Methods of assembling a flip chip on a locking dual leadframe
10541225 ยท 2020-01-21
Assignee
Inventors
- Lee Han Meng @ Eugene Lee (Johor, MY)
- Wei Fen Sueann Lim (Melaka, MY)
- Anis Fauzi Bin Abdul Aziz (Kegah, MY)
Cpc classification
H01L2224/32013
ELECTRICITY
H01L2224/73204
ELECTRICITY
H01L2224/83203
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2224/131
ELECTRICITY
H01L2224/73204
ELECTRICITY
H01L24/97
ELECTRICITY
H01L2224/92242
ELECTRICITY
Y10T29/49121
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01L2224/131
ELECTRICITY
H01L2224/2919
ELECTRICITY
H01L2224/92242
ELECTRICITY
H01L2224/2919
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2224/32013
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/97
ELECTRICITY
H01L2924/00014
ELECTRICITY
H01L2224/83192
ELECTRICITY
H01L2924/00012
ELECTRICITY
H01L2224/83203
ELECTRICITY
H01L2224/97
ELECTRICITY
H01L24/73
ELECTRICITY
International classification
H01R43/00
ELECTRICITY
Abstract
A method of assembling a flip chip on a leadframe package. A locking dual leadframe (LDLF) includes a top metal frame portion including protruding features and a die pad and a bottom metal frame portion having apertures positioned lateral to the die pad. The protruding features and apertures are similarly sized and alignable. A flipped integrated circuit (IC) die having a bottomside and a topside including circuitry connected to bond pads having solder balls on the bond pads is mounted with its topside onto the top metal frame portion. The top metal frame portion is aligned to the bottom metal frame portion so that the protruding features are aligned to the apertures. The bottomside of the IC die is pressed with respect to a top surface of the bottom frame portion, wherein the protruding features penetrate into the apertures.
Claims
1. A method of making a semiconductor package comprising: attaching a semiconductor die to a first frame, the first frame including a protruding feature; attaching a second frame to the first frame, wherein the protruding feature of the first frame penetrates into an aperture of the second frame, wherein the semiconductor die is in between the first frame and the second frame; molding portions of the first frame, the second frame, and the semiconductor die using mold compound; and singulating portions of the first frame and the second frame, wherein singulation removes the protruding feature and the aperture.
2. The method of claim 1, wherein the first frame and the second frame are metal frames.
3. The method of claim 1, wherein the protruding feature is button shaped and includes necking and the aperture includes a circular hole.
4. The method of claim 1, wherein the protruding feature is U shaped and includes side necking and the aperture includes a rectangular hole.
5. The method of claim 1, wherein attaching the second frame to the first frame includes aligning the first frame and the second frame, and pressing the first frame to the second frame.
6. The method of claim 5, wherein the protruding feature includes a linear frame and the aperture includes a longitudinal hole, and further comprising bending a protruding end of the linear frame onto the second frame portion after the pressing.
7. The method of claim 1, wherein the first frame portion and the second frame portion are parts of leadframe sheets.
8. The method of claim 1, wherein the first frame portion and the second frame portion form a locking dual leadframe (LDLF).
9. The method of claim 1, wherein the first frame includes a plurality of leads of the semiconductor package.
10. A method of making a semiconductor package comprising: attaching a semiconductor die to a first frame, the first frame including a protruding feature; attaching a second frame to the first frame, wherein the protruding feature of the first frame penetrates into an aperture of the second frame, and wherein the die is in between the first frame and the second frame; molding portions of the first frame, the second frame, and the semiconductor die; and singulating portions of the first frame and the second frame, wherein singulation removes the protruding feature and the aperture, wherein a die attach material attaches a portion of the semiconductor die to the second frame.
11. The method of claim 10, wherein the first frame and the second frame are metal frames.
12. The method of claim 10, wherein the protruding feature is button shaped and includes necking and the aperture includes a circular hole.
13. The method of claim 10, wherein the protruding feature is U shaped and includes side necking and the aperture includes a rectangular hole.
14. The method of claim 10, wherein attaching the second frame to the first frame includes aligning the first frame and the second frame, and pressing the first frame to the second frame.
15. The method of claim 14, wherein the protruding feature includes a linear frame and the aperture includes a longitudinal hole, and further comprising bending a protruding end of the linear frame onto the second frame portion after the pressing.
