Electronic device including soldered surface-mount component

Abstract

The melting of die-bonding solder material is prevented even when soldering a surface-mount component formed using the die-bonding solder material on a printed circuit board using a mounting solder material. The surface-mount component formed using (SnSb)-based solder material having high melting point as the solder material for die pad, the (SnSb)-based solder material containing Cu not more than a predetermined quantity of Cu constituent and a main ingredient thereof being Sn, is soldered on a board terminal portion of a circuit board using (SnAgCuBi)-based solder material as the mounting solder material with the solder material being applied on the terminal portion. The melting of die-bonding solder material is prevented even at the heating temperature (240 degrees C. or less) of a reflow furnace.

Claims

1. An electronic device including a surface-mount component mounted on a circuit board, comprising: a surface-mount component, including a circuit element mounted on a lead frame, the circuit element having an electrode surface including a die bonding surface and having a first Ni plating layer on the die bonding surface, and the lead frame including a die pad electrode portion having a die pad electrode surface and a second Ni plating layer on the die pad electrode surface of the lead frame; the circuit element being bonded to the lead frame by a (SnSb)-based solder material between the first and second Ni plating layers, the (SnSb)-based solder material containing Sb in an amount of not less than 10% to less than 11% by mass and the balance of the (SnSb)-based solder material being Sn with impurities and in which Cu among the impurities is controlled to not more than 0.01%, which restrains the solidus temperature of the (SnSb)-based solder material from falling down by about 10 through 20 C.; and the lead frame including a lead portion and the lead portion being bonded to a board terminal portion of the circuit board by a (SnAgCuBi)-based solder material in which Ag is present within a range of 3% through 3.5% by mass, Cu is present within a range of 0.5% through 1.0% by mass, Bi is present within a range of 3% through 7% by mass, and the balance is Sn with impurities, the (SnAgCuBi)-based solder material being applied on the board terminal portion.

2. The electronic device of claim 1 wherein the circuit board includes a land portion and the lead portion of the lead frame is bonded to the land portion of the circuit board.

3. The electronic device of claim 1 wherein the (SnSb)-based solder material contains Cu in an amount of not more than 0.005% mass.

4. The electronic device of claim 1 wherein the (SnSb)-based solder material includes a mechanical strength improving component containing P and/or at least one of the elements Ni, Co, and Fe.

5. The electronic device of claim 4 wherein the (SnSb)-based solder material includes an amount of P within a range of 0.0001 through 0.01% by mass and an amount of at least one of Ni, Co, and Fe in a total amount of the at least one of Ni, Co, and Fe within a range of 0.01 through 0.1% by mass.

6. The electronic device of claim 1 wherein the lead portion of the lead frame of the surface-mount component is covered by a plating layer chosen from the group consisting of a Sn plating layer and a (SnBi) plating layer.

7. An electronic device including a surface-mount component mounted on a circuit board, comprising: a surface-mount component, including a circuit element mounted on a lead frame, the circuit element having an electrode surface including a die bonding surface and having a first Ni plating layer on the die bonding surface, and the lead frame including a die pad electrode portion having a die pad electrode surface and a second Ni plating layer on the die pad electrode surface of the lead frame; the circuit element being bonded to the lead frame by a (SnSb)-based solder material between the first and second Ni plating layers, and the (SnSb)-based solder material containing Sb in an amount of not less than 10% to less than 11% by mass and a mechanical strength improving component containing an amount of P within a range of 0.0001 through 0.01% by mass, and an amount of at least one of Ni, Co, and Fe in which a total amount of the at least one of the Ni, Co, and Fe is within a range of 0.01through 0.1% by mass, and the balance of the (SnSb)-based solder material being Sn with impurities and in which Cu among the impurities is controlled to not more than 0.01%, which restrains the solidus temperature of the (SnSb)-based solder material from falling down by about 10 through 20 C.; and the lead frame including a lead portion and the lead portion being bonded to a board terminal portion of the circuit board by a (SnAgCuBi)-based solder material in which Ag is present within a range of 3% through 3.5% by mass, Cu is present within a range of 0.5% through 1.0% by mass, Bi is present within a range of 3% through 7% by mass, and the balance is Sn with impurities, the (SnAgCuBi)-based solder material being applied on the board terminal portion.

8. The electronic device of claim 7 wherein the (SnSb)-based solder material contains Cu in an amount of not more than 0.005% mass.

9. An electronic device including a surface-mount component mounted on a circuit board, comprising: a surface-mount component, including a circuit element mounted on a lead frame, the circuit element having an electrode surface including a die bonding surface and having a first Ni plating layer on the die bonding surface, and the lead frame including a die pad electrode portion having a die pad electrode surface and a second Ni plating layer on the die pad electrode surface of the lead frame; the circuit element being bonded to the lead frame by a (SnSb)-based solder material between the first and second Ni plating layers, and the (SnSb)-based solder material containing Sb in an amount of not less than 10% to less than 11% by mass and the balance being Sn with impurities and in which Cu among the impurities is controlled to not more than 0.01% of the (SnSb)-based solder material, which restrains the solidus temperature of the (SnSb)-based solder material from falling down by about 10through 20 C., and the lead frame including a lead portion and the lead portion being bonded to a board terminal portion of the circuit board by a (SnAgCuBiIn)-based solder material in which Ag is present within a range of 2.8% through 3.3% by mass, Cu is present within a range of 0.5% through 1.0% by mass, Bi is present within a range of 2% through 5% by mass, and In is present within a range of 3% through 5% by mass, and in which the balance is Sn with, the (SnAgCuBiIn)-based solder material being applied on the board terminal portion.

