Sn-Cu-based lead-free solder alloy
10137536 · 2018-11-27
Assignee
Inventors
- Tsukasa Ohnishi (Tokyo, JP)
- Shunsaku Yoshikawa (Tokyo, JP)
- Seiko Ishibashi (Tokyo, JP)
- Rei FUJIMAKI (Tokyo, JP)
Cpc classification
H05K3/3463
ELECTRICITY
H01L27/00
ELECTRICITY
H01L23/42
ELECTRICITY
H01L2924/0002
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L23/552
ELECTRICITY
B23K35/262
PERFORMING OPERATIONS; TRANSPORTING
H01L2924/0002
ELECTRICITY
H01L2924/00
ELECTRICITY
B23K35/0244
PERFORMING OPERATIONS; TRANSPORTING
International classification
B23K35/26
PERFORMING OPERATIONS; TRANSPORTING
H01L23/373
ELECTRICITY
B23K35/02
PERFORMING OPERATIONS; TRANSPORTING
H01L27/00
ELECTRICITY
H01L23/42
ELECTRICITY
Abstract
Provided is a solder alloy having excellent wettability on both of a Cu surface and an Ni surface. The solder alloy has such an alloy composition that 0.6 to 0.9 mass % of Cu and 0.01 to 0.1 mass % of Al are contained, 0.02 to 0.1 mass % of Ti and/or 0.01 to 0.05 mass % of Co may be contained as required and the remainder is made up by Sn.
Claims
1. A lead-free solder alloy composition consisting of: 0.6 to 0.9 wt % of Cu, 0.01 to 0.1 wt % of Al, 0.02 to 0.1 wt % of Ti, optionally 0.01 to 0.05 wt % of Co, and a balance of Sn.
2. The lead-free solder alloy according to claim 1, wherein the 0.01 to 0.05 wt % of Co is included in the alloy composition.
3. The lead-free solder alloy according to claim 1, wherein the total amount of Al and Ti is in a range of 0.03 to 0.1 wt %.
4. The lead-free solder alloy according to claim 3, wherein the 0.01 to 0.05 wt % of Co is included in the alloy composition.
5. A lead-free solder alloy sheet with a thickness of up to 500 um having the alloy composition according to claim 1.
6. An assembly comprising a shielding case and an IC device joined together by the lead-free solder alloy according to claim 1.
7. The assembly according to claim 6 further comprising a heat sink, wherein the heat sink and the shielding case are joined together by the lead-free solder alloy.
Description
BRIEF DESCRIPTION OF DRAWINGS
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DESCRIPTION OF EMBODIMENTS
(5) The present invention is further described below with reference to the drawings.
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(7) In the field of electrical and electronics industry, reduction in weight, thickness, length and size is in progress with daily technological innovation. Particularly in the semiconductor field, higher functionality and higher density are pursued. With the trend toward higher functionality, a large current needs to be applied to a semiconductor device and the amount of heat generated in a semiconductor portion tends to increase. The heat dissipation performance for releasing the generated heat outside is a very important factor directly linked to higher semiconductor performance and its reliability.
(8) A heat sink as shown in
(9) In the illustrated example, the IC device 3 such as BGA or Si provided on a substrate 5 is connected to the heat sink 1 via the shielding case 4 and a solder alloy 2 of the invention is used to connect the IC device 3 to the shielding case 4 and also to connect the shielding case 4 to the heat sink 1. The sheet-like solder alloy according to the invention is interposed between the IC device 3 and the shielding case 4 and between the shielding case 4 and the heat sink 1 to form an assembly, which is then heated in a reflow oven or the like and soldered.
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(12) In the illustrated example, an Ni-plated layer 8 is formed on each of an IC device 7 and a shielding case 6 and is then coated with an Au-plated layer 10 by Au flash plating to form the joint surfaces. These joint surfaces are heated and joined together through a solder 9 of the invention. When heated, the Au-plated layer 10 shown in
(13) Indium(In), a resin material containing Indium, grease and a conductive tape have conventionally been used in this connection. However, Indium is a noble metal and is expensive as a junction material, and hence has difficulty with economic efficiency like an Ag-containing material. Grease and a conductive tape have problems with heat resistance and adhesion to a semiconductor device or member.
