POWER SEMICONDUCTOR MODULE

Abstract

The present invention discloses a power semiconductor module, comprising: a substrate; a semiconductor provided on a top side of the substrate; and a package formed on the semiconductor and the substrate, wherein the package has openings at a top side thereof, through which terminal contacts of the semiconductor and the substrate are exposed outside and accessible from outside.

Claims

1. A power semiconductor module, comprising: a substrate; a semiconductor provided on a top side of the substrate; and a package formed on the semiconductor and the substrate, wherein the package has openings at a top side thereof, through which terminal contacts of the semiconductor and the substrate are exposed outside and accessible from outside.

2. The power semiconductor module according to claim 1, wherein the terminal contacts of the semiconductor and the substrate that are exposed outside and accessible from outside are pressure-contacted with a circuit board.

3. The power semiconductor module according to claim 1, wherein the terminal contact of the semiconductor that is exposed outside and accessible from outside is provided with a bearing surface thereon.

4. The power semiconductor module according to claim 3, wherein the bearing surface is copper based bearing surface, and is connected to the semiconductor by a top side connecting layer between the bearing surface and the semiconductor, wherein the top side connecting layer is a silver sintering layer formed by silver sintering the bearing surface to the semiconductor.

5. The power semiconductor module according to claim 1, wherein a control terminal and a first power terminal of the semiconductor are connected to respective contact areas of the substrate, wherein the contact area of the substrate connected to the control terminal is accessible from outside through a first opening of the openings in the package, wherein a terminal contact of a second power terminal of the semiconductor is accessible from outside through a second opening of the openings in the package.

6. The power semiconductor module according to claim 5, wherein the control terminal and the second power terminal are provided on a top side of the semiconductor, and the first power terminal is provided on a bottom side of the semiconductor facing the substrate; and wherein the control terminal is connected to a respective contact area of the substrate by a bonding wire, and the contact area of the substrate connected to the control terminal by the bonding wire is accessible from outside through the first opening in the package.

7. The power semiconductor module according to claim 5, wherein the second power terminal is provided on a top side of the semiconductor, the control terminal and the first power terminal are provided on a bottom side of the semiconductor facing the substrate; and wherein the control terminal and the first power terminal are connected to respective contact areas of the substrate by a bottom side connecting layer between the semiconductor and the substrate, and the contact area of the substrate connected to the control terminal by the bottom side connecting layer is accessible from outside through the first opening in the package.

8. The power semiconductor module according to claim 1, further comprising: a base plate; and an insulating film formed on a top side of the base plate, wherein the substrate is provided on a top side of the insulating film.

9. The power semiconductor module according to claim 8, wherein the package is made of a material that is thermomechanically adapted to that of the substrate and the base plate.

10. The power semiconductor module according to claim 1, wherein the package is a molding compound molded on the substrate and the semiconductor.

11. The power semiconductor module according to claim 1, wherein a contact area of the substrate at the periphery of the substrate is accessible from the periphery of the power semiconductor module.

12. The power semiconductor module according to claim 1, wherein the openings in the package are arranged in such a way that they are offset from one another.

13. The power semiconductor module according to claim 2, wherein the terminal contact of the semiconductor that is exposed outside and accessible from outside is provided with a bearing surface thereon.

14. The power semiconductor module according to claim 2, wherein a control terminal and a first power terminal of the semiconductor are connected to respective contact areas of the substrate, wherein the contact area of the substrate connected to the control terminal is accessible from outside through a first opening of the openings in the package, wherein a terminal contact of a second power terminal of the semiconductor is accessible from outside through a second opening of the openings in the package.

15. The power semiconductor module according to claim 3, wherein a control terminal and a first power terminal of the semiconductor are connected to respective contact areas of the substrate, wherein the contact area of the substrate connected to the control terminal is accessible from outside through a first opening of the openings in the package, wherein a terminal contact of a second power terminal of the semiconductor is accessible from outside through a second opening of the openings in the package.

16. The power semiconductor module according to claim 4, wherein a control terminal and a first power terminal of the semiconductor are connected to respective contact areas of the substrate, wherein the contact area of the substrate connected to the control terminal is accessible from outside through a first opening of the openings in the package, wherein a terminal contact of a second power terminal of the semiconductor is accessible from outside through a second opening of the openings in the package.