10. The electronic device of claim 9 wherein the (SnSb)-based solder material contains Cu in an amount of not more than 0.005% mass.

11. The electronic device of claim 9 wherein the (SnSb)-based solder material includes a mechanical strength improving component containing P and/or at least one of the elements Ni, Co, and Fe.

12. The electronic device of claim 11 wherein the (SnSb)-based solder material includes an amount of P within a range of 0.0001through 0.01% by mass and an amount of at least one of Ni, Co, and Fe in a total amount of the at least one of Ni, Co and Fe within a range of 0.01 through 0.1% by mass.

13. The electronic device of claim 9 wherein the lead portion of the lead frame of the surface-mount component is covered by a plating layer chosen from the group consisting of a Sn plating layer and a (SnBi) plating layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A is a diagram showing an outline step when performing die bonding of IC chip.

(2) FIG. 1B is a diagram showing an outline step when performing the die bonding of IC chip.

(3) FIG. 1C is a diagram showing an outline step when performing the die bonding of IC chip.

(4) FIG. 1D is a diagram showing an outline step when performing the die bonding of IC chip.

(5) FIG. 1E is a diagram showing an outline step when performing the die bonding of IC chip.

(6) FIG. 2 is an enlarged photograph showing a preheated condition of particles in the solder material.

(7) FIG. 3 is a photograph in which a part of FIG. 2 is further enlarged.

(8) FIG. 4 is an enlarged photograph showing an imperfect fused condition of the solder material based on an insufficient heating.

(9) FIG. 5 is a photograph in which a part of FIG. 4 is further enlarged.

(10) FIG. 6 is an enlarged photograph showing a perfect fused condition of the solder material according to these inventions.

(11) FIG. 7 is a photograph in which a part of FIG. 6 is further enlarged.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

(12) Best Mode for Carrying Out the Invention

(13) The following will describe embodiments according to the present inventions with reference to drawings. In the following executed examples, a case where a semiconductor device (IC chip) cut from a wafer as a circuit element is available in a surface mount configuration will be described. Accordingly, a printed circuit board is used as the circuit board.

(14) Executed Example 1

(15) First, a method of soldering a surface-mount component will be described with reference to FIGS. 1A through 1E but the outline explanation thereof will be described because this soldering step itself is well known one.

(16) As shown in FIG. 1A, in the inventions, Ni plating layer 14 is formed on an electrode surface 12 constituting a die bonding surface in a semiconductor device (IC chip) 10. The Ni plating layer 14 is formed on the whole area of a die bonding surface (the whole electrode surface). Sn plating layer or Au plating layer 16 is further formed on a top of the Ni plating layer 14. The Au plating layer 16 is formed, if necessary.

(17) The Sn plating layer or Au plating layer 16 may be formed on a side thereof to be soldered by the die-bonding solder material 30 (a top surface thereof) in this state, and any layer such as Cu layer or Ti layer other than Ni plating layer may lie between the IC chip 10 and the Ni plating layer 14.

(18) As shown in FIG. 1A, a die pad electrode portion (die bonding bonded portion) 22 constituting an island portion of a lead frame 20 is a circuit element fixing portion. To a lower surface thereof, a heat sink plate 38 is attached and an upper surface 22a thereof is a die pad 1a electrode surface. Accordingly, the die pad electrode surface 22a functions as an electrode surface for fixing the circuit element.

(19) Ni plating layer 24 is formed on the die pad electrode surface 22a opposing the electrode surface 12 of the IC chip 10. Au plating layer 26 is further formed on a top layer of the Ni plating layer 24. The Au plating layer 26 is formed, if necessary.

(20) The die-bonding solder material 30 is then supplied onto the top layer of the die pad electrode surface 22a. In this example, since the Au plating layer 26 is formed on the top layer thereof, the die-bonding solder material 30 is applied to an upper layer of the Au plating layer 26 (solder paste processing). As the die-bonding solder material 30, the solder material having high melting point, which will be described later, is used.

(21) Here, since the lead frame 20 has a main ingredient of Cu, in this invention, Ni plating layer 24 covers the die pad electrode surface 22a of the lead frame 20.

(22) Covering of the Ni plating layer 24 makes it difficult to elute Cu even if the lead frame 20 is heated during a soldering step of IC chip 10 to elute Cu and prevents Cu, if Cu is eluted, from being mixed into the die-bonding solder material 30.

(23) When the eluted Cu is mixed into the die-bonding solder material 30, the solidus temperature (in this example, 245 degrees C., which will be described later) of this die-bonding solder material 30 itself falls down. An experiment verified that they fell down to about 229 through 236 degrees C. Using the Ni plating plate 24 enables the solidus temperature of the die-bonding solder material 30 itself to be kept on 245 degrees C.

(24) As shown in FIG. 1B, the electrode surface 12 of the IC chip 10 is mounted and provisionally fixed on a surface of the attached die-bonding solder material 30 which has a high melting point so as to be faced to each other. They then are conveyed into an oven reflow furnace (not shown) and are subjected to any heating process. By this heating process, Au plating layers 16 and 26 are melted as shown in FIG. 1C.