(14) According to the invention, as shown in
(15) This enables design for heat dissipation having high thermal conductivity, high heat resistance and high adhesion which have heretofore been difficult to achieve in a conventional junction system.
(16) According to the invention, the solder alloy components are defined for the following reasons:
(17) According to the invention, Cu is blended to improve the strength of the solder alloy while adjusting the melting point.
(18) In general, the solder used in a semiconductor mounting portion is an SnAgCu based alloy mainly typified by an Sn-3 wt % Ag-0.5 wt % Cu solder along with the recent trend toward lead-free production.
(19) The solder alloy according to the invention has a melting point of around 227 to 230 C. which is a melting point close to that of an SnCu alloy having a eutectic composition, and Cu is added in an amount of 0.6 to 0.9 wt % in order to adjust the melting point.
(20) A Cu content of less than 0.6 wt % is not sufficient to improve the strength, whereas a Cu content in excess of 0.9 wt % is not appropriate because of a high melting point and poor mechanical ductility. The Cu content is preferably from 0.7 to 0.9 wt %.
(21) One of the characteristic features of the invention is to blend Al but an Al content of less than 0.01 wt % is not sufficient to show the effect of improving the wettability. On the other hand, at an Al content in excess of 0.1 wt %, Al which is prone to oxidize during melting is more likely to concentrate on the solder surface and the object of the invention cannot be achieved with regard to the wettability. The Al content is preferably from 0.02 to 0.07 wt %.
(22) In particular, the wettability on Ni is significantly improved by further adding 0.02 to 0.1 wt % of Ti to the solder alloy of the invention. Particularly when the total amount of Al and Ti is in a range of 0.03 to 0.1 wt %, the effect of improving the wettability is significant.
(23) Co may be further optionally added to the SnCuAl solder alloy of the invention in an amount of 0.01 to 0.05 wt %. The addition of Co makes it possible not only to further improve the wettability of the solder alloy of the invention on the Ni surface but also to increase the strength and hardness as the junction material.
(24) In the meanwhile, the semiconductor device used is often primarily composed of silicon having a low coefficient of thermal expansion and a heat sink and a shielding case to be joined thereto are metallic materials. Thermal strain or thermal stress due to a difference in coefficient of thermal expansion between the components resulting from application of current is applied to the joint portion between a semiconductor and a heat dissipating member (a heat sink or a shielding case), which may cause cracking or peeling of the joint.
(25) It is believed that the solder alloy according to the invention can follow any deformation caused by thermal stress because the mechanical ductility can be improved in addition to the above-described operational advantage by adding a small amount of Al to the SnCu solder. In addition to this, it is believed that, by adding Al and further optionally Ti in an amount as small as 0.02 to 0.1 wt % to the SnCu alloy, a structure primarily composed of Sn can be made finer to enable the effect of suppressing progress of cracking due to internal stress and longer life of the solder alloy owing to stress relaxing properties.
(26) The solder alloy of the invention is not particularly limited in its form and may be used in appropriate forms such as solder bar, solder powder, solder ball and solder sheet.
(27) Particularly in view of the excellent solderability on an Ni surface, it turns out that the solder alloy of the invention can be advantageously used in the form of a solder alloy sheet in soldering an IC device or the like to heat dissipating members (a shielding case and a heat sink) for use in heat dissipation from the IC device.
(28) Since the solder of the invention has particularly excellent solderability on an Ni surface, a shielding case and an IC device can be easily joined together by forming the solder into a sheet and heating it in a conveyor-type reflow oven or an oven furnace for solder joint as it is held from the shielding case and the bottom surface of the IC device. The solder sheet in this process has a thickness of 500 m or less. The lower limit is not specifically defined and is usually at least 200 m because of manufacturing limitations. The solder sheet according to the invention is cut into appropriate width and length according to the surfaces to be joined together by soldering and is used for the above-described soldering.
(29) The present invention has been described on the solder alloy used to join an IC device to a shielding case or a heat sink but the solder alloy according to the invention is also applied in the same manner to soldering of an electrode in a circuit board as is already understood by a person skilled in the art. In this case, the solder alloy can be used as a pellet- or disk-shaped solder preform.
EXAMPLES
(30) Solders each having an alloy composition as shown in Table 1 were prepared and subjected to a wettability test according to the procedure described below, and the wettability and the tensile strength of each of the solders were measured.
