Surface mountable electronic component
10629485 · 2020-04-21
Assignee
Inventors
Cpc classification
H01L2224/0401
ELECTRICITY
H01L21/78
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/131
ELECTRICITY
H01L23/3171
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2224/16225
ELECTRICITY
H01L2224/131
ELECTRICITY
H01L2224/05008
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2224/05569
ELECTRICITY
H01L2224/16227
ELECTRICITY
H01L2224/81192
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L23/544
ELECTRICITY
International classification
H01L21/78
ELECTRICITY
H01L29/06
ELECTRICITY
Abstract
A surface mountable electronic component free of connecting wires comprises a semiconductor substrate, wherein a plurality of solderable connection areas are arranged at the underside of the component. The component comprises at least one recess is formed in the region of the edges bounding the underside; and in that the recess is covered with an insulating layer. A method for the manufacture of such a component comprises the formation of corresponding recesses.
Claims
1. A surface mountable electronic component free of connecting wires, having an upper side and an underside, the surface mountable electronic component comprising: a semiconductor substrate having an upper side surface, an underside surface and four side surfaces, wherein each of the four side surfaces join the underside surface at an edge and are not insulated; a plurality of planar solderable surfaces formed on the underside of the component; at least one recess formed in at least a region of the edge, the at least one recess covered with a first insulating layer, wherein for each at least one recess, a combination of the recess and the first insulating layer forms a hollow groove; at least one active region formed in a region of the semiconductor structure that is spaced apart from the side surfaces of the semiconductor substrate such that the at least one active region does not contact the hollow groove and the first insulating layer does not completely cover an exposed portion of the at least one active region; a metallized connection section running directly between the exposed portion of the at least one active area and a downwardly extending metallized connection area; the connection section at least partially covered by a second insulating layer which covers the connection section with the exception of a contact point between the connection section and the connection area; the connection area including an upstanding outer side wall; and the connection area being offset from the at least one active area.
2. A component in accordance with claim 1, wherein the plurality of solderable surfaces are formed exclusively on the underside of the component.
3. A component in accordance with claim 1, wherein a maximum depth of the recess amounts to at least 5 m and at most 40 m.
4. A component in accordance with claim 1, wherein a maximum depth of the recess amounts to at least 2% and at most 10% of a height of the component.
5. A component in accordance with claim 1, wherein the recess has a maximum depth that is equal to, or less than, a width of the recess.
6. A component in accordance with claim 1, wherein the first insulating layer comprises at least one of silicon oxide, silicon nitride, paint or an adhesive.
7. A component in accordance with claim 1, wherein the thickness of the first insulating layer amounts to less than 2 m.
8. A component in accordance with claim 3, wherein the maximum depth of the recess amounts to approximately 10 to 15 m.
9. A component in accordance with claim 4, wherein the maximum depth of the recess amounts to between approximately 3% to 6% of the height of the component.
10. A component in accordance with claim 1, wherein the thickness of the first insulating layer amounts to less than 1 m.
11. A surface mountable electronic component free of connecting wires, having an upper side and an underside, the surface mountable electronic component comprising: a semiconductor substrate having an upper side surface, an underside surface and four side surfaces, wherein each of the four side surfaces join the underside surface at an edge and are not insulated; a plurality of solderable surfaces formed on the underside of the component; and at least one recess formed in at least a region of the edge, the at least one recess covered with a first insulating layer, wherein for each at least one recess, a combination of the recess and the first insulating layer forms a shape including: a planar shoulder section, the planar shoulder section being inclined with respect to a plane defined by the underside of the surface mountable electronic component, and a base section bounding the inclined shoulder section on one side and a side surface of the semiconductor substrate at the other side; and at least one active region formed in a region of the semiconductor structure that is spaced apart from the side surfaces of the semiconductor substrate such that the at least one active region does not contact the at least one recess and the first insulating layer does not completely cover an exposed portion of the at least one active region; a metallized connection section running directly between the exposed portion of the at least one active area and a downwardly extending metallized connection area; the connection section at least partially covered by a second insulating layer which covers the connection section with the exception of a contact point between the connection section and the connection area; the connection area including an upstanding outer side wall; and the connection area being offset from the at least one active area.
12. The surface mountable electronic component of claim 11, wherein a degree of inclination of the planar shoulder section with respect to the plane amounts to 30 to 80.
13. The surface mountable electronic component of claim 11, wherein a degree of inclination of the planar shoulder section with respect to the plane amounts to approximately 60.
14. The surface mountable electronic component of claim 11, wherein the base section runs in parallel to the plane defined by the underside of the surface mountable electronic component.
15. The surface mountable electronic component of claim 1, wherein the outer side wall of the connection area is positioned more outwardly toward at least one of the side surfaces of the semiconductor substrate than the at least one active area.
16. The surface mountable electronic component of claim 11, wherein the outer side wall of the connection area is positioned more outwardly toward at least one of the side surfaces of the semiconductor substrate than the at least one active area.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The invention is described in the following by means of embodiments with reference to the drawing. There is shown:
(2)
(3)
(4)
(5)
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
(6)
(7) The present invention is, however, not limited to diodes but can principally be used in all plausible kinds of electronic components, in particular, also in substantially more complex integrated circuits.