(25) When soldering it on the die pad electrode surface 22a using the die-bonding solder material 30, the circuit element shown in FIG. 1C is completed. In fact, inner terminal portions (internal electrode portions) 34a of leads 34 and the IC chip 10, which constitute this circuit element, are bonded (using wire bonding) by electrode wires 40, and then the IC chip 10 and the lead frame 20, which have been bonded using the wire bonding, are molded by resin 42 to obtain a well-known surface-mount component 50 shown in FIG. 1D.

(26) As the surface-mount component 50, small outline package (SOP), quad flat non-lead (QFN), quad flat package (QFP) and the like are conceivable.

(27) The surface-mount component 50 is mounted on the printed circuit board 60 functioning as the circuit board, as shown in FIG. 1E. Accordingly, a board terminal portion (land) 62 formed on the printed circuit board 60 and outer terminal portions 34b of the leads 34 are soldered using Pb-free mounting solder material 70 to complete the mounting process.

(28) It is to be noted that plating with Sn, SnBi, SnCu, SnAg, and the like is previously conducted throughout the leads 34 constituting the lead frame 20.

(29) The above-mentioned mounting process is carried out in the oven reflow furnace. As the mounting solder material 70, the solder material having lower solidus and liquidus temperatures than those of (SnAgCu)-based solder material which has been used in the past, is used, which will be described later.

(30) The following will describe the die-bonding solder material 30 and the mounting solder material 70, which are used in the inventions.

(31) In the inventions, as the die-bonding solder material 30, the solder material which contains any component that causes the solidus temperature thereof to fall down very little or even when containing it, contain it below a previously fixed value thereof are used and any component that causes the solidus temperature thereof to fall down is prevented from being eluted in a step of bonding the solder material thereto.

(32) The surface-mount component is soldered using the die-bonding solder material 30 and the mounting solder material 70, in which a difference between the solidus temperatures of the die-bonding solder material 30 and the mounting solder material 70 is expanded. The following will be described with reference to Table 1.

(33) TABLE-US-00001 TABLE 1 Die-Bonding Solder Material Die Bonding Bonded Portion Melting of Die-Bonding Solder Material Melting Melting Re- Reflow Reflow Solidus Liquidus Rate Under Solidus Liquidus Late flowable Temp., 250 C. Temp., 255 C. Compo- Temp. Temp. 245 C. Temp Temp. Under Smallest Melting Success or Melting Success or sition ( C.) ( C.) (%) Electrode ( C.) ( C.) 245 C. (%) Temp. Rate (%) Failure Rate (%) Failure Sn-10Sb 245 268 12 Ag 229 261 50% or 230 C. 50% or Failure 50% or Failure Plating More More More Sn-10Sb 245 268 12 Cu 236 268 50% or 230 C. 50% or Failure 50% or Failure More More More Sn-10Sb 245 268 12 Ni 245 268 12 230 C. 50% or Failure 50% or Failure Plating More More Sn-10Sb- 236 268 47 Cu 236 268 50% or 230 C. 50% or Failure 50% or Failure 0.1Cu More More More Sn-10Sb- 236 268 47 Ni 239 268 47 230 C. 50% or Failure 50% or Failure 0.1Cu Plating More More Sn-10Sb- 239 268 27.5 Ni 239 268 27.5 230 C. 50% or Failure 50% or Failure 0.05Cu Plating More More Sn-10Sb- 239 268 18 Ni 239 268 18 230 C. 50% or Failure 50% or Failure 0.02Cu Plating More More Sn-10Sb- 245 268 12 Cu 236 268 50% or 230 C. 50% or Failure 50% or Failure 0.001Cu More More More Sn-10Sb- 245 268 15 Ni 239 268 15 230 C. 50% or Failure 50% or Failure 0.01Cu Plating More More Sn-10Sb- 245 268 13.5 Ni 245 268 13.5 230 C. 50% or Failure 50% or Failure 0.005Cu Plating More More Sn-10Sb- 245 268 12 Ni 245 268 12 230 C. 50% or Failure 50% or Failure 0.001Cu Plating More More <Mounting Solder Material: M705>

(34) Table 1 shows unsuitable examples in order to compare them with those of the inventions. As the mounting solder material 70, (Sn-3Ag-0.5Cu)-based alloy solder material of M705 specification which has been used in the past are exemplified. The solidus temperature thereof is 217 degrees C. and the liquidus temperature thereof is 220 degrees C.

(35) On the other hand, as the die-bonding solder material 30, (SnSb)-based solder material which has a main ingredient of Sn as shown in Table 1 is used.

(36) In Table 1, as the (SnSb)-based solder material, two species of the solder materials, which contain Cu and no Cu, are shown. The (SnSb)-based solder material contains any impurities of 0.1% by mass or less. The solidus temperature of the (SnSb)-based solder material itself is 245 degrees C. and the liquidus temperature thereof is 268 degrees C.

(37) Table 1 shows composition ratios of the die-bonding solder material 30, the solidus and liquidus temperatures and melting rate of the die-bonding solder material 30 itself under 245 degrees C., on these composition ratios. Further, the solidus and liquidus temperatures and melting rate thereof under 245 degrees C., on the die pad electrode portion 22 which is a bonded portion, show experimented values with a case where the die pad electrode portion 22 is not plated and a case where the die pad electrode portion 22 is plated being separated from each other.