(31) Wettability Test
(32) The wettability of the solder alloys was examined by a wetting balance method.
(33) Ni sheets and Cu sheets (thickness: 0.3 mm; width: 10 mm; length: 30 mm) were used as specimens.
(34) A thin layer of resin flux for soldering was applied to a surface of each specimen and the specimen was immersed in molten solder heated and held at 260 C. to obtain a curve of wettability against time axis. The zero cross time was determined from the wettability curve to evaluate the wettability.
(35) Test results are shown in Table 1. As for the wettability on the Ni sheets, a specimen having a zero cross time shorter by about 1 second or more than that of an Sn-0.7 wt % Cu alloy solder having a basic composition was rated good. Since the basic composition showed a zero cross time of 5.4 seconds, a specimen having a zero cross time of 2 seconds or more but less than 4 seconds was deemed to have improved wettability and rated good. A specimen having a zero cross time of less than 2 seconds was rated excellent and a specimen having a zero cross time of 4 seconds or more was rated poor.
(36) The wettability on the Cu sheets was evaluated in the same manner and all the results are shown in Table 1. Criteria for judging the wettability were defined in the same manner as in the Ni sheets: A specimen having a zero cross time of less than 1.1 seconds which indicates that the specimen is more wettable than the Sn-0.7Cu solder having the basic composition was rated excellent, a specimen having a zero cross time of 1.1 seconds or more but less than 1.6 seconds was rated good and a specimen having a zero cross time of 1.6 seconds or more was rated poor
(37) TABLE-US-00001 TABLE 1 Alloy composition Zero cross time [wt %] [sec] Cu Al Ti Co Ni sheet Cu sheet Reference Example 1 0.6 0.05 2.9 Good 1.4 Good Reference Example 2 0.6 0.1 1.8 Excellent 1.3 Good Reference Example 3 0.7 0.03 3.5 Good 1.3 Good Reference Example 4 0.7 0.01 2.6 Good 1.3 Good Reference Example 5 0.7 0.1 3.1 Good 1.5 Good Reference Example 6 0.9 0.09 2.4 Good 1.3 Good Example 1 0.7 0.03 0.03 1.7 Excellent 1.2 Good Reference Example 7 0.7 0.03 0.03 2.5 Good 1.5 Good Example 2 0.7 0.03 0.05 1.6 Excellent 1.3 Good Example 3 0.7 0.04 0.05 2.1 Good 1.4 Good Example 4 0.7 0.05 0.02 2.5 Good 1.4 Good Example 5 0.7 0.06 0.03 1.9 Excellent 1.4 Good Example 6 0.7 0.01 0.02 0.01 3.2 Good 1.2 Good Example 7 0.9 0.01 0.02 0.02 3.2 Good 1.1 Good Comparative Example 1 0.6 7.0 Poor 1.3 Good Comparative Example 2 0.7 5.4 Poor 1.1 Good Comparative Example 3 0.9 4.8 Poor 1.2 Good Comparative Example 4 0.4 0.003 8.4 Poor 1.8 Poor Comparative Example 5 0.4 0.15 7.5 Poor 1.8 Poor Comparative Example 6 0.6 0.004 4.0 Poor 1.3 Good Comparative Example 7 0.7 0.003 8.2 Poor 1.1 Good Comparative Example 8 0.7 0.15 6.2 Poor 1.9 Poor Comparative Example 9 0.8 0.12 5.9 Poor 1.5 Good Comparative Example 10 1 0.004 6.8 Poor 1.3 Good Comparative Example 11 1 0.2 4.1 Poor 1.5 Good
(38) (Evaluation of Wettability on Ni and Cu)
(39) As is seen from the results shown in Table 1, the Sn-0.6 to 0.9 wt % Cu alloys show poor wettability on Ni but the wettability on Ni is improved by adding 0.01 to 0.1 wt % of Al thereto.
(40) Likewise, good wettability is also exhibited on Cu by adding 0.01 to 0.1 wt % of Al to the SnCu solder alloy.
(41) The wettability on Ni is dramatically improved by adding 0.02 to 0.1 wt % of Ti to the SnCu solder alloy in addition to Al. The wettability on Ni is considerably improved particularly when the total amount of Al and Ti added is in a range of about 0.03 to about 0.1 wt %.
(42)