Circuit cooled on two-sides

Abstract

The invention relates to a component (9) comprising a first ceramic substrate (1) with an upper side (1b) and a lower side (1a), wherein a metallization (2) is applied on the upper side (1b), on which metallization an Si circuit (4) is mounted by its lower side via a connecting means (3). In order that the Si circuit (4) is cooled on both sides by elements with a high thermal conductivity and simultaneously a high electrical conductivity, and in order that the efficiency of the assembly is increased, according to the invention, a connecting means (5) is applied on the upper side (1b) of the Si circuit (4), on which connecting means a ceramic flat substrate (6) is attached by its lower side, and a second ceramic substrate (8) is arranged on the flat substrate (6) via a metallization (7), wherein the ceramic flat substrate (8) contains metal-filled thermal electrical vias (11) and/or cooling ducts for conveying a cooling means.

Claims

1. A component consisting of a first ceramic substrate with an upper side and a lower side, wherein a metallization is applied on the upper side, on which metallization an Si circuit is mounted by its lower side via a connecting means, wherein a connecting means is applied on the upper side of the Si circuit, on which connecting means a ceramic flat substrate is attached by its lower side, and a second ceramic substrate is arranged on the flat substrate via a metallization, wherein the ceramic flat substrate contains metal-filled thermo-electric through-connections (vias) and/or cooling ducts to convey a cooling means.

2. The circuit according to claim 1, wherein Si circuit is a silicon circuit, a chip, or a transistor.

3. The circuit according to claim 1, wherein all metallizations are made of DCB-Cu, thick film Cu, Ag or WNiAu, and/or are metallizations which are sintered with the ceramic substrate.

4. The circuit according to claim 1, wherein the connecting means are solder, sintered silver, or silver glue.

5. The circuit according to claim 1, wherein the through-connections are made of Cu or Ag and the substrates are made of aluminum nitride.

6. The circuit according to claim 1, wherein cooling elements are arranged on the lower side of the first ceramic substrate.

Description

[0015] The figures show the prior art (FIG. 1) and a component according to the invention (FIG. 2).

[0016] FIG. 1 shows a component 9 according to the prior art. The component consists of a first ceramic substrate 1 with an upper side 1b and a lower side 1a, wherein a metallization 2 is applied on the upper side 1b, wherein an Si circuit 4 is mounted on the same by its lower side via a connecting means 3. According to the invention, on the Si circuit 4 and/or on its upper side, a ceramic flat substrate 6 is attached by its lower side via a connecting means 5, and a second ceramic substrate 8 is arranged on the flat substrate 6 via a metallization 7, wherein the ceramic flat substrate 6 contains metal-filled thermo-electric through-connections (vias) 11 and/or cooling ducts used to convey a cooling means.

[0017] The ceramic substrates 1, 8 are preferably plate-shaped and preferably are made of aluminum nitride, which has a very high thermal conductivity.

[0018] The metallizations preferably consist of DCB-Cu, thick film Cu, Ag or WNiAu and/or are sintered with the ceramic substrate 1, 8.

[0019] The Si circuit 4 is a silicon circuit designed as a chip or a transistor.

[0020] The connecting means 3, 5 are preferably solder, sintered silver or silver glue.

[0021] The through-connections 11 are made of Cu or Ag, by way of example.

[0022] Cooling elements, which are not shown in FIG. 2, are preferably arranged on the lower side 1a of the first ceramic substrate 1. These cooling elements can be fins used for air cooling. However, they can also be cool boxes which convey liquid.

[0023] The ceramic flat substrate 6 is used to lead away the waste heat of the Si circuit 4 into the ceramic substrate 8, and can also be used to electrically couple the Si circuit 4 to the metallization 7. The flat substrate 6 is also preferably made of aluminum nitride. The waste heat is transported, and an electrical connection is made, by its metal-filled thermo-electric through-connections (vias) 11. The through-connections (vias) 11 preferably run at right angles to the surface of the flat substrate 6.

[0024] The reference numeral 10 is used in both figures to indicate bond wires used to create electrical connections.