POLYSILSESQUIOXANE RESIN COMPOSITION AND LIGHT-SHIELDING BLACK RESIST COMPOSITION CONTAINING SAME

Abstract

The present invention relates to a polysilsesquioxane resin composition having a high heat resistance and low dielectric constant and applicable to a liquid crystal display, an OLED, a touch panel, electronic paper, a flexible display, etc. and a black resist composition for light-shielding comprising the same. More specifically, the present invention relates to a light-shielding black resist composition having high heat resistance and low dielectric characteristics, which comprises: 1) a polysilsesquioxane random copolymer resin composition, which comprises a polar heterocyclic structure and can be cured by UV rays; 2) a carbon black dispersion liquid prepared by dispersing and coating in the polysilsesquioxane resin; and 3) a photoinitiator. The black resist resin composition of the present invention has excellent heat resistance even in a post process at high temperature of at least 350 C., no optical density (O.D.) deterioration, and can satisfy low dielectric properties at the same time, compared with conventional acrylic or cardo-based black resist.

Claims

1. A polysilsesquioxane random copolymer comprising a heterocyclic structure represented by following Formula 1: ##STR00011## where X is selected from the group consisting of a bond, linear or branched C.sub.1-20 alkylene group, C.sub.1-20alkenylene group, C.sub.1-20alkynylene group, C.sub.6-18 arylene group, oxa group and carbonyl group, R.sub.1 to R.sub.5 are the same as or different from each other and each independently selected from the group consisting of hydrogen, deuterium, linear or branched C.sub.1-20 alkyl group, C.sub.1-20 alkenyl group, carbonyl group, C.sub.3-40cycloalkyl group, heterocycloalkyl group having nuclear atoms of 3 to 40, heterocycloalkenyl group having nuclear atoms of 3 to 40, C.sub.6-18 aryl group and an heteroaryl group having nuclear atoms of 5 to 60, the alkyl group, alkenyl group, alkynyl group, cycloalkyl group, heterocycloalkyl group, heterocycloalkenyl group, aryl group, carbonyl group, and heteroaryl group are each independently at least one selected from the group consisting of deuterium, halogen, hydroxy, CN, linear or branched C.sub.1-12 alkyl group, C.sub.1-12 alkenyl group, C.sub.1-6 alkoxy group, carbonyl group, amine group, isocyanate group, heterocycloalkenyl group having nuclear atoms of 3 to 40, sulfonic acid group, C.sub.6-18 aryl group, N.sub.3, CONH.sub.2, OR, NRR, SH and NO.sub.2, and at this time when substituted with a plurality of substituents, they are the same as or different from each other, the R and R are selected from the group consisting of hydrogen, deuterium, linear or branched C.sub.1-12 alkyl group, C.sub.1-12 alkenyl group, C.sub.3-40 cycloalkyl group, heterocycloalkyl group having nuclear atoms of 3 to 40, heterocycloalkenyl group having nuclear atoms of 3 to 40, C.sub.6-18 aryl group and heteroaryl group having nuclear atoms of 5 to 60.

2. The polysilsesquioxane random copolymer of claim 1, R.sub.1 to R.sub.5 are selected from the group consisting of C.sub.1-6 alkylcarbonyl group, linear or branched C.sub.1-20 alkyl group and C.sub.6-18 aryl group, and the alkylcarbonyl group, alkyl group and aryl group are each independently at least one selected from the group consisting of linear or branched C.sub.1-12 alkyl, C.sub.1-20 alkenyl group, heterocycloalkenyl group having nuclear atoms of 3 to 40, sulfonic acid group, C.sub.6-18 aryl group, N.sub.3, CONH.sub.2, OR, NRR, SH and NO.sub.2, and at this time when substituted with a plurality of substituents, they are the same as or different from each other, the R and R are selected from the group consisting of hydrogen, deuterium, linear or branched C.sub.1-12 alkyl group, C.sub.1-12 alkenyl group, C.sub.3-40 cycloalkyl group, heterocycloalkyl group having nuclear atoms of 3 to 40, heterocycloalkenyl group having nuclear atoms of 3 to 40, C.sub.6-18 aryl group and heteroaryl group having nuclear atoms of 5 to 60.

