Bonding pad structure of a semiconductor device

Abstract

An object of the present invention is to stabilize and strengthen the strength of a bonding part between a metal electrode on a semiconductor chip and metal wiring connected thereto using a simple structure. Provided is a semiconductor device including a metal layer 130 on a surface of a metal electrode 120 formed on a semiconductor chip 110, the metal layer 130 consisting of a metal or an alloy different from a constituent metal of the metal electrode 120, metal wiring 140 is connected to the metal layer 130 via a bonding part 150, wherein the constituent metal of the metal layer 130 is a metal or an alloy different from the constituent metal of the metal electrode 120, and the bonding part 150 has an alloy region harder than the metal wiring 140.

Claims

1. A semiconductor device comprising: a semiconductor chip; a metal electrode formed on a surface of the semiconductor chip; and metal wiring connected to the metal electrode via a bonding part, wherein an outer peripheral of the metal wiring is covered with a metal layer consisting of a metal or an alloy different from a constituent metal of the metal electrode, the bonding part has an alloy region harder than the metal wiring, and the metal layer is formed on an upper surface and a lower surface of at least the metal wiring, and a part of the lower surface contacts the bonding part.

2. The semiconductor device according to claim 1, wherein the metal layer is an alloy essentially consisting of Zn and Al, and the metal wiring is one of Ag, Al, Au, Cu, and an alloy essentially consisting of one of Ag, Al, Au, and Cu.

3. The semiconductor device according to claim 1, wherein the metal layer is an alloy essentially consisting of Au, and the metal wiring is one of Al, Cu, and an alloy essentially consisting of Al and Cu.

4. The semiconductor device according to claim 1, wherein the metal layer is one of Sn and an alloy essentially consisting of Sn, and the metal wiring is one of Ag, Au, Cu, and an alloy essentially consisting of one of Ag, Au, and Cu.

5. The semiconductor device according to claim 1, wherein a flat region is formed on the metal wiring that is covered by the metal layer, the flat region being positioned at a side opposite from the bonding part, a longitudinal length of the flat region, which is determined in a wiring direction along which the metal wiring extends, is the same as a length of the bonding part, which is determined in the wiring direction.

6. The semiconductor device according to claim 5, wherein the flat region is shaped while the bonding part is formed by ultrasonic being applied to the metal wiring.

7. A semiconductor device comprising: a semiconductor chip; a metal electrode formed on a surface of the semiconductor chip, the metal electrode being formed of a constituent metal; a metal layer formed on a surface of the metal electrode opposite to the semiconductor chip; and metal wiring connected to the metal layer via a bonding part such that the boding part is disposed on a surface of the metal layer and intervenes between the metal layer and the metal wiring, wherein the metal layer is either made of Sn, or an alloy essentially consisting of Sn, the metal wiring is either made of one of Ag and Cu or an alloy essentially consisting of one of Ag and Cu, the bonding part has an alloy region harder than the metal wiring, defining a first interface that is between the metal layer and the bonding part, the first interface invades the metal layer by penetrating toward the metal layer from the surface of the metal layer, and defining a second interface that is between the bonding part and the metal wiring, the second interface invades the metal wiring by penetrating toward the metal wiring from the surface of the metal layer.

8. The semiconductor device according to claim 7, wherein a flat region is formed on the metal wiring, the flat region being positioned at a side opposite from the bonding part, a longitudinal length of the flat region, which is determined in a wiring direction along which the metal wiring extends, is substantially the same as a length of the bonding part, which is determined in the wiring direction.

9. The semiconductor device according to claim 8, wherein the flat region is shaped while the bonding part is formed by ultrasonic being applied to the metal wiring.

10. A semiconductor device comprising: a semiconductor chip; a metal electrode formed on a surface of the semiconductor chip; and metal wiring connected to the metal electrode via a bonding part, wherein an outer peripheral of the metal wiring is covered with a metal layer consisting of a metal or an alloy different from a constituent metal of the metal electrode, the bonding part has an alloy region harder than the metal wiring, the bonding part contacts the metal electrode and the metal wiring, a flat region is formed on the metal wiring that is covered by the metal layer, the flat region being positioned at a side opposite from the bonding part, and a longitudinal length of the flat region, which is determined in a wiring direction along which the metal wiring extends, is the same as a length of the bonding part, which is determined in the wiring direction.

11. The semiconductor device according to claim 10, wherein the metal layer is an alloy essentially consisting of Zn and Al, and the metal wiring is one of Ag, Al, Au, Cu, and an alloy essentially consisting of one of Ag, Al, Au, and Cu.

12. The semiconductor device according to claim 10, wherein the metal layer is an alloy essentially consisting of Au, and the metal wiring is one of Al, Cu, and an alloy essentially consisting of Al and Cu.

