Optocoupler having a semiconductor diode for each voltage source and a tunnel diode formed between each two successive voltage sources

Abstract

An optocoupler having a transmitter module and a receiver module that are galvanically isolated from each other and optically coupled with one another and are integrated in a common housing. The receiver module has a voltage source that has a number N of partial voltage sources mutually connected in series and constructed as semiconductor diodes. Each of the partial voltage sources has a semiconductor diode having a p-n junction, and the partial source voltages of the individual partial voltage sources each deviate by less than 20% from one another. Between each two successive partial voltage sources, a tunnel diode is formed and the partial voltage sources and the tunnel diodes are monolithically integrated together and jointly form a first stack having a top surface and a bottom surface, and the number N of the partial voltage sources is greater than or equal to three.

Claims

1. An optocoupler comprising: a transmitter module; and a receiver module, the transmitter module and the receiver module being galvanically isolated from each other and optically coupled with one another and integrated in a common housing, the receiver module comprising a plurality of N partial voltage sources mutually series-connected and constructed as semiconductor diodes, wherein each of the partial voltage sources have a semiconductor diode having a p-n junction, a p-doped absorption layer, and an n-absorption layer, wherein the n-absorption layer is passivated by an n-doped passivation layer having a wider band gap than a band gap of the n-absorption layer, the partial source voltages of the individual partial voltage sources deviating less than 20% from each other, wherein, between each two successive partial voltage sources, a tunnel diode is formed, wherein the tunnel diode has a plurality of semiconductor layers with a wider band gap than a band gap of the p/n absorption layers and the semiconductor layers having the wider band gap in each case are formed of a material with modified stoichiometry and/or other elemental composition than the p/n absorption layers of the semiconductor diode, wherein the partial voltage sources and the tunnel diodes are monolithically integrated together and jointly form a first stack having a top surface and a bottom surface, wherein the number N of the partial voltage sources is greater than or equal to three, wherein on the first stack, light is incident on a surface of the top surface of the first stack and a size of the illuminated top surface on the stack surface essentially or at least corresponds to a size of the surface of the first stack on the top surface, wherein the first stack has a total thickness of less than 12 microns, wherein at 300 K, the first stack has a source voltage of greater than 3 volts, provided that the first stack is irradiated with light, wherein, in a light incidence direction from a top surface of the first stack towards a bottom surface of the stack, a total thickness of the p/n absorption layers of a semiconductor diode increases from the top diode toward the lowermost diode and each p-absorption layer of the semiconductor diode is passivated by a p-doped passivation layer with a greater band gap than a band gap of the p-absorption layer and wherein a voltage source near a bottom side of the stack has a circumferential shoulder-like edge.

2. The optocoupler according to claim 1, wherein the partial source voltages of the partial voltage sources of the receiver module deviate by less than 10% from one another.

3. The optocoupler according to claim 1, wherein the semiconductor diodes of the receiver module each are formed of substantially the same semiconductor material.

4. The optocoupler according to claim 1, wherein the first stack is disposed on a substrate and wherein the substrate comprises a semiconductor material.

5. The optocoupler according to claim 1, wherein the first stack has a base area smaller than 2 mm.sup.2 or smaller than 1 mm.sup.2.

6. The optocoupler according to claim 1, wherein, on the top surface of the first stack of the receiver module, a first voltage terminal is formed as a circumferential metal contact in a vicinity of an edge or as a single contact surface on the edge.

7. The optocoupler according to claim 1, wherein on a bottom surface of the first stack of the receiver module, a second voltage terminal is formed.

8. The optocoupler according to claim 7, wherein the second voltage terminal of the receiver module is formed by the substrate.

9. The optocoupler according to claim 1, wherein in the receiver module, a second stack is formed, wherein the first stack and the second stack are arranged side by side on a common carrier, and wherein the first and second stacks are connected to one another in series so that a source voltage of the first stack and a source voltage of the second stack are added together.

10. The optocoupler according to claim 1, wherein, between the p-absorption layer and the n-absorption layer of each diode of the receiver module, an intrinsic layer is formed.

11. The optocoupler according to claim 1, wherein the semiconductor material and/or the substrate of the receiver module is formed of III-V materials.

12. The optocoupler according to claim 1, wherein the substrate of the receiver module comprises germanium or gallium arsenide.

13. The optocoupler according to claim 1, wherein an evaluation circuit is integrated in the housing and the voltage source is in electrical operative connection with the evaluation circuit.

14. The optocoupler according to claim 1, wherein, below the lowermost semiconductor diode of the stack of the receiver module, a semiconductor mirror is formed.

15. The optocoupler according to claim 1, wherein the semiconductor layers of the stack of the receiver module comprise arsenide-containing and phosphide-containing layers.

16. The optocoupler according to claim 1, wherein a border of the edge is spaced apart by at least 5 microns and maximally 500 microns from the immediately adjoining lateral surface of the stack.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus, are not limitive of the present invention, and wherein:

(2) FIG. 1 illustrates an embodiment according to the invention of an optocoupler with a scalable voltage source with a stack;

(3) FIG. 2 illustrates an embodiment of an optocoupler with a scalable voltage source with multiple stacks;

(4) FIG. 3 illustrates an embodiment with a total of five diodes with different thicknesses of the absorption area'

(5) FIG. 4 illustrates a stack with a circumferential shoulder-like step;

(6) FIG. 5a illustrates a cross-sectional view of a vertical arrangement of transmitter to receiver module; and

(7) FIG. 5b illustrates a cross-sectional view of a lateral arrangement of transmitter to receiver module.