3. The polysilsesquioxane random copolymer of claim 1, wherein R.sub.1 to R.sub.5 are selected from the group consisting of: ##STR00012## ##STR00013## where, * denotes a binding site; n is an integer of 1 to 5, m is an integer of 1 or 2, l is an integer of 1 to 5, p is an integer of 1 to 3, Y is at least one selected from the group consisting of deuterium, C.sub.1-12 alkyl group, halogen, trifluoromethyl, hydroxy, aldehyde group, amine group, isocyanate group, CN, sulfonic acid group, N.sub.3, CONH.sub.2, OR, SH and NO.sub.2, and the R and R are selected from the group consisting of hydrogen, deuterium, linear or branched C.sub.1-20 alkyl group, C.sub.1-20 alkenyl group, C.sub.3-40cycloalkyl group, heterocycloalkyl group having nuclear atoms of 3 to 40, heterocycloalkenyl group having nuclear atoms of 3 to 40, C.sub.6-18 aryl group and heteroaryl group having nuclear atoms of 5 to 60.

4. The polysilsesquioxane random copolymer of claim 3, wherein R.sub.1 to R.sub.5 are at least one selected from the group consisting of oxiranyl, oxetanyl, aziridinyl, pyrrolidinyl, imidazolyl, oxazolyl, thiazolyl, pyrrolyl, furyl, thiophenyl, pyridinyl, azepanyl, azepinyl, cinnamoyl, coumarinyl, azidophenyl, acrylic group, methacrylic group, vinyl group and thiol group.

5. The polysilsesquioxane random copolymer of claim 1, which has a weight average molecular weight (Mw) of 500 to 50,000 and a polydispersity index of 1.0 to 10.0.

6. Black resist composition for light-shielding comprising: a polysilsesquioxane random copolymer of claim 1; a carbon black dispersion liquid; a photoinitiator, and an organic solvent, wherein the carbon black dispersion liquid is prepared by dispersing and coating a carbon black pigment in the polysilsesquioxane random copolymer of claim 1.

7. The black resist composition for light-shielding of claim 6, which comprises the polysilsesquioxane random copolymer of 5 to 30 weight %; the carbon black dispersion liquid of 2 to 65 weight %; the photoinitiator of 0.1 to 4 weight %; and the organic solvent of 1 to 82.9 weight %.

8. The black resist composition for light-shielding of claim 6, wherein the carbon black pigment is at least one selected from the group consisting of carbon black, titanium black, anilyl black and perylene black.

9. The black resist composition for light-shielding of claim 6, wherein the carbon black pigment has an average particle diameter of 20 nm to 200 nm.

10. The black resist composition for light-shielding of claim 6, wherein the carbon black dispersion liquid further comprises a surfactant and the surfactant is at least one selected from the group consisting of an anionic surfactant, a cationic surfactant, a nonionic surfactant, an amphoteric surfactant, a polyamine-based surfactant and a polyester-based surfactant.

11. The black resist composition for light-shielding of claim 10, wherein the surfactant comprises 0.01 to 10 weight % based on 100 weight % of the black resist composition for light-shielding.

12. An Interlayer insulating film for a display and a semiconductor comprising the black resist composition for light-shielding of claim 6.

13. A planarization film for a display and a semiconductor comprising the black resist composition for light-shielding of claim 6.

14. A passivation insulating film for a display and a semiconductor comprising the black resist composition for light-shielding of claim 6.

