DEVICE FOR MANUFACTURING A MULTILAYER STACKED STRUCTURE AND METHOD FOR MANUFACTURING A THIN FILM CAPACITOR

Abstract

The present disclosure provides a device for manufacturing a multilayer stacked structure and a method for manufacturing a thin film capacitor. The method includes providing a carrier substrate; forming a plurality of first material layers and a plurality of second material layers that are alternately stacked on top of one another to form a multilayer stacked structure; and then forming two terminal electrode structures for respectively enclosing two opposite side portions of the multilayer stacked structure. Each first material layer is formed by a first material layer forming device, and each second material layer is formed by a second material layer forming device, and one of the first material layer forming device and the second material layer forming device is a co-evaporation device. The co-evaporation device provides an insulative material and a conductive material by co-evaporating for forming one of the first and the second material layers.

Claims

1. A method for manufacturing a thin film capacitor, comprising: providing a carrier substrate; forming a plurality of first material layers and a plurality of second material layers that are alternately stacked on top of one another and disposed on the carrier substrate to form a multilayer stacked structure; and forming two terminal electrode structures for respectively enclosing two opposite side portions of the multilayer stacked structure; wherein each first material layer is formed by a first material layer forming device, and each second material layer is formed by a second material layer forming device, and one of the first material layer forming device and the second material layer forming device is a co-evaporation device; wherein the co-evaporation device provides an insulative material and a conductive material by co-evaporating for forming one of the first material layer and the second material layer.

2. The method of claim 1, wherein the first material layer is a metal material layer, and the second material layer is an insulative material layer having a plurality of conductive particles randomly mixed therein, wherein the first material layer forming device is a metal material layer forming device for forming the metal material layer, the second material layer forming device is the co-evaporation device, the insulative material layer is formed by the insulative material that is provided by the co-evaporation device, and the conductive particles are formed by the conductive material that is provided by the co-evaporation device.

3. The method of claim 2, wherein the metal material layer forming device includes a metal material forming module for providing a metal material and a first baking module adjacent to the metal material forming module, and the metal material is baked by the first baking module to form the metal material layer, wherein the co-evaporation device includes an insulative material evaporating module for providing the insulative material, a conductive material evaporating module for providing the conductive material, and a second baking module adjacent to the insulative material evaporating module and the conductive material evaporating module, the insulative material being baked by the second baking module to form the insulative material layer, and the conductive material being baked by the second baking module to form the conductive particles, wherein the size of the conductive particle and the percentage of the conductive particle in the insulative material layer are determined by the evaporation quantity of the insulative material and the conductive material when co-evaporating the insulative material and the conductive material.

4. The method of claim 2, wherein the metal material layer forming device includes a metal material forming module for forming the metal material layer, and the co-evaporation device includes an insulative material evaporating module for forming the insulative material layer, and a conductive material evaporating module for forming the conductive particles, wherein the size of the conductive particle and the percentage of the conductive particle in the insulative material layer are determined by the evaporation quantity of the insulative material and the conductive material when co-evaporating the insulative material and the conductive material.

5. The method of claim 1, wherein the first material layer is an insulative material layer having a plurality of conductive particles randomly mixed therein, and the second material layer is a metal material layer, wherein the first material layer forming device is the co-evaporation device, the insulative material layer is formed by the insulative material that is provided by the co-evaporation device, and the conductive particles are formed by the conductive material that is provided by the co-evaporation device, and the second material layer forming device is a metal material layer forming device for forming the metal material layer.

6. The method of claim 5, wherein the metal material layer forming device includes a metal material forming module for providing a metal material and a first baking module adjacent to the metal material forming module, and the metal material is baked by the first baking module to form the metal material layer, wherein the co-evaporation device includes an insulative material evaporating module for providing the insulative material, a conductive material evaporating module for providing the conductive material, and a second baking module adjacent to the insulative material evaporating module and the conductive material evaporating module, the insulative material being baked by the second baking module to form the insulative material layer, and the conductive material being baked by the second baking module to form the conductive particles, wherein the size of the conductive particle and the percentage of the conductive particle in the insulative material layer are determined by the evaporation quantity of the insulative material and the conductive material when co-evaporating the insulative material and the conductive material.

7. The method of claim 5, wherein the metal material layer forming device includes a metal material forming module for forming the metal material layer, and the co-evaporation device includes an insulative material evaporating module for forming the insulative material layer, and a conductive material evaporating module for forming the conductive particles, wherein the size of the conductive particle and the percentage of the conductive particle in the insulative material layer are determined by the evaporation quantity of the insulative material and the conductive material when co-evaporating the insulative material and the conductive material.

