 3H is a schematic diagram that represents the transfer of TMD arrays onto arrayed structures;

(16) FIG. 4A shows MoS.sub.2 monolayer arrays grown on the growth substrate;

(17) FIG. 4B shows arrays of MoS.sub.2 grown using 10 m diameter MoO.sub.3 dot patterns, near the center of the growth substrate; and

(18) FIG. 4C shows arrays of single crystalline MoS.sub.2 monolayers, grown using 20 m diameter MoO.sub.3 dot patterns on the source substrate.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

(19) The following disclosure is presented to provide an illustration of the general principles of the present invention and is not meant to limit, in any way, the inventive concepts contained herein. All terms defined herein should be afforded their broadest possible interpretation, including any implied meanings as dictated by a reading of the specification as well as any words that a person having skill in the art and/or a dictionary, treatise, or similar authority would assign thereto.

(20) Further, it should be noted that, as recited herein, the singular forms a, an, and the include the plural referents unless otherwise stated. Additionally, the terms comprises, comprising, includes, including, has and the like, when used herein specify that certain features are present in that embodiment; however, this phrase should not be interpreted to preclude the presence or addition of additional steps, operations, features, components, and/or groups thereof.

(21) Aspects of the present invention include a synthesis process of localized TMDs and a transfer process of as grown TMD arrays to an arbitrary substrate. FIGS. 1A-1F are schematic diagrams showing the growth and transfer processes of MoS.sub.2 monolayer arrays using patterned MoO.sub.3 precursors in accordance with embodiments of the present invention. In this exemplary embodiment, photoresist is spin-coated and patterned on a 90 nm SiO.sub.2 substrate (See FIG. 1A) followed by the deposition of 5 nm MoO.sub.3 (See FIG. 1B). The MoO.sub.3 dot arrays are then formed via a lift-off process (See FIG. 1C). Following CVD, MoS.sub.2 arrays are grown on both the source and growth substrates (See FIG. 1D). The MoS.sub.2 arrays are transferred onto target substrates (See FIGS. 1E, 1F). Specifically, two substrates are used during the CVD growth, which are prepared separately, with patterned transition metal oxide films deposited on the source substrate and a chemical treatment on the bare silicon dioxide growth substrate Arrays of dot patterns of 5 nm-thick transition metal oxide film are created on an oxidized silicon wafer, the source substrate using a conventional photolithography process followed by a standard lift-off process. The growth substrate is soaked in 30% weight/volume KOH for 10 seconds, in order to increase the surface energy.

(22) Referring to FIG. 2, two substrates are used for growth: the substrate with the transition metal precursor is used as the source substrate, and an oxidized silicon substrate is used as the growth substrate. During the growth, the source and growth substrates are in physical contact, face-to-face. By controlling the distance between the alumina boat and the heating zone of the tube furnace, the sulfur in the crucible is fully melted (from solid form to liquid form). The sulfur fully evaporates after around 10-15 minutes at 750 C. The heating element is then turned off to cool by ordinary dissipation to 550 C., at which point the gases are turned off and the furnace opened for a more rapid cooling.

(23) Referring to FIG. 3, during the aligned-transfer process, single crystalline TMD monolayer arrays on an oxidized silicon substrate are coated with a thin layer of Poly(methyl methacrylate) (PMMA) using a dropper. The substrate is left in an ambient condition to dry for 60 min. Then the chip is floated in 30% weight/volume KOH (aq) for 10 min, in which the substrate sinks due to etching of SiO.sub.2, leaving the PMMA/TMD layers floating on the KOH solution. The PMMA/TMD is cleaned with DI water and dried with an air blower. The sample is then attached to thermal tape with a small square window. The window in the non-transparent thermal tape aids the alignment process and provides a full exposure of PMMA to acetone during the polymer removal process. The thermal tape with PMMA/TMD is attached to a glass slide using double-side tape. The glass slide is mounted on a x, y, z, rotation micromanipulator. The target substrate with the pre-fabricated microstructures is placed on the microscope stage. Once the microstructure is identified under the microscope, the desired TMDs are aligned to the target locations using the micromanipulator. The glass slide/thermal tape/PMMA/TMD is carefully placed in contact with the microstructure by lowering it while observing in a microscope, at which point the thermal tape fixes the positions of the PMMA/TMD against the target substrate. The tape/PMMA/TMD/target is unmounted and baked on hot plate at 90 C. for 1 min and then soaked in acetone at 50 C. to remove the tape and PMMA. In this manner, TMD arrays are transferred onto arrayed structures.

(24) Preliminary Results

(25) Referring to FIG. 4A, small (20 m) patterns of transition metal oxide layers tend to enhance the growth of predominantly single-crystalline islands, while large (40 m) patterns are found to facilitate the growth of continuous polycrystalline layers.

(26) Referring to FIG. 4B, with 20 m diameter MoO.sub.3 dots on the source substrate, uniform monolayers of single crystalline MoS.sub.2 arrays were formed on the growth substrate.

(27) Referring to FIG. 4C, in order to maintain the integrity of MoS.sub.2 and protect the microstructure during the transfer process, a wet transfer process along with a thermal tape as a stamping carrier for the PMMA/MoS.sub.2 layer was used during alignment. Localized MoS.sub.2 single crystalline monolayer flake was successfully transferred onto an exemplary microstructure. The structure is very fragile, and has a height and width both of 500 nm.

(28) Supplemental details and further experimental verification are presented in the publication by Xiaotian Wang et al., titled Location-Specific Growth and Transfer of Arrayed MoS2 Monolayers with Controllable Size, 2D Materials, Vol. 4(2), April 2017 [online], <URL: https://www.researchgate.net/publication/316250656_Location-Specific_Growth_and_Transfer_of_Arrayed_MoS2_Monolayers_with_Controllable_Size> <DOI:10.1088/2053-1583/aa6e69>, the entire disclosure of which is incorporated herein by reference and is made part of the present disclosure.

(29) It will be understood that the embodiments described herein are merely exemplary and that a person skilled in the art may make many variations and modifications without departing from the spirit and scope of the invention. All such variations and modifications are intended to be included within the scope of the invention.