15. A light-shielding pattern layer for an OLED comprising the black resist composition for light-shielding of claim 6.

16. A pixel defining layer for an OLED comprising the black resist composition for light-shielding of claim 6.

17. A black matrix for a touch panel comprising the black resist composition for light-shielding of claim 6.

18. A black matrix for a liquid crystal display comprising the black resist composition for light-shielding of claim 6.

Description

DESCRIPTION OF DRAWINGS

[0046] FIG. 1 illustrates the molecular weight of the polysilsesquioxane random copolymer according to Synthesis Example 1 of the present invention.

[0047] FIG. 2 illustrates the molecular weight of the polysilsesquioxane random copolymer according to Synthesis Example 2 of the present invention.

[0048] FIG. 3 illustrates the molecular weight of the polysilsesquioxane random copolymer according to Synthesis Example 3 of the present invention.

[0049] FIG. 4 illustrates the molecular weight of the polysilsesquioxane random copolymer according to Synthesis Example 4 of the present invention.

[0050] FIG. 5 illustrates the molecular weight of the polysilsesquioxane random copolymer according to Synthesis Example 5 of the present invention.

[0051] FIG. 6 is an SEM (scanning electron microscope) photograph showing the pattern resolution of the black resist composition for light-shielding of the present invention.

BEST MODE

[0052] Hereinafter, examples of the present invention will be described in detail to understand the present invention. The present invention may, however, be embodied in many different forms and should not be limited to the embodiments set forth herein in order to clearly illustrate the present invention for those skilled in the art to which the present invention pertains.

Synthesis Example 1

Synthesis of Polysilsesquioxane Random Copolymer Containing Heterocycle 1

[0053] ##STR00006##

[0054] N-(trimethoxysilyl)propylimidazole of 80.92 g (0.30 mol), diphenyldimethoxysilane of 85.85 g (0.30 mol), triethoxy [3-[(3-ethyl-3-oxetanyl) methoxy] propyl] silane of 75.06 g (0.20 mol), 3-(trimethoxysilyl) propyl methacrylate of 58.17 g (0.20 mol) and propylene glycol monomethyl ether acetate of 200 g were weighed to prepare a solution and a mixture of 17 g of 35% aqueous HCl and 337 g of ultra-pure water was slowly added dropwise with stirring in a 2-L flask equipped with a funnel, a cooling tube and a stirrer. At this time, the temperature is maintained so that the exothermic temperature does not exceed 50 C. After completion of dropwise addition, the reaction temperature was raised to 80 C. and stirred for 24 hours.

[0055] After completion of the reaction, distilled water was added to recover the organic phase by phase separation, and residual solvent and water were removed by evaporation to obtain 120 g of polysilsesquioxane copolymer resin. The resulting copolymer resin was dissolved in 400 g of propylene glycol monomethyl ether acetate to prepare a resin solution having a solid content of 30%.

[0056] FIG. 1 shows the weight average molecular weight of the polysilsesquioxane random copolymer containing heterocycle prepared in Synthesis Example 1, and as a result of GPC measurement, the polydispersity index (PDI) of the copolymer resin was 1.74 and the weight average molecular weight (Mw) was of 4,000.

Synthesis Example 2

Synthesis of Polysilsesquioxane Random Copolymer Containing Heterocycles 2

[0057] ##STR00007##

[0058] Triethoxy[2-(2-pyridyl)]ethyl]silane, 90.51 g (0.30 mol), diphenyldimethoxysilane of 82.09 g (0.30 mol), triethoxy[3-(3-ethyl-3-oxetanyl) methoxy] propyl] silane of 71.78 g (0.20 mol), 3-(trimethoxysilyl)propyl methacrylate of 55.62 g (0.20 mol) and propylene glycol monomethyl ether acetate of 200 g were weighed to prepare a solution and a mixture of 17 g of 35% aqueous HCl and 337 g of ultra-pure water was slowly added dropwise with stirring in a 2-L flask equipped with a funnel, a cooling tube and a stirrer. At this time, the temperature is maintained so that the exothermic temperature does not exceed 50 C. After completion of dropwise addition, the reaction temperature was raised to 80 C. and stirred for 24 hours.