13. The semiconductor device according to claim 10, wherein the metal layer is one of Sn and an alloy essentially consisting of Sn, and the metal wiring is one of Ag, Au, Cu, and an alloy essentially consisting of one of Ag, Au, and Cu.

14. The semiconductor device according to claim 10, wherein the flat region is shaped while the bonding part is formed by ultrasonic being applied to the metal wiring.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a cross-sectional view showing a bonding structure of a semiconductor device according to a first embodiment of the present invention;

(2) FIG. 2 is a cross-sectional view showing a bonding process of the bonding structure illustrated in FIG. 1;

(3) FIG. 3 is a cross-sectional view showing a bonding process of the bonding structure illustrated in FIG. 1;

(4) FIG. 4 is a cross-sectional view showing a bonding process of the bonding structure illustrated in FIG. 1;

(5) FIGS. 5A and 5B are SEM photographs of the vicinity of the bonding structure illustrated in FIG. 1;

(6) FIG. 6 is a photograph of a front view of a sample of the bonding structure according to the first embodiment of the present invention;

(7) FIGS. 7A and 7B are a table and a graph, respectively, illustrating a result of a shear strength test of metal wiring of the sample illustrated in FIG. 6;

(8) FIGS. 8A and 8B are EDX images of the vicinity of a bonding structure according to a modification of the first embodiment of the present invention;

(9) FIG. 9 is a cross-sectional view showing an exemplary mounting structure of a semiconductor device according to the first embodiment of the present invention;

(10) FIG. 10 is a cross-sectional view showing a bonding structure of a semiconductor device according to a second embodiment of the present invention; and

(11) FIG. 11 is a cross-sectional view showing a bonding structure of the semiconductor device according to a third embodiment of the present invention.

DESCRIPTION OF EMBODIMENTS

(12) Hereinafter, a semiconductor device according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 9.

(13) FIG. 1 is a cross-sectional view showing a bonding structure of a semiconductor device 100 according to the first embodiment of the present invention. In FIG. 1, symbol 110 denotes a semiconductor chip, and symbol 120 denotes a metal electrode formed on the semiconductor chip 110. The metal electrode here is Al, Cu, or Ni. Symbol 130 denotes a metal layer formed on a surface of the metal electrode 120. The metal layer here consists of an AlZn alloy. A component denoted by symbol 140 and bonded to the metal layer 130 is metal wiring made of Al and having a wire shape. At a bonding interface between the metal layer 130 and the metal wiring 140, a bonding part 150 made of an alloy of the metal layer 130 and the metal wiring 140 is formed.

(14) Here, a bonding process of the bonding structure of the semiconductor device 100 illustrated in FIG. 1 will be described. First, as illustrated in FIG. 2, a metal layer 130a made of Zn is laminated on the metal electrode 120 made of Al formed on the semiconductor chip 110 to form a laminated structure. Methods for forming the metal layer 130a include partial plating and partial vapor deposition. Alternatively, a metal thin plate 130a made of an AlZn alloy may be arranged at an appropriate region on the metal electrode 120.

(15) Next, this laminated structure is heated to 419 C. (that is, the melting point of Zn) or higher. This results in formation of a eutectic alloy of Zn and Al, in which Al is mixed in the Zn layer at a ratio from 2.4 at % to 33 at % as illustrated in FIG. 3. Note that a heating temperature is more preferably within a range from the eutectic point (382 C.) of the AlZn alloy to 460 C. A high bonding strength can be obtained in the above temperature range. Heating time is preferably 1 minute to 10 minutes. Furthermore, at the time of the process in FIG. 2, an Ag thin film, an Au thin film or the like may be formed in advance on the surface of the metal electrode 120 for the purpose of preventing oxidation or other purposes. In such a case, the thin film made of Ag or Au in the portion of the surface of the metal electrode 120 in contact with the metal layer 130 disappears when the state illustrated in FIG. 3 is reached by heating.

(16) Next, as illustrated in FIG. 4, the metal wiring 140 is ultrasonically bonded on the metal layer 130 using a dedicated tool T to form a bonding structure. At this point, the bonding strength in a bonding surface of the bonding part has microscopic dispersion. Subsequently, this bonding structure is heated to 419 C. or higher. This results in that the bonding interface of the bonding part 150, including the metal wiring 140 side, becomes a liquid phase. As a result, the bonding interface having the bonding strength dispersion disappears. Thereafter, returning to a room temperature and solidifying forms the bonding part 150 illustrated in FIG. 1.