8. A device for manufacturing a multilayer stacked structure, comprising: a rotatable platform for carrying a carrier substrate; a first material layer forming device adjacent to the rotatable platform for forming a plurality of first material layers; and a second material layer forming device adjacent to the rotatable platform for forming a plurality of second material layers; wherein one of the first material layer forming device and the second material layer forming device is a co-evaporation device; wherein the co-evaporation device provides an insulative material and a conductive material by co-evaporation for forming one of the first material layer and the second material layer; wherein the first material layers and the second material layers are alternately stacked on top of one another and disposed on the carrier substrate to form the multilayer stacked structure.

9. The device of claim 8, wherein the first material layer is a metal material layer, and the second material layer is an insulative material layer having a plurality of conductive particles randomly mixed therein, wherein the first material layer forming device is a metal material layer forming device for forming the metal material layer, the second material layer forming device is the co-evaporation device, the insulative material layer is formed by the insulative material that is provided by the co-evaporation device, and the conductive particles are formed by the conductive material that is provided by the co-evaporation device, wherein the metal material layer forming device includes a metal material forming module for providing a metal material and a first baking module adjacent to the metal material forming module, and the metal material is baked by the first baking module to form the metal material layer, wherein the co-evaporation device includes an insulative material evaporating module for providing the insulative material, a conductive material evaporating module for providing the conductive material, and a second baking module adjacent to the insulative material evaporating module and the conductive material evaporating module, the insulative material being baked by the second baking module to form the insulative material layer, and the conductive material being baked by the second baking module to form the conductive particles, wherein the size of the conductive particle and the percentage of the conductive particle in the insulative material layer are determined by the evaporation quantity of the insulative material and the conductive material when co-evaporating the insulative material and the conductive material.

10. The device of claim 8, wherein the first material layer is an insulative material layer having a plurality of conductive particles randomly mixed therein, and the second material layer is a metal material layer, wherein the first material layer forming device is the co-evaporation device, the insulative material layer is formed by the insulative material that is provided by the co-evaporation device, and the conductive particles are formed by the conductive material that is provided by the co-evaporation device, and the second material layer forming device is a metal material layer forming device for forming the metal material layer, wherein the metal material layer forming device includes a metal material forming module for providing a metal material and a first baking module adjacent to the metal material forming module, and the metal material is baked by the first baking module to form the metal material layer, wherein the co-evaporation device includes an insulative material evaporating module for providing the insulative material, a conductive material evaporating module for providing the conductive material, and a second baking module adjacent to the insulative material evaporating module and the conductive material evaporating module, the insulative material being baked by the second baking module to form the insulative material layer, and the conductive material being baked by the second baking module to form the conductive particles, wherein the size of the conductive particle and the percentage of the conductive particle in the insulative material layer are determined by the evaporation quantity of the insulative material and the conductive material when co-evaporating the insulative material and the conductive material.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The accompanying drawings are included to provide a further understanding of the present disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0009] FIG. 1 shows a flowchart of a method for manufacturing a thin film capacitor according to the present disclosure;

[0010] FIG. 2 shows a schematic view of a device for manufacturing a multilayer stacked structure according to a first embodiment of the present disclosure;

[0011] FIG. 3 shows a schematic view of the method of manufacturing the thin film capacitor for forming a metal material according to the first embodiment of the present disclosure;

[0012] FIG. 4 shows a schematic view of the method of manufacturing the thin film capacitor for forming a metal material layer according to the first embodiment of the present disclosure;

[0013] FIG. 5 shows a schematic view of the method of manufacturing the thin film capacitor for forming a first portion of an insulative material and a conductive material according to the first embodiment of the present disclosure;

[0014] FIG. 6 shows a schematic view of the method of manufacturing the thin film capacitor for forming a second portion of the insulative material according to the first embodiment of the present disclosure;

[0015] FIG. 7 shows a schematic view of the method of manufacturing the thin film capacitor for forming an insulative material layer having a plurality of conductive particles randomly mixed therein according to the first embodiment of the present disclosure;

[0016] FIG. 8 shows a schematic view of the thin film capacitor according to the first embodiment of the present disclosure;

[0017] FIG. 9 shows a schematic view of a thin film capacitor package structure according to the first embodiment of the present disclosure;

[0018] FIG. 10 shows a schematic view of another thin film capacitor package structure according to the first embodiment of the present disclosure;

[0019] FIG. 11 shows a schematic view of a device for manufacturing a multilayer stacked structure according to a second embodiment of the present disclosure;