[0059] After completion of the reaction, distilled water was added to recover the organic phase by phase separation, and residual solvent and water were removed by evaporation to obtain 110 g of polysilsesquioxane copolymer resin. The resulting copolymer resin was dissolved in 365 g of propylene glycol monomethyl ether acetate to prepare a resin solution having a solid content of 30%.

[0060] FIG. 2 shows the weight average molecular weight of the polysilsesquioxane random copolymer containing heterocycle prepared in Synthesis Example 2, and as a result of GPC measurement, the polydispersity index (PDI) of the copolymer resin was 1.77 and the weight average molecular weight (Mw) was of 3,990.

Synthesis Example 3

Synthesis of Polysilsesquioxane Random Copolymer Containing Heterocycles 3

[0061] ##STR00008##

[0062] Triethoxy[2-(2-pyridyl)]ethyl]silane of 97.04 g (0.30 mol %), diphenyldimethoxysilane of 88.02 g (0.30 mol %), N-(trimethoxysilyl)propyl imidazole of 55.31 g (0.20 mol %), 3-(trimethoxysilyl)propyl methacrylate of 55.62 g (0.20 mol %) and propylene glycol monomethyl ether acetate of 200 g were weighed to prepare a solution and a mixture of 17 g of 35% aqueous HCl and 337 g of ultra-pure water was slowly added dropwise with stirring in a 2-L flask equipped with a funnel, a cooling tube and a stirrer. At this time, the temperature is maintained so that the exothermic temperature does not exceed 50 C. After completion of dropwise addition, the reaction temperature was raised to 80 C. and stirred for 24 hours.

[0063] After completion of the reaction, distilled water was added to recover the organic phase by phase separation, and residual solvent and water were removed by evaporation to obtain 110 g of polysilsesquioxane copolymer resin. The resulting copolymer resin was dissolved in 330 g of propylene glycol monomethyl ether acetate to prepare a resin solution having a solid content of 30%.

[0064] FIG. 3 shows the weight average molecular weight of the polysilsesquioxane random copolymer containing heterocycle prepared in Synthesis Example 3, and as a result of GPC measurement, the polydispersity index (PDI) of the copolymer resin was 1.74 and the weight average molecular weight (Mw) was of 2,860.

Synthesis Example 4

Synthesis of Polysilsesquioxane Random Copolymer Containing Heterocycle 4

[0065] ##STR00009##

[0066] Triethoxy[2-(2-pyridyl)]ethyl]silane of 103.86 q (0.30 mol %). diphenyldimethoxysilane of 94.21 g (0.30 mol %), vinyltrimethoxysilane of 38.10 g (0.20 mol %), 3-(trimethoxysilyl)propyl methacrylate of 63.83 g (0.20 mol %) and propylene glycol monomethyl ether acetate of 200 g were weighed to prepare a solution and a mixture of 17 g of 35% aqueous HCl and 337 g of ultra-pure water was slowly added dropwise with stirring in a 2-L flask equipped with a funnel, a cooling tube and a stirrer. At this time, the temperature is maintained so that the exothermic temperature does not exceed 50 C. After completion of dropwise addition, the reaction temperature was raised to 80 C. and stirred for 24 hours.

[0067] After completion of the reaction, distilled water was added to recover the organic phase by phase separation, and residual solvent and water were removed by evaporation to obtain 115 g of polysilsesquioxane copolymer resin. The resulting copolymer resin was dissolved in 380 g of propylene glycol monomethyl ether acetate to prepare a resin solution having a solid content of 30%.

[0068] FIG. 4 shows the weight average molecular weight of the polysilsesquioxane random copolymer containing heterocycle prepared in Synthesis Example 4, and as a result of GPC measurement, the polydispersity index (PDI) of the copolymer resin was 1.90 and the weight average molecular weight (Mw) was of 4,160.