(38) When changing the heating temperature of the reflow furnace, how the melting state in the die pad electrode portion 22 does change is indicated by success or failure (suitability or unsuitability). Here, on the success or failure of melting of the die-bonding solder material 30 in the die pad electrode portion 22, it was decided as the failure when even 1% by mass thereof is melted.

(39) The minimum heating temperature of the reflow furnace (reflowable minimal temperature) was set so as to become a higher temperature by about 10 degrees C. than the liquidus temperature of the mounting solder material 70 and success or failure was verified by the experiments at the heating temperatures higher than the reflowable minimal temperature by 20 and 25 degrees C.

(40) As Table 1, in cases of (Sn-10Sb)-based solder material, the melting rates of the die-bonding solder material 30 itself under 245 degrees C. was 12%. In cases where Sb of 10% by mass or less was contained, as shown in Table 1, the solidus temperatures of the die pad electrode portions 22 fell down to 245 degrees C. or less. These values were changed by the plating layers on the die pad electrode portions 22 but they were lower than the solidus temperature of the die-bonding solder material 30 itself.

(41) In conclusion, in a case of (Sn-10Sb)-based solder material, even when adjusting the quantity of a constituent of Cu contained in the die-bonding solder material 30, it was verified that a melting occurred in the die pad electrode portions 22. Therefore, the solder materials shown in Table 1 are not approved so as to be suitable combinations.

(42) TABLE-US-00002 TABLE 2 Melting of Die-Bonding Die-Bonding Solder Material Die Bonding Bonded Portion Solder Material Melting Melting Reflow Reflow Rate Late Re- Temp., 240 C. Temp., 245 C. Solidus Liquidus Under Solidus Liquidus Under flowable Melting Success Melting Success Com- Temp. Temp. 245 C. Elec- Temp. Temp. 245 C. Smallest Rate or Rate or position ( C.) ( C.) (%) trode ( C.) ( C.) (%) Temp. (%) Failure (%) Failure Sn-10Sb 245 268 12 Ag 229 261 50% or 220 C. 50% Failure 50% or Failure Plating More or More More Sn-10Sb 245 268 12 Cu 236 268 50% or 220 C. 30% Failure 50% or Failure More More Sn-10Sb 245 268 12 Ni 239 268 12 220 C. 0 Success 12 Failure Plating Sn-10Sb- 236 268 47 Cu 245 268 50% or 220 C. 30% Failure 50% or Failure 0.1Cu More More Sn-10Sb- 236 268 47 Ni 239 268 47 220 C. 7.5 Failure 47 Failure 0.1Cu Plating Sn-10Sb- 239 268 27.5 Ni 239 268 27.5 220 C. 4% Failure 27.5 Failure 0.05Cu Plating Sn-10S6- 239 268 18 Ni 239 268 18 220 C. 1 Failure 18 Failure 0.02Cu Plating Sn-10Sb- 245 268 12 Cu 236 268 50% or 220 C. 30% Failure 50% or Failure 0.001Cu More More Sn-10Sb- 245 268 15 Ni 245 268 15 220 C. 0 Success 15 Failure 0.01Cu Plating Sn-10Sb- 245 268 13.5 Ni 245 268 13.5 220 C. 0 Success 13.5 Failure 0.005Cu Plating Sn-10Sb- 245 268 12 Ni 245 268 12 220 C. 0 Success 12 Failure 0.001Cu Plating <Mounting Solder Material: SnAgCuBi>

(43) Table 2 shows the experiments for presenting an explanation of the inventions.

(44) In Table 2, there shows a case where as the die-bonding solder material 30, (Sn-10Sb)-based solder material was used and as the mounting solder material 70, (SnAgCuBi)-based soldering material was used.

(45) When Sb of 10% by mass or less was contained in the die-bonding solder material 30, it did not satisfy 245 degrees C. as the solidus temperature thereof, and its solidus temperature was 245 degrees C. or less. On the other hand, when Sb of 13% by mass or more was contained, the solder material is made hard so that it was subject to any cracks, thereby causing the mechanical reliability of the solder material after the solidification thereof to deteriorate. Therefore, Sb of 10 through 13% by mass is preferably contained and in order to prevent any cracks from occurring and maintain the mechanical reliability, Sb of 10 through 11% by mass is preferably contained.

(46) Further, a purity of Sn which is a main ingredient of the solder material is preferably 99.9% by mass or more, particularly, the quantity of a constituent of Cu contained in the impurities of 0.1% by mass is preferably 0.01% by mass or less, further preferably, 0.005% by mass or less. This is because when the percentage of a constituent of Cu is increased, the natural solidus temperature (245 degrees C.) fall down to that extent.

(47) As the (SnAgCuBi)-based solder material used as the mounting solder material, the solder material containing Ag of 3 through 3.4% by mass, Cu of 0.5 through 1.1% by mass, Bi of 3 through 7% by mass and the remainder of Sn is shown. When an addition of Ag is increased, there is a suspicion that the solidus temperature rises. Therefore, it is preferably about 3.0% by mass.

(48) Since Cu also causes the solidus temperature to fall, its addition within a range of 0.55 through 0.85% by mass is preferable. Since Bi also causes the solidus temperature to fall, which is similar to Cu, and causes the mechanical strength to deteriorate, it is preferably added within a range of 3 through 5% by mass. In this example, (Sn-3Ag-0.8Cu-3Bi)-based solder material was used.