17. The power semiconductor module according to claim 2, further comprising: a base plate; and an insulating film formed on a top side of the base plate, wherein the substrate is provided on a top side of the insulating film.

18. The power semiconductor module according to claim 3, further comprising: a base plate; and an insulating film formed on a top side of the base plate, wherein the substrate is provided on a top side of the insulating film.

19. The power semiconductor module according to claim 4, further comprising: a base plate; and an insulating film formed on a top side of the base plate, wherein the substrate is provided on a top side of the insulating film.

20. The power semiconductor module according to claim 5, further comprising: a base plate; and an insulating film formed on a top side of the base plate, wherein the substrate is provided on a top side of the insulating film.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The above and other features of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the accompanying drawings, in which:

[0037] FIG. 1 is an illustrative cross section view of a power semiconductor module according to a first exemplary embodiment of the present invention; and

[0038] FIG. 2 is an illustrative cross section view of a power semiconductor module according to a second exemplary embodiment of the present invention.

DETAILED DESCRIPTION

[0039] Exemplary embodiments of the present disclosure will be described hereinafter in detail with reference to the attached drawings, wherein the like reference numerals refer to the like elements. The present disclosure may, however, be embodied in many different forms and should not be construed as being limited to the embodiment set forth herein; rather, these embodiments are provided so that the present disclosure will be thorough and complete, and will fully convey the concept of the disclosure to those skilled in the art.

[0040] In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically shown in order to simplify the drawing.

[0041] According to a general concept of the present invention, there is provided a power semiconductor module, comprising: a substrate; a semiconductor provided on a top side of the substrate; and a package formed on the semiconductor and the substrate, wherein the package has openings at a top side thereof, through which terminal contacts of the semiconductor and the substrate are exposed outside and accessible from outside.

First Embodiment

[0042] FIG. 1 is an illustrative cross section view of a power semiconductor module according to a first exemplary embodiment of the present invention.

[0043] In an embodiment of the present invention, a power semiconductor module is disclosed. As shown in FIG. 1, the power semiconductor module mainly comprises a substrate 120, a semiconductor 110 and a package 140.

[0044] As shown in FIG. 1, the semiconductor 110 is provided on a top side of the substrate 120. The package 140 is formed on the semiconductor 110 and the substrate 120. As shown in FIG. 1, the package 140 has openings 141, 142 formed therein at a top side thereof, through which terminal contacts of the semiconductor 110 and the substrate 120 are exposed outside and accessible from outside. The terminal contacts of the semiconductor 110 and the substrate 120 that are exposed outside and accessible from outside may be pressure-contacted with a printed circuit board by, for example, pressure-contact springs.

[0045] In an exemplary embodiment of the present invention, as shown in FIG. 1, the substrate 120 is a lead frame based substrate; and a control terminal 111 (for example Gate or Base) and a first power terminal 113 of the semiconductor 110 are connected to respective contact areas of the substrate 120.

[0046] In the illustrated embodiment shown in FIG. 1, a contact area, served as a terminal contact, of the substrate 120 connected to the control terminal 111 is accessible from outside through a first opening 141 of the openings in the package 140. A terminal contact of a second power terminal 112 of the semiconductor 110 is accessible from outside through a second opening 142 of the openings in the package 140. The terminal contact of the second power terminal 112 may be pressure-contacted with a printed circuit board by, for example, pressure-contact spring (not shown).

[0047] As shown in FIG. 1, in this exemplary embodiment, the control terminal 111 and second power terminal 112 both are provided on a top side of the semiconductor 110, and the first power terminal 113 is provided on a bottom side of the semiconductor 110 facing the substrate 220. The control terminal 111 is connected to a respective contact area of the substrate 120 by a bonding wire 150, and the contact area, served as the terminal contact, of the substrate 120 connected to the control terminal 111 by the bonding wire 150 is accessible from outside through the first opening 141 in the package 140. This contact area may be pressure-contacted with a printed circuit board by, for example, pressure-contact spring (not shown).

[0048] As shown in FIG. 1, in an embodiment, the control terminal 111 and the second power terminal 112 are provided with a copper based bearing surface 130 thereon, and the bearing surface 130 is connected to the semiconductor 110 by a top side connecting layer 160 between the bearing surface 130 and the semiconductor 110. In this case, the bearing surface 130 on the second power terminal 112 is served as the terminal contact and a protection layer of the second power terminal 112 and is accessible from outside through the second opening 142 in the package 140, for example may be pressure-contacted with a printed circuit board by, for example, pressure-contact spring (not shown).

