High voltage metal insulator metal capacitors are described. In an example, a capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode plate is on the first capacitor dielectric and is over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and is over and parallel with the second electrode plate, and a third capacitor dielectric is on the third electrode plate. A fourth electrode plate is on the third capacitor dielectric and is over and parallel with the third electrode plate. In another example, a capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. The capacitor dielectric includes a plurality of alternating first dielectric layers and second dielectric layers.

High voltage metal insulator metal capacitors are described. In an example, a capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode plate is on the first capacitor dielectric and is over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and is over and parallel with the second electrode plate, and a third capacitor dielectric is on the third electrode plate. A fourth electrode plate is on the third capacitor dielectric and is over and parallel with the third electrode plate. In another example, a capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. The capacitor dielectric includes a plurality of alternating first dielectric layers and second dielectric layers.

An electronic component is disclosed. The electronic component includes: a capacitor body; first and second external electrodes on a mounting surface of the capacitor body; first and second connection terminals respectively connected to the first and second external electrodes; a first bonding portion between the first external electrode and the first connection terminal, and including a first-2-th region and a first-1-th region, the first-2-th region being adjacent to a center of the capacitor body and including a conductive resin, and the first-1-th region being adjacent to one end of the capacitor body and including a high melting point solder; and a second bonding portion between the second external electrode and the second connection terminal, and including a second-2-th region and a second-1-th region, the second-2-th region being adjacent to the center of the capacitor body and the second-1-th region being adjacent to the other end of the capacitor body.

An electronic component is disclosed. The electronic component includes: a capacitor body; first and second external electrodes on a mounting surface of the capacitor body; first and second connection terminals respectively connected to the first and second external electrodes; a first bonding portion between the first external electrode and the first connection terminal, and including a first-2-th region and a first-1-th region, the first-2-th region being adjacent to a center of the capacitor body and including a conductive resin, and the first-1-th region being adjacent to one end of the capacitor body and including a high melting point solder; and a second bonding portion between the second external electrode and the second connection terminal, and including a second-2-th region and a second-1-th region, the second-2-th region being adjacent to the center of the capacitor body and the second-1-th region being adjacent to the other end of the capacitor body.

A dielectric film for a film capacitor includes (A) a thermoplastic resin and (B) a metal diketone complex.

A dielectric composition that contains a first complex oxide represented by (Bi.sub.xNa.sub.1−x)TiO.sub.3—CaTiO.sub.3 and having a perovskite structure as a main component; and at least one second complex oxide having a perovskite structure selected from the group consisting of BaZrO.sub.3, SrZrO.sub.3, CaZrO.sub.3, NaNbO.sub.3, and NaTaO.sub.3 as an auxiliary component. A tolerance factor t when the at least one second complex oxide is BaZrO.sub.3, NaNbO.sub.3, or NaTaO.sub.3 is 0.9016≤t≤0.9035, a tolerance factor t when the at least one second complex oxide is SrZrO.sub.3 is 0.9005≤t≤0.9025, and a tolerance factor t when the at least one second complex oxide is CaZrO.sub.3 is 0.9000 t<0.9020.

A ceramic electronic device includes a dielectric layer and an internal electrode layer that are alternately stacked, wherein the dielectric layer contains yttria-stabilized zirconia and (Ca.sub.x1Ba.sub.x2Sr.sub.1-x1-x2)(Ti.sub.yZr.sub.1-y)O.sub.3 (0.6≤x1≤0.9, 0≤x2≤0.1, 0≤y≤0.1) as a main component, and wherein, in the dielectric layer, a concentration of the yttria-stabilized zirconia when a total amount of Ti and Zr is 100 mol % is 0.5 mol % or more and 5.0 mol % or less.

A ceramic electronic device includes a dielectric layer and an internal electrode layer that are alternately stacked, wherein the dielectric layer contains yttria-stabilized zirconia and (Ca.sub.x1Ba.sub.x2Sr.sub.1-x1-x2)(Ti.sub.yZr.sub.1-y)O.sub.3 (0.6≤x1≤0.9, 0≤x2≤0.1, 0≤y≤0.1) as a main component, and wherein, in the dielectric layer, a concentration of the yttria-stabilized zirconia when a total amount of Ti and Zr is 100 mol % is 0.5 mol % or more and 5.0 mol % or less.

A multilayer ceramic capacitor includes a multilayer body including dielectric layers, inner-electrode layers, and outer electrodes coupled to the inner-electrode layers. The multilayer body includes Ba, Ti, Ca, Mg, Zr, and R, and when the Ti content is defined as 100 parts by mole, the relative amounts are as follows: Ca, 0.03 parts by mole or more and 0.15 parts by mole or less, Mg, 0.01 parts by mole or more and 0.09 parts by mole or less, R, 2.5 parts by mole or more and 8.4 parts by mole or less; Zr, 0.05 parts by mole or more and 3.00 parts by mole or less: Si, 0.5 parts by mole or more and 4.0 parts by mole or less; and P, 0.005 parts by mole or more and 0.500 parts by mole or less. Ca is in a vicinity of the center of crystal grains contained in the dielectric layers.

A multilayer ceramic capacitor includes a multilayer body including dielectric layers, inner-electrode layers, and outer electrodes coupled to the inner-electrode layers. The multilayer body includes Ba, Ti, Ca, Mg, Zr, and R, and when the Ti content is defined as 100 parts by mole, the relative amounts are as follows: Ca, 0.03 parts by mole or more and 0.15 parts by mole or less, Mg, 0.01 parts by mole or more and 0.09 parts by mole or less, R, 2.5 parts by mole or more and 8.4 parts by mole or less; Zr, 0.05 parts by mole or more and 3.00 parts by mole or less: Si, 0.5 parts by mole or more and 4.0 parts by mole or less; and P, 0.005 parts by mole or more and 0.500 parts by mole or less. Ca is in a vicinity of the center of crystal grains contained in the dielectric layers.