Synthesis Example 5

Synthesis of Polysilsesquioxane Random Copolymer Containing Heterocycle 5

[0069] ##STR00010##

[0070] N-(trimethoxysilyl)propyl imidazole of 96.50 g (0.30 mol), diphenyldimethoxysilane of 99.19 g (0.30 mol %), vinyltrimethoxysilane of 40.11 g (0.20 mol %), 3-(trimethoxysilyl)propyl methacrylate of 67.20 g (0.20 mol %) and propylene glycol monomethyl ether acetate of 200 g were weighed to prepare a solution and a mixture of 17 g of 35% aqueous HCl and 337 g of ultra-pure water was slowly added dropwise with stirring in a 2-L flask equipped with a funnel, a cooling tube and a stirrer. At this time, the temperature is maintained so that the exothermic temperature does not exceed 50 C. After completion of dropwise addition, the reaction temperature was raised to 80 C. and stirred for 24 hours. After completion of the reaction, distilled water was added to recover the organic phase by phase separation, and residual solvent and water were removed by evaporation to obtain 125 g of polysilsesquioxane copolymer resin. The resulting copolymer resin was dissolved in 410 g of propylene glycol monomethyl ether acetate to prepare a resin solution having a solid content of 30%.

[0071] FIG. 5 shows the weight average molecular weight of the polysilsesquioxane random copolymer containing heterocycle prepared in Synthesis Example 5, and as a result of GPC measurement, the polydispersity index (PDI) of the copolymer resin was 1.68 and the weight average molecular weight (Mw) was of 4,710.

Example 1

Preparation of Polysilsesquioxane-Based Black Resist Resin Composition 1

[0072] A heterocycle-containing polysilsesquioxane random copolymer resin (weight average molecular weight 4,000) solution prepared in the Synthesis Example 1 of 100 parts by weight as a solid content fraction, a dispersion of carbon black coated with the copolymer resin (average particle diameter 80 nm, 30% solution) of 200 parts by weight as a solid content fraction, acylphosphine oxide (Trade name: Lucirin TPO, BASF) of 2 parts by weight and oxime ester (trade name: Irgacure OXE 02, BASF) of 1 part by weight as a photoinitiator and a silicone surfactant of 0.5 part by weight were diluted to 30 parts by weight of the solid content of the composition, by using propylene glycol monomethyl ether acetate as a diluting solvent and filtered through a pore size 2.0 m PTFE membrane filter to obtain a liquid black resist resin composition.

Example 2

Preparation of Polysilsesquioxane-Based Black Resist Resin Composition 2

[0073] A polysilsesquioxane-based black resist resin composition was prepared in the same manner as in Example 1 by using a solution of the heterocyclic polysilsesquioxane random copolymer resin (weight average molecular weight: 3,990) prepared in the Synthesis Example 2 instead of the heterocyclic-containing polysilsesquioxane random copolymer resin prepared in the Synthesis Example 1.

Example 3

Preparation of Polysilsesquioxane-Based Black Resist Resin Composition 3

[0074] A polysilsesquioxane-based black resist resin composition was prepared in the same manner as in Example 1 by using a solution of the heterocyclic polysilsesquioxane random copolymer resin (weight average molecular weight: 2,860) prepared in the Synthesis Example 3 instead of the heterocyclic-containing polysilsesquioxane random copolymer resin prepared in the Synthesis Example 1.

Example 4

Preparation of Polysilsesquioxane-Based Black Resist Resin Composition 4

[0075] A polysilsesquioxane-based black resist resin composition was prepared in the same manner as in Example 1 by using a solution of the heterocyclic polysilsesquioxane random copolymer resin (weight average molecular weight: 4,160) prepared in the Synthesis Example 4 instead of the heterocyclic-containing polysilsesquioxane random copolymer resin prepared in the Synthesis Example 1.