(17) Because the bonding part 150 formed through the bonding process as illustrated FIGS. 2 to 4 contains the eutectic alloy described above, the hardness thereof is higher than that of the Al metal wiring 140. This leads to increase a tolerance of the alloy region against a thermal stress. An oxide film is formed on a surface of the AlZn alloy at this time. Even if this alloy turns into a liquid phase, breakage of the oxide film does not easily occur. However, in the region bonded by the ultrasonic bonding method, the oxide film is broken by ultrasonic vibration and metal atoms are bonded to each other. Therefore, an alloying reaction proceeds selectively only in this portion.

(18) FIGS. 5A and 5B illustrate SEM photographs showing the vicinity of the bonding structure illustrated in FIG. 1. FIG. 5A illustrates a state before heating. When a bonding interface is carefully observed, a bonded region and a region having a void are observed. FIG. 5B illustrates a state after heating. As apparently illustrated, the bonding part 150 is formed over the inside of the metal wiring 140 due to an alloying reaction resulted from melting by heat and re-solidifying. Because the hardness of the bonding part 150 is higher than that of the metal wiring 140, high connection reliability can be secured even if a thermal stress is applied to the bonding interface of the bonding part 150 due to a sudden temperature change.

(19) Next, a result of examining the bonding strength of a bonding structure in a sample of the semiconductor device according to the first embodiment of the present invention will be described. FIG. 6 is a photograph of a front view of the sample of the bonding structure according to the first embodiment. Symbols in FIG. 6 are the same as those used in FIGS. 1 to 4. In the sample, a metal layer 130 was formed by placing a small piece 130a of an AlZn alloy having a thickness of several tens of micrometers on the metal electrode 120 mainly/essentially consisting of Al and melting the small piece once to bond them together. Then, an Al wire was bonded to an upper surface thereof by the ultrasonic bonding method, and wires other than the bonding part were cut and removed to form four pieces of metal wiring 140 as illustrated in FIG. 6, which were then subjected to a shear strength test. Here, in the shear strength test, a load at the time when each of the pieces of metal wiring 140 in FIG. 6 was pushed laterally and broken was measured. Note that a cross section taken along a line segment L-L drawn on the metal wiring 140 on the lower right in FIG. 6 corresponds to FIGS. 5A and 5B described above.

(20) FIGS. 7A and 7B are a table and a graph, respectively, illustrating a result of the shear strength test of the metal wiring of the sample illustrated in FIG. 6. The shear strength test is performed at three levels including: a state before heating the bonding part; a state after heating; and a state after subjecting a heated sample to 1000 cycles between 40 C. and +250 C. (hereinafter referred to as after temperature cycles). Note that, in the sample before heating, one point could not be measured and evaluation was made only by three points.

(21) As apparent from FIG. 7A, in the sample before heating and only subjected to ultrasonic bonding of an Al wire, the shear strength was 479 g on the average, whereas in the sample after heating in which an alloy is formed, the average value was improved to 1177 g. After experiencing the temperature cycles, a stress is repeatedly applied to a bonding region due to a difference in coefficients of thermal expansion of the respective members, and the bonding strength decreases. Here, although the average value of shear strength decreased to 720 g after the temperature cycles even in the sample after heating, this is a higher value than the shear strength of the sample before heating, which can be regarded as the strength almost equivalent to that according to the conventional art. Therefore, the effect of the bonding structure of the present invention can be clearly confirmed.

(22) Note that the embodiment described above illustrates the example where the Al wire is used as the metal wiring 140; however, a similar structure can be implemented even when the metal wiring 140 consists of Cu or an alloy mainly/essentially consisting of Cu. Generally, when Cu is mixed in an AlZn alloy system, the liquidus temperature decreases, and Cu dissolves proactively in the liquid phase AlZn alloy. Thus, the bonding part 150 is alloyed like in the above embodiment.

(23) The metal layer 130 may be a metal mainly/essentially consisting of Au such as an AuGe alloy, and the metal electrode 120 and the metal wiring 140 may be selected from group consisting of Al, Cu, and an alloy mainly/essentially consisting of these. Alternatively, the metal layer 130 may be an alloy mainly/essentially consisting of Sn (for example, SnAgCu based (SAC) solder), and the metal electrode 120 and the metal wiring 140 may be selected from group consisting of Ag, Au, Cu and an alloy mainly/essentially consisting of these. For example, in the case where the metal layer 130 is an SAC solder, when such a bonding structure is heated to about 230 C. (that is, the melting point of Sn) after ultrasonic bonding, Sn is turned into a liquid phase but then soon form an intermetallic compound with a metal of the metal wiring 140, and a solidus line rises. Therefore, Sn in the liquid phase disappears at the applied temperature, and the bonding part 150 is alloyed. These intermetallic compounds generally have a high hardness to improve the reliability of the bonding part 150. Note that a heating temperature is more preferably 230 C.30 C.

