Semiconductor chip packaging structure without soldering wire, and packaging method thereof
10665563 ยท 2020-05-26
Assignee
Inventors
Cpc classification
H01L21/02422
ELECTRICITY
H01L23/49811
ELECTRICITY
H01L24/82
ELECTRICITY
H01L2224/24225
ELECTRICITY
International classification
H01L21/00
ELECTRICITY
H01L21/02
ELECTRICITY
Abstract
A semiconductor chip packaging structure without soldering wire and a packaging method thereof are disclosed. The semiconductor chip packaging structure comprises at least one packaging structure, and each packaging structure comprises a substrate, and a semiconductor chip is arranged on the substrate. Pins of the semiconductor chip are electrically connected to the conductive circuit formed by engraving or etching metal film or alloy film. The semiconductor chip packaging structure also comprises a packaging glue layer covering the semiconductor chip and the conductive circuit. The semiconductor chip packaging method includes steps of arranging a semiconductor chip on the substrate; forming a metal film or an alloy film around the semiconductor chip; etching the metal film or alloy film, to form the conductive circuit; and covering a packaging glue layer on the semiconductor chip and the conductive circuit. As a result, the production efficiency can be improved greatly.
Claims
1. A semiconductor chip packaging structure without soldering wires, comprising: at least one packaging structure comprising a substrate; a semiconductor chip arranged on the substrate, wherein pins of the semiconductor chip are directly electrically connected to a patterned conductive circuit around the semiconductor chip without soldering wires, the patterned conductive circuit formed by engraving or etching a metal film or an alloy film, and the patterned conductive circuit is arranged on the substrate; and a packaging glue layer covering the semiconductor chip and the patterned conductive circuit, and the semiconductor chip and the patterned conductive circuit are formed between the packaging glue layer and the substrate.
2. The packaging structure according to claim 1, wherein the metal film or the alloy film is formed by vacuum vapor deposition, magnetically-controlled sputtering, continuous plating, water plating, or chemical plating.
3. The packaging structure according to claim 1, wherein the patterned conductive circuit is formed by laser engraving.
4. The packaging structure according to claim 1, wherein the packaging glue layer is cured by electromagnetic wave.
5. The packaging structure according to claim 1, wherein the substrate is made by glass, plastic, or ceramic, and the packaging structure is a packaging structure having one of two to ninety-six layers.
6. The packaging structure according to claim 2, wherein the substrate is made by glass, plastic, or ceramic, and the packaging structure is a packaging structure having one of two to ninety-six layers.
7. The packaging structure according to claim 3, wherein the substrate is made by glass, plastic, or ceramic, and the packaging structure is a packaging structure having one of two to ninety-six layers.
8. The packaging structure according to claim 4, wherein the substrate is made by glass, plastic, or ceramic, and the packaging structure is a packaging structure having one of two to ninety-six layers.
9. A semiconductor chip packaging method without soldering wires, comprising: (A1) arranging a semiconductor chip on a substrate; (A2) providing a metal film or an alloy film around the semiconductor chip, and the metal film or the alloy film is arranged on the substrate and directly electrically connected to pins of the semiconductor chip without soldering wires; (A3) engraving or etching the metal film or the alloy film to form a patterned conductive circuit; and (A4) covering a packaging glue layer on the semiconductor chip and the patterned conductive circuit, and the semiconductor chip and the patterned conductive circuit are formed between the packaging glue layer and the substrate.
10. The semiconductor chip packaging method according to claim 6, wherein the metal film or the alloy film is formed by vacuum vapor deposition, magnetically-controlled sputtering, continuous plating, water plating, or chemical plating.
11. The semiconductor chip packaging method according to claim 7, wherein the patterned conductive circuit is formed by laser engraving.
12. The semiconductor chip packaging method according to claim 8, wherein the packaging glue layer is cured by electromagnetic wave.
13. The semiconductor chip packaging method according to claim 9, wherein the substrate is made by glass, plastic or ceramic.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The structure, operating principle and effects of the present invention will be described in detail by way of various embodiments which are illustrated in the accompanying drawings.
(2)
(3)
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
(4) The following embodiments of the present invention are herein described in detail with reference to the accompanying drawings. These drawings show specific examples of the embodiments of the present invention. It is to be understood that these embodiments are exemplary implementations and are not to be construed as limiting the scope of the present invention in any way. Further modifications to the disclosed embodiments, as well as other embodiments, are also included within the scope of the appended claims. These embodiments are provided so that this disclosure is thorough and complete, and fully conveys the inventive concept to those skilled in the art. Regarding the drawings, the relative proportions and ratios of elements in the drawings may be exaggerated or diminished in size for the sake of clarity and convenience. Such arbitrary proportions are only illustrative and not limiting in any way. The same reference numbers are used in the drawings and description to refer to the same or like parts. As used herein, the term or includes any and all combinations of one or more of the associated listed items.