(49) When using the (SnAgCuBi)-based mounting solder material 70, to which Bi is added, the solidus temperature thereof is 205 degrees C. and the liquidus temperature thereof is 215 degrees C. so that these solidus and liquidus temperatures can be made lower than those of the solder material of M705 specification.

(50) On the other hand, as shown in Table 2, these solidus and liquidus temperatures of the die-bonding solder material 30 itself were respectively unchanged by adding Cu and when the plating material of the die pad electrode portion 22 was Ni, the melting rates of the die pad electrode portion 22 under 245 degrees C. were about 12 through 15%. When, however, the temperature of the reflow furnace was within a range of 220 through 240 degrees C., the melting rates of the die pad electrode portion 22 under 245 degrees C. were made 0%.

(51) Here, setting of the smallest reflow furnace temperature so as to be 220 degrees C. is because the liquidus temperature when using the mounting solder material 70 which has the above-mentioned composition ratios is 215 degrees C. which is low. It is to be noted that when the temperature of the reflow furnace smallest temperature rises up to 245 degrees C., the melting rate in the die pad electrode portions 22 under 245 degrees C. becomes 12 through 15%.

(52) As a result thereof, when using the lead frame 20 with Ni plating layer on the die pad electrode surface 22a, using the (SnAgCuBi)-based solder material as the mounting solder material 70, and using (Sn-10Sb)-based solder material as the mounting solder material 30 in which the quantity of a constituent of Cu contained in the impurities of 0.1% by mass or less is limited so as to be 0.01% by mass or less, satisfactory results are given when the heating temperature of the reflow furnace is up to 240 degrees C.

(53) Here, the die-bonding solder material 30 in the die pad electrode portions 22 was determined so as to be failure even if 1% thereof was melted, which was similar to the case of Table 1.

(54) For caution's sake, the (Sn-10Sb)-based solder materials, which have been used in the past, are still shown in Table 2. Further, combinations in which Cu of 0.02% by mass or more is contained are also shown therein as comparison examples.

(55) TABLE-US-00003 TABLE 3 Die Bonding Bonded Portion Melting of Die-Bonding Die-Bonding Solder Material Melting Solder Material Melting Rate Re- Reflow Reflow Solidus Liquidus Rate Solidus Liquidus Under flowable Temp., 235 C. Temp., 240 C. Com- Temp. Temp. Under 245 C. Elec- Temp. Temp 245 C. Smallest Melting Rate Success or Melting Rate Success or position ( C.) ( C.) (%) trode ( C.) ( C.) (%) Temp. (%) Failure (%) Failure Sn-10Sb 245 268 12 Ag 229 261 50% or 215 C. 50% or Failure 50% or Failure Plating More More More Sn-10Sb 245 268 12 Cu 236 268 50% or 215 C. 0 Success 30% Failure More Sn-10Sb 245 268 12 Ni 245 268 12 215 C. 0 Success 0 Success Plating Sn-10S6- 236 268 47 Cu 236 268 50% or 215 C. 0 Success 30% Failure 0.1Cu More Sn-10Sb- 236 268 47 Ni 239 268 47 215 C. 0 Success 7.5 Failure 0.1Cu Plating Sn-10Sb- 239 268 27.5 Ni 239 268 27.5 215 C. 0 Success 4% Failure 0.05Cu Plating Sn-10Sb- 239 268 18 Ni 239 268 18 215 C. 0 Success 1 Failure 0.02Cu Plating Sn-10Sb- 245 268 12 Cu 236 268 50% or 215 C. 0 Success 30% Failure 0.001Cu More Sn-10Sb- 245 268 15 Ni 239 268 15 215 C. 0 Success 0 Success 0.01Cu Plating Sn-10Sb- 245 268 13.5 Ni 245 268 13.5 215 C. 0 Success 0 Success 0.005Cu Plating Sn-10Sb- 245 268 12 Ni 245 268 12 215 C. 0 Success 0 Success 0.001Cu Plating <Mounting Solder Material: SnAgCuBiIn>

(56) Table 3 shows a preferable embodiment of this invention.

(57) The embodiment of Table 3 is a case where (SnAgCuBiIn)-based solder material was used in which In is added to the components shown in Table 2 as the mounting solder material 70.

(58) When Bi is within a range of 2 through 5% by mass, In of 3 through 5% by mass is added. The suitable addition is such that when Bi is 3% by mass, In is 3 through 4% by mass; When Bi is 4% by mass, In is preferably 3% by mass. In acts so that the liquidus temperature falls down. In this embodiment, (Sn-3Ag-0.8Cu-2Bi-5In)-based solder material was used.

(59) When using (Sn-3Ag-0.5Cu-3Bi-3In)-based solder material, into which In is further added, as the mounting solder material 70, the solidus temperature thereof was 189 degrees C. and the liquidus temperature thereof was 210 degrees C., which allowed them to further fall down than those of a case of addition of Bi. Of course, both of the solidus temperature thereof and the liquidus temperature thereof can fall down below those of the solder material of M705 specification.

(60) The die-bonding solder material 30 is (Sn-10Sb)-based solder material, in which the quantity of a constituent of Cu contained in the impurities of 0.1% by mass or less is 0.01% by mass or less, which is similar to those of Table 2. For caution's sake, data of the die-bonding solder material 30 which contains Cu of 0.02% by mass or more are shown therein, which is similar to Table 2.