Example 5

Preparation of Polysilsesquioxane-Based Black Resist Resin Composition 5

[0076] A polysilsesquioxane-based black resist resin composition was prepared in the same manner as in Example 1 by using a solution of the heterocyclic polysilsesquioxane random copolymer resin (weight average molecular weight: 4,710) prepared in the Synthesis Example 5 instead of the heterocyclic-containing polysilsesquioxane random copolymer resin prepared in the Synthesis Example 1.

Comparative Example 1

[0077] A siloxane resin (Dow Corning's Xiameter RSN-0217, Mw 2,500) of 100 parts by weight as a solid content fraction Instead of the synthetic copolymer resin of the present invention, carbon black (average particle diameter 100 nm) of 100 parts by weight instead of a coloring dispersion of the present invention, acylphosphine oxide (Trade name: Lucirin TPO, BASF) of 2 parts by weight and oxime ester (trade name: Irgacure OXE 02, BASF) of 1 part by weight as a photoinitiator and a silicone surfactant of 0.5 part by weight were diluted to 30 parts by weight of the solid content of the composition, by using propylene glycol monomethyl ether acetate as a diluting solvent and filtered through a pore size 2.0 m PTFE membrane filter to obtain a liquid black resist resin composition.

Comparative Example 2

[0078] Poly(4-vinylphenyl-co-methylmethacrylate, Mw 8,000) acrylic copolymer of 100 parts by weight in a solid content faction instead of the synthetic copolymer resin of the present invention and carbon black (average particle diameter 100 nm) of 100 parts by weight instead of a coloring dispersion of the present invention, acylphosphine oxide (Trade name: Lucirin TPO, BASF) of 2 parts by weight and oxime ester (trade name: Irgacure OXE 02, BASF) of 1 part by weight as a photoinitiator and a silicone surfactant of 0.5 part by weight were diluted to 30 parts by weight of the solid content of the composition, by using propylene glycol monomethyl ether acetate as a diluting solvent and filtered through a pore size 2.0 m PTFE membrane filter to obtain a liquid black resist resin composition.

[0079] The properties of the resin compositions of the above Examples and Comparative Examples were measured as described below, and the results are shown in Table 1 below.

[0080] <1. Coating Film Formation>

[0081] The black resist composition was spin-coated on a glass substrate at a speed of 1,000 rpm to form a film and then the film was baked in a soft baking process with a hot plate for 100, 120 seconds and the thickness of the coated film was measured by using an optical thickness meter (trade name: CAMAC ST-4000).

[0082] <2. Pattern Evaluation>

[0083] The resin composition was radiated by energy of 100 mJ/cm.sup.2 (i-line 365 nm standard, initial 2.0 m thick) using a mask aligner (product name: SUSS MA-6) with a 5 m to 300 m line & space 1:1 spacing photomask and G, H, I-line ultraviolet lamps, was developed in a 2.38% TMAH dilute alkali aqueous solution for 60 seconds, and washed with ultrapure water. The obtained pattern substrate was heated in an oven at 230 C. for 30 minutes. The silicon wafer or glass substrate on which the pattern was formed was observed with an electron microscope and when a 10 m pattern was formed, it was determined to be good, and the sample which could not form the 10 m pattern or had severe scum was determined to be bad.

[0084] <3. Residual Film Ratio Evaluation>

[0085] The residual film ratio was calculated by the following Equation 1:

Residual film ratio (%)=(film thickness after development and curing/initial thickness)100[Equation 1]

[0086] <4. Heat Resistance Evaluation>

[0087] After curing, thermogravimetric analysis (TGA, Perkin Elmer) was performed and a weight loss ratio according to temperature (loss wt %) was measured by increasing temperature at speed of 10 C./min from room temperature to 600 C. At this time, when the weight reduction rate at 400 C. was less than 10%, it was determined to be good, normal for 10% to 40%, and bad for more than 40%.