(5) It will be understood that when an element or layer is referred to as being on, connected to or coupled to another element or layer, it can be directly on, connected or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being directly on, directly connected to or directly coupled to another element or layer, there are no intervening elements or layers present.
(6) In addition, unless explicitly described to the contrary, the word comprise and variations such as comprises or comprising, will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.
(7) As shown in
(8) As shown in
(9) In step A1, a semiconductor chip is arranged on the substrate.
(10) In step A2, the metal film or the alloy film is formed around the semiconductor chip.
(11) In step A3, the metal film or alloy film is engraved or etched to form the conductive circuit.
(12) In step A4, a packaging glue layer is covered on the semiconductor chip and the conductive circuit.
(13) According to an embodiment of the present invention, the metal film or the alloy film can be formed by vacuum vapor deposition, a magnetically-controlled sputtering, a continuous plating, a water plating, or a chemical plating. The conductive circuit can be formed by laser engraving. The packaging glue layer can be cured by electromagnetic wave. The substrate can be made by glass, plastic, or ceramic.
(14) The semiconductor chip packaging technology of the present invention is a unique semiconductor packaging technology which does not need base plate, solder paste, solder wire, reflow soldering process and reflow soldering oven, in the world.
(15) Compared with the conventional semiconductor chip packaging technology, the semiconductor chip packaging technology of the present invention has advantages below.
(16) The first advantage is to have no need for the base plate, so as to achieve effects of time cost reduction and even chip fixing glue reduction.
(17) The second advantage is to have no need for solder wire, so as to achieve effects of lowering operation cycle to save time, and improving yield and reliability.
(18) The third advantage is to have no need for solder paste, so as to achieve effects of not polluting environment, and reducing operation steps.
(19) The fourth advantage is to have no need for reflow soldering process, so as to prevent high-temperature step, and further save energy, and protect the packaging glue from being damaged.
(20) The fifth advantage is to have no need for oven, the glue of the present invention can be cured by electromagnetic wave, to save time and reduce power consumption, so that automation of the whole process can be improved.
(21) The plating machine and technology, such as vacuum vapor deposition, magnetically-controlled sputtering, water plating, chemical plating, are developed maturely in China are easily available in market and can be used in the present invention; furthermore, the user can use localized machines to implement the technical solution of the present invention without being subject to foreign countries. The technical solution of the present invention can use the self-developed material and technology, and use electromagnetic wave to cure glue, so as to reduce power consumption and time cost of production, and further significantly lower site and manpower cost, and improve reliability and production capacity. The technical solution of the present invention is a zero release and full recycling technology, and no waste water, no waste gas, no waste acid, no waste alkali is produced during the production process, and the processes are performed under room temperature. The process without producing waste heat can greatly save energy and material. It can be said that the technical solution of the present invention is a model of green environmental protection. All materials used in the present invention can be recycled for reuse. The present invention can improve performance of packaged product.
(22) In order to prevent from polluting living environment, the technical solution of the present invention is developed in overall consideration of product architecture, material, machine and process for semiconductor chip packaging technology and LED packaging structure, to achieve the purpose of reducing power consumption, site and time cost, and improving automation, so that the technical solution of the present invention can be more competitive in global market.
(23) In a basis of plating the metal film or alloy film, the sputtering surface of the semiconductor chip or the LED is planarized by using a mold, to reduce a flatness error of the sputtering surface to below 10 m. In an embodiment, vacuum vapor deposition, magnetically-controlled sputtering, continuous plating, water plating, or chemical plating can be used to plate one or more metal layer or alloy layer on the gluing surface and the chip, so as to form transparent or non-transparent conductive wires. A mask can be used to perform plating again, or etching process is performed after the plating process, or, an engraving process is performed to remove undesired conductive wire after the plating process, so as to form various circuits. Next, protection structures are formed for protecting the chip and conductive wires; and, after the packaging process, the cutting process, spectrophotometry test, logic test are performed on the packaged products, and the packaged products are then appropriately classified. The final products are delivered after packaging, storage, quality assurance, and test processes.
(24) The present invention disclosed herein has been described by means of specific embodiments. However, numerous modifications, variations and enhancements can be made thereto by those skilled in the art without departing from the spirit and scope of the disclosure set forth in the claims.