(61) Containing Cu did not cause the solidus temperature and the liquidus temperature of the die-bonding solder material 30 to be changed, which were respectively 245 degrees C. and 268 degrees C., and this was similar to those of Table 2.

(62) As the plating material of the die pad electrode portion 22 composed of Cu material, Ni material is most preferable. The solidus temperatures in the die pad electrode portion 22, the quantity of a constituent of Cu of which is 0.01% by mass or less, were the solidus temperature of 239 through 245 degrees C., which were the same as the solidus temperature (245 degrees C.) of the die-bonding solder material 30 itself or were very close to it. The liquidus temperatures in the die pad electrode portion 22 were remained unchanged, 268 degrees C.

(63) The melting rates of the die-bonding solder material 30 under 245 degrees C. were within a range of about 12 through about 27.5% when the quantity of a constituent of Cu was 0.01% by mass or less. By the way, when using the conventional die-bonding solder material 30 which includes a case where Cu of 0.02% by mass or more is contained, the melting rate is 50% or more.

(64) On the other hand, since when (SnAgCuBiIn)-based solder material is used as the mounting solder material 70, the liquidus temperature falls down to 210 degrees C. as described above, the minimum temperature of the reflow furnace (the smallest heating temperature) falls down so that the reflowable minimal temperature can be set to be almost 215 degrees C. Accordingly, even if temperature in the reflow furnace rises up to 230 through 235 degrees C., the experiments verified that a die-bonding solder material 30 was not melted in the die pad electrode portion 22 as shown in Table 3.

(65) Next, executed examples (experiments) when changing composition ratios of the mounting solder material 70 are shown in Tables 4 and 5. This was a case where as the die-bonding solder material 30, (Sn-10Sb)-based solder material was used.

(66) TABLE-US-00004 TABLE 4 Melting Point ( C.) Bonding Strength (N) Maximum After Heat Cycle Test Surface Composition Endothermal After 1000 Cycles Condition (% by Mass) Solidus Reaction Liquidus Average Minimum of Solder Sn Bi Ag Cu Temp. Point Temp. Temp. Value Value Materials Executed Example1 Remainder 3 3.3 0.9 205 215 215 62 44 FIG. 6 Executed Example2 Remainder 4 3.3 0.8 202 213 213 90 58 FIG. 6 Executed Example3 Remainder 5 3.3 0.8 188 212 212 95 75 FIG. 6 Executed Example4 Remainder 6 3.3 0.9 184 211 211 95 58 FIG. 6 Executed Example5 Remainder 4 3 1.0 199 213 230 88 42 FIG. 6 Executed Example6 Remainder 5 3 1.0 188 211 230 85 49 FIG. 6 Executed Example7 Remainder 3 3 1.0 0.03Ni 199 214 214 77 45 FIG. 6 Executed Example8 Remainder 5 3 0.5 0.01Co 199 212 212 95 60 FIG. 6 Executed Example9 Remainder 3 3 0.8 0.005Fe 188 214 212 72 40 FIG. 6 Executed Example10 Remainder 5 3 190 214 214 68 33 FIG. 6 Executed Example11 Remainder 4 3 196 215 215 41 25 FIG. 6 Executed Example12 Remainder 5 3 0.1Ni 190 214 214 63 38 FIG. 6 Executed Example13 Remainder 4 3 0.1Co 196 215 215 47 31 FIG. 6 Executed Example14 Remainder 5 3 0.1Ni, 0.05Co 190 214 214 68 41 FIG. 6 Executed Example15 Remainder 5 3 0.3Ni 190 214 250 60 18 FIG. 6 Executed Example16 Remainder 5 3 0.2Co 190 214 320 41 15 FIG. 6 Comparison Example1 Remainder 0 3 0.5 217 220 220 30 18 FIG. 3 Comparison Example2 Remainder 0 3 0.5 217 220 220 25 5 FIG. 4 Comparison Example3 Remainder 1 3.3 0.9 204 216 216 30 10 FIG. 4 Comparison Example4 Remainder 2 3.3 0.9 202 215 215 38 13 FIG. 4 Comparison Example5 Remainder 1.5 4 1.0 204 216 231 31 10 FIG. 4 Comparison Example6 Remainder 8 3 0.8 174 209 230 85 19 FIG. 4

(67) Table 4 shows executed examples when using (SnAgCuBi)-based solder material. The executed examples 1 through 6 are executed examples in which (SnAgCuBi)-based solder material is used and the executed examples 7 through 9 are executed examples in which a specified metal (one species of Ni, Fe and Co) is added thereto. The executed examples 10 and 11 are executed examples in which the solder material containing no Cu is used and the executed examples 12 through 16 are executed examples in which specified metal (anyone or both of Ni and Co) is/are added thereto.

(68) The comparison example 1 was data when using the solder material of M705 specification. They were used as reference data.

(69) Table 4 shows composition ratios of the solder material. Table 4 also shows a melting point at the maximum endothermal reaction point in addition to the solidus temperature and the liquidus temperature as the melting points. It further shows mechanical bonding strength and good or bad of a surface condition of the solder material. As the heating temperature of the reflow furnace, 220 degrees C. is exemplified in the executed examples 1 through 9; 230 degrees C. is exemplified in the comparison example 1; and 220 degrees C. is exemplified in the comparison examples 2 through 6.