[0020] FIG. 12 shows a schematic view of the method of manufacturing the thin film capacitor for forming a first portion of an insulative material and a conductive material according to the second embodiment of the present disclosure;

[0021] FIG. 13 shows a schematic view of the method of manufacturing the thin film capacitor for forming a second portion of the insulative material according to the second embodiment of the present disclosure;

[0022] FIG. 14 shows a schematic view of the method of manufacturing the thin film capacitor for forming an insulative material layer having a plurality of conductive particles randomly mixed therein according to the second embodiment of the present disclosure;

[0023] FIG. 15 shows a schematic view of the method of manufacturing the thin film capacitor for forming a metal material according to the second embodiment of the present disclosure; and

[0024] FIG. 16 shows a schematic view of the method of manufacturing the thin film capacitor for forming a metal material layer according to the second embodiment of the present disclosure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] Embodiments of a device for manufacturing a multilayer stacked structure and a method for manufacturing a thin film capacitor according to the present disclosure are described herein. Other advantages and objectives of the present disclosure can be easily understood by one skilled in the art from the disclosure. The present disclosure can be applied in different embodiments. Various modifications and variations can be made to various details in the description for different applications without departing from the scope of the present disclosure. The drawings of the present disclosure are provided only for simple illustrations, but are not drawn to scale and do not reflect the actual relative dimensions. The following embodiments are provided to describe in detail the concept of the present disclosure, and are not intended to limit the scope thereof in any way.

First Embodiment

[0026] Referring to FIG. 1 to FIG. 8, the first embodiment of the present disclosure provides a device for manufacturing a multilayer stacked structure, including a rotatable platform R, a first material layer forming device D1 and a second material layer forming device D2.

[0027] More particularly, the rotatable platform R can be used for carrying a carrier substrate 10, the first material layer forming device D1 is adjacent to the rotatable platform R for forming a plurality of first material layers L1, and the second material layer forming device D2 is adjacent to the rotatable platform R for forming a plurality of second material layers L2. In addition, the first material layers L1 are formed by the first material layer forming device D1, the second material layers L2 are formed by the second material layer forming device D2, and one of the first material layer forming device D1 and the second material layer forming device D2 can be a co-evaporation device V. Moreover, the co-evaporation device V can concurrently provide an insulative material M2 and a conductive material M3 by co-evaporation for forming one of the first material layer L1 and the second material layer L2. Therefore, the first material layers L1 and the second material layers L2 are alternately stacked on top of one another and disposed on the carrier substrate 10 to form the multilayer stacked structure 1 as shown in FIG. 8.

[0028] For example, the device for manufacturing the multilayer stacked structure 1 can be operated in a vacuum chamber or a non-vacuum chamber.

[0029] Referring to FIG. 1 to FIG. 8, the present disclosure provides a method for manufacturing a thin film capacitor, including the following steps: firstly, providing a carrier substrate 10 (S100); next, forming a plurality of first material layers L1 and a plurality of second material layers L2 that are alternately stacked on top of one another and disposed on the carrier substrate 10 to form a multilayer stacked structure 1 (S102); and then forming two terminal electrode structures 2 for respectively enclosing two opposite side portions 20P of the multilayer stacked structure 1 (S104) so as to finish the manufacture of the thin film capacitor Z as shown in FIG. 8. For example, the carrier substrate 10 may be a conductive substrate made of any type of conductive material such as Cu or Al, etc., or may be an insulative substrate made of any type of insulative material such as PMMA, PP or PET, etc.

[0030] More particularly, each first material layer L1 can be formed by a first material layer forming device D1, each second material layer L2 can be formed by a second material layer forming device D2, and one of the first material layer forming device D1 and the second material layer forming device D2 can be a co-evaporation device V. In addition, the co-evaporation device V can concurrently provide an insulative material M2 and a conductive material M3 by co-evaporation for forming one of the first material layer L1 and the second material layer L2.

[0031] For example, the first material layer L1 may be a metal material layer 11, and the second material layer L2 may be an insulative material layer 12 having a plurality of conductive particles 120 randomly mixed therein. That is to say, the conductive particles 120 can be randomly distributed and non-uniformly arranged in the insulative material layer 12. In addition, the first material layer forming device D1 may be a metal material layer forming device F for forming the metal material layer 11, and the second material layer forming device D2 may be the co-evaporation device V. Moreover, the insulative material layer 12 can be formed by the insulative material M2 that is provided by the co-evaporation device V, and the conductive particles 120 can be formed by the conductive material M3 that is provided by the co-evaporation device V. It should be noted that the dielectric coefficient of the thin film capacitor Z and the multilayer stacked structure 1 can be increased due to the conductive particles 120 that are randomly distributed in each of the insulative material layers 12.