(24) FIGS. 8A and 8B are EDX images of a sample in which the metal layer 130 consists of an AuGe alloy and the metal wiring 140 consists of Al. FIG. 8A illustrates a state after ultrasonic bonding and before heating. No alloy region was observed between the metal layer 130 and the metal wiring 140. On the other hand, FIG. 8B illustrates a state after heating, in which an alloyed bonding part 150 consisting of Al, Au, and Ge was formed. Note that a heating temperature is more preferably 356 C.50 C., which is the eutectic point of the AuGe alloy.

(25) FIG. 9 is a cross-sectional view illustrating an example of a mounting structure 200 to which the semiconductor device 100 according to the first embodiment of the present invention is applied. As illustrated in FIG. 9, the semiconductor device 100 illustrated in FIG. 1 is mounted on a substrate 210 made of an insulator or the like via an adhesion layer 260. Meanwhile, a metal electrode 220 is formed on another portion of the upper surface of the substrate 210. The metal electrode 220 is connected to an external terminal (not illustrated) of this mounting structure and exchanges electric current and/or electric signals with other external devices.

(26) In FIG. 9, one end 140a of the metal wiring 140 of the semiconductor device 100 is bonded to the metal electrode 120 via the metal layer 130. Another end 140b of the metal wiring 140 is bonded to the metal electrode 220 via a metal layer 230 similar to the metal layer 130. At this time, a bonding part 250 is formed between the metal wiring 140 and the metal layer 230 by an ultrasonic bonding method. This allows a bonding interface of the bonding part 250 to be alloyed and to improve bonding reliability.

(27) Next, a semiconductor device according to the second embodiment of the present invention will be described with reference to FIG. 10.

(28) FIG. 10 is a cross-sectional view showing a bonding structure of a semiconductor device 300 according to the second embodiment of the present invention. In this bonding structure, instead of providing the metal layer on the metal electrode 320 formed on the upper surface of the semiconductor chip 310, the outer surface of the metal wire 340 is covered with a metal layer 330 in advance. In such a combination, the metal wire 340 covered with the metal layer 330 is ultrasonically bonded to the upper surface of the metal electrode 320 in a similar manner to that of the first embodiment and a bonding part 350 is heated to a predetermined temperature to be alloyed. The alloyed bonding part 350 has a hardness higher than that of the metal wire. Thus, a similar effect to that of the case of the first embodiment is obtained.

(29) According to such a configuration, a structure with high connection reliability can be implemented by using the metal wire 340 covered with the metal layer 330 without performing the pretreatment of disposing the metal layer 330 on the metal electrode 320 of the semiconductor chip 310 in advance. Note that, also in this bonding structure, combinations of metals exemplified above can be used.

(30) Next, a semiconductor device according to the third embodiment of the present invention will be described with reference to FIG. 11.

(31) FIG. 11 is a cross-sectional view showing a bonding structure 400 of the semiconductor device according to the third embodiment of the present invention. In this bonding structure, a bump 440 is used instead of the metal wiring 140 used in the first embodiment. Furthermore, an insulating plate 460 formed with a metal electrode 421 is arranged at a position facing a semiconductor chip 410. Note that the metal electrode 421 is connected to an external terminal of this bonding structure (not illustrated) and is configured to exchange electric current and/or signals with other external devices.

(32) A metal electrode 420 is formed on the semiconductor chip 410 illustrated in FIG. 11, and the bump 440 is bonded to the metal electrode 420 via a metal layer 430. At this time, like in the first embodiment, a bonding part 450 alloyed by heating after ultrasonic bonding is formed between the metal layer 430 and the bump 440. Meanwhile, other surface of the bump 440 is bonded to the metal electrode 421 formed on the insulating plate 460 via a metal layer 431. A bonding part 451 alloyed by heating after ultrasonic bonding is likewise formed between the metal layer 431 and the bump 440.

(33) According to such a configuration, the metal electrode 420 of the semiconductor chip 410 and the metal electrode 421 of the insulating plate 460 are bonded via the bump 440. This results in saving the space and facilitating positioning. In addition, because the alloyed bonding parts 450 and 451 having a higher hardness than that of the bump 440 are formed between the bump 440 and the metal electrodes 420 and 421, high connection reliability can be ensured even after exposure of the temperature cycles.

(34) Although specific embodiments of the semiconductor device according to the present invention and modifications based thereon have been described above, the present invention is not necessarily limited thereto, and other structures are also within the scope of the present invention as long as they meet the scope of claims of the present invention.

REFERENCE SIGNS LIST

(35) 100, 300 Semiconductor device 110, 310, 410 Semiconductor chip 120, 220, 320, 420, 421 Metal electrode 130, 230, 330, 430, 431 Metal layer 140, 340, 440 Metal wiring 150, 250, 350, 450, 451 Bonding part 200, 400 Mounting structure 210, 460 Insulator (substrate), insulating plate