[0088] <5. Chemical Resistance Evaluation>

[0089] After forming a coating film, the film was cured and then immersed in a PR stripping solution (trade name, LT-360) 40 C. for 10 minutes, and the rate of swelling change of film thickness was calculated. A swelling of less than 5% was determined good and a swelling of at least 5% was determined bad.

[0090] <6. Dielectric Constant Evaluation>

[0091] After forming a coating film on an ITP substrate, the film was cured and a metal-insulator-metal (MIM) evaluation cell was fabricated by depositing a 1.0-diameter aluminum electrode thereon. In order to measure the dielectric constant, the capacitance (C) of the coated resist film of the evaluation cell was measured using an LCR-meter (Agilent Co. 4284), and the dielectric constant was calculated by the following Equation 2.

[0092] In the following Equation 2, d=thickness of resist film, A=area of deposited electrode, .sub.0 is a constant of dielectric constant of vacuum (8.85510.sup.12 F/m) and is dielectric constant of the resist film to be obtained.

C=(.sub.0A)/d[Equation 2]

[0093] <7. Evaluation of Moisture Absorption Rate>

[0094] After forming a coating film, the film was cured and immersed in distilled water at room temperature for 72 hours, and the change rate of the film thickness swelling was calculated. It was determined to be good for swelling of less than 3% and bad for swelling of more than 3%.

[0095] <8. Sheet Resistance Measurement>

[0096] After forming a coating film, the film was cured and surface resistance value was measured using a high resistance meter of Keithley 6517B.

[0097] <9. Optical Density; O.D. Value Measurement>

[0098] After forming a coating film, the film was cured and O.D. value was measured using an instrument X-Rite 361T.

TABLE-US-00001 TABLE 1 Moisture Residual Heat Chemical Dielectric absorption Sheet O.D. pattern film ratio Resistance resistance constant rate resistance (m) Example 1 Good 83 Good Good 6.31 Good 3.5E+12 3.1 Example 2 Good 84 Good Good 6.54 Good 5.7E+12 3.2 Example 3 Good 82 Good Good 6.29 Good 4.2E+12 3.2 Example 4 Good 85 Good Good 6.43 Good 4.6E+12 3.1 Example 5 Good 84 Good Good 6.37 Good 3.9E+12 3.2 Comparative Bad 71 Bad Bad 42.5 Bad 5.6E+12 3.1 Example 1 Comparative Bad 65 Bad Bad 45.8 Bad 7.1E+12 3.0 Example 2

[0099] As indicated in the above Table 1, the black resist composition using the polysilsesquioxane random copolymer according to the present invention and the carbon black dispersion liquid prepared by dispersing and coating in the polysilsesquioxane random copolymer composition exhibited not only excellent heat resistance capable of withstanding in process at a high temperature but also excellent high residual film ratio, chemical resistance and pattern resolution, in contrast with the conventional black resist composition.

[0100] In addition, the resist film formed using the composition of the present invention exhibits low dielectric and high resistance characteristics and a high optical density value as compared with the comparative example so that a novel black resist having excellent reliability and high performance can be expected.

[0101] Therefore, the black resist film obtained from the composition of the present invention can be used for a black matrix for a color filter or a black matrix for a color filter on TFT (COT) process, a black bezel for a cover glass-integrated touch panel, a pixel defined layer for an OLED, a light-shielding layer for LTPS (Low-temperature polysilicon) or an oxide TFT, a light-shielding layer for a flexible display, and a polarizing film replacement layer on various displays.

INDUSTRIAL APPLICABILITY

[0102] The present invention relates to a polysilsesquioxane resin composition and a black resist composition for light-shielding comprising the same and more specifically, to the black resist composition for light-shielding, which has excellent heat resistance in even post-process at a high temperature and low dielectric performance applicable to a color filter on TFT (COT) process, a cover glass-integrated touch panel, an OLED and a flexible display.