[0032] For example, the metal material layer forming device F includes a metal material forming module F1 for providing a metal material M1 and a first baking module F2 adjacent to the metal material forming module F1, and the metal material M1 can be baked or cured by the first baking module F2 to form the metal material layer 11. More particularly, referring to FIG. 2, FIG. 3 and FIG. 4, the metal material M1 (such as Cu or Al, etc.) is formed on the carrier substrate 10 by the metal material forming module F1, and then the metal material M1 is baked by the first baking module F2 to form the metal material layer 11. It should be noted that the metal material forming module F1 can generate the metal material M1 by coating, spraying or printing, but it is not meant to limit the scope of the present disclosure.

[0033] For example, the co-evaporation device V includes an insulative material evaporating module V1 for providing the insulative material M2, a conductive material evaporating module V2 for providing the conductive material M3, and a second baking module V3 adjacent to the insulative material evaporating module V1 and the conductive material evaporating module V2. In addition, the insulative material M2 can be baked or cured by the second baking module V3 to form the insulative material layer 12, and the conductive material M3 can be baked or cured by the second baking module V3 to form the conductive particles 120. More particularly, referring to FIG. 2 and FIG. 5 to FIG. 7, firstly, a first portion of the insulative material M2 (such as PMMA, PP, PET, Mylar, polystyrene, polycarbonate or acrylate, etc.) can be formed on the metal material layer 11 by the insulative material evaporating module V1, and the conductive material M3 (such as Cu, Al or In etc.) can be formed on the first portion of the insulative material M2 by the conductive material evaporating module V2; next, a second portion of the insulative material M2 can be formed on the first portion of the insulative material M2 to cover the conductive material M3 by the insulative material evaporating module V1; and then the insulative material M2 can be baked or cured by the second baking module V3 to form the insulative material layer 12, and the conductive material M3 can be baked or cured by the second baking module V3 to form the conductive particles 120. However, it is not meant to limit the scope of the present disclosure.

[0034] It should be noted that the size of the conductive particle 120 and the percentage of the conductive particle 120 in the insulative material layer 12 can be determined by the evaporation quantity of the insulative material M2 and the conductive material M3 when the insulative material M2 and the conductive material M3 are co-evaporated as shown in FIG. 6 and FIG. 7. For example, the evaporation quantity of the insulative material M2 would be affected by the opening size of the evaporation vessel that is used for containing the insulative material M2, and the evaporation quantity of the conductive material M3 would be affected by the opening size of the evaporation vessel that is used for containing the conductive material M3. In addition, the ratio of the insulative material M2 to the conductive material M3 can be determined by the impedance value of the insulative material layer 12. For example, before the impedance value of the insulative material layer 12 is drastically decreased, the ratio of the insulative material M2 to the conductive material M3 would be at maximum.

[0035] For example, as shown in FIG. 8, each of the terminal electrode structures 2 includes a first enclosing layer 21 for enclosing the side portion 20P of the multilayer stacked structure 1, a second enclosing layer 22 for enclosing the first enclosing layer 21, and a third enclosing layer 23 for enclosing the second enclosing layer 22. In addition, the first enclosing layer 21, the second enclosing layer 22 and the third enclosing layer 23 respectively are a silver layer, a nickel layer and a tin layer, but it is not meant to limit the scope of the present disclosure.

[0036] For example, referring to FIG. 8 and FIG. 9, the thin film capacitor Z can be enclosed by a package body P (such as an insulation package body) in advance, and then two conductive pins L electrically contacting the thin film capacitor Z are extended from the thin film capacitor Z to the exterior of the package body P so as to complete a thin film capacitor package structure. In addition, for another example, referring to FIG. 8 and FIG. 10, the thin film capacitor Z can be enclosed by a package body P (such as an insulation package body) in advance and the thin film capacitor Z with the package body P is received inside a metal casing H (such as an aluminum casing), and then two conductive pins L electrically contacting the thin film capacitor Z are extended from the thin film capacitor Z to the exterior of the metal casing H so as to complete another thin film capacitor package structure. That is to say, the multilayer stacked structure 1 and the two terminal electrode structures 2 are enclosed by a package body P, and two conductive pins L respectively electrically contact the two terminal electrode structures 2 and are exposed from the package body P. However, the aforementioned description of the thin film capacitor package structure is merely an example and is not meant to limit the instant disclosure.