(8) The component 10 comprises a semiconductor substrate 12 having a substantially quadratic shape. In the interior of the semiconductor substrate 12 two active structures 16 are present in the embodiments shown here which are formed by means of known methods in boundary regions of the semiconductor substrate 12 at the underside 14 of the component 10.
(9) The active structures 16 are in electric contact with respective connection sections 18 which are formed at the underside 14 by corresponding metallization layers. The connection sections 18 in turn are in contact with respective solderable connection areas 20 which likewise are formed by metallization layers. As can clearly be recognized in
(10) The connection areas 20 are provided for the formation of solder contacts with corresponding contacting surfaces 34 which are formed at a circuit board 32 in the form of copper surfaces (see
(11) Cutouts in the shape of recesses 22 are formed at the edges surrounding the underside 14 of the component 10, this means at the surface defining the edges between the underside 14 of the semiconductor substrate 12 and at the four side surfaces 25 of the semiconductor substrate 12.
(12) For the first embodiment in accordance with
(13) In the present embodiments the recesses 22 are surrounding peripherally can, however, alternatively can also only be provided in sections surrounding the edges along the underside 14 of the component 10.
(14) The recesses 22 are covered by an insulation layer 24a which is preferably composed of silicon oxide, however, can also be manufactured from a different electrically non-conducting material, such as, for example, silicon nitride, paint or adhesive. Also a combination of different insulating materials is possible.
(15) A further insulation layer 24b is provided at the underside 14 of the component and directly covers the semiconductor substrate 12 with the exception of the connection points between the active structures 16 and the connection sections 18. Furthermore, an insulation layer 24c is provided which covers the connection sections 18 with the exception of the contact points between the connection sections 18 and the connection areas 20.
(16) Finally, an insulation layer 24d is also provided at the upper side 26 of the component 10. The side surfaces 25 are free of insulation layers, with the exception of the recesses 22.
(17) With regard to the dimensions it should be noted that the schematic illustrations of
(18) In contrast to this the component 10 is illustrated substantially to scale in
(19) The component 10 in accordance with the invention generally has dimensions (length, width, height) which are preferably less than 1 mm. Hereby, a particularly high stacking density can indeed be achieved at a circuit board. However, for such small dimensions of the component 10 a particularly high danger of a possible short circuit between the connection areas 20 and the non-electrically insulated side surfaces 25 exists due to the solder 36. For this reason, the recesses 22 with the insulation layer 24a are particularly advantageous for such small dimensions.
(20) A marking code 38 is further provided at the upper side 26 of the component (
(21) The insulation layers 24a to 24d are, however, not visible in
(22) As can clearly be recognized in
(23) Although the solder 36 has a bulge in the region of the recess 22 in the direction of the component 10, as can clearly be recognized in the left half of the image of
(24) With regard to the shown embodiments it should be noted that no active structures 16 (e.g. p/n transition) are present in the region of the side surfaces 25 of the component 10. The recess 22 and the associated insulation layer 24a thus merely serve the purpose of avoiding a short circuit between the connection areas 20 and the respective conductive side surfaces 25 and not e.g. between the connection areas 20 and the active structures 16 of the component 10. Hereby, relatively small requirements can be expected of the respective recesses 22 and in particular of the associated insulation layer 24a (material and thickness) in order to effect the desired short circuit safety (in comparison, for example, to the electric insulation of a p/n junction).
(25) In the following, a method will be described merely by way of example by means of which components 10 in accordance with the invention can be manufactured.
(26) Typically, the manufacture of components 10 of this kind thereby takes place in that the desired semiconductor structures (active structures 16) are initially generated for a plurality of components 10 in a wafer in a planar process in a rasterized manner and then the respective connection areas 20 as well as the associated connection sections 18 are applied. The wafer is then separated by means of suitable separation methods, such as, for example, sawing, laser cutting or other cutting processes in order to separate the completed components 10. A further processing of the separated components 10 is generally not required and would, in particular for very small components, if at all, only be possible with a very large demand in effort and cost.
(27) The method of manufacture in accordance with the invention additionally provides that the recesses 22 are introduced into the wafer already prior to the separation. This can, for example, take place by etching, wherein the recesses 22 are preferably generated in the same method step as the marking code 38. The recesses 22 are introduced along the latter separation points between the components to be separated in the form of, for example, U shaped trenches (
(28) Through suitable measures, such as, for example, a sufficient dimensioning of the section of the recess 22 parallel to the underside 14 (
(29) The application of the insulation layer 24a likewise takes place prior to the separation. For example, the insulation layers 24a can be applied at the same time with one or more of the remaining insulation layers 24b to 24d at the recesses 22 so that masking steps demanding in effort and cost can be omitted.
(30) Through the method in accordance with the invention a surface mountable electronic component which is free of connection wires can be manufactured in a simple and cost-effective manner which can be connected to a circuit board 32 in a reliable manner on the avoidance of short circuits by means of soldering.
(31) For this purpose, the separated components 10 are positioned at a respective circuit board 32, for example, by means of a placement machine and is soldered to the contacting surfaces 34 there. Should the solder 36 have been provided at the contacting surfaces 34 of the circuit board 32 previously for this purpose, the provision of the recesses 22 with the respective insulation layer 24a at the component 10 is found to be particularly advantageous, since the contacting surfaces 34 of the circuit board 32 (and thus the thereon provided solder 36) typically projects from the periphery of the respective component 10, whereby a particularly high danger of a short circuit arises.