(70) On the surface condition of the solder material, particles of the solder material (grained solder material) shown in FIG. 2 were used. FIG. 2 is a photograph of a preheated condition thereof in which a chip device (sample number, 000) is exemplified. By enlarging a part thereof as shown in FIG. 3, it is found out that the particles of the solder material are mixed allover the entire surface of the electrode. A predetermined amount of the particles of the solder material is heated at a temperature of the reflow furnace with them being heaped up.

(71) In this case, a condition in which the particles have not yet fully melted at the temperature of the reflow furnace is shown in FIG. 4 (sample number, 103) and an enlarged photograph of a part thereof is FIG. 5. It is found out that a part of the particles of the solder material has not yet fully melted.

(72) A condition in which the particles of the solder material have been fully melted is shown in FIG. 6 and an enlarged photograph thereof is FIG. 7. The melted condition is unsuitable such that the particles of the solder material remain on a surface thereof as shown in FIG. 4. The conditions shown in FIGS. 6 and 7 are ideal melted conditions to be searched.

(73) The bonding strength is measured on the basis of a heat cycle test. In this example, a chip resistance device is exemplified. Solder paste of (SnAgCuBi)-based solder material is printed and attached with a thickness of 150 pm onto a soldering pattern (1.6 mm1.2 mm) of the printed circuit board. The chip resistance device of (3.2 mm1.6 mm0.6 mm) is then mounted thereon and is soldered in the reflow furnace at the heating temperature of 220 degrees C. The printed circuit board mounting the chip resistance device is then held under conditions of 55 degrees C. and +125 degrees C. for 30 minutes, respectively, as one cycle and when 1000 cycles are carried out, the bonding strength (N) is measured.

(74) The bonding strength in which its mean value is high and the smallest value is shown at 20 degrees C. or higher is suitable, and an absolute value thereof among them is small is further suitable.

(75) As being clear from the executed examples 1 through 9, the solidus temperatures thereof were 210 degrees C. or less. Their liquidus temperatures were almost 215 degrees C. or less. Since the surface conditions of any of the solder materials were good (perfect melted condition shown in FIG. 6), the bonding strength thereof also showed satisfactory values. Partially, there were the executed examples, the liquidus temperatures of which exceed 220 degrees C., but the surface conditions of the solder material and the bonding strength thereof showed fully satisfactory values.

(76) Although the comparison examples 2 through 6 might show contents that exceeded those of the comparison example 1, they were inferior to the executed examples 1 through 9 in the surface conditions of the solder material (their partially unmelted condition) and the bonding strength. Therefore, as (SnAgCuBi)-based solder material, it is said that the composition ratios included within the range as described above are suitable.

(77) TABLE-US-00005 TABLE 5 Bonding Strength (N) Surface Composition Melting Point ( C.) After Heat Cycle Test Condition (by Mass %) Solidus Maximum Endothermal Liquidus After 1000 Cycles of Solder Sn In Bi Ag Cu Temp. Reaction Point Temp. Temp. Average Value Minimum Value Materials Executed Example17 Remainder 3 3 3 0.5 189 210 210 54 24 FIG. 6 Executed Example18 Remainder 3 4 3 0.8 184 208 213 60 30 FIG. 6 Executed Example19 Remainder 3 5 3 0.6 184 206 206 50 22 FIG. 6 Executed Example20 Remainder 4 2 3 0.8 191 210 215 66 33 FIG. 6 Executed Example21 Remainder 4 2 3 1 191 210 217 61 29 FIG. 6 Executed Example22 Remainder 4 3 3 0.8 188 209 215 77 31 FIG. 6 Executed Example23 Remainder 4 4 3 0.5 179 207 207 81 28 FIG. 6 Executed Example24 Remainder 5 2 3 0.8 196 208 214 53 36 FIG. 6 Executed Example25 Remainder 3 4 3 184 210 210 51 22 FIG. 6 Executed Example26 Remainder 4 4 3 175 200 208 68 21 FIG. 6 Executed Example27 Remainder 5 2 3 192 206 206 48 30 FIG. 6 Comparison Example1 Remainder 0 3 0.5 217 220 220 30 18 FIG. 6 Comparison Example7 Remainder 3 0.5 3 0.5 202 213 213 25 11 FIG. 4 Comparison Example8 Remainder 3 7 3 0.4 165 204 204 45 13 FIG. 6 Comparison Example9 Remainder 4 0.5 3 0.5 202 212 212 39 13 FIG. 4 Comparison Example10 Remainder 4 5 3 0.8 173 205 213 62 17 FIG. 6 Comparison Example11 Remainder 4 7 0.5 0.8 158 203 203 45 8 FIG. 4 Comparison Example12 Remainder 5 1 3 1 199 209 216 67 19 FIG. 4 Comparison Example13 Remainder 5 4 3 0.5 178 205 205 32 13 FIG. 6 Comparison Example14 Remainder 0 0 3 0.5 217 220 220 (Not Bonded) FIG. 4

(78) Table 5 shows experimented examples (executed examples) when using (SnAgCuBiIn)-based solder material. The comparison example 1 shows data when using the solder material of M705 specification and they are used as reference data.