[0037] It should be noted that the first baking module F2 and the second baking module V3 can be omitted in the first embodiment. That is to say, the metal material layer forming device F includes a metal material forming module F1 for directly forming the metal material layer 11, and the co-evaporation device V includes an insulative material evaporating module V1 for directly forming the insulative material layer 12, and a conductive material evaporating module V2 for directly forming the conductive particles 120.

Second Embodiment

[0038] Referring to FIG. 11 to FIG. 16, the second embodiment of the present disclosure provides a device for manufacturing a multilayer stacked structure and a method for manufacturing a thin film capacitor. Comparing FIG. 11 to FIG. 16 with FIG. 2 to FIG. 7, the difference between the second embodiment and the first embodiment is as follows.

[0039] Firstly, in the second embodiment, the first material layer L1 may be an insulative material layer 12 having a plurality of conductive particles 120 randomly mixed therein, and the second material layer L2 may be a metal material layer 11. In addition, the first material layer forming device D1 may be the co-evaporation device V, and the second material layer forming device D2 may be a metal material layer forming device F for forming the metal material layer 11. Moreover, the insulative material layer 12 can be formed by the insulative material M2 that is provided by the co-evaporation device V, and the conductive particles 120 can be formed by the conductive material M3 that is provided by the co-evaporation device V.

[0040] Furthermore, in the second embodiment, the co-evaporation device V includes an insulative material evaporating module V1 for providing the insulative material M2, a conductive material evaporating module V2 for providing the conductive material M3, and a second baking module V3 adjacent to the insulative material evaporating module V1 and the conductive material evaporating module V2. In addition, the insulative material M2 can be baked or cured by the second baking module V3 to form the insulative material layer 12, and the conductive material M3 can be baked or cured by the second baking module V3 to form the conductive particles 120. More particularly, referring to FIG. 11 and FIG. 12 to FIG. 14, firstly, a first portion of the insulative material M2 (such as PMMA, PP, PET, Mylar, polystyrene, polycarbonate or acrylate, etc.) can be formed on the carrier substrate 10 by the insulative material evaporating module V1, and the conductive material M3 (such as Cu, Al or In etc.) can be formed on the first portion of the insulative material M2 by the conductive material evaporating module V2; next, a second portion of the insulative material M2 can be formed on the first portion of the insulative material M2 to cover the conductive material M3 by the insulative material evaporating module V1; and then the insulative material M2 can be baked or cured by the second baking module V3 to form the insulative material layer 12, and the conductive material M3 can be baked or cured by the second baking module V3 to form the conductive particles 120. However, it is not meant to limit the scope of the present disclosure.

[0041] Moreover, in the second embodiment, the metal material layer forming device F includes a metal material forming module F1 for providing a metal material M1 and a first baking module F2 adjacent to the metal material forming module F1, and the metal material M1 can be baked or cured by the first baking module F2 to form the metal material layer 11. More particularly, referring to FIG. 11, FIG. 15 and FIG. 16, the metal material M1 (such as Cu or Al, etc.) is formed on the insulative material layer 12 by the metal material forming module F1, and then the metal material M1 is baked by the first baking module F2 to form the metal material layer 11. It should be noted that the metal material forming module F1 can generate the metal material M1 by coating, spraying or printing, but it is not meant to limit the scope of the present disclosure.

[0042] It should be noted that the first baking module F2 and the second baking module V3 can be omitted in the second embodiment. That is to say, the metal material layer forming device F includes a metal material forming module F1 for directly forming the metal material layer 11, and the co-evaporation device V includes an insulative material evaporating module V1 for directly forming the insulative material layer 12, and a conductive material evaporating module V2 for directly forming the conductive particles 120.

[0043] In conclusion, one of the first material layer L1 and the second material layer L2 can be formed, and the first material layers L1 and the second material layers L2 can be alternately stacked on top of one another to form the multilayer stacked structure 1 by matching the features of one of the first material layer forming device D1 and the second material layer forming device D2 is a co-evaporation device V and the co-evaporation device V provides an insulative material M2 and a conductive material M3 by co-evaporation.

[0044] It should be noted that the dielectric constant or the dielectric coefficient of the thin film capacitor Z and the multilayer stacked structure 1 can be increased due to the conductive particles 120 that are randomly distributed in each of the insulative material layers 12.

[0045] The aforementioned descriptions merely represent the preferred embodiments of the present disclosure, without any intention to limit the scope of the present disclosure which is fully described only within the following claims. Various equivalent changes, alterations or modifications based on the claims of the present disclosure are all, consequently, viewed as being embraced by the scope of the present disclosure.