16. The method of claim 10, wherein the first frame includes a plurality of leads of the semiconductor package.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) Reference will now be made to the accompanying drawings, which are not necessarily drawn to scale, wherein:
(2)
(3)
(4)
(5)
(6)
(7)
(8)
DETAILED DESCRIPTION
(9) Example embodiments are described with reference to the drawings, wherein like reference numerals are used to designate similar or equivalent elements. Illustrated ordering of acts or events should not be considered as limiting, as some acts or events may occur in different order and/or concurrently with other acts or events. Furthermore, some illustrated acts or events may not be required to implement a methodology in accordance with this disclosure.
(10)
(11) The protruding features are generally part of top metal frame portion which can be formed through a metal stamping process, so that the protruding feature are an integral part of the top metal leadframe portion. The protruding features are generally slightly smaller in area as compared to the apertures to permit fitting therethrough and longer than a thickness of the bottom metal frame portion. In one particular embodiment the top metal frame portion and bottom metal frame portion are both about 7 to 9 mm thick, and the protruding features are about 20 mm long.
(12) Step 102 comprises mounting a flipped integrated circuit (IC) die having a bottomside and a topside including circuitry (including transistor(s)) connected to bond pads having solder balls on the bond pads with the topside down onto the die pad area of the top metal frame portion. Step 103 comprises aligning the top metal frame portion to the bottom metal frame portion so that the protruding features are aligned to the apertures. As described below (see pilot holes 319 in
(13) Step 104 comprises pressing the bottomside of the IC die onto a top surface of the bottom metal frame portion having a die attach material thereon, wherein the protruding features penetrate into the apertures. A mechanical press can be used for the pressing along with optional heating. Subsequent assembly steps generally include reflowing the solder, molding with a mold material, then singulating the leadframe sheets into individual packaged devices. Singulation cuts around mold material, where the disclosed locking features are generally beyond the mold material and are thus removed by the singulation (e.g., see flip chip on leadframe package 600 in
(14)
(15) An integrated circuit (IC) die 215 has a bottomside and a topside including circuitry 223 connected to bond pads 216 having solder balls 219 on the bond pads 216 mounted flipped with its topside onto the top metal frame portion 210. A die attach material (e.g., an epoxy material) 218 is between the bottomside of the IC die 215 and the bottom metal frame portion 220 for securing the IC die 215 to the bottom metal frame portion 220. Underfill 237 is also shown.
(16) The top metal frame portion 210 is aligned to the bottom metal frame portion 220 so that the protruding features 225 are aligned to the apertures 220a. The protruding features 225 are sufficiently long to penetrate into, and generally through the full thickness of the apertures 225a. A mold compound (e.g., an epoxy) 230 encapsulates the flip chip on leadframe package 200 except for the bottom of the bottom metal frame portion 220 being exposed to enable an electrical and/or enhanced thermal contact to be made.
(17)
(18)
(19) Pilot holes 319 are shown for aligning the top metal frame portion and a bottom metal frame portion. The circular holes 320a on bottom frame portion enable the button shaped protruding features 325 including necking to lock together as shown in
(20)
(21)
(22)
(23) Advantages of disclosed embodiments include the protrusion features on the top metal frame portion with necking locking together to secure the top and bottom metal frame portions together during assembly. Disclosed leadframe locking avoid leadframes from moving in the X and Y direction (along the plane of the leadframes) during assembly processing, and helps ensure no separation between the top and bottom metal frame portions in the Z direction. Disclosed leadframes having mated metal frames portions are rigid and stable ensuring essentially no misalignment of leadframes from subsequent assembly processes, and thus a significant reduction in rejected devices for lack of solder ball attachment to the wire bond pads of the leadframe causing electrical opens.
(24) Disclosed embodiments can be integrated into a variety of assembly flows to form a variety of different semiconductor integrated circuit (IC) devices and related products. The assembly can comprise single semiconductor die or multiple semiconductor die, such as package-on-package (PoP) configurations comprising a plurality of stacked semiconductor die. The semiconductor die may include various elements therein and/or layers thereon, including barrier layers, dielectric layers, device structures, active elements and passive elements including source regions, drain regions, bit lines, bases, emitters, collectors, conductive lines, conductive vias, etc. Moreover, the semiconductor die can be formed from a variety of processes including bipolar, CMOS, BiCMOS and MEMS. Those skilled in the art to which this disclosure relates will appreciate that many other embodiments and variations of embodiments are possible within the scope of the claimed invention, and further additions, deletions, substitutions and modifications may be made to the described embodiments without departing from the scope of this disclosure.