DETAILED DESCRIPTION

(8) FIG. 1 shows a schematic view of a first embodiment, comprising an optocoupler OPK with a transmitter module S with a transmitting diode SD and a receiver module EM. The receiver module EM has a scalable voltage source VQ and an evaluation unit AWE. It is understood that the notion of scalability refers to the level of the source voltage of the entire stack. By means of a mirror SP, the light L of the transmitting diode SD is directed onto the surface of a scalable voltage source VQ. It is understood that the optocoupler OPK is housed in this case, i.e., that the aforementioned components are integrated in the common housing.

(9) The voltage source VQ has a first stack ST1 having a top surface and a bottom surface with a number N equal to three diodes. The first stack ST1 has a series circuit of a first diode D1 and a first tunnel diode T1 and a second diode D2 and a second tunnel diode T2, and a third diode D3. A first voltage terminal VSUP1 is formed at the top surface of the first stack ST1, and a second voltage terminal VSUP2 is formed at the bottom surface of the first stack ST1. The present source voltage is formed of the partial voltages of the individual diodes D1 to D3. To this end, the first stack ST1 is subjected to a photon flux L from the transmitting diode SD. Provided that the transmitting diode SD emits a modulated photon flux, the source voltage VQ1 of the first stack ST1 is also modulated in the first stack ST1.

(10) The first stack ST1, comprising the diodes D1 to D3 and the tunnel diodes T1 and T2, is configured as a monolithically formed block. The evaluation unit AWE comprises an integrated circuitnot shown. The transmitter module S and the receiver module EM each have two galvanically isolated terminals.

(11) The illustration of FIG. 2 shows another embodiment of the optocoupler of FIG. 1 with an advantageous sequence of the first stack ST1 and a second stack ST2. Below, only the differences from the picture of FIG. 1 are explained. The second stack ST2 has as the first batch ST1 a series circuit of three diodes with tunnel diodes formed therebetween. Both stacks ST1 and ST2 are connected together in series so that the source voltage VQ1 of the first stack ST1 and the source voltage VQ2 of the second stack ST2 can be added together, provided that the two stacks ST1 and ST2 are subjected to the photon flux L of the transmitting diode SD. In the present case, the receiver module EM has no evaluation circuit so that the first voltage terminal VSUP1 and the second voltage terminal VSUP3 are guided directly to the outside.

(12) In one embodiment, not shown, the two stacks ST1 and ST2 comprise a different number of diodes with respect to one another, each connected in a series circuit. In another non-illustrated embodiment, at least the first stack ST1 and/or the second stack ST2 have more than three diodes connected in a series circuit. This makes it possible to scale the voltage level of the voltage source VQ. Preferably, the number N is within a range between four and eight.

(13) The illustration of FIG. 3 shows an embodiment of an advantageous sequence of semiconductor layers for the first stack ST1. Below, only the differences from the picture of FIG. 1 are explained. The first stack ST1 includes a total of five series-connected partial voltage sources constructed as diodes D1 to D5. The light L is incident on the surface OB of the first diode D1. The surface OB is illuminated nearly completely, or completely. A tunnel diode T1-T4 is formed in each case between two successive diodes D1-D5. With increasing distance of the individual diode DI to D5 from the surface OB, the thickness of the absorption area increases so that the lowermost diode D5 has the thickest absorption region. Overall, the total thickness of the first stack ST1 is less than or equal to 12 microns. A substrate SUB is formed below the lowermost diode D5.

(14) The illustration of FIG. 4 shows an embodiment of an advantageous sequence of semiconductor layers to the first stack ST1 with a circumferential shoulder-like step. Below, only the differences from the picture of FIG. 3 are explained. A first metallic terminal contact K1 is formed on the edge R of the surface OB of the first stack ST1. The first terminal contact K1 is connected with the first voltage terminal VSUP1not shown. The substrate SUB has a top surface OS, wherein the top surface OS of the substrate SUB is cohesively connected with the lowermost, i.e., the fifth diode D5. It is hereby understood that a thin nucleation layer and a buffer layer are produced epitaxially on the substrate before the fifth diode is arranged on the substrate and is cohesively bonded with the top surface OS of the substrate. The top surface OS of the substrate SUB has a larger surface area than the area at the bottom surface of the first stack ST1. This results in the formation of a circumferential step STU. The edge of the step STU is spaced apart from the immediately adjoining lateral surface of the first stack ST1 of the step by more than 5 microns and less than 500 microns, represented as the length of the reference numeral STU. At the bottom surface of the substrate SUB, a second whole-area metallic contact K2 is formed. The second terminal contact K2 is interconnected with the second voltage terminal VSUP2not shown.

(15) The illustrations of FIGS. 5a and 5b show a cross-sectional view of a vertical arrangement of transmitter module S and receiver module EM, and a cross-sectional view of a lateral arrangement of transmitter module S and receiver module EM, wherein the transmitter module S comprises a circumferential shoulder-like step with in each case the first stack ST1. Below, only the differences from the embodiments shown in the preceding figures are explained. It has been shown that in a vertical arrangement, a mirror SP is unnecessary. It is understood that based on the indicated parallel rays of light L, only the basic course of the light L is to be shown. Generally, the light of the transmitter module has a divergent light beam.

(16) The invention being thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are to be included within the scope of the following claims.