[0049] In an exemplary embodiment, as shown in FIG. 1, the top side connecting layer 160 may be a silver sintering layer formed by silver sintering the bearing surface 130 to the semiconductor 110.

[0050] In an exemplary embodiment, as shown in FIG. 1, the semiconductor 110 may be connected to the substrate 120 by a bottom side connecting layer 160 between the semiconductor 110 and the substrate 120.

[0051] In an exemplary embodiment, as shown in FIG. 1, the bottom side connecting layer 160 may be a silver sintering layer formed by silver sintering the semiconductor 110 to the substrate 120.

[0052] In an exemplary embodiment, as shown in FIG. 1, the power semiconductor module may further comprise a base plate 101 and an insulating film 102 formed on a top side of the base plate 101. As shown in FIG. 1, the substrate 120 is provided on a top side of the insulating film 102.

[0053] In an exemplary embodiment, as shown in FIG. 1, the package 140 is made of a material that is thermomechanically adapted to that of the substrate 120 and the base plate 101.

[0054] In an exemplary embodiment, as shown in FIG. 1, the package 140 may be a molding compound molded on the substrate 120 and the semiconductor 110.

[0055] In an exemplary embodiment, as shown in FIG. 1, a contact area of the substrate 120 at the periphery of the substrate 120 may be accessible from the periphery of the power semiconductor module. For example, as shown in FIG. 1, on the left-hand side of the moulding compound 140, by way of example, a further potential surface of the substrate 120 is accessible from the periphery. This is intended to illustrate a further design possibility.

[0056] In an exemplary embodiment, as shown in FIG. 1, the openings 141, 142 in the package 140 are arranged in such a way that they are offset from one another. In this way, an arrangement of the openings that does not lead to a predetermined breaking line of the power module is provided. This can be obtained in particular by a chequerboard-like offsetting of the terminal clearances in the power module, which is achieved by corresponding prior arrangement of the semiconductors. The arrangement of the openings for the semiconductor contacts preferably should not be arranged in a way, that weak lines in the housing are resulting. This would be the case, if all openings are placed on a line. The openings might be better placed such that they do not form single lines in order to avoid weakening of the housing.

Second Embodiment

[0057] FIG. 2 is an illustrative cross section view of a power semiconductor module according to a second exemplary embodiment of the present invention.

[0058] In an embodiment of the present invention, a power semiconductor module is disclosed. As shown in FIG. 2, the power semiconductor module mainly comprises a substrate 220, a semiconductor 210 and a package 240.

[0059] As shown in FIG. 2, the semiconductor 210 is provided on a top side of the substrate 220. The package 240 is formed on the semiconductor 210 and the substrate 220. As shown in FIG. 2, the package 240 has openings 241, 242 formed therein at a top side thereof, through which terminal contacts of the semiconductor 210 and the substrate 220 are exposed outside and accessible from outside. The terminal contacts of the semiconductor 210 and the substrate 220 that are exposed outside and accessible from outside may be pressure-contacted with a printed circuit board by, for example, pressure-contact springs.

[0060] In an exemplary embodiment of the present invention, as shown in FIG. 2, the substrate 220 is a lead frame based substrate; and a control terminal 211 (for example Gate or Basis) and a first power terminal 213 of the semiconductor 210 are connected to respective contact areas of the substrate 220.

[0061] In the illustrated embodiment shown in FIG. 2, a contact area, served as a terminal contact, of the substrate 220 connected to the control terminal 211 is accessible from outside through a first opening 241 of the openings in the package 240. A terminal contact of a second power terminal 212 of the semiconductor 210 is accessible from outside through a second opening 242 of the openings in the package 240. The terminal contact of the second power terminal 212 may be pressure-contacted with a printed circuit board by, for example, pressure-contact spring.