(79) Table 5 showed composition ratios of the solder material, a melting point at the maximum endothermal reaction point in addition to the solidus temperature and the liquidus temperature as the melting points, mechanical bonding strength and good or bad of a surface condition of the solder material, which were similar to Table 4. The surface conditions of the solder material were similar to any of FIGS. 3 through 6. The experiments of mechanical bonding strength were also similar to those of Table 4. However, the heating temperature of the reflow furnace was changed to 215 degrees C. to be experimented.

(80) The solder material to be reference was alloy solder material of M705 specification, which was similar to a case of Table 4, and various kinds of properties of this solder material were used as the reference data.

(81) As being clear from the executed examples 17 through 24, their solidus temperatures were below 200 degrees C. Their liquidus temperatures ware almost 215 degrees C. Since the surface conditions of the solder material were all good (their perfect melted conditions shown in FIGS. 6 and 7), the bonding strength thereof showed suitable values. Although there was an executed example partially in which the liquidus temperature exceeded 215 degrees C., the surface condition of the solder material thereof was good and the mechanical bonding strength thereof showed suitable value.

(82) It is determined that although there are examples having the contents which exceed those of the comparison example 1, they are inferior to the executed examples 17 through 24 in the surface condition of the solder material (a condition in which a part thereof is not melted) and the bonding strength. Therefore, it is said that the composition ratios included in the above-mentioned region are available for the (SnAgCuBiIn)-based solder material.

(83) Accordingly, as being clear from the examined results of Tables 1 through 5, in this inventions, (1) the (SnAgCuBi)-based solder material, which is shown as composition ratios in Tables 2 or blow, or the (SnAgCuBiIn)-based solder material, which is shown as composition ratios in Tables 3 or blow, is suitable for the mounting solder material 70.

(84) (2) The (SnSb)-based solder material in which the quantity of a constituent of Cu contained in impurities not more than 0.1% by mass is limited so as to be not more than 0.01% by mass is suitable for the die-bonding solder material 30. Particularly, the quantity of Cu constituent is 0.005% by mass or less, preferably, 0.001% by mass or less.

(85) It has found in this case that Ni materials are preferable as plating materials to be used in the die pad electrode portions 22 and the heating temperature of the reflow furnace is preferably set so as to be 245 degrees C. or less, preferably, 240 degrees C. or less.

(86) (3) It is to be noted that when the above-mentioned (SnSb)-based solder material is used as the die-bonding solder material 30, P may be added thereinto. When further adding P, in minuscule quantities, into the above-mentioned (SnSb)-based solder material, this leads to any improvement in wettability and voidness.

(87) (4) Further, at least one element of Ni, Fe and Co may be added into the (SnSb)-based solder material of the above-mentioned (3). In place of P, at least one element of Ni, Fe and Co may be added thereinto.

(88) Adding at least one element of Ni, Fe and Co is because it prevents Ni plating layer 14 or 24 from being melted during a step of bonding by the solder material and prevents reaction amount of Ni plating generated during the bonding by the solder material from being brought up.

(89) At least one element of Ni, Fe and Co within a range of a total amount of 0.01 through 0.1% by mass is added thereinto. When they are separately added by themselves (one kind of species is added), it is preferable that Ni is 0.1% by mass, Fe is 0.05% by mass or Co is 0.05% by mass. As a combination of these components, a combination of Ni and Co or Ni, Fe and Co is conceivable.

(90) Thereafter, this applicant has diligently studied, so that it found that in order to attain the problem such that the die-bonding solder material could be prevented from being melted by soldering the surface-mount component using the die-bonding solder material and the mounting solder material, which had a difference between the solidus temperatures thereof, the problem could be attained even if there was no Cu constituent. The results therefor were shown in the executed examples 10 through 16 in Table 4 and the executed examples 25 through 27 in Table 5.

(91) Although the executed examples 15 and 16 in Table 4 have apparently been seen to be no problem, there were many voids in them so that they were consequently determined so as to be failed. As a result thereof, the results similar to the executed examples 1 through 9 were obtained by (Sn-(45)Bi-3Ag)-based soldering material or by adding any of or both of Ni of 0.02 through 0.1% by mass and/or Co of 0.01 through 0.1% by mass into (Sn-(45)Bi-3Ag)-based solder material.

(92) Further, as shown in the executed examples 25 through 27 in Table 5, even in a case of (Sn-(35)In-(24)Bi-3Ag)-based solder material, the results similar to the executed examples 10 through 16 were obtained. An amount of the added Ag may be within a range from 2.8 to 3.3% by mass.

INDUSTRIAL APPLICABILITY

(93) These inventions are applicable to a series of steps of manufacturing a surface-mount component in which a semiconductor device (IC chip) is subjected to a die bonding, the semiconductor device subjected to the die bonding is packaged and then, it is surface-mounted on a printed circuit board or the like, and the surface-mount component manufactured by these steps of manufacturing it.

DESCRIPTION OF CODES

(94) 10 . . . Semiconductor Device (IC chip); 14, 24 . . . Ni plating Layer; 16, 26 . . . Au plating Layer; 20 . . . Lead Frame; 22 . . . Die Pad Electrode Portion (Island Portion); 34 . . . Lead Portion; 34a . . . Inner Terminal Portion; 34b . . . Outer Terminal Portion; 30 . . . Die-Bonding Solder Material; 38 . . . Heat Sink Plate; 40 . . . Electrode Wire; 50 . . . Surface Mount Component; 60 . . . Printed Circuit Board; 62 . . . Board Terminal Portion (Land); and 70 . . . Mounting Solder Material.