HEAT EXCHANGER

Abstract

A heat exchanger may include a flow chamber able to be flowed through by a first fluid, a fin structure arranged in the flow chamber, a heat transfer chamber, and a thermoelectric temperature-control system. The temperature-control system may include at least one Peltier element with a plurality of p-doped p-type semiconductors and a plurality of n-doped n-type semiconductors electrically contacting one another. On a side of the fin structure, a plurality of connecting structures may be arranged. A respective connecting structure may include an electrically insulating base layer and an electrically conductive connecting layer. The fin structure may include the base layer. The connecting layer may be applied on a side of the base layer facing away from the fin structure. One such p-type semiconductor and one such n-type semiconductor may be mounted on the connecting layer. The fin structure may be provided with the base layer via oxidation.

Claims

1. A heat exchanger, comprising: a flow chamber able to be flowed through by a first fluid; a fin structure arranged in the flow chamber and able to be flowed through by the first fluid; a heat transfer chamber for an exchange of heat with the first fluid; a thermoelectric temperature-control system, arranged between the fin structure and the heat transfer chamber, for heat transmission between the heat transfer chamber and the flow chamber; the temperature-control system including at least one Peltier element with a plurality of p-doped p-type semiconductors and a plurality of n-doped n-type semiconductors electrically contacting one another; wherein on a side of the fin structure facing the at least one Peltier element a plurality of connecting structures are arranged; a respective connecting structure including an electrically insulating base layer and an electrically conductive connecting layer; the fin structure including the base layer; the connecting layer applied on a side of the base layer facing away from the fin structure; one such p-type semiconductor and one such n-type semiconductor mounted, for the electrical contacting of these semiconductors, on the connecting layer on a side of the connecting layer facing away from the base layer; wherein the fin structure is provided with the base layer via oxidation.

2. The heat exchanger according to claim 1, wherein the fin structure is provided with the base layer via a reduction-oxidation reaction.

3. The heat exchanger according to claim 1, wherein the base layer is provided via at least one of an oxidation and a reduction-oxidation reaction of the fin structure.

4. The heat exchanger according to claim 1, wherein the base layer is anodized onto the fin structure.

5. The heat exchanger according to claim 1, wherein the heat transfer chamber is able to be flowed through by a second fluid and is delimited by a tube, and wherein the thermoelectric temperature-control system is arranged between the fin structure and the tube.

6. The heat exchanger according to claim 1, wherein the heat transfer chamber is able to be flowed through by a second fluid and is delimited by a sheet metal structure, and wherein the thermoelectric temperature-control system is arranged between the fin structure and the sheet metal structure.

7. The heat exchanger according to claim 1, wherein the base layer has a greater cross-sectional area than an associated connecting layer.

8. The heat exchanger according to claim 1, wherein the base layer is associated with at least two connecting layers.

9. The heat exchanger according claim 1, wherein the base layer has a flexibility matched to at least one of a flexibility of the fin structure and a flexibility of a component arranged on a side of the semiconductors facing away from the base layer.

10. The heat exchanger according to claim 1, wherein the connecting layer has a flexibility matched to at least one of a flexibility of the fin structure, a flexibility of the base layer, and to a flexibility of a component arranged on a side of the semiconductors facing away from the base layer.

11. The heat exchanger according to claim 1, wherein the base layer has a thermal conductivity of at least 1 W/(mK).

12. The heat exchanger according to claim 1, wherein the connecting layer has a connecting layer thickness extending from a side facing the base layer to the side facing away from the base layer, which is at least ten times smaller than at least one of a width of the connecting layer extending transversely to the connecting layer thickness and a length of the connecting layer extending transversely to the connecting layer thickness and transversely to the width.

13. The heat exchanger according to claim 1, wherein the base layer has a base layer thickness of 1 m to 100 m.

14. The heat exchanger according to claim 1, wherein: the fin structure has a plurality of first base sections including the base layer; the fin structure has a plurality of second base sections arranged spaced apart from the plurality of first base sections on a side of the plurality of first base sections facing away from the temperature-control system; the fin structure includes a plurality of legs projecting from the base sections, the plurality of legs connecting the base sections to one another; and the plurality of legs projecting from a respective base section extend in an inclined manner to one another.

15. The heat exchanger according to claim 14, wherein the fin structure is provided in a single piece and structured from a metal sheet.

16. An assembly comprising the fin structure and the temperature-control system of the heat exchanger according to claim 1, wherein the semiconductors of the temperature-control system are mounted on the fin structure and electrically contact one another via the plurality of connecting structures.

17. The heat exchanger according to claim 7, wherein the base layer is associated with at least two connecting layers.

18. The heat exchanger according to claim 9, wherein the connecting layer has a flexibility matched to at least one of i) a flexibility of the fin structure, ii) a flexibility of the base layer, and iii) a flexibility of a component arranged on a side of the semiconductors facing away from the base layer.

19. The heat exchanger according to claim 12, wherein the base layer has a base layer thickness of 1 m to 100 m.

20. An assembly comprising: a fin structure through which a first fluid is flowable; a thermoelectric temperature-control system including at least one Peltier element with a plurality of p-doped p-type semiconductors and a plurality of n-doped n-type semiconductors electrically contacting one another; a plurality of electrically insulating base layers arranged on the fin structure; a plurality of electrically conductive connecting layers arranged on a side of the plurality of base layers facing away from the fin structure; a plurality of connecting structures respectively including a base layer of the plurality of base layers and a connecting layer of the plurality of connecting layers, the plurality of connecting structures arranged on a side of the fin structure facing the at least one Peltier element; and a p-type semiconductor of the plurality of p-type semiconductors and a n-type semiconductor of the plurality of n-type semiconductors arranged on a side of the connecting layer facing away from the base layer such that the p-type semiconductor and the n-type semiconductor are electrically contactable; wherein the plurality of p-type semiconductors and the plurality of n-type semiconductors are mounted on the fin structure and electrically contact one another via the plurality of connecting structures; and wherein the base layer is an oxidation base layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0046] There are shown, respectively diagrammatically,

[0047] FIG. 1 a longitudinal section through a heat exchanger,

[0048] FIG. 2 a cross-section through the heat exchanger,

[0049] FIG. 3 a view onto the heat exchanger in another example embodiment,

[0050] FIG. 4 the section of FIG. 1 in a further example embodiment,

[0051] FIG. 5 the view of FIG. 4 in another example embodiment.

DETAILED DESCRIPTION

[0052] In FIG. 1 a heat exchanger 1 is shown, which can come into use in a motor vehicle which is otherwise not shown. The heat exchanger 1 has a flow chamber 2 and a heat transfer chamber 3 which is fluidically separated from the flow chamber 2. The flow chamber 2 is flowed through by a first fluid, whereas the heat transfer chamber 3 is flowed through by a second fluid. A heat exchange occurs here in the heat exchanger 1 between the first fluid and the second fluid. In the flow chamber 2 a fin structure 4 is arranged which, in the longitudinal section which is shown, has an omega-like shape. The heat transfer chamber 3 is delimited by a tube 5, which also delimits the flow chamber 2 or is arranged in the flow chamber 2. A thermoelectric temperature-control system 6 with a Peltier element 7 is arranged between the fin structure 4 and the tube 5 or respectively the heat transfer chamber 3. The Peltier element 7 has a plurality of p-doped p-type semiconductors 8 and n-doped n-type semiconductors 9 which, in the example which is shown, are arranged alternately along the tube 5. For the electrical connecting of the semiconductors 8, 9 in the manner of the Peltier element 7, respectively a p-type semiconductor 8 and an n-type semiconductor 9 are electrically connected to one another here. On the side of the semiconductors 8, 9 facing the tube 5, which is configured in particular as a flat tube 5, associated p-type semiconductors 8 and n-type semiconductors 9 are electrically connected to one another by means of an electrically conductive connecting element 10. As the tube 5 is electrically conductive and is made for example from a metal, an electrically insulating plate 11 is arranged between the tube 5 and the connecting elements 10 in order to prevent short-circuits between the connecting elements 10. The tube 5 is entirely covered here on the side facing the semiconductors 8,9 by the plate 11, which can be, for example, a ceramic plate 11.

[0053] On the side of the fin structure 4 facing the Peltier element 7 and the semiconductors 8,9 a plurality of connecting structures 12 are provided. The respective connecting structure 12 has an electrically insulating base layer 13 and an electrically conductive connecting layer 14. In the example which is shown, the base layer 14 is configured as a separate element and is mounted on the fin structure 4. Such a connecting layer 14 is applied, in particular connected to the base layer 13 in a materially bonded manner, on the side of the respective base layer 13 facing away from the fin structure 4 and therefore on the side of the respective base layer 13 facing the semiconductors 8, 9. The electrically conductive connecting layer 14 connects respectively one such p-type semiconductor 8 and one such n-type semiconductor 9 electrically to one another. Here, the connecting structures 12 are spaced apart from one another, so that the respective semiconductor pair, i.e. one such p-type semiconductor 8 and one such associated n-type semiconductor 9, is associated with one such connecting structure 12. On the side facing the fin structure 4, the semiconductors 8, 9 of the Peltier element 7 are therefore electrically contacted to one another by means of the connecting structure 12 and are electrically insulated with respect to the metalliferous fin structure 4.

[0054] The associated semiconductors 8, 9 are mounted on the associated connecting layer 14, such that the semiconductors 8, 9 are mechanically connected to the fin structure 4 via the connecting structure 12. The elastic and flexible fin structure 4 is therefore used in the Peltier element 7 for the compensation and reduction of thermal stresses which can occur during the operation of the heat exchanger 1, in particular of the Peltier element 7.

[0055] Here, the base layer 13 can be produced by an oxidation, a reduction-oxidation reaction, in particular by anodizing, on the fin structure 4, or can be applied by means of external application of a layer through chemical and/or physical bonding on the fin structure 4.

[0056] In FIG. 2 a cross-section is shown through the heat exchanger 1 in the region between the connecting layers 14 and the associated semiconductors 8, 9. In FIG. 2, firstly it can be seen that the Peltier element 7, in addition to the adjacent semiconductors 8, 9 along the tube 5, also has semiconductors 8, 9 spaced apart transversely hereto, which are also electrically contacted via such connecting structures 12 and are mounted on the fin structure 4. It can be seen in addition from FIG. 2 and FIG. 1 that both the base layer 13 and also the connecting layer 14 are configured so as to be thin. This means, in the connecting layer 14, that a thickness 15 of the connecting layer 14 extending from the side facing the base layer 13 to the side facing away from the base layer 13, or a connecting layer thickness 15, is distinctly smaller than a connecting layer width 16 running transversely to the connecting layer thickness 15, and a connecting layer length 17 running transversely to the connecting layer thickness 15 and transversely to the connecting layer width 16. This thin form of the connecting layer 14 provides, at the same time, for a flexible construction and sufficient electrical conductivity of the connecting layer 14. The thickness 15 of the connecting layer 14 here is preferably a few m, for example 1 to 100 m.

[0057] The base layer 14 also has a base layer thickness 18, which is distinctly smaller than a base layer width 22 and a non base layer length 23, which run parallel to the corresponding dimensions of the connecting layer 14. The base layer thickness 18 here is preferably between 1 m and 100 m, in particular between 30 m and 50 m. The base layer 13 is greater here than the associated connecting layer 14 and has in particular a greater cross-section than the associated connecting layer 14. Hereby, an improved electrical insulation of the connecting structure 14 with respect to the fin structure 4 is achieved, in particular short-circuits, for example caused by edge flaws and/or positioning inaccuracies, are prevented or at least reduced.

[0058] In FIG. 3 a similar view to in FIG. 2 is illustrated, wherein the view in FIG. 3 is slightly inclined and accordingly illustrated three-dimensionally. In FIG. 3 an example embodiment is illustrated which differs substantially from the example embodiment shown in FIG. 2 in that the fin structure 4 does not have an omega-shaped configuration, but rather is configured in a corrugated manner. Here, in the region of adjacent wave troughs of the fin structure 4, configured in a corrugated manner, facing the semiconductors 8, 9, such semiconductors 8, 9 are arranged and such associated connecting structures 12 are provided, which electrically contact associated semiconductors 8, 9, electrically insulate them from the fin structure 4 and connect them mechanically to the fin structure 4. In addition, in this example embodiment one such shared base layer 13 is provided for at least two such connecting layers 14, wherein in the example which is shown one such shared base layer 13 is associated with all connecting structures 14, which base layer extends over the entire visible surface of the fin structure 4 facing the semiconductors 8, 9. This means that the fin structure 4 is not respectively provided locally with a base layer 13 associated with the respective connecting layer 14, but rather is provided entirely with one such base layer 13, which is associated with at least two such connecting layers 14, in particular all connecting layers 14 and insulates these electrically with respect to the fin structure 4. The fin structure 4 can be provided here in a simplified manner with one such shared base layer 13, compared to several individual base layers 13.

[0059] Another example embodiment of the heat exchanger 1 is illustrated in FIG. 4. The heat exchanger 1 of FIG. 4 differs from the heat exchanger 1 shown in FIG. 1 substantially through the configuration of the base layers 13 of the respective connecting structure 12. The base layers 13 are illustrated in dashed lines in FIG. 4 and are a component part of the fin structure 4. This means that the base structure 13 of the respective connecting structure 12 is an integral component part of the fin structure 4. The integral configuration of the base structure 13 on the fin structure 4 takes place preferably through an oxidation or a reduction-oxidation reaction of the fin structure 4. This means that the respective base layer 13 is realized by a corresponding treatment of the fin structure 4. Hereby, a particularly advantageous matching or similarity exists between the flexibility and/or the thermal expansion- or respectively contraction behaviour of the base layer 13 and of the fin structure 4. Here, for better illustration, the respective base layer 13 is illustrated over the entire thickness of the fin structure 4, which, however, does not necessarily have to be the case. This means that the respective base layer 13 can have a base layer thickness 18 which is smaller than the thickness of the fin structure 4 in the associated region, wherein the base layer thickness 18 is preferably smaller than the thickness of the fin structure 4 in the associated region. Also in this example embodiment, the base layer thickness 18 is preferably between 1 m and 100 m, preferably between 30 m and 50 m.

[0060] A further example embodiment of the heat exchanger 1 is illustrated in FIG. 5. This example embodiment differs from the example embodiment shown in FIG. 4 in particular in that in the heat transfer chamber 3 a sheet metal structure 19 is arranged which, like the fin structure 4 is configured in a fin-like manner and has an omega shape. The sheet metal structure 19 delimits the heat transfer chamber 3 here and is able to be flowed through by the second fluid. The heat transfer chamber 3 and the flow chamber 2 are separated fluidically and thermally by a separating structure 20, wherein the separating structure 20 extends between adjacent semiconductors 8, 9 of the Peltier element 7.

[0061] It can be seen in addition from FIG. 5 that such connecting structures 12 are also provided between the semiconductors 8, 9 and the sheet metal structure 19, wherein the respective connecting structure 12, via the connecting layer 14 and the base layer 13, electrically contacts associated semiconductors 8, 9, electrically insulates them from the sheet metal structure 19 and connects them mechanically and thermally to the sheet metal structure 19. This means that on both sides of the semiconductors 8, 9 or respectively of the Peltier element 7, such connecting structures 12 come into use for the electrical contacting of the semiconductors 8, 9 and for the electrical insulating of the semiconductors 8, 9 with respect to the fin structure 4 or respectively the sheet metal structures 19, and for the mechanical connecting of the semiconductors 8, 9 to the fin structure 4 or respectively to the sheet metal structure 19. Hereby, a configuration of the heat exchanger is produced which is particularly stable with respect to thermal loads.

[0062] In the examples which are shown, the at least one base layer 13 and the connecting layers 14 are matched with regard to their flexibility to that of the fin structure 4, in particular in the region of the connecting structure 12, and/or to the component 5, 19 arranged on the side of the semiconductors 8, 9 facing away from the base layer 13, here therefore to the tube 5 or respectively to the sheet metal structure 19. This match depends here in particular on the thickness of the fin structure 4 or respectively of the component 5, 19 and/or on the material from which the fin structure 4 or respectively the component 5, 19 is produced. In the case of the rigid tube 5 and the flexible fin structure 4, the flexibility is respectively such that displacements of approximately 5 m to 50 m are compensated through flexible bending without the electrically insulating characteristic of the base layer 13 and the electrically conductive characteristic of the connecting layer 14 being lost and without the corresponding connections loosening. In the case of the flexible sheet metal structure 19 and the flexible fin structure 4, the flexibility of base layer 13 and connecting layer 14 is such that displacements of approximately 100 m to 1000 m are compensated through flexible bending without the electrically insulating characteristic of the base layer 13 and the electrically conductive characteristic of the connecting layer 14 being lost and without the corresponding connections loosening. The fin structure 4 forms, together with the such connecting structures 12 and the associated semiconductors 8, 9 of the Peltier element 7, an assembly 21, wherein such an assembly can be seen in FIGS. 2 and 3.

[0063] The fin structures 4 shown in FIGS. 1, 2, 4 and 5 have respectively first base sections 24, which are spaced apart from one another and are respectively provided with such a base layer 13. The respective fin structure 4 has, in addition, second base sections 25, which are arranged on the side of the first base sections 24 facing away from the temperature-control system 6 and are spaced apart therefrom. Two legs 26 project from the respective base section 24, 25, which legs connect the first base sections 24 to the adjacent second base sections 25 and vice versa. Therefore, one such leg 26 projects from the respective first base section 24, which also projects form the adjacent second base section 25. In the example which is shown, the legs 26 run in an inclined manner to the associated base sections 24, 25. In addition, the legs 26 projecting form the respective base section 24, 25 face one another and form an acute angle with this base section 24, 25.

[0064] In the example shown in FIG. 5, the sheet metal structure 19 is configured in an analogous manner to the fin structure 4. This means that the sheet metal structure 19 likewise has first and second base sections 24, 25 which are connected to one another by legs 26 in the manner previously described, wherein the first base sections 24 are respectively provided with such a base layer 13.