[0062] As shown in FIG. 2, in this exemplary embodiment, the second power terminal 212 is provided on a top side of the semiconductor 210, and the control terminal 211 and the first power terminal 213 are provided on a bottom side of the semiconductor 210 facing the substrate 220. The control terminal 211 and the first power terminal 213 are connected to respective contact areas of the substrate 220 by a bottom side connecting layer 260 between the semiconductor 210 and the substrate 220, and the contact area of the substrate 220 connected to the control terminal 211 by the bottom side connecting layer 260 is accessible from outside through the first opening 241 in the package 240. This contact area may be pressure-contacted with a printed circuit board by, for example, pressure-contact spring.

[0063] In an exemplary embodiment, as shown in FIG. 2, the bottom side connecting layer 260 may be a silver sintering layer formed by silver sintering the semiconductor 210 to the substrate 220.

[0064] As shown in FIG. 2, in an embodiment, the second power terminal 212 is provided with a copper based bearing surface 230 thereon, and the bearing surface 230 is connected to the semiconductor 210 by a top side connecting layer 260 between the bearing surface 230 and the semiconductor 210. In this case, the bearing surface 230 on the second power terminal 212 is served as the terminal contact and a protection layer of the second power terminal 212 and is accessible from outside through the second opening 242 in the package 240, for example may be pressure-contacted with a printed circuit board by, for example, pressure-contact spring.

[0065] In an exemplary embodiment, as shown in FIG. 2, the top side connecting layer 260 may be a silver sintering layer formed by silver sintering the bearing surface 230 to the semiconductor 210.

[0066] In an exemplary embodiment, as shown in FIG. 2, the power semiconductor module may further comprise a base plate 201 and an insulating film 202 formed on a top side of the base plate 201. As shown in FIG. 2, the substrate 220 is provided on a top side of the insulating film 202.

[0067] In an exemplary embodiment, as shown in FIG. 2, the package 240 is made of a material that is thermomechanically adapted to that of the substrate 220 and the base plate 201.

[0068] In an exemplary embodiment, as shown in FIG. 2, the package 240 may be a molding compound molded on the substrate 220 and the semiconductor 210.

[0069] In an exemplary embodiment, as shown in FIG. 2, a contact area of the substrate 220 at the periphery of the substrate 220 may be accessible from the periphery of the power semiconductor module. For example, as shown in FIG. 2, on the left-hand side of the moulding compound 240, by way of example, a further potential surface of the substrate 220 is accessible from the periphery. This is intended to illustrate a further design possibility.

[0070] In an exemplary embodiment, as shown in FIG. 2, the openings 241, 242 in the package 240 are arranged in such a way that they are offset from one another. In this way, an arrangement of the openings that does not lead to a predetermined breaking line of the power module is provided. This can be obtained in particular by a chequerboard-like offsetting of the terminal clearances in the power module, which is achieved by corresponding prior arrangement of the semiconductors. The arrangement of the openings for the semiconductor contacts preferably should not be arranged in a way, that weak lines in the housing are resulting. This would be the case, if all openings are placed on a line. The openings might be better placed such that they do not form single lines in order to avoid weakening of the housing.

[0071] In the exemplary embodiment shown in FIG. 2, it is intended to illustrate a further design possibility. The flip-chip arrangement of the power semiconductor in this configurational variant makes it possible to dispense with wire bonds, so that the housing can be very flat. In an ideal case, directly above the power semiconductor it may finish flush with the protected contact area thereof.

[0072] It should be appreciated for those skilled in this art that the above embodiments are intended to be illustrated, and not restrictive. For example, many modifications may be made to the above embodiments by those skilled in this art, and various features described in different embodiments may be freely combined with each other without conflicting in configuration or principle.

[0073] Although several exemplary embodiments have been shown and described, it would be appreciated by those skilled in the art that various changes or modifications may be made in these embodiments without departing from the principles and spirit of the disclosure, the scope of which is defined in the claims and their equivalents.

[0074] As used herein, an element recited in the singular and proceeded with the word a or an should be understood as not excluding plural of said elements or steps, unless such exclusion is explicitly stated. Furthermore, references to one embodiment of the present invention are not intended to be interpreted as excluding the existence of additional embodiments that also incorporate the recited features. Moreover, unless explicitly stated to the contrary, embodiments comprising or having an element or a plurality of elements having a particular property may include additional such elements not having that property.

[0075] While the present disclosure has been illustrated and described with respect to a particular embodiment thereof, it should be appreciated by those of ordinary skill in the art that various modifications to this disclosure may be made without departing from the spirit and